Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2007
03/06/2007US7186602 Laser annealing method
03/06/2007US7186601 Method of fabricating a semiconductor device utilizing a catalyst material solution
03/06/2007US7186600 Semiconductor device and method of manufacturing the same
03/06/2007US7186599 Narrow-body damascene tri-gate FinFET
03/06/2007US7186598 Semiconductor device and manufacturing method of the same
03/06/2007US7186597 Method of manufacturing transistors
03/06/2007US7186596 Vertical diode formation in SOI application
03/06/2007US7186592 High performance, integrated, MOS-type semiconductor device and related manufacturing process
03/06/2007US7186582 Providing a chemical vapor deposition chamber having disposed therein a substrate:introducing a gas comprised of a higher-order silane of the formula SinH2n+2 and a germanium precursor to the chamber, wherein n=3 6; and depositing a SiGe-containing film onto the substrate
03/06/2007US7186576 Stacked die module and techniques for forming a stacked die module
03/06/2007US7186570 Method of manufacturing ceramic film, method of manufacturing ferroelectric capacitor, ceramic film, ferroelectric capacitor, and semiconductor device
03/06/2007US7186380 Transistor and sensors made from molecular materials with electric dipoles
03/06/2007US7186358 electron accepting group such as naphthoquinone or 1,4-dihydro-1,4-dioxo-2,3-Naphthalenedicarbonitrile, that is bound to the polymer to induce or enhance the charge carrier mobility or electroconductivity of said polymers, used in optical, electrooptical or electronic apparatus
03/06/2007US7186355 electroconductive ladder polymer films used in detectors for a variety of analytes; miniaturization; signal sensitivity
03/06/2007US7186349 Fluid ejection device and method of fabricating the same
03/06/2007US7186302 Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
03/01/2007WO2007025259A2 MOBILITY ENHANCEMENT IN SiGe HETEROJUNCTION BIPOLAR TRANSISTORS
03/01/2007WO2007025122A2 Semiconductor micro-cavity light emitting diode
03/01/2007WO2007025050A2 Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements
03/01/2007WO2007024984A2 High performance mosfet comprising a stressed gate metal silicide layer and method of fabricating the same
03/01/2007WO2007024587A2 High current semiconductor device system having low resistance and inductance
03/01/2007WO2007024467A2 Semiconductor devices employing poly-filled trenches
03/01/2007WO2007023979A1 Mosfet and production memthod of semiconductor device
03/01/2007WO2007023950A1 Semiconductor device manufacturing method
03/01/2007WO2007023911A1 Process for producing semiconductor substrate
03/01/2007WO2007023612A1 Thin film transistor
03/01/2007WO2006138134A3 Junction leakage suppression in non-volatile memory devices by implanting phosphorous and arsenic into source and drain regions
03/01/2007WO2006135906A3 Electro-absorption modulator device and methods for fabricating the same
03/01/2007WO2006114424A3 Controllable semiconductor diode, electronic component and indirect voltage converter
03/01/2007WO2006107735A3 Method for making a semiconductor device including a superlattice with regions defining a semiconductor junction
03/01/2007WO2006104893A3 N+ polysilicon on high-k dielectric semiconductor devices
03/01/2007WO2006102292A3 Nanogaps: methods and devices containing same
03/01/2007WO2006102182A3 Process for electroless copper deposition
03/01/2007WO2006086636A3 Power mos device
03/01/2007WO2006073943A3 Method for forming a one mask hyperabrupt junction varactor using a compensated cathode contact
03/01/2007WO2006041633A3 Virtual ground memory array and method therefor
03/01/2007WO2006023044A3 Method of forming ultra shallow junctions
03/01/2007WO2006002427A3 Vertical structure semiconductor devices with improved light output
03/01/2007US20070048952 Method to manufacture ldmos transistors with improved threshold voltage control
03/01/2007US20070048947 Multi-structured Si-fin and method of manufacture
03/01/2007US20070048923 Flash memory with low tunnel barrier interpoly insulators
03/01/2007US20070048917 Process for Producing Semiconductor Integrated Circuit Device
03/01/2007US20070048909 Superjunction device with improved ruggedness
03/01/2007US20070048637 Arylamine polymer and organic thin film transistor
03/01/2007US20070048492 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
03/01/2007US20070047319 Scalable flash/NV structures and devices with extended endurance
03/01/2007US20070046876 Liquid Crystal Display Device
03/01/2007US20070046875 Liquid Crystal Display Device
03/01/2007US20070046849 Thin film transistor array substrate and repairing method of the same
03/01/2007US20070045862 Stacked microelectronic devices and methods for manufacturing microelectronic devices
03/01/2007US20070045856 Mixed metal nitride and boride barrier layers
03/01/2007US20070045835 Chip package structure
03/01/2007US20070045833 Copper bump barrier cap to reduce electrical resistance
03/01/2007US20070045782 Heat resistant ohmic electrode and method of manufacturing the same
03/01/2007US20070045780 Methods of forming blind wafer interconnects, and related structures and assemblies
03/01/2007US20070045779 Methods for forming through-wafer interconnects, intermediate structures so formed, and devices and systems having at least one solder dam structure
03/01/2007US20070045778 Wafer holder, heater unit used for wafer prober having the wafer holder, and wafer prober having the heater unit
03/01/2007US20070045777 Micronized semiconductor nanocrystal complexes and methods of making and using same
03/01/2007US20070045776 Semiconductor device
03/01/2007US20070045775 Mobility enhancement in SiGe heterojunction bipolar transistors
03/01/2007US20070045774 TaN integrated circuit (IC) capacitor
03/01/2007US20070045773 Integrated electronic device and method of making the same
03/01/2007US20070045772 Fuse structure for a semiconductor device
03/01/2007US20070045771 Reprogrammable switch using phase change material
03/01/2007US20070045770 Integrated circuit incorporating decoupling capacitor under power and ground lines
03/01/2007US20070045769 Semiconductor constructions, memory arrays, electronic systems, and methods of forming semiconductor constructions
03/01/2007US20070045768 Semiconductor device
03/01/2007US20070045767 Semiconductor devices employing poly-filled trenches
03/01/2007US20070045765 Semiconductor device having substrate-driven field-effect transistor and schottky diode and method of forming the same
03/01/2007US20070045757 Sensor
03/01/2007US20070045756 Nanoelectronic sensor with integral suspended micro-heater
03/01/2007US20070045754 Semiconductor device with recessed L-shaped spacer and method of fabricating the same
03/01/2007US20070045753 Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer
03/01/2007US20070045752 Self aligned metal gates on high-K dielectrics
03/01/2007US20070045750 Metal oxide semiconductor transistor and fabrication method thereof
03/01/2007US20070045749 Cmos well structure and method of forming the same
03/01/2007US20070045748 Semiconductor structures integrating damascene-body FinFET's and planar devices on a common substrate and methods for forming such semiconductor structures
03/01/2007US20070045747 Reduction of short-circuiting between contacts at or near a tensile-compressive boundary
03/01/2007US20070045742 Fully-depleted (FD) (SOI) MOSFET access transistor and method of fabrication
03/01/2007US20070045737 Semiconductor device and method for manufacturing the same
03/01/2007US20070045735 FinFET structure with contacts
03/01/2007US20070045730 Semiconductor device, method of manufacturing the same, and electronic device having the same
03/01/2007US20070045729 Technique for forming recessed strained drain/source regions in nmos and pmos transistors
03/01/2007US20070045728 Non-volatile semiconductor memory device having ion conductive layer and methods of fabricating and operating the same
03/01/2007US20070045727 DMOSFET and planar type MOSFET
03/01/2007US20070045726 Semiconductor device and method for manufacturing thereof
03/01/2007US20070045725 Gate-all-around integrated circuit devices
03/01/2007US20070045724 Gate pattern of semiconductor device and method for fabricating the same
03/01/2007US20070045723 Semiconductor device having an under stepped gate for preventing gate failure and method of manufacturing the same
03/01/2007US20070045722 Non-volatile memory and fabrication thereof
03/01/2007US20070045721 Ultra-thin body vertical tunneling transistor
03/01/2007US20070045720 Semiconductor device and manufacturing method therefor
03/01/2007US20070045719 Multi-purpose semiconductor device
03/01/2007US20070045718 Band engineered nano-crystal non-volatile memory device utilizing enhanced gate injection
03/01/2007US20070045717 Charge-trapping memory device and method of production
03/01/2007US20070045716 Non-volatile memory and operating method thereof
03/01/2007US20070045715 Semiconductor storage device
03/01/2007US20070045714 Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same
03/01/2007US20070045713 Semiconductor memory device
03/01/2007US20070045712 Memory cell layout and process flow
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