| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/22/2007 | US20070040162 Highly efficient III-nitride-based top emission type light emitting device having large area and high capacity and method of manufacturing the same |
| 02/22/2007 | US20070040161 Light-emitting element and light-emitting device |
| 02/22/2007 | US20070040160 Memory array for increased bit density and method of forming the same |
| 02/22/2007 | US20070040159 Manufacturing method and structure for improving the characteristics of phase change memory |
| 02/22/2007 | US20070039923 Method for preventing charge-up in plasma process and semiconductor wafer manufactured using same |
| 02/22/2007 | DE112005001029T5 Halbleiterbauelement auf der Grundlage Si-Ge mit stark verspannter Beschichtung für eine verbesserte Kanalladungsträgerbeweglichkeit Semiconductor device based on Si-Ge with highly strained coating for improved channel carrier mobility |
| 02/22/2007 | DE112005000394T5 Halbleiterbauelement mit Mehrgatestruktur und Verfahren zu seiner Herstellung A semiconductor device comprising multi-gate structure and process for its preparation |
| 02/22/2007 | DE10316429B4 TAB-Folienband für eine Halbleiterpackung TAB film tape for a semiconductor package |
| 02/22/2007 | DE102005039365A1 Gate-gesteuertes Fin-Widerstandselement zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis Gate controlled fin resistance element for use as an ESD protection element in an electric circuit and device for protection against electrostatic discharges in an electrical circuit |
| 02/22/2007 | DE102005039331A1 Semiconductor component e.g. power transistor, has drift zone, and drift control zone made of semiconductor material and arranged adjacent to drift zone in body, where accumulation dielectric is arranged between zones |
| 02/22/2007 | DE102005038441A1 Field-effect semiconductor component, has bipolar transistor structure in transistor body with weakly and strongly doped zones |
| 02/22/2007 | DE102005018347B4 Flash-Speicherzelle, Flash-Speichervorrichtung und Herstellungsverfahren hierfür Flash memory cell flash memory device and manufacturing method thereof |
| 02/22/2007 | DE102005012217B4 Lateraler MISFET und Verfahren zur Herstellung desselben Lateral MISFET and method of manufacturing the same |
| 02/22/2007 | CA2615287A1 Energy active composite yarn, methods for making the same, and articles incorporating the same |
| 02/21/2007 | EP1755169A1 Semiconductor device |
| 02/21/2007 | EP1755168A2 Deep N diffusion for trench IGBT |
| 02/21/2007 | EP1755167A2 System & device for time resolved spectroscopy |
| 02/21/2007 | EP1755166A2 Solid-state imaging device |
| 02/21/2007 | EP1754263A2 Wide bandgap field effect transistors with source connected field plates |
| 02/21/2007 | EP1754262A2 Method of fabricating a tunneling nanotube field effect transistor |
| 02/21/2007 | EP1754261A1 Planar dual gate semiconductor device |
| 02/21/2007 | EP1754260A1 Electric device with vertical component |
| 02/21/2007 | EP1754259A2 Direct cooling of leds |
| 02/21/2007 | EP1754253A2 A method of base formation in a bicmos process |
| 02/21/2007 | EP1754250A2 Semiconductor device and method for manufacture |
| 02/21/2007 | EP1753693A1 Tap unit for a beverage dispenser |
| 02/21/2007 | EP1226606B1 Spacer process to eliminate isolation trench parasitic corner devices in transistors |
| 02/21/2007 | EP1186023A4 A super-self-aligned trench-gate dmos with reduced on-resistance |
| 02/21/2007 | CN2870738Y Lattice electrode for inspecting biological impedance |
| 02/21/2007 | CN1918712A Integrated iii-nitride power devices |
| 02/21/2007 | CN1918710A Small-surfaced active semiconductor component |
| 02/21/2007 | CN1918708A 半导体装置 Semiconductor device |
| 02/21/2007 | CN1918701A Thin film transistor and manufacturing method thereof, display apparatus, method for modifying oxide film, method for forming oxide film, semiconductor device, method for manufacturing semiconductor d |
| 02/21/2007 | CN1918700A Method of making a semiconductor device using treated photoresist |
| 02/21/2007 | CN1918672A Thin-film transistor and thin-film transistor substrate and production methods for them and liquid crystal display unit using these and related device and method, and, sputtering target and transparen |
| 02/21/2007 | CN1918663A Nonvolatile memory |
| 02/21/2007 | CN1917235A Lead contact structure for emr elements |
| 02/21/2007 | CN1917234A Low-k spacer structure for flash memory |
| 02/21/2007 | CN1917233A High density trench mosfet with low gate resistance and reduced source contact space |
| 02/21/2007 | CN1917232A Semiconductor device and method for fabricating the same |
| 02/21/2007 | CN1917231A Ohmic electrode, method of manufacturing ohmic electrode, field effect transistor, method of manufacturing field effect transistor, and semiconductor device |
| 02/21/2007 | CN1917220A Method of manufacturing a semiconductor device |
| 02/21/2007 | CN1917219A Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices |
| 02/21/2007 | CN1917218A Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices |
| 02/21/2007 | CN1917215A Operation method for memory in P type channel |
| 02/21/2007 | CN1917186A Method of manufacturing a non-volatile memory device |
| 02/21/2007 | CN1917184A Nonvolatile memory unit, manufacturing method, and opertion method |
| 02/21/2007 | CN1917182A Nonvolatile memory unit, manufacturing method, and opertion method |
| 02/21/2007 | CN1917180A Nonvolatile memory and manufacturing method |
| 02/21/2007 | CN1917178A Nonvolatile memory unit, manufacturing method, and opertion method |
| 02/21/2007 | CN1917177A Frash memory in separate grids, and manufacturing method |
| 02/21/2007 | CN1917176A Nonvolatile memory, and manufacturing method |
| 02/21/2007 | CN1917155A Thin film transistor substrate and fabrication thereof |
| 02/21/2007 | CN1917154A Mis semiconductor device production method |
| 02/21/2007 | CN1917150A Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier |
| 02/21/2007 | CN1301557C SRAM unit with multi-grid transistor and mfg method thereof |
| 02/21/2007 | CN1301549C Method for mfg. semiconductor IC device |
| 02/21/2007 | CN1301548C Semiconductor structure for avoiding polycrystalline silicon stringer formation in semiconductor production |
| 02/21/2007 | CN1301538C Thin-film transistor structure and producing method thereof |
| 02/21/2007 | CN1301426C Liquid-crystal displaying panel with narrow frame design and producing method thereof |
| 02/20/2007 | US7180929 Wafer-level test structure for edge-emitting semiconductor lasers |
| 02/20/2007 | US7180796 Boosted voltage generating circuit and semiconductor memory device having the same |
| 02/20/2007 | US7180789 Semiconductor memory device with MOS transistors, each having a floating gate and a control gate, and memory card including the same |
| 02/20/2007 | US7180788 Nonvolatile semiconductor memory device |
| 02/20/2007 | US7180774 Semiconductor integrated circuit device including first, second and third gates |
| 02/20/2007 | US7180645 Quantum-state-generating apparatus, Bell measurement apparatus, quantum gate apparatus, and method for evaluating fidelity of quantum gate |
| 02/20/2007 | US7180559 Array substrate having color filter on thin film transistor structure for LCD device and method of fabricating the same |
| 02/20/2007 | US7180492 Scan driving circuit with single-type transistors |
| 02/20/2007 | US7180373 High frequency power amplifier module and semiconductor integrated circuit device |
| 02/20/2007 | US7180362 Semiconductor device with pump circuit |
| 02/20/2007 | US7180281 Electrical component and method of manufacturing the same |
| 02/20/2007 | US7180245 Light emitting device and element substrate |
| 02/20/2007 | US7180237 Active matrix substrate, free of a spacer layer in a pixel region |
| 02/20/2007 | US7180236 Flat panel display and fabrication method thereof |
| 02/20/2007 | US7180235 Light-emitting device substrate with light control layer and light-emitting device using the same |
| 02/20/2007 | US7180198 Method of fabricating polycrystalline silicon and switching device using polycrystalline silicon |
| 02/20/2007 | US7180197 Semiconductor device containing stacked semiconductor chips and manufacturing method thereof |
| 02/20/2007 | US7180194 Semiconductor device with multi-staged cut side surfaces |
| 02/20/2007 | US7180192 Semiconductor device |
| 02/20/2007 | US7180191 Semiconductor device and method of manufacturing a semiconductor device |
| 02/20/2007 | US7180186 Ball grid array package |
| 02/20/2007 | US7180180 Stacked device underfill and a method of fabrication |
| 02/20/2007 | US7180174 Nanotube modified solder thermal intermediate structure, systems, and methods |
| 02/20/2007 | US7180160 MRAM storage device |
| 02/20/2007 | US7180159 Bipolar transistor having base over buried insulating and polycrystalline regions |
| 02/20/2007 | US7180157 Bipolar transistor with a very narrow emitter feature |
| 02/20/2007 | US7180156 Thin-film devices and method for fabricating the same on same substrate |
| 02/20/2007 | US7180155 Method for manufacturing thin-film multilayer electronic component and thin-film multilayer electronic component |
| 02/20/2007 | US7180154 Integrated circuit devices having corrosion resistant fuse regions and methods of fabricating the same |
| 02/20/2007 | US7180153 Capture of residual refractory metal within semiconductor device |
| 02/20/2007 | US7180149 Semiconductor package with through-hole |
| 02/20/2007 | US7180148 Optical system with a high germanium concentration silicon germanium alloy including a graded buffer layer |
| 02/20/2007 | US7180147 Microelectronic structure with a high germanium concentration silicon germanium alloy including a graded buffer layer |
| 02/20/2007 | US7180145 Micro-electro-mechanical system (MEMS) variable capacitor apparatuses, systems and related methods |
| 02/20/2007 | US7180143 Semiconductor device having a gate insulating layer being mainly made of silicon oxynitride (SiON) having a compression strain state as its strain state |
| 02/20/2007 | US7180142 Semiconductor device |
| 02/20/2007 | US7180141 Ferroelectric capacitor with parallel resistance for ferroelectric memory |
| 02/20/2007 | US7180140 PMOS device with drain junction breakdown point located for reduced drain breakdown voltage walk-in and method for designing and manufacturing such device |
| 02/20/2007 | US7180138 SOI structure having a SiGe layer interposed between the silicon and the insulator |
| 02/20/2007 | US7180137 Semiconductor device |