Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2007
03/14/2007EP1763083A2 Semiconductor device
03/14/2007EP1763073A2 Strained Semiconductor Device and Method of Making the Same
03/14/2007EP1762823A2 Combined sensor and its fabrication method
03/14/2007EP1761956A2 High frequency transistor layout for low source drain capacitance
03/14/2007EP1761955A2 Layered composite film incorporating quantum dots as programmable dopants
03/14/2007EP1761953A1 Trench mosfet with recessed clamping diode
03/14/2007EP1761951A2 Lead solder indicator and method
03/14/2007EP1761948A1 Methods for forming semiconductor wires and resulting devices
03/14/2007EP1644968A4 Method of forming freestanding semiconductor layer
03/14/2007EP1636615A4 Embedded waveguide detectors
03/14/2007EP1433196B1 Apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
03/14/2007EP1344245B1 Method for producing a solid body comprising a microstructure
03/14/2007EP1181720B1 Methods and apparatus for fabricating a multiple modular assembly
03/14/2007EP1145322B1 Imager with reduced fet photoresponse and high integrity contact via
03/14/2007CN2879425Y High-voltage element
03/14/2007CN2879424Y High-frequency thyristor
03/14/2007CN1930692A Semiconductor device having channel comprising a mixture of binary oxides
03/14/2007CN1930691A Semiconductor device having channel fabricated from multicomponent oxide
03/14/2007CN1930690A Tapered unit cell metal-oxide-semiconductor high-voltage device structure
03/14/2007CN1930689A Trench-gate transistors and their manufacture
03/14/2007CN1930688A Trench field effect transistor and method of making it
03/14/2007CN1930687A 高k介电膜 High-k dielectric film
03/14/2007CN1930685A Method of making a semiconductor device, and semiconductor device made thereby
03/14/2007CN1930678A 半导体器件 Semiconductor devices
03/14/2007CN1930671A Tri-gate transistors and methods to fabricate same
03/14/2007CN1930668A Method of modifying insulating film
03/14/2007CN1930663A Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
03/14/2007CN1930333A Inorganic nanowires
03/14/2007CN1929950A Method of semiconductor device assembly including fatigue-resistant ternary solder alloy
03/14/2007CN1929927A Thin film of condensed polycyclc aromatic compound, and method for preparing thin film of condensed polycyclc aromatic compound
03/14/2007CN1929152A Semiconductor device
03/14/2007CN1929151A Thin film transistor, semiconductor device, display, crystallization method, and method of manufacturing thin film transistor
03/14/2007CN1929150A High-voltage field-effect transistor and method of making a high-voltage field-effect transistor
03/14/2007CN1929149A Source contact and metal scheme for high density trench MOSFET
03/14/2007CN1929148A Bipolar junction transistor and method for manufacturing same
03/14/2007CN1929142A Canal type capacitor and method for manufacturing same
03/14/2007CN1929140A Semiconductor device
03/14/2007CN1929115A Semiconductor memory device and method for manufacturing the same
03/14/2007CN1929100A Method for manufacturing thin film transistor, thin film transistor and picture element structure
03/14/2007CN1929086A Method for manufacturing detecting magnetic field/pressure MOSFET on silicon SOI substrate
03/14/2007CN1928681A Thin-film transistor array substrate, its electric static discharge protector and method for making same
03/14/2007CN1928677A Transflective liquid crystal display device and method of fabricating the same
03/14/2007CN1305122C Method for fabricating a power semiconductor device having a floating island voltage sustaining layer
03/14/2007CN1305121C Schottky diode with high field breakdown and low reverse leakage current and manufacturing method
03/14/2007CN1305117C Selective metal oxide removal
03/14/2007CN1305109C Metal element, semiconductor device, electronic device and electronic equipment and its manufacturing method
03/14/2007CN1304886C Thin film semiconductor device, electrooptical device, its mfg. method and electronic device
03/14/2007CN1304826C Method for improving excitatory performance of micromechanical resonance pressure sensor with single beam
03/13/2007US7190623 Non-volatile memory cell and method of operating the same
03/13/2007US7190512 Optical properties restoration apparatus, the restoration method, and an optical system used in the apparatus
03/13/2007US7190422 Electro-optical device and electronic apparatus
03/13/2007US7190420 Display device
03/13/2007US7190419 Liquid crystal display device and method of fabricating the same
03/13/2007US7190400 Charge multiplier with logarithmic dynamic range compression implemented in charge domain
03/13/2007US7190082 Low stress flip-chip package for low-K silicon technology
03/13/2007US7190079 Selective capping of copper wiring
03/13/2007US7190077 Semiconductor structure integrated under a pad
03/13/2007US7190076 Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same
03/13/2007US7190074 Reconstructed semiconductor wafers including alignment droplets contacting alignment vias
03/13/2007US7190071 Semiconductor package and method for fabricating the same
03/13/2007US7190065 Circuit substrate, semiconductor module and method of manufacturing circuit substrate
03/13/2007US7190050 Integrated circuit on corrugated substrate
03/13/2007US7190049 Coupling the self-assembly of copolymers, in thin films with subsequent chemical modification to remove one component of the copolymer; magnetic storage media, magnetoresistance devices
03/13/2007US7190047 Transistors and methods for making the same
03/13/2007US7190046 Bipolar transistor having reduced collector-base capacitance
03/13/2007US7190045 Semiconductor device and method for fabricating the same
03/13/2007US7190044 Fuse structure for a semiconductor device
03/13/2007US7190043 Techniques to create low K ILD for beol
03/13/2007US7190042 Self-aligned STI for narrow trenches
03/13/2007US7190041 Well for CMOS imager
03/13/2007US7190040 Semiconductor device and method of manufacturing same
03/13/2007US7190038 Micromechanical sensors and methods of manufacturing same
03/13/2007US7190037 Integrated transistor devices
03/13/2007US7190036 Transistor mobility improvement by adjusting stress in shallow trench isolation
03/13/2007US7190035 Semiconductor device having elevated source/drain on source region and drain region
03/13/2007US7190034 Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage
03/13/2007US7190033 CMOS device and method of manufacture
03/13/2007US7190032 Insulated gate transistor
03/13/2007US7190031 Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
03/13/2007US7190028 Semiconductor-on-insulator constructions
03/13/2007US7190027 Semiconductor device having high withstand capacity and method for designing the same
03/13/2007US7190026 Integrated circuit employable with a power converter
03/13/2007US7190025 Array of pull-up transistors for high voltage output circuit
03/13/2007US7190024 Method of manufacturing a thin dielectric layer using a heat treatment and a semiconductor device formed using the method
03/13/2007US7190023 Semiconductor integrated circuit having discrete trap type memory cells
03/13/2007US7190022 One transistor flash memory cell
03/13/2007US7190021 Non-volatile memory device having improved programming and erasing characteristics and method of fabricating the same
03/13/2007US7190020 Non-planar flash memory having shielding between floating gates
03/13/2007US7190019 Integrated circuits with openings that allow electrical contact to conductive features having self-aligned edges
03/13/2007US7190018 Bi-directional read/program non-volatile floating gate memory cell with independent controllable control gates, and array thereof, and method of formation
03/13/2007US7190017 Semiconductor device and method of manufacturing the same
03/13/2007US7190016 Capacitor structure
03/13/2007US7190014 Vertically-stacked plate interdigital capacitor structure
03/13/2007US7190013 ISFET using PbTiO3 as sensing film
03/13/2007US7190011 Semiconductor device and method for manufacturing same
03/13/2007US7190010 Semiconductor device
03/13/2007US7190009 Semiconductor device
03/13/2007US7190008 Electro-optic displays, and components for use therein
03/13/2007US7190007 Isolated fully depleted silicon-on-insulator regions by selective etch
03/13/2007US7190006 Symmetrical planar diac