Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2007
04/03/2007US7199428 Master chip, semiconductor memory, and method for manufacturing semiconductor memory
04/03/2007US7199427 DMOS device with a programmable threshold voltage
04/03/2007US7199426 Nonvolatile semiconductor memory device and method for fabricating the same
04/03/2007US7199425 Non-volatile memory cells
04/03/2007US7199424 Scalable flash EEPROM memory cell with notched floating gate and graded source region
04/03/2007US7199423 Non-volatile memory technology compatible with 1T-RAM process
04/03/2007US7199422 Contactless uniform-tunneling separate P-well (CUSP) non-volatile memory array architecture, fabrication and operation
04/03/2007US7199421 Sonos device and methods of manufacturing the same
04/03/2007US7199420 Semiconductor device
04/03/2007US7199418 Diverse band gap energy level semiconductor device
04/03/2007US7199417 Merged MOS-bipolar capacitor memory cell
04/03/2007US7199415 Conductive container structures having a dielectric cap
04/03/2007US7199414 Stress-reduced layer system for use in storage capacitors
04/03/2007US7199413 Junction-isolated depletion mode ferroelectric memory devices and systems
04/03/2007US7199409 Device for subtracting or adding charge in a charge-coupled device
04/03/2007US7199408 Semiconductor multilayer structure, semiconductor device and HEMT device
04/03/2007US7199406 Method for manufacturing transistor and image display device using the same
04/03/2007US7199404 Semiconductor substrate and semiconductor device using the same
04/03/2007US7199403 Semiconductor arrangement having a MOSFET structure and a zener device
04/03/2007US7199402 Semiconductor devices
04/03/2007US7199401 Light-emitting semiconductor device
04/03/2007US7199399 Thin film transistor, thin film transistor substrate, and methods for manufacturing the same
04/03/2007US7199398 Nitride semiconductor light emitting device having electrode electrically separated into at least two regions
04/03/2007US7199397 AMOLED circuit layout
04/03/2007US7199395 Photovoltaic cell and method of fabricating the same
04/03/2007US7199394 Polymer memory device with variable period of retention time
04/03/2007US7199393 Photolithographic process to form a pattern, using an inorganic nanocrystals surface-coordinated with a compound containing a photosensitive carbon to carbon double bond functional group; photomasking; simple method; organic-inorganic hybrid electroluminescent devices
04/03/2007US7199391 Device with quantum dot layer spaced from delta doped layer
04/03/2007US7199390 Window interface layer of a light-emitting diode
04/03/2007US7199307 Structure and method for embedding capacitors in z-connected multi-chip modules
04/03/2007US7199063 Process for passivating polysilicon and process for fabricating polysilicon thin film transistor
04/03/2007US7199061 Pecvd silicon oxide thin film deposition
04/03/2007US7199055 Magnetic memory cell junction and method for forming a magnetic memory cell junction
04/03/2007US7199051 Method for fabricating semiconductor device capable of preventing damages to conductive structure
04/03/2007US7199048 Method for preventing metalorganic precursor penetration into porous dielectrics
04/03/2007US7199046 Structure comprising tunable anti-reflective coating and method of forming thereof
04/03/2007US7199035 Interconnect junction providing reduced current crowding and method of manufacturing same
04/03/2007US7199033 Pattern forming method, device, method of manufacture thereof, electro-optical apparatus, and electronic apparatus
04/03/2007US7199031 Semiconductor system having a pn transition and method for manufacturing a semiconductor system
04/03/2007US7199030 Method of manufacturing semiconductor device
04/03/2007US7199028 Method for manufacturing semiconductor device
04/03/2007US7199026 Semiconductor device, cutting equipment for cutting semiconductor device, and method for cutting the same
04/03/2007US7199024 Method of manufacturing a semiconductor device
04/03/2007US7199023 Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed
04/03/2007US7199022 Manufacturing method of semiconductor device
04/03/2007US7199015 Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon
04/03/2007US7199014 Field effect transistor and method of manufacturing the same
04/03/2007US7199011 Method to reduce transistor gate to source/drain overlap capacitance by incorporation of carbon
04/03/2007US7199010 Method of maufacturing a trench-gate semiconductor device
04/03/2007US7199008 Microelectronic device having floating gate protective layer and method of manufacture therefor
04/03/2007US7199007 Non-volatile memory device having a nitride barrier to reduce the fast erase effect
04/03/2007US7199006 Planarization method of manufacturing a superjunction device
04/03/2007US7199001 Method of forming MIM capacitor electrodes
04/03/2007US7199000 Method for manufacturing semiconductor device
04/03/2007US7198999 Flash memory device having a graded composition, high dielectric constant gate insulator
04/03/2007US7198998 Method of manufacturing bipolar-complementary metal oxide semiconductor
04/03/2007US7198997 Method for producing semiconductor substrate, method for producing field effect transistor, semiconductor substrate, and field effect transistor
04/03/2007US7198995 Strained finFETs and method of manufacture
04/03/2007US7198994 Semiconductor device and manufacturing method of semiconductor device
04/03/2007US7198992 Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and resists as masks
04/03/2007US7198990 Method for making a FET channel
04/03/2007US7198979 Method for manufacturing a stack arrangement of a memory module
04/03/2007US7198976 Solid-state imaging device and method for manufacturing the same
04/03/2007US7198974 Micro-mechanically strained semiconductor film
04/03/2007US7198970 Technique for perfecting the active regions of wide bandgap semiconductor nitride devices
04/03/2007US7198968 Method of fabricating thin film transistor array substrate
04/03/2007US7198885 inkjet technique with lithographic technique, providing extremely high resolution, is used to fabricate transistor source and drain electrodes, parts of interconnections and circuit electrodes, enabling highly conductive materials to be used
04/03/2007US7197939 Pressure sensor
04/03/2007CA2424082C Surface modified semiconductive and metallic nanoparticles having enhanced dispersibility in aqueous media
03/2007
03/29/2007WO2007035862A2 Semiconductor package
03/29/2007WO2007035786A2 Magnetic devices having stabilized free ferromagnetic layer or multilayered free ferromagnetic layer
03/29/2007WO2007035660A1 Method to form a device on a soi substrate
03/29/2007WO2007035608A2 Termination structure
03/29/2007WO2007035416A2 Integrated circuit with gate self-protection
03/29/2007WO2007034841A1 Organic semiconductor material and organic field effect transistor
03/29/2007WO2007034761A1 Semiconductor device and method for fabrication thereof
03/29/2007WO2007034718A1 Semiconductor device
03/29/2007WO2007034596A1 Active matrix substrate, display, television set, method for producing active matrix substrate, and method for manufacturing display
03/29/2007WO2007034553A1 Semiconductor device and its fabrication method
03/29/2007WO2007034547A1 Trench gate power mosfet
03/29/2007WO2007033692A1 High-voltage transistor and method for its manufacture
03/29/2007WO2007017689A3 Nanorod thin-film transistors
03/29/2007WO2007013009A3 Thin film circuits having transistors comprising a light shield
03/29/2007WO2007006001A9 Iii-nitride enhancement mode devices
03/29/2007WO2007000683A3 Bipolar transistor and method op manufacturing the same
03/29/2007WO2006110204A3 Thick semi-insulating or insulating epitaxial gallium nitride layers and devices incorporating same
03/29/2007WO2006109221A3 Lateral bipolar transistor
03/29/2007WO2005079308A3 One dimensional nanostructures for vertical heterointegration on a silicon platform and method for making same
03/29/2007WO2005074449A3 Structure comprising amorphous carbon film and method of forming thereof
03/29/2007US20070074317 Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements
03/29/2007US20070073807 Latch-up free vertical TVS diode array structure using trench isolation
03/29/2007US20070072478 Semiconductor device
03/29/2007US20070072439 Semiconductor device and manufacturing method thereof
03/29/2007US20070072438 Method of forming an oxide layer
03/29/2007US20070072425 Substrate and method for producing same
03/29/2007US20070072405 Semiconductor device and method for manufacturing the same
03/29/2007US20070072383 Phosphorus Activated NMOS Using SiC Process
03/29/2007US20070072381 Method for fabricating a semiconductor device including the use of a compound containing silicon and nitrogen to form an insulation film of SiN, SiCN or SiOCN
03/29/2007US20070072376 Strained-induced mobility enhancement nano-device structure and integrated process architecture for CMOS technologies
03/29/2007US20070072374 Semiconductor device