Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2007
03/15/2007WO2006085267A3 Semiconductor device with trench field plate
03/15/2007WO2006041632A3 A virtual ground memory array and method therefor
03/15/2007US20070059947 Method of manufacturing carbon nanotube semiconductor device
03/15/2007US20070059944 Plasma processing method and computer storage medium
03/15/2007US20070059932 Methods of forming films in semiconductor devices with solid state reactants
03/15/2007US20070059906 Semiconductor device having a spacer layer doped with slower diffusing atoms than substrate
03/15/2007US20070059886 System and method for automatically calculating parameters of an mosfet
03/15/2007US20070059883 Method of fabricating trap nonvolatile memory device
03/15/2007US20070059881 Atomic layer deposited zirconium aluminum oxide
03/15/2007US20070059875 Semiconductor device and method of manufacturing the same, and semiconductor substrate and method of manufacturing the same
03/15/2007US20070059873 Fabrication of single or multiple gate field plates
03/15/2007US20070059853 Method for Manufacturing Semiconductor Device
03/15/2007US20070058443 Method for operating an electrical writable and erasable memory cell and a memory device for electrical memories
03/15/2007US20070058433 Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells
03/15/2007US20070058325 Gapped-plate capacitor
03/15/2007US20070058121 Liquid crystal display device and method of manufacturing the same
03/15/2007US20070058102 Electro-optical device and electronic apparatus
03/15/2007US20070057873 Pixel circuit, display unit, and pixel circuit drive method
03/15/2007US20070057741 Method and apparatus for effecting high-frequency amplification or oscillation
03/15/2007US20070057624 Patterns of electrically conducting polymers and their application as electrodes or electrical contacts
03/15/2007US20070057376 Semiconductor device and method for fabricating the same
03/15/2007US20070057348 Microstructure and manufacturing method thereof
03/15/2007US20070057346 Semiconductor device having ESD protection with fuse
03/15/2007US20070057345 Resistance dividing circuit and manufacturing method thereof
03/15/2007US20070057343 Integration of a mim capacitor over a metal gate or silicide with high-k dielectric materials
03/15/2007US20070057342 Semiconductor fuse box and method for fabricating the same
03/15/2007US20070057340 Semiconductor device and method of fabricating thereof
03/15/2007US20070057336 Microelectromechanical (MEM) viscosity sensor and method
03/15/2007US20070057335 Semiconductor device
03/15/2007US20070057334 Mosfet with high angle sidewall gate and contacts for reduced miller capacitance
03/15/2007US20070057333 MOS transistor and method of manufacturing the same
03/15/2007US20070057332 Thin film transistor and fabrication method thereof
03/15/2007US20070057331 Semiconductor device and method for fabricating the same
03/15/2007US20070057330 Semiconductor device and method of fabricating semiconductor device
03/15/2007US20070057329 Semiconductor device having a p-MOS transistor with source-drain extension counter-doping
03/15/2007US20070057328 Semiconductor device and its manufacture
03/15/2007US20070057324 Strained semiconductor device and method of making the same
03/15/2007US20070057322 Substrate carrier having reduced height
03/15/2007US20070057321 Semiconductor device
03/15/2007US20070057320 Semiconductor Devices with Stressed Channel Regions and methods Forming the Same
03/15/2007US20070057319 Flash memory device and a method of manufacturing the same
03/15/2007US20070057318 Semiconductor memory device and method of production
03/15/2007US20070057317 Non-volatile memory cell and fabricating method thereof and method of fabricating non-volatile memory
03/15/2007US20070057316 Semiconductor device and manufacturing method thereof
03/15/2007US20070057315 Nonvolatile semiconductor memory device having element isolating region of trench type
03/15/2007US20070057314 Integrated circuit device and electronic instrument
03/15/2007US20070057313 Multi-Bit Nonvolatile Memory Devices Including Nano-Crystals and Trench, and Methods for Fabricating the Same
03/15/2007US20070057311 Conventionally printable non-volatile passive memory element and method of making thereof
03/15/2007US20070057310 Nonvolatile semiconductor memory device having element isolating region of trench type
03/15/2007US20070057309 Nonvolatile semiconductor memory devices and methods of forming the same
03/15/2007US20070057308 Electrode structure and method of manufacturing the same, phase-change memory device having the electrode structure and method of manufacturing the same
03/15/2007US20070057307 Embedded flash memory devices on SOI substrates and methods of manufacture thereof
03/15/2007US20070057306 Semiconductor storage device and method for manufacturing the same
03/15/2007US20070057305 MIM capacitor integrated into the damascene structure and method of making thereof
03/15/2007US20070057304 Capacitor structure, memory cell and method for forming a capacitor structure
03/15/2007US20070057303 Method For Forming Trench Capacitor and Memory Cell
03/15/2007US20070057302 Trench metal-insulator-metal (mim) capacitors integrated with middle-of-line metal contacts, and method of fabricating same
03/15/2007US20070057301 Method of manufacturing a transistor, a method of manufacturing a memory device and transistor
03/15/2007US20070057300 Semiconductor device
03/15/2007US20070057293 Ultra high voltage mos transistor device
03/15/2007US20070057292 SONOS type non-volatile semiconductor devices and methods of forming the same
03/15/2007US20070057291 Reference voltage generation circuit, and constant voltage circuit using the reference voltage generation circuit
03/15/2007US20070057290 Field effect transistor
03/15/2007US20070057289 Power semiconductor device and method therefor
03/15/2007US20070057288 Methods of Fabricating Semiconductor Devices with Enlarged Recessed Gate Electrodes
03/15/2007US20070057285 Wurtzite thin film, laminate containing wurtzite crystalline layer and their manufacturing methods
03/15/2007US20070057283 Fed control circuit
03/15/2007US20070057282 Semiconductor light-emitting device
03/15/2007US20070057281 Method of Fabricating an Integrated Circuit with Gate Self-Protection, and an Integrated Circuit with Gate Self-Protection
03/15/2007US20070057280 Semiconductor device
03/15/2007US20070057279 Light-emitting element having PNPN-structure and light-emitting element array
03/15/2007US20070057278 Magnetic switching element and signal processing device using the same
03/15/2007US20070057277 Tunneling gap diodes
03/15/2007US20070057260 Transflective liquid crystal display device and method of fabricating the same
03/15/2007US20070057259 Three-terminal switch array, three-terminal switch array device, combined semiconductor device, and image form appartus
03/15/2007US20070057258 Display device and method for manufacturing the same
03/15/2007US20070057257 Liquid crystal display
03/15/2007US20070057256 Element forming substrate, active matrix substrate, and method of manufacturing the same
03/15/2007US20070057252 Organic thin film transistor with contact hole and method for fabricating the same
03/15/2007US20070057251 Pixel structure
03/15/2007US20070057250 Light-emitting device, organic compound and display
03/15/2007US20070057245 Artificial band gap
03/15/2007DE19814115B4 Halbleiteranordnung und Verfahren zu deren Herstellung A semiconductor device and process for their preparation
03/15/2007DE19807012B4 Arrayförmige nichtflüchtige Speichereinrichtung und Verfahren zu ihrer Herstellung Array-shaped non-volatile storage device and process for their preparation
03/15/2007DE10393858T5 Integrierte Schaltkreisstruktur mit verbesserter LDMOS-Gestaltung Integrated circuit structure having an improved design of LDMOS
03/15/2007DE10339487B4 Verfahren zum Aufbringen eines Halbleiterchips auf einen Träger A method of applying a semiconductor chip to a carrier
03/15/2007DE10239862B4 Trench-Transistorzelle, Transistoranordnung und Verfahren zur Herstellung einer Transistoranordnung Trench-transistor cell transistor arrangement and method of manufacturing a transistor device
03/15/2007DE102006031050A1 Zenerdiode Zener diode
03/15/2007DE102005063094A1 Metallleitung für eine Halbleiter-Vorrichtung und Herstellung derselben Metal line for a semiconductor device and manufacturing the same
03/15/2007DE102005043270A1 Device and production method for temperature monitoring of planar FET has ohmic measuring resistance and temperature sensor separated from substrate surface by an isolation layer
03/15/2007DE102005041358A1 Field plate trench transistor and production process has isolated field electrode structure connected to a voltage divider to set its potential between those of source and drain or gate and drain
03/15/2007DE102005041321A1 Trench semiconductor device has electrically isolated field electrode units in trench with different strength electrical coupling between adjacent pairs
03/15/2007DE102005039804A1 Lateral semiconductor component with drift path and potential distribution structure, used for potential measurements, includes drift path with potential distribution structure
03/15/2007DE102005037573A1 Thyristor mit Freiwerdeschutz in Form eines Thyristorsystems und Verfahren zur Herstellung des Thyristorsystems Thyristor with free Become protection in the form of a Thyristorsystems and method for producing the Thyristorsystems
03/15/2007DE10050044B4 Verfahren zur Herstellung eines Wolframpolycidgates mit einer durch einen schnellen thermischen Prozess erzeugten Nitridsperrschicht A method for producing a Wolframpolycidgates with a generated by a rapid thermal process Nitridsperrschicht
03/15/2007CA2621500A1 Carbon nanotube resonators
03/15/2007CA2589432A1 Method, system, and apparatus for gating configurations and improved contacts in nanowire-based electronic devices
03/14/2007EP1763139A1 Integrated circuit that emits light, optical head that incorporates the integrated circuit, and image forming apparatus that uses the optical head
03/14/2007EP1763085A2 Thin Film transistor having a channel surrounding a crystallisation seed point
03/14/2007EP1763084A2 Field-effect transistor and method for fabricating the same