Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2007
03/29/2007US20070069214 Liquid crystal display and method of driving the same
03/29/2007US20070069213 Flexible adjustment of on-die termination values in semiconductor device
03/29/2007US20070069212 Flat panel display and method for manufacturing the same
03/29/2007US20070069211 Display apparatus and manufacturing method thereof
03/29/2007US20070069210 Liquid crystal display device and method for manufacturing the same
03/29/2007US20070069206 Flat panel display device having an organic thin film transistor and method of manufacturing the same
03/29/2007US20070069205 Organic electroluminescent display device
03/29/2007US20070069204 Liquid crystal display panel and method of fabricating the same
03/29/2007US20070069203 Pyrene derivatives and organic electronic device using pyrene derivatives
03/29/2007US20070069201 Organic bistable device and method for manufacturing the same
03/29/2007US20070069200 OLED separating structures
03/29/2007US20070069199 Interface conditioning to improve efficiency and lifetime of organic electroluminescence devices
03/29/2007US20070069196 Epitaxial wafer for LED and light emitting diode
03/29/2007US20070069193 Metal-insulator transition switching transistor and method for manufacturing the same
03/29/2007US20070069192 Thermal switching element and method for manufacturing the same
03/29/2007DE10234488B4 Verfahren zur Herstellung einer lokalisierten Implantationsbarriere in einer Polysiliziumleitung A process for producing a localized implantation barrier in a polysilicon line
03/29/2007DE10232425B4 Halbleiterelement Semiconductor element
03/29/2007DE102006042282A1 Halbleiterbauteil und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
03/29/2007DE102006038860A1 Halbleitervorrichtung Semiconductor device
03/29/2007DE102005045613A1 Method of preparing SiC semiconductor elements having predetermined number of individual functional elements useful for elements subjected to very high temperatures and stringent environmental conditions, of electrically insulating film
03/29/2007DE102004042784B4 Beschleunigungssensor und Verfahren zum Herstellen eines Beschleunigungssensors Acceleration sensor and method for producing an acceleration sensor
03/28/2007EP1768189A1 Reprogrammable non volatile memory device
03/28/2007EP1768188A1 Electronic device manufacturing method and electronic device
03/28/2007EP1767490A2 Nanometric mechanical oscillator, method of fabricating the same, and measurement apparatus using the same
03/28/2007EP1766694A2 Broadband light emitting device
03/28/2007EP1766691A2 Selective implementation of barrier layers to achieve threshold voltage control in cmos device fabrication with high k dielectrics
03/28/2007EP1766689A1 Tunnel junctions for long-wavelength vcsels
03/28/2007EP1766688A1 Heterostructure field effect transistor
03/28/2007EP1766687A1 Soi vertical bipolar power component
03/28/2007EP1766686A1 Solid state image pickup device and its manufacturing method
03/28/2007EP1766683A2 Universal interconnect die
03/28/2007EP1766676A1 Hybrid epitaxy support and method for making same
03/28/2007EP1766672A2 Parylene-based flexible multi-electrode arrays for neuronal stimulation and recording and methods for manufacturing the same
03/28/2007EP1766671A1 Method of making mirror image memory cell transistor pairs featuring poly floating spaces
03/28/2007EP1766387A2 An innovative screening method for coronary heart disease and stroke
03/28/2007EP1766108A1 Formation of nanowhiskers on a substrate of dissimilar material
03/28/2007EP1620891A4 Multi-height finfets
03/28/2007EP1428248A4 Self-aligned transistor and diode toplogies in silicon carbide through the use of selective epitaxy or selective implantation
03/28/2007EP0829099B1 Bidirectional blocking accumulation-mode trench power mosfet
03/28/2007EP0777910B1 Process for manufacture of mos gated device with reduced mask count
03/28/2007CN1938875A Functional molecular element
03/28/2007CN1938862A 半导体器件 Semiconductor devices
03/28/2007CN1938861A Semiconductor device having multi-gate structure and method of manufacturing the same
03/28/2007CN1938860A Semiconductor device and semiconductor device manufacturing method
03/28/2007CN1938859A Wide bandgap transistor devices with field plates
03/28/2007CN1938858A Semiconductor device having a laterally modulated gate workfunction and method of fabrication
03/28/2007CN1938857A Process for producing schottky junction semiconductor device
03/28/2007CN1938856A Vertical color filter sensor group and semiconductor integrated circuit fabrication method for fabricating same
03/28/2007CN1938848A Electronic package having a selaing structure on predetermined area, and the method thereof
03/28/2007CN1938846A Sensor device and sensor system, and manufacturing method therefor
03/28/2007CN1938836A Memory with double-gate finfets and method of fabrication
03/28/2007CN1938832A Method and apparatus for forming metal silicate film, and method for manufacturing semiconductor device
03/28/2007CN1938825A Semiconductor device and method for fabricating the same
03/28/2007CN1938821A Compound semiconductor element, manufacturing method of compound semiconductor element, diode element
03/28/2007CN1938820A Bipolar semiconductor device and process for producing the same
03/28/2007CN1938786A Non-volatile memory cell using high-k material and inter-gate programming
03/28/2007CN1938321A Novel compound and organic electronic device using such compound
03/28/2007CN1937276A Display device and its manufacturing method
03/28/2007CN1937257A High-voltage SensorFET device
03/28/2007CN1937256A Split gate nand flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing
03/28/2007CN1937255A Semiconductor device and method for forming the same
03/28/2007CN1937254A Thinfilm transistor device for reducing leaping voltage
03/28/2007CN1937253A Systems and methods for forming zirconium and/or hafnium-containing layers
03/28/2007CN1937252A Method of manufacturing a semiconductor device
03/28/2007CN1937251A 半导体器件 Semiconductor devices
03/28/2007CN1937250A Method of fabricating a semiconductor device
03/28/2007CN1937249A Aluminium gallium nitride/gallium nitride high electronic migration rate transistor and its manufacturing method
03/28/2007CN1937248A Ultrahigh voltage metal oxide semiconductor transistor component
03/28/2007CN1937247A Field-effect transistor
03/28/2007CN1937246A Composite buffer layer nitride high electronic migration rate transmistor epitaxial structure and its manufacturing method
03/28/2007CN1937245A In-line inserted semiconductor device
03/28/2007CN1937244A Negative electrode branching semiconductor device
03/28/2007CN1937243A Power device explosion-proof method and device
03/28/2007CN1937242A Transistor electrode structure, and pixel structure and display device comprising same
03/28/2007CN1937241A Transistor structure and control unit having same
03/28/2007CN1937230A Landscape insulation bar double-pole-type transistor
03/28/2007CN1937207A Symmetric inductive component
03/28/2007CN1937183A Method and structure for using strain silicon transistor grid patternization hard mask
03/28/2007CN1937182A Method for forming secondary partition sheet used for strain silicon MOS transistor and structure thereof
03/28/2007CN1937181A Semiconductor element with nickel silicide and method for preparing nickel silicide
03/28/2007CN1937176A Method of forming a low resistance semiconductor contact and structure therefor
03/28/2007CN1937078A Multi-operation mode nonvolatile memory
03/28/2007CN1937019A Transistor circuit, display panel and electronic apparatus
03/28/2007CN1936681A 液晶显示器件 Liquid crystal display device
03/28/2007CN1936661A Arrangement of spacers in a liquid crystal display device
03/28/2007CN1936591A Displacement detection device
03/28/2007CN1307727C Semiconductor device with SOI region and bulk region and method of manufacture thereof
03/28/2007CN1307726C Semiconductor with silicide film and method for producing semiconductor
03/28/2007CN1307725C Field effect transistor
03/28/2007CN1307724C Method of manufacturing semiconductor device using halo implantation, and system thereof
03/28/2007CN1307723C Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making same
03/28/2007CN1307711C Semiconductor integrated circuit and its manufacturing method
03/28/2007CN1307709C Semiconductor with Si-Ge grid and producing method thereof
03/28/2007CN1307698C Device having resin package and method of producing the same
03/28/2007CN1307697C Thin film transistor and manufacturing method of thin film transistor
03/28/2007CN1307696C Method for preparing semiconductor device with super shallow and super steep backward surface groove
03/28/2007CN1307691C Method for making semiconductor
03/28/2007CN1307689C A method of forming differential spacers for individual optimization of N-channel and P-channel transistors
03/28/2007CN1307688C Xe preamorphizing implantation method
03/28/2007CN1307412C Sensor formed on silicon on insulator structure and having reduced power up drift
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