Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2007
03/22/2007US20070063216 Semiconductor package
03/22/2007US20070063211 Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
03/22/2007US20070063203 Semiconductor integrated circuit device with protection capability for protection circuits from static electrical charge
03/22/2007US20070063200 Sequential lateral solidification device and method of crystallizing silicon using the same
03/22/2007US20070063199 Semiconductor apparatus having semiconductor circuits made of semiconductor devices, and method of manufacture thereof
03/22/2007US20070063198 Semiconductor device
03/22/2007US20070063197 Adaptive input-cell circuitry useful in configurable electronic controllers
03/22/2007US20070063196 Light emitting device
03/22/2007US20070063195 Flat panel display and manufacturing method of flat panel display
03/22/2007US20070063194 Organic electroluminescent display device for applying to the field of full-color display and method for manufacturing the same
03/22/2007US20070063193 Organic memory device having memory active region formed by embossing structure
03/22/2007US20070063192 Systems for emitting light incorporating pixel structures of organic light-emitting diodes
03/22/2007US20070063189 Compounds based on fluoranthene and use thereof
03/22/2007US20070063187 Switching element
03/22/2007US20070063186 Method for making a semiconductor device including a front side strained superlattice layer and a back side stress layer
03/22/2007US20070063185 Semiconductor device including a front side strained superlattice layer and a back side stress layer
03/22/2007US20070063184 Phase modulation device, phase modulation device fabrication method, crystallization apparatus, and crystallization method
03/22/2007US20070063183 Substrate having silicon dots
03/22/2007US20070063180 Electrically rewritable non-volatile memory element and method of manufacturing the same
03/22/2007US20070062282 Combined sensor and its fabrication method
03/22/2007DE19739547B4 Leistungs-Mosfet mit Heteroübergang und Verfahren für dessen Herstellung Power MOSFET with heterojunction and method for its preparation
03/22/2007DE19509160B4 Halbleiterbeschleunigungssensoren Semiconductor acceleration sensors
03/22/2007DE112005000729T5 Halbleiterbauelement mit einer lateral modulierten Gate-Austrittsarbeit und Herstellungsverfahren A semiconductor device having a laterally modulated gate work function and manufacturing processes
03/22/2007DE112005000335T5 Veritkaler und gemeinsamer Drain für komplementäre Nitridtransistoren Veritkaler and common drain for complementary Nitridtransistoren
03/22/2007DE112004002640T5 Damaszener-Tri-Gate-FinFET Damascene tri-gate FinFET
03/22/2007DE102005046738A1 Bipolar transistor with protection against electrical overloading by transients or peaks, includes emitter structure comprised of two distinct layers
03/22/2007DE102005042827A1 High-voltage FET with source drain gate and channel has doped drift region having potential barrier spaced from the body region
03/22/2007DE102005039940A1 Bondverbindung für Leistungshalbleiterbauelemente Bond for power semiconductor devices
03/22/2007DE102005038260B3 Semiconductor component and production process for high current or voltage devices has front and rear contacts and divided edge zone around cell field region
03/22/2007DE10051909B4 Randabschluss für Hochvolt-Halbleiterbauelement und Verfahren zum Herstellen eines Isolationstrenches in einem Halbleiterkörper für solchen Randabschluss Edge termination for high voltage semiconductor device and method of manufacturing an isolation trench in a semiconductor body for such an edge termination
03/21/2007EP1764839A2 Transparent thin film transistor (TFT) and its method of manufacture
03/21/2007EP1764838A2 Spin transistor using spin-orbit coupling induced magnetic field
03/21/2007EP1764827A1 Recursive spacer defined patterning
03/21/2007EP1763898A2 Field-effect transistors fabricated by wet chemical deposition
03/21/2007EP1460130B1 Potentiometric dna microarray, process for producing the same and method of analyzing nucleic acid
03/21/2007EP1114465B1 Semiconductor device having ohmic contact and a method for providing ohmic contact with such a device
03/21/2007CN2881961Y MOS field effect transistor with isolation structure for monlithic integration
03/21/2007CN1934910A Highly efficient organic light-emitting device using substrate or electrode having nanosized half-spherical convex and method for preparing
03/21/2007CN1934714A Organic semiconductor element and organic el display device using the same
03/21/2007CN1934713A Pattern formation method, thin film transistor, display device and manufacturing method of these device, and television set
03/21/2007CN1934712A Semiconductor device having channel including multicomponent metal oxide
03/21/2007CN1934711A Semiconductor device having channel including multicomponent oxide
03/21/2007CN1934707A Method of forminig thin film integrated circuit
03/21/2007CN1934706A Multi-terminal device having logic function
03/21/2007CN1934705A 半导体装置 Semiconductor device
03/21/2007CN1934703A Monolithically integrated circuit for radio frequency applications
03/21/2007CN1934687A Manufacturing method of thin film transistor
03/21/2007CN1934686A Field effect transistor and method of manufacturing a field effect transistor
03/21/2007CN1934682A Laser irradiation method and laser irradiation apparatus
03/21/2007CN1933204A Semiconductor light emitting device and device
03/21/2007CN1933203A Semiconductor light emitting device and device
03/21/2007CN1933182A Thin film transistor and producing method thereof
03/21/2007CN1933181A Semiconductor device and method of fabricating semiconductor device
03/21/2007CN1933180A 半导体器件 Semiconductor devices
03/21/2007CN1933179A 半导体装置 Semiconductor device
03/21/2007CN1933178A 半导体器件 Semiconductor devices
03/21/2007CN1933177A High-voltage metaloxide semiconductor transistor and producing method thereof
03/21/2007CN1933176A Strontium bismuth tantalate-strontium barium titanate heterogeneous dielectric material and synthesizing method and application thereof
03/21/2007CN1933175A Selective deposition of germanium spacers on nitride
03/21/2007CN1933164A Semiconductor device and a manufacturing method for the same
03/21/2007CN1933162A Programmable non-volatile memory device and its forming method
03/21/2007CN1933142A Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method
03/21/2007CN1933128A Thin film transistor structure and substrate producing method for liquid crystal display device
03/21/2007CN1933125A Storing unit forming method, high coupling rate storing device and forming method thereof
03/21/2007CN1933111A Method for producing space wall, cleaning method after etching thereof and semiconductor element
03/21/2007CN1933105A Semiconductor device and method for manufacturing the same
03/21/2007CN1933099A Method for manufacturing semiconductor device
03/21/2007CN1932625A Liquid crystal display and method thereof
03/21/2007CN1932623A 液晶显示器 LCD Monitor
03/21/2007CN1932622A Transflective liquid crystal display device and method of fabricating the same
03/21/2007CN1306620C Silicon overvoltage protective tube
03/21/2007CN1306619C Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
03/21/2007CN1306618C Thin film circuit device, manufacturing method thereof, electro-optical apparatus, and electronic instrument
03/21/2007CN1306616C Semiconductor memory containing MOS transistor therewith floating grid and controlling grid
03/21/2007CN1306599C Semiconductor device and production method therefor
03/21/2007CN1306592C Laying-out designing device and method for semiconductor elements
03/21/2007CN1306591C Semiconductor device
03/21/2007CN1306587C Semiconductor device with shallow trench isolation and its manufacture method
03/21/2007CN1306586C Semiconductor device, method of manufacturing semiconductor device, and method of evaluating manufacturing process of semiconductor device
03/21/2007CN1306585C Stress leading space layer and its producing method
03/21/2007CN1306571C Fabricating method of metallic silicide film and metal-oxide semiconductor
03/21/2007CN1306561C Transistor metal gate structure that minimizes non-planarity effects and method of formation
03/21/2007CN1306560C n-electrode for III group nitride based compound semiconductor element
03/21/2007CN1306559C Semiconductor device including semiconductor thin films having different crystallinity, substrate of the same, and manufacturing method of the same, and liquid crystal display and manufacturing method
03/21/2007CN1306556C Method of producing thin-film device
03/21/2007CN1306332C 薄膜晶体管阵列基板及其修补方法 The thin film transistor array substrate and repairing method
03/20/2007US7194719 Basic cell, edge cell, wiring shape, wiring method, and shield wiring structure
03/20/2007US7194399 Automatic check for cyclic operating conditions for SOI circuit simulation
03/20/2007US7193902 Method of erasing a flash memory cell
03/20/2007US7193891 Spin based sensor device
03/20/2007US7193693 Apparatus for manufacturing flat panel display devices
03/20/2007US7193663 Electro-optical device and electronic apparatus
03/20/2007US7193440 Configurable circuits, IC's, and systems
03/20/2007US7193360 Self light emitting display device and information equipment employing the same
03/20/2007US7193327 Barrier structure for semiconductor devices
03/20/2007US7193323 Copper tungsten phosphide formed by electrodeposition of layers
03/20/2007US7193322 Sacrificial shallow trench isolation oxide liner for strained-silicon channel CMOS devices
03/20/2007US7193311 Multi-chip circuit module and method for producing the same
03/20/2007US7193306 Semiconductor structure having stacked semiconductor devices
03/20/2007US7193297 Semiconductor device, method for manufacturing the same, circuit substrate and electronic device
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