Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2007
03/22/2007US20070067056 Method for optimizing an industrial product, system for optimizing an industrial product and method for manufacturing an industrial product
03/22/2007US20070066079 Sealing porous dielectrics with silane coupling reagents
03/22/2007US20070066074 Shallow trench isolation structures and a method for forming shallow trench isolation structures
03/22/2007US20070066073 Like integrated circuit devices with different depth
03/22/2007US20070066052 Semiconductor device having three-dimensional construction and method for manufacturing the same
03/22/2007US20070066043 Semiconductor device and fabrication process thereof
03/22/2007US20070066020 III-nitride current control device and method of manufacture
03/22/2007US20070066018 Methods of fabricating vertical channel field effect transistors having insulating layers thereon
03/22/2007US20070066017 Horizontal memory devices with vertical gates
03/22/2007US20070066015 Capacitor, method of forming the same, semiconductor device having the capacitor and method of manufacturing the same
03/22/2007US20070066006 Method and Structure for Electrostatic Discharge Protection of Photomasks
03/22/2007US20070066004 Semiconductor device and its manufacture method
03/22/2007US20070065996 Method for manufacturing a semiconductor device
03/22/2007US20070065995 Semiconductor device and method of manufacturing the same
03/22/2007US20070065987 Stacked mass storage flash memory package
03/22/2007US20070065976 Method and apparatus for fabricating organic light emitting display device
03/22/2007US20070065968 Fabrication of silicon microphone
03/22/2007US20070065966 Process for single and multiple level metal-insulator-metal integration with a single mask
03/22/2007US20070065072 Electro-optical device, manufacturing method of the same, and electronic apparatus
03/22/2007US20070064498 Flash memory devices including multiple dummy cell array regions
03/22/2007US20070064139 Solid state image pickup device and its manufacture
03/22/2007US20070063740 Nanotube-based switching elements and logic circuits
03/22/2007US20070063622 Adjusted frequency temperature coefficient resonator
03/22/2007US20070063356 Method of fabricating SRAM device
03/22/2007US20070063318 Semiconductor device for bonding connection
03/22/2007US20070063317 Overlay key, method of forming the overlay key, semiconductor device including the overlay key and method of manufacturing the semiconductor device
03/22/2007US20070063316 Flip chip semiconductor device and process of its manufacture
03/22/2007US20070063313 Electronic circuit arrangement
03/22/2007US20070063312 Semiconductor device having fuse element
03/22/2007US20070063311 Rewiring Substrate Strip Having a Plurality of Semiconductor Component Positions
03/22/2007US20070063310 A metal fuse for semiconductor devices and methods of manufacturing thereof
03/22/2007US20070063309 Integrated circuitry and method for manufacturing the same
03/22/2007US20070063308 Integrated circuit with partly silicidated silicon layer
03/22/2007US20070063307 Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof
03/22/2007US20070063304 Field-effect transistor, single-electron transistor and sensor using the same
03/22/2007US20070063298 Magneto-resistance transistor and method thereof
03/22/2007US20070063297 Displacement detection device
03/22/2007US20070063296 Methods of modulating the work functions of film layers
03/22/2007US20070063295 Gate electrode, method of forming the same, transistor having the gate electrode, method of manufacturing the same, semiconductor device having the gate electrode and method of manufacturing the same
03/22/2007US20070063294 Semiconductor Device Having a Fully Silicided Gate Electrode and Method of Manufacture Therefor
03/22/2007US20070063293 Semiconductor device
03/22/2007US20070063292 Semiconductor apparatus integrating an electrical device under an electrode pad
03/22/2007US20070063291 Semiconductor device with dummy electrode
03/22/2007US20070063290 Metal oxide semiconductor transistor
03/22/2007US20070063289 Semiconductor circuit device and display data line driver
03/22/2007US20070063288 Semiconductor device
03/22/2007US20070063287 Semiconductor device
03/22/2007US20070063286 Semiconductor device and method for manufacturing the same
03/22/2007US20070063283 Thin film transistor, liquid crystal display using thin film transistor, and method of manufacturing thin film transistor
03/22/2007US20070063282 SOI-like structures in a bulk semiconductor substrate
03/22/2007US20070063281 Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
03/22/2007US20070063275 Semiconductor device and method for fabricating the same
03/22/2007US20070063274 Semiconductor device
03/22/2007US20070063273 Semiconductor device and method for manufacturing the same
03/22/2007US20070063272 Semiconductor power device with insulated gate formed in a trench, and manufacturing process thereof
03/22/2007US20070063271 Lateral double-diffused field effect transistor and integrated circuit having same
03/22/2007US20070063270 Transistors including laterally extended active regions and methods of fabricating the same
03/22/2007US20070063269 Trench IGBT with increased short circuit capability
03/22/2007US20070063268 Non-volatile memory, and operation and fabrication of the same
03/22/2007US20070063267 Self aligned 1 bit local SONOS memory cell
03/22/2007US20070063266 Semiconductor device and method for manufacturing the same
03/22/2007US20070063265 Non-volatile semiconductor memory devices and methods of fabricating the same
03/22/2007US20070063264 A non-volatile memory array
03/22/2007US20070063263 Non-volatile memory devices and method for forming the same
03/22/2007US20070063262 NAND memory arrays
03/22/2007US20070063261 Necked Finfet device
03/22/2007US20070063260 Floating gate and fabricating method thereof
03/22/2007US20070063259 Floating-gate memory cell
03/22/2007US20070063258 Isolation trenches for memory devices
03/22/2007US20070063257 Nonvolatile memory devices including high-voltage MOS transistors with floated drain-side auxiliary gates and methods of fabricating the same
03/22/2007US20070063255 Non-volatile memory device and method of manufacturing the same
03/22/2007US20070063254 Nonvolatile memory device and method for fabricating the same
03/22/2007US20070063253 Semiconductor device and method of manufacturing the same
03/22/2007US20070063252 Non-volatile memory and SRAM based on resonant tunneling devices
03/22/2007US20070063251 Semiconductor product including logic, non-volatile memory and volatile memory devices and method for fabrication thereof
03/22/2007US20070063250 Split gate field effect transistor device with aligned gate electrode sidewalls
03/22/2007US20070063249 Swivel cap for flash memory device
03/22/2007US20070063248 High write and erase efficiency embedded flash cell
03/22/2007US20070063246 Solid capacitor and manufacturing method thereof
03/22/2007US20070063245 Metal plating using seed film
03/22/2007US20070063244 Trench metal-insulator-metal (mim) capacitors and method of fabricating same
03/22/2007US20070063243 Structure Of Embedded Capacitors And Fabrication Method Thereof
03/22/2007US20070063242 High density semiconductor memory and method of making
03/22/2007US20070063241 Semiconductor device and method for fabricating the same
03/22/2007US20070063240 Integrated electronic circuit incorporating a capacitor
03/22/2007US20070063239 Semiconductor device
03/22/2007US20070063238 Semiconductor memory and driving method for the same
03/22/2007US20070063237 Magnetic device having multilayered free ferromagnetic layer
03/22/2007US20070063236 Magnetic device having stabilized free ferromagnetic layer
03/22/2007US20070063231 Power semiconductor device with integrated passive component
03/22/2007US20070063230 Asymmetrically stressed cmos finfet
03/22/2007US20070063229 Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice
03/22/2007US20070063228 Thin film transistor, semiconductor device, display, crystallization method, and method of manufacturing thin film transistor
03/22/2007US20070063227 Transistor and cvd apparatus used to deposit gate insulating film thereof
03/22/2007US20070063226 Laser irradiation apparatus and laser irradiation method
03/22/2007US20070063225 Semiconductor device, and method for manufacturing semiconductor device
03/22/2007US20070063224 Metal insulator semiconductor field effect transistor having fin structure
03/22/2007US20070063222 Semiconductor device and method for manufacturing the same
03/22/2007US20070063218 Semiconductor device and electrostatic discharge protection device
03/22/2007US20070063217 Bonded-wafer Superjunction Semiconductor Device
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