Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2007
05/29/2007US7223632 Active matrix substrate, method of manufacturing the same, and display device
05/29/2007US7223624 Micromechanical device with thinned cantilever structure and related methods
05/29/2007US7223623 Method for forming a modified semiconductor having a plurality of band gaps
05/29/2007US7223622 Active-matrix substrate and method of fabricating same
05/29/2007US7223621 Method of fabricating an array substrate
05/29/2007US7223616 Test structures in unused areas of semiconductor integrated circuits and methods for designing the same
05/29/2007US7223614 Method for manufacturing semiconductor device, and semiconductor device
05/29/2007US7223613 Ferroelectric polymer memory with a thick interface layer
05/29/2007US7223504 mask includes multiple transmissive areas having a plurality of first slits for adjusting energy of the laser illumination passing through the mask; and an opaque area; for laser illumination to convert amorphous silicon into polysilicon
05/29/2007US7223320 Method and apparatus for expanding a semiconductor wafer
05/29/2007CA2392041C Pendeoepitaxial growth of gallium nitride layers on sapphire substrates
05/24/2007WO2007059387A2 Finfet transistor fabricated in bulk semiconducting material
05/24/2007WO2007059239A1 Method of forming non-volatile memory cell using sacrificial pillar spacers and non-volatile memory cell formed according to the method
05/24/2007WO2007059220A2 Methods to shape the electric field in electron devices, passivate dislocations and point defects, and enhance the luminescence efficiency of optical devices
05/24/2007WO2007059146A2 Led having lateral current injection active region
05/24/2007WO2007058845A2 Vertical diode doped with antimony to avoid or limit dopant diffusion
05/24/2007WO2007058329A1 Semiconductor device and manufacturing method thereof
05/24/2007WO2007058265A1 Bipolar transistor and its manufacturing method
05/24/2007WO2007058248A1 Semiconductor thin film, method for producing same, and thin film transistor
05/24/2007WO2007058232A1 Semiconductor thin film and method for manufacturing same, and thin film transistor
05/24/2007WO2007058231A1 Semiconductor thin film, method for producing same, thin film transistor and active-matrix-driven display panel
05/24/2007WO2007058183A1 Photoelectric conversion device
05/24/2007WO2007058144A1 Hot electron transistor
05/24/2007WO2007058042A1 Semiconductor device and method for manufacturing same
05/24/2007WO2007058010A1 Semiconductor pressure sensor and its fabrication method
05/24/2007WO2007057802A1 Metal-base nanowire transistor
05/24/2007WO2007057357A2 Semiconductor devices having complementary multiple-gate transistors with different gate dielectrics and methods of manufacture thereof
05/24/2007WO2007057137A1 High-voltage transistor and component containing the latter
05/24/2007WO2007041710A3 Gallium nitride material transistors and methods for wideband applications
05/24/2007WO2007038343A9 Power semiconductor device with integrated passive component
05/24/2007WO2007032149A9 High-frequency device using magnetic multi-layer film dot
05/24/2007WO2007028016A3 Bipolar method and structure with depletable collector colums
05/24/2007WO2007021736A3 Semiconductor device having improved mechanical and thermal reliability
05/24/2007WO2007004595A3 Semiconductor device and manufacturing method thereof
05/24/2007WO2006135031A3 Bipolar semiconductor device and manufacturing method thereof
05/24/2007WO2006113061A3 A hybrid bulk-soi 6t-sram cell for improved cell stability and performance
05/24/2007WO2006102429A3 Above room temperature ferromagnetic silicon
05/24/2007WO2006078281A3 Systems and methods for harvesting and integrating nanowires
05/24/2007WO2006029388A3 Method and apparatus for fabricating low-k dielectrics, conducting films, and strain-controlling conformable silica-carbon materials
05/24/2007WO2005119913A3 Schottky device
05/24/2007WO2004102634A3 Metal mems devices and methods of making same
05/24/2007WO2004077523A3 Micromachined assembly with a multi-layer cap defining cavity
05/24/2007US20070117963 Polythiophenes and devices thereof
05/24/2007US20070117392 Coiled circuit device with active circuitry and methods for making the same
05/24/2007US20070117391 Method for manufacturing multi-thickness gate dielectric layer of semiconductor device
05/24/2007US20070117388 Fabrication of semiconductor devices
05/24/2007US20070117381 Silicon rich barrier layers for integrated circuit devices
05/24/2007US20070117369 Method for interconnecting active and passive components, and a resulting thin heterogeneous component
05/24/2007US20070117366 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods
05/24/2007US20070117353 Method for Forming Oxide on Ono Structure
05/24/2007US20070117340 Integrated circuit arrangement with capacitor in an interconnect layer and method
05/24/2007US20070117338 Via array capacitor, wiring board incorporating a via array capacitor, and method of manufacturing the same
05/24/2007US20070117336 Minimizing Degradation of SiC Bipolar Semiconductor Devices
05/24/2007US20070117334 Structure and method for reducing miller capacitance in field effect transistors
05/24/2007US20070117332 Semiconductor devices having a pocket line and methods of fabricating the same
05/24/2007US20070117331 Reliable high voltage gate dielectric layers using a dual nitridation process
05/24/2007US20070117330 Sensing amplifier
05/24/2007US20070117329 Insulated gate type semiconductor device and method for fabricating the same
05/24/2007US20070117328 Vertical transistor with field region structure
05/24/2007US20070117325 Semiconductor Device and Manufacturing Method Therefor
05/24/2007US20070117324 Vertical MOS transistor and fabrication process
05/24/2007US20070117322 Method for fabricating NAND type dual bit nitride read only memory
05/24/2007US20070117321 Flash memory device and method of manufacturing the same
05/24/2007US20070117320 Flash memory device and method for fabricating the same
05/24/2007US20070117319 Programming and erasing structure for a floating gate memory cell and method of making
05/24/2007US20070117318 Method of manufacturing NAND flash memory device
05/24/2007US20070117317 Stacked memory
05/24/2007US20070117315 Memory cell device and manufacturing method
05/24/2007US20070117313 Mim capacitor and method of fabricating same
05/24/2007US20070117311 Three-dimensional single transistor semiconductor memory device and methods for making same
05/24/2007US20070117307 Trench memory cells with buried isolation collars, and methods of fabricating same
05/24/2007US20070117306 Semiconductor device and manufacturing method thereof
05/24/2007US20070117305 Semiconductor device having reduced gate charge and reduced on resistance and method
05/24/2007US20070117303 Semiconductor memory device (as amended)
05/24/2007US20070117299 Memory cells having underlying source-line connections
05/24/2007US20070117297 CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming same
05/24/2007US20070117293 Semiconductor device and method of manufacturing the same
05/24/2007US20070117289 thin film apparatus, a manufacturing method of the thin film apparatus, an active matrix substrate, a manufacturing method of the active matrix substrate, and an electro-optical apparatus having the active matrix substrate
05/24/2007US20070117284 Thin film transistor, method of manufacturing same, display device, method of modifying an oxide film, method of forming an oxide film, semiconductor device, method of manufacturing semiconductor device, and apparatus for manufacturing semiconductor device
05/24/2007US20070117282 Thin film transistor and method for manufacturing the same
05/24/2007US20070117277 Methods for fabricating protective layers on semiconductor device components
05/24/2007US20070117274 Apparatus incorporating small-feature-size and large-feature-size components and method for making same
05/24/2007US20070117266 Method of fabricating a multi-die semiconductor package assembly
05/24/2007US20070117257 Organic light emitting diode display
05/24/2007US20070117256 Control layer for a nanoscale electronic switching device
05/24/2007US20070117255 Formation of contacts on semiconductor substrates
05/24/2007US20070117250 Method of increasing a free carrier concentration in a semiconductor substrate
05/24/2007US20070117244 Preferentially deposited lubricant to prevent anti-stiction in micromechanical systems
05/24/2007US20070117239 Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus
05/24/2007US20070116895 N,N'-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
05/24/2007US20070115597 Spin injection devices
05/24/2007US20070115416 Liquid Crystal Electrooptical Device
05/24/2007US20070114918 Light emitting device
05/24/2007US20070114636 Electronic device contact structures
05/24/2007US20070114635 Integrated circuit devices having corrosion resistant fuse regions and methods of fabricating the same
05/24/2007US20070114634 Integrated passive device system
05/24/2007US20070114633 Integrated circuit device with a circuit element formed on an active region having rounded corners
05/24/2007US20070114632 Transistor having dielectric stressor elements at different depths from a semiconductor surface for applying shear stress
05/24/2007US20070114631 Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device
05/24/2007US20070114624 Moisture resistant differential pressure sensors