Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2007
05/10/2007US20070102783 Insultating structures
05/10/2007US20070102782 Triple operation voltage device
05/10/2007US20070102776 Replacement metal gate transistors with reduced gate oxide leakage
05/10/2007US20070102775 Methods of fabricating semiconductor devices and structures thereof
05/10/2007US20070102774 Gate structure and method of fabricating the same
05/10/2007US20070102773 Semiconductor device and method of manufacturing same
05/10/2007US20070102772 Self-aligned nanometer-level transistor defined without lithography
05/10/2007US20070102771 Metal oxide semiconductor device
05/10/2007US20070102770 Thin film transistor array panel and manufacturing method thereof
05/10/2007US20070102769 Dual SOI structure
05/10/2007US20070102768 Semiconductor device and a method of manufacturing the same
05/10/2007US20070102767 Method of forming dual gate dielectric layer
05/10/2007US20070102766 Semiconductor transistors with contact holes close to gates
05/10/2007US20070102759 Method for forming an integrated circuit with high voltage and low voltage devices
05/10/2007US20070102758 Semiconductor device and method for manufacturing the same
05/10/2007US20070102757 Semiconductor device and a method of manufacturing the same
05/10/2007US20070102756 FinFET transistor fabricated in bulk semiconducting material
05/10/2007US20070102755 Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device
05/10/2007US20070102754 Non-volatile memory device
05/10/2007US20070102753 Cross diffusion barrier layer in gate structure
05/10/2007US20070102752 Flash memory device and method of fabricating the same
05/10/2007US20070102751 Non-volatile memory device and method of manufacturing the same
05/10/2007US20070102750 Charge trap flash memory device, fabrication method thereof, and write/read operation control method thereof
05/10/2007US20070102749 Semiconductor memory device and method of fabricating the same
05/10/2007US20070102748 Gate electrode and MOS transistor including gate and method of fabricating the same
05/10/2007US20070102747 Complementary carbon nanotube triple gate technology
05/10/2007US20070102745 Capacitor structure
05/10/2007US20070102744 Semiconductor device and method of manufacturing the same
05/10/2007US20070102743 Switchable memory diode - a new memory device
05/10/2007US20070102742 Capacitor and method for fabricating the same
05/10/2007US20070102741 Thin film capacitor-embedded printed circuit board and method of manufacturing the same
05/10/2007US20070102735 Semiconductor device and method for manufacturing the semiconductor device
05/10/2007US20070102734 Semiconductor device and method of fabricating the same
05/10/2007US20070102733 Multi-chip assembly with optically coupled die
05/10/2007US20070102732 Metal oxide semiconductor device
05/10/2007US20070102730 Switching circuit and semicondcutor device
05/10/2007US20070102727 Field-effect transistor
05/10/2007US20070102726 Semiconductor device for improving channel mobility
05/10/2007US20070102725 Insulated gate planar integrated power device with co-integrated Schottky diode and process
05/10/2007US20070102713 Semiconductor device and manufacturing method thereof
05/10/2007US20070102709 P-type group ii-vi semiconductor compounds
05/10/2007US20070102708 Semiconductor device provided by silicon carbide substrate and method for manufacturing the same
05/10/2007US20070102707 Array substrate for liquid crystal display device and method of fabricating the same
05/10/2007US20070102706 Semiconductor device and manufacturing method thereof
05/10/2007US20070102705 Thin film transistors and semiconductor constructions
05/10/2007US20070102704 Semiconductor Device and Manufacturing Method
05/10/2007US20070102703 Semiconductor device and method of manufacturing the same
05/10/2007US20070102702 Semiconductor device including active matrix circuit
05/10/2007US20070102699 Organic thin film transistor, flat panel display apparatus having the same, and a method of manufacturing organic thin film transistor
05/10/2007US20070102698 Organic electronic device
05/10/2007US20070102697 Junction structure of organic semiconductor device, organic thin film transistor and fabricating method thereof
05/10/2007US20070102693 Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device
05/10/2007US20070102692 Semiconductor light emitting device
05/10/2007DE102005051994A1 Verformungsverfahrenstechnik in Transistoren auf Siliziumbasis unter Anwendung eingebetteter Halbleiterschichten mit Atomen mit einem großen kovalenten Radius Deformation processing technology in silicon-based transistors by using semiconductor layers with embedded atoms with a large covalent radius
05/10/2007CA2549454A1 Nano-based device and method
05/09/2007EP1783836A2 L- and U-gate devices for SOI/SOS applications
05/09/2007EP1783826A1 Junction field-effect transistor
05/09/2007EP1783498A2 Sensor block
05/09/2007EP1783250A2 Semiconductor material, production method thereof and semiconductor device
05/09/2007EP1782661A2 Electronic device and manufacturing method thereof
05/09/2007EP1782483A2 Semiconductor devices and the manufacture thereof
05/09/2007EP1782482A1 Bipolar mosfet devices
05/09/2007EP1782479A2 Adjustable ccd charge splitter
05/09/2007EP1782474A2 High strain glass/glass-ceramic containing semiconductor-on-insulator structures
05/09/2007EP1782460A1 Floating gate memory cell
05/09/2007EP1782458A1 Copper doped magnetic semiconductors
05/09/2007EP1782455A1 Ic chip and its manufacturing method
05/09/2007EP1668692A4 Adjustable self-aligned air gap dielectric for low capacitance wiring
05/09/2007EP1664387A4 Deposition method for nanostructure materials
05/09/2007EP1523078B1 Optical semiconductor device
05/09/2007EP1384268A4 Three-dimensional metal devices highly suspended above semiconductor substrate, their circuit model, and method for manufacturing the same
05/09/2007EP1203748B1 Microdevice and its production method
05/09/2007EP1066652B1 Trench-gate semiconductor devices and their manufacture
05/09/2007CN2899115Y 半导体结构 Semiconductor structure
05/09/2007CN1961617A Organic electroluminescent device, process for fabricating the same and display
05/09/2007CN1961436A Method of fabricating an optoelectronic device having a bulk heterojunction
05/09/2007CN1961435A Organic compound having at both ends different functional groups differing in reactivity in elimination reaction, organic thin films, organic device, and processes for producing these
05/09/2007CN1961429A Gate stack and gate stack etch sequence for metal gate integration
05/09/2007CN1961428A Semiconductor package having integrated metal parts for thermal enhancement
05/09/2007CN1961427A Method and device with durable contact on silicon carbide
05/09/2007CN1961420A Semiconductor device and method for manufacturing the same
05/09/2007CN1961413A Methods for forming semiconductor wires and resulting devices
05/09/2007CN1961412A Semiconductor device
05/09/2007CN1961411A Method for forming a semiconductor device having a silicide layer
05/09/2007CN1961408A Method of forming sidewall spacers
05/09/2007CN1961244A 柔性静电激励器 Flexible electrostatic actuator
05/09/2007CN1960005A Fast restoring rectifier structure
05/09/2007CN1960004A 半导体结构及其制造方法 The semiconductor structure and a method of manufacturing
05/09/2007CN1960003A Semiconductor structure and method for manufacturing fin formula field effect transistor device
05/09/2007CN1960002A Field effect transistor and method for manufacturing the same
05/09/2007CN1960001A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/09/2007CN1959984A Thin film transistor, pixel structure, and method for repairing pixel structure
05/09/2007CN1959980A Conductive structure, manufacturing method for conductive structure, element substrate, and manufacturing method for element substrate
05/09/2007CN1959960A Fabrication method and structure for providing a recessed channel in a nonvolatile memory device
05/09/2007CN1959513A Array architecture of thin film transistor of bottom grid electrode, and fabricating method
05/09/2007CN1315197C Trench Schottky barrier rectifier and method of making same
05/09/2007CN1315196C Schotthy barrier transistor and manufacturing method thereof
05/09/2007CN1315195C Vertical conduction flip chip device with bump contacts on single surface
05/09/2007CN1315186C Method for manufacturing mini flip transistor
05/09/2007CN1315183C Wiring substrate, circuit substrate, electro-optical device and its mfg. method, and electronic device
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