| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/03/2007 | US20070096186 Vertical transistor device and fabrication method thereof |
| 05/03/2007 | US20070096185 Method of forming self-aligned inner gate recess channel transistor |
| 05/03/2007 | US20070096184 Semiconductor device and method for fabricating the same |
| 05/03/2007 | US20070096183 Semiconductor device and method for fabricating the same |
| 05/03/2007 | US20070096182 Transistor, meomory cell array and method of manufacturing a transistor |
| 05/03/2007 | US20070096181 Flexible memory module |
| 05/03/2007 | US20070096180 Semiconductor device and method for manufacturing the same |
| 05/03/2007 | US20070096178 Rear-Illuminated -Type Photodiode Array |
| 05/03/2007 | US20070096175 Complementary MIS device |
| 05/03/2007 | US20070096174 Semiconductor device having PN junction diode and method for manufacturing the same |
| 05/03/2007 | US20070096173 Semiconductor device and method for manufacturing semiconductor device |
| 05/03/2007 | US20070096172 Semiconductor component with a space-saving edge termination, and method for production of such component |
| 05/03/2007 | US20070096171 Semiconductor laser device that has the effect of phonon-assisted light amplification and method for manufacturing the same |
| 05/03/2007 | US20070096170 Low modulus spacers for channel stress enhancement |
| 05/03/2007 | US20070096169 Structure and method for thin film device with stranded conductor |
| 05/03/2007 | US20070096168 CMOS image sensor and method for manufacturing the same |
| 05/03/2007 | US20070096167 Trench IGBT with depletion stop layer |
| 05/03/2007 | US20070096166 Semiconductor device |
| 05/03/2007 | US20070096163 Transition metal alloys for use a gate electrode and device incorporating these alloys |
| 05/03/2007 | US20070096162 Phase change memory having multilayer thermal insulation |
| 05/03/2007 | US20070096161 Apparatus and method of image processing to avoid image saturation |
| 05/03/2007 | US20070096159 Solid-state imaging device and method of driving the same |
| 05/03/2007 | US20070096158 Pattern layout and layout data generation method |
| 05/03/2007 | US20070096157 Semiconductor device and manufacturing method of the same |
| 05/03/2007 | US20070096155 Cell structure for a semiconductor memory device and method of fabricating the same |
| 05/03/2007 | US20070096154 Standard cell |
| 05/03/2007 | US20070096152 High performance lateral bipolar transistor |
| 05/03/2007 | US20070096151 Bipolar transistor and method for fabricating the same |
| 05/03/2007 | US20070096146 III-V power field effect transistors |
| 05/03/2007 | US20070096143 Nitride semiconductor light emitting device and method for manufacturing the same |
| 05/03/2007 | US20070096142 Semiconductor device |
| 05/03/2007 | US20070096132 Coaxial LED lighting board |
| 05/03/2007 | US20070096124 Array substrate for a display panel, method of manufacturing the same, display panel having the same and liquid crystal display device having the same |
| 05/03/2007 | US20070096117 Nitride Semiconductor Wafer |
| 05/03/2007 | US20070096116 Semiconductor light emitting device and method of manufacturing same and semiconductor light emitting apparatus |
| 05/03/2007 | US20070096115 Nitride-based semiconductor light emitting diode |
| 05/03/2007 | US20070096114 Light emitting apparatus |
| 05/03/2007 | US20070096113 Led device |
| 05/03/2007 | US20070096112 Area light emitting device |
| 05/03/2007 | US20070096111 Light emitting display |
| 05/03/2007 | US20070096109 Semiconductor material, production method thereof and semiconductor device |
| 05/03/2007 | US20070096106 Semiconductor display device and method of manufacturing the same |
| 05/03/2007 | US20070096105 Methods of fabricating a semiconductor device using angled implantation |
| 05/03/2007 | US20070096104 Semiconductor device having a mis-type fet, and methods for manufacturing the same and forming a metal oxide film |
| 05/03/2007 | US20070096103 Semiconductor device, annealing method, annealing apparatus and display apparatus |
| 05/03/2007 | US20070096102 Liquid crystal display panel |
| 05/03/2007 | US20070096101 Method of manufacturing semiconductor light emitting device |
| 05/03/2007 | US20070096100 Thin film transistors |
| 05/03/2007 | US20070096099 Display device, device for driving the display device and method of driving the display device |
| 05/03/2007 | US20070096098 Conductive structure, manufacturing method for conductive structure, element substrate, and manufacturing method for element substrate |
| 05/03/2007 | US20070096097 Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same |
| 05/03/2007 | US20070096096 Electronic device and semiconductor device and method for manufacturing the same |
| 05/03/2007 | US20070096091 Layer structure and removing method thereof and mehod of testing semiconductor machine |
| 05/03/2007 | US20070096090 Forming a phase change memory with an ovonic threshold switch |
| 05/03/2007 | US20070096089 Organic semiconductor diode |
| 05/03/2007 | US20070096088 Organic transistor and display device |
| 05/03/2007 | US20070096087 Effect of the Plasmonic Dispersion Relation on the Transmission Properties of Subwavelength Holes |
| 05/03/2007 | US20070096086 Hole injection electrode |
| 05/03/2007 | US20070096085 Organic photovoltaic cells utilizing ultrathin sensitizing layer |
| 05/03/2007 | US20070096081 High-heat-resistant semiconductor device |
| 05/03/2007 | US20070096080 Rectifying diodes |
| 05/03/2007 | US20070096079 Field effect transistor and production process thereof |
| 05/03/2007 | US20070096077 Nitride semiconductor device |
| 05/03/2007 | US20070096076 Light emitting device and method of manufacturing light emitting device |
| 05/03/2007 | US20070096075 Field emission display device and method of operating the same |
| 05/03/2007 | US20070096073 Increasing phase change memory column landing margin |
| 05/03/2007 | US20070096072 Lateral phase change memory |
| 05/03/2007 | US20070096071 Multi-terminal phase change devices |
| 05/03/2007 | US20070095565 Wiring board |
| 05/03/2007 | DE69034227T2 EEprom-System mit Blocklöschung EEprom system with block erase |
| 05/03/2007 | DE19822763B4 Leistungshalbleitervorrichtung und Herstellungsverfahren einer Leistungshalbleitervorrichtung Power semiconductor device and manufacturing method of a power semiconductor device |
| 05/03/2007 | DE19740947B4 Halbleitereinrichtung und Herstellungsverfahren derselben A semiconductor device and manufacturing method thereof |
| 05/03/2007 | DE19653219B4 Substrat für ein Halbleiterbauelement, Halbleiterbauelement sowie Verfahren zum Herstellen eines Substrats für ein Halbleiterbauelement und zum Herstellen eines Halbleiterbauelements A substrate for a semiconductor device, semiconductor device, and method for producing a substrate for a semiconductor device and for manufacturing a semiconductor device |
| 05/03/2007 | DE112005001048T5 Halbleitervorrichtung mit einer Abstandsschicht, die mit langsamer diffundierenden Atomen dotiert ist als das Substrat A semiconductor device having a spacer layer, which is doped with atoms diffusing slower than the substrate |
| 05/03/2007 | DE102006050405A1 Silicon carbide schottky diode comprises Schottky metal barrier (comprising titanium) formed on silicon face of silicon carbide epitaxial body comprising hydrogen-silicon carbide |
| 05/03/2007 | DE102006001922B3 Lateral power transistor used as a MOSFET or an insulated gate bipolar transistor comprises a source zone, a drain zone, a drift zone and a body zone arranged in a semiconductor layer and an electrode layer |
| 05/03/2007 | DE102005052733B3 Vertical semiconductor element especially vertical IGBT, includes three semiconductor layers, with trench running through third semiconductor layer into second semiconductor layer |
| 05/03/2007 | DE102005052001A1 Semiconductor component with transistor has contact plug in dielectric constant layer that comprises copper and is separated from the dielectric constant layer by a barrier layer containing tungsten |
| 05/03/2007 | DE102005051417A1 Simulations- bzw. Layoutverfahren für vertikale Leistungstransistoren mit variierbarer Kanalweite und variierbarer Gate-Drain-Kapazität Simulation and layout method for vertical power transistors with variable channel width and diversifiable gate-drain capacitance |
| 05/03/2007 | DE102005046707B3 SiC-PN-Leistungsdiode SiC PN power diode |
| 05/03/2007 | DE102005002631B4 Mehrchippackung Multi-chip package |
| 05/03/2007 | DE102004033147B4 Planarer Doppel-Gate-Transistor und Verfahren zum Herstellen eines planaren Doppel-Gate-Transistors A planar double-gate transistor and method of manufacturing a planar double-gate transistor |
| 05/03/2007 | CA2626281A1 Controlled preparation of nanoparticle materials |
| 05/02/2007 | EP1780799A2 Diode |
| 05/02/2007 | EP1780776A1 Process for manufacturing a high-scale-integration mos device |
| 05/02/2007 | EP1780589A2 Semiconductor device and method for fabricating the same |
| 05/02/2007 | EP1780173A1 Nanometric mechanical oscillator, method of fabricating the same, and measurement apparatus using the same |
| 05/02/2007 | EP1779440A2 Metal-insulator varactor devices |
| 05/02/2007 | EP1779439A2 Lateral channel transistor |
| 05/02/2007 | EP1779438A1 Iii-v hemt devices |
| 05/02/2007 | EP1779437A1 Nitride-based transistors having laterally grown active region and methods of fabricating same |
| 05/02/2007 | EP1779436A2 Hybrid substrate technology for high-mobility planar and multiple-gate mosfets |
| 05/02/2007 | EP1779435A2 Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same |
| 05/02/2007 | EP1779430A2 Schottky diode structure to reduce capacitance and switching losses and method of making same |
| 05/02/2007 | EP1779426A2 Dram structures with source/drain pedestals and manufacturing method thereof |
| 05/02/2007 | EP1779413A2 Mems device and interposer and method for integrating mems device and interposer |
| 05/02/2007 | EP1779086A2 Shear test device |
| 05/02/2007 | EP1629525B1 A structure for a semiconductor arrangement and a method of manufacturing a semiconductor arrangement |
| 05/02/2007 | EP1366505A4 Direct detection of low-energy charged particles using metal oxide semiconductor circuitry |
| 05/02/2007 | EP1203749B1 Nanometer-order mechanical vibrator, production method thereof and measuring device using it |