Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2007
06/14/2007US20070131981 Patterning method and field effect transistors
06/14/2007US20070131980 Vacuum jacket for phase change memory element
06/14/2007US20070131979 Nonvolatile semiconductor memory device and method for manufacturing the same
06/14/2007US20070131978 Solid-state imaging device and method for manufacturing the same
06/14/2007US20070131976 Semiconductor element, method for manufacturing the same, liquid crystal display device, and method for manufacturing the same
06/14/2007US20070131975 Field effect transistor
06/14/2007US20070131974 Solid-state imaging device
06/14/2007US20070131973 Flash memory device and method of manufacturing the same
06/14/2007US20070131972 Semiconductor devices and methods of manufacture thereof
06/14/2007US20070131970 Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AIGaN/GaN HEMTs
06/14/2007US20070131966 Programmable memory cell in an integrated circuit chip
06/14/2007US20070131964 Semiconductor device and method for manufacturing the same
06/14/2007US20070131963 Thyristor Which Can Be Triggered Electrically And By Radiation, And Methods For Making Contact With It
06/14/2007US20070131962 Display panel and method for manufacturing the same
06/14/2007US20070131955 Optical transceiver module
06/14/2007US20070131948 Light emitting device
06/14/2007US20070131941 Light emitting device having high optical output efficiency
06/14/2007US20070131940 Color-mixing LED
06/14/2007US20070131939 Semiconductor laser and method for manufacturing the same
06/14/2007US20070131938 Merged and Isolated Power MESFET Devices
06/14/2007US20070131937 Display device and method of manufacturing thereof
06/14/2007US20070131936 Liquid crystal display device and fabricating method thereof
06/14/2007US20070131934 Polycrystalline silicon layer, flat panel display using the same, and method of fabricating the same
06/14/2007US20070131933 Polycrystalline silicon layer, flat panel display using the same, and methods of fabricating the same
06/14/2007US20070131928 Organic light-emitting display device
06/14/2007US20070131927 Thin film transistor and manufacturing method thereof
06/14/2007US20070131926 Organic thin film transistor and flat display device having the same
06/14/2007US20070131925 Organic light-emitting diode
06/14/2007US20070131922 Thin Film Fuse Phase Change Cell with Thermal Isolation Pad and Manufacturing Method
06/14/2007US20070131161 Design and fabrication of 6.1-a family semiconductor devices using semi-insulating alsb substrate
06/14/2007US20070130763 Method of fabricating electrical connection terminal of embedded chip
06/14/2007DE4245057B4 MOS semiconductor element e.g. for power MOSFET, IGBT, etc. - h
06/14/2007DE19908477B4 Halbleitervorrichtung Semiconductor device
06/14/2007DE19605669B4 Aktivmatrix-Anzeigevorrichtung An active matrix display device
06/14/2007DE112005001822T5 Verfahren zum Herstellen eines Halbleitersubstrats und Halbleitersubstrat A method for producing a semiconductor substrate and the semiconductor substrate
06/14/2007DE102006047541A1 Mikroelektronisches Bauelement und Verfahren zum Herstellen eines mikroelektronischen Bauelements Microelectronic device and method for manufacturing a microelectronic device
06/14/2007DE102006027656A1 Halbleiterelement, Fertigungsprozess für dieses, Halbleiterlaser und Fertigungsprozess für diesen Semiconductor element manufacturing process for this, semiconductor lasers and manufacturing process for these
06/14/2007DE102005060521A1 DMOS-Transistor mit optimierter Randstruktur DMOS transistor with optimized edge structure
06/14/2007DE102005058466A1 Semiconductor device manufacture, by diffusing material from diffusion reservoir into channel region to form conductive contact lead-out of shorter length than channel path
06/14/2007DE102005058435A1 Semiconductor component with channel stopper, has integrated channel stopper formed in edge zone of semiconductor component
06/14/2007DE10149691B4 Integrierte Halbleiterschaltung mit Varactorbauteilen A semiconductor integrated circuit with Varactorbauteilen
06/14/2007CA2632233A1 Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making
06/13/2007EP1796176A2 Field-effect transistor with via electrode and manufacturing method of the same
06/13/2007EP1796175A1 DMOS Transistor with optimised peripheral structure
06/13/2007EP1796174A1 Highly dielectric film, and utilizing the same, field-effect transistor and semiconductor integrated circuit apparatus, and process for producing the highly dielectric film
06/13/2007EP1796173A2 Hetero junction bipolar transistor and method of manufacturing the same
06/13/2007EP1796172A2 Nano-wire capacitor and circuit device therewith
06/13/2007EP1796162A2 Circuit element having capacitor and field effect transistor comprising nanowires
06/13/2007EP1796151A1 Low work function metal alloy
06/13/2007EP1796148A2 Silicon carbide semiconductor device and method for producing the same
06/13/2007EP1796102A2 Semiconductor memory device
06/13/2007EP1796087A2 Light scattering layer for electronic device comprising nano-particles, stacked structure comprising light scattering layer for thin film transistor, and methods of forming the same
06/13/2007EP1794807A2 Device for subtracting or adding charge in a charge-coupled device
06/13/2007EP1794806A2 METHOD OF COLLECTOR FORMATION IN BiCMOS TECHNOLOGY
06/13/2007EP1794803A2 Lateral dmos-transistor and method for the production thereof
06/13/2007EP1794802A2 Method of forming a solution processed device
06/13/2007EP1794801A2 Field effect transistor
06/13/2007EP1794800A2 Nanotube transistor and rectifying devices
06/13/2007EP1794799A1 Semiconductor device and method of forming a semiconductor device
06/13/2007EP1794795A1 Bi-directional esd protection circuit
06/13/2007EP1794791A1 Dram cells with vertical u-shaped transistors
06/13/2007EP1794786A2 Compressive sige <110> growth and structure of mosfet devices
06/13/2007EP1794779A2 Method for producing a strained layer on a substrate and layered structure
06/13/2007EP1751802A4 Liquid logic structures for electronic device applications
06/13/2007EP1723672B1 Semi-conductor element comprising an integrated Zener diode and method for the production thereof
06/13/2007EP1572897A4 Ordered biological nanostructures formed from chaperonin polypeptides
06/13/2007EP1214190A4 Silicon carbide epitaxial layers grown on substrates offcut towards 1100
06/13/2007EP1147551B8 Method of producing a top gate thin-film transistor
06/13/2007EP0981755B1 Acceleration sensor
06/13/2007EP0928021B1 Process for manufacturing semiconductor device
06/13/2007EP0885457A4 Method for making a circuit structure having a flip-mounted matrix of devices
06/13/2007CN1981382A Heterostructure field effect transistor
06/13/2007CN1981381A Nitride semiconductor device schottky electrode and manufacturing method thereof
06/13/2007CN1981344A Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer
06/13/2007CN1981197A 加速度传感器 Acceleration sensor
06/13/2007CN1980791A Perylene n-type semiconductors and related devices
06/13/2007CN1980059A Current limited bilateral MOSFET switch with reduced switch resistance and lower manufacturing cost
06/13/2007CN1979909A Light scattering layer, junction structure and methods of forming the same
06/13/2007CN1979900A Polycrystalline memory element and preparing method
06/13/2007CN1979899A Semiconductor device and method for manufacturing the same
06/13/2007CN1979898A Transistor type ferroelectric memory and method of manufacturing the same
06/13/2007CN1979897A DMOS transistor with optimized periphery structure
06/13/2007CN1979896A Semiconductor device and manufacturing method therefor
06/13/2007CN1979895A 半导体元件及静电放电保护元件 Semiconductor components and electrostatic discharge protection device
06/13/2007CN1979894A Method for making memory unit, memory unit and operation method
06/13/2007CN1979893A Transverse double-diffusing metal dioxide semiconductor transistor and making method
06/13/2007CN1979892A Fin-shaped field-effect transistor with concrete contact window and making method
06/13/2007CN1979891A High-power MOS tube and making method
06/13/2007CN1979890A 半导体装置及其制造方法 Semiconductor device and manufacturing method
06/13/2007CN1979889A Bipolar junction transistors (BJTs) and methods for forming same
06/13/2007CN1979888A Silicon carbide semiconductor device and method for producing the same
06/13/2007CN1979887A Self-standing gan single crystal substrate, method of making same, and method of making a nitride semiconductor device
06/13/2007CN1979879A Semiconductor device and method of fabricating the same
06/13/2007CN1979877A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
06/13/2007CN1979875A Methods to resolve hard-to-erase condition in charge trapping non-volatile memory
06/13/2007CN1979871A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
06/13/2007CN1979868A Semiconductor metal capacitor
06/13/2007CN1979867A 半导体金属电容 Semiconductor metal capacitors
06/13/2007CN1979864A Non-volatile memory and making method
06/13/2007CN1979862A Integrated circuit and method of manufacturing the same