Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2007
05/31/2007US20070120177 Electrochemical cell structure and method of fabrication
05/31/2007US20070120176 Eeprom
05/31/2007US20070120175 Eeprom
05/31/2007US20070120174 SRAM devices based on resonant tunneling
05/31/2007US20070120173 Non-volatile memory cell with high current output line
05/31/2007US20070120172 Logic compatible non-volatile memory cell
05/31/2007US20070120171 Nonvolatile memory cell with multiple floating gates and a connection region in the channel
05/31/2007US20070120170 Vertical semiconductor device
05/31/2007US20070120169 Trench capacitor
05/31/2007US20070120168 Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods
05/31/2007US20070120167 Large-area nanoenabled macroelectronic substrates and uses therefor
05/31/2007US20070120166 Nonvolatile semiconductor memory device
05/31/2007US20070120165 Semiconductor device with ferroelectric capacitor and fabrication method thereof
05/31/2007US20070120164 Film forming method and oxide thin film element
05/31/2007US20070120160 Semiconductor Device Having Enhanced Photo Sensitivity and Method for Manufacture Thereof
05/31/2007US20070120157 Organic light emitting display device
05/31/2007US20070120156 Enhanced Segmented Channel MOS Transistor with Multi Layer Regions
05/31/2007US20070120155 Colors only process to reduce package yield loss
05/31/2007US20070120154 Finfet structure with multiply stressed gate electrode
05/31/2007US20070120152 Gate-in-panel type liquid crystal display device and method of fabricating the same
05/31/2007US20070120151 Non-volatile memory
05/31/2007US20070120150 Semiconductor component arrangement and method for fabricating it
05/31/2007US20070120148 Hetero-junction bipolar transistor
05/31/2007US20070120147 Gallium nitride material transistors and methods associated with the same
05/31/2007US20070120146 Differential input/output device including electro static discharge (esd) protection circuit
05/31/2007US20070120145 Gate turn-off thyristor
05/31/2007US20070120144 Semiconductor device having group III nitride buffer layer and growth layers
05/31/2007US20070120143 Organic light emitting diode display and method for manufacturing the same
05/31/2007US20070120135 Coated led with improved efficiency
05/31/2007US20070120131 Semiconductor device
05/31/2007US20070120128 Semiconductor memory device
05/31/2007US20070120127 Semiconductor device and semiconductor device production system
05/31/2007US20070120126 Organic light emitting display device and method for manufacturing the same
05/31/2007US20070120124 Resistance-switching oxide thin film devices
05/31/2007US20070120123 Photodetector using nanoparticles
05/31/2007US20070120121 Compound for molecular electronic device having thiol anchoring group, method of synthesizing the compound, and molecular electronic device having molecular active layer obtained from the compound
05/31/2007US20070120119 Light emitting device
05/31/2007US20070120118 Light-emitting device and electronic apparatus
05/31/2007US20070120117 Semiconductor element and method of manufacturing the same
05/31/2007US20070120116 Organic semiconductor thin film transistor and method of fabricating the same
05/31/2007US20070120115 Organic light-emitting element, method of manufacturing organic light-emitting element, light-emitting device, and electronic apparatus
05/31/2007US20070120114 Composite material with conductive structures of random size, shape, orientation, or location
05/31/2007US20070120111 Organic thin film transistor
05/31/2007US20070120110 Thin-Film Transistors Based on Tunneling Structures and Applications
05/31/2007US20070120109 Surface light-source device using light-emitting elements
05/31/2007US20070120108 Light emitting device
05/31/2007US20070120106 Phase-change memory device and method of manufacturing same
05/31/2007US20070120105 Lateral phase change memory with spacer electrodes and method of manufacturing the same
05/31/2007US20070120104 Phase change material and non-volatile memory device using the same
05/31/2007US20070120103 Switch circuit and method of switching radio frequency signals
05/31/2007DE19521469B4 Hochspannungstransistorstruktur für eine Halbleitervorrichtung sowie Verfahren zu deren Herstellung High-voltage transistor structure for a semiconductor device as well as processes for their preparation
05/31/2007DE112005000775T5 Halbleiter-auf-Isolator-Substrat und daraus hergestellte Bauelemente Semiconductor-on-insulator substrate and derived components
05/31/2007DE102006056995A1 Thin film transistor and diode array for detector panel for an imaging system has contact junctions between diode and metal layers and between diode layer and substrate
05/31/2007DE102006055334A1 Feldeffekttransistor und Verfahren zu dessen Herstellung Field effect transistor and method of producing the
05/31/2007DE102006053145A1 Halbleitervorrichtung mit Trennungsbereich Semiconductor device separation region
05/31/2007DE102006051285A1 MOS-Transistor mit einem Driftbereich und Verfahren zur Herstellung desselben Of the same MOS transistor having a drift region and methods for preparing
05/31/2007DE102005057401A1 Semiconductor component and production process for power uses has semiconductor element with chip island having two contact strips in separate planes above the semiconductor element
05/31/2007DE102005056908A1 Integrated circuit and production process has Shockley diode or thyristor especially for electrostatic discharge, ESD, protection with inner region screened by tub implantation
05/31/2007DE102005054672A1 Hochvolt-Transistor mit niedriger Threshold-Spannung und einen solchen Hochvolt-Transistor umfassendes Bauelement High-voltage transistor with low threshold voltage and high-voltage transistor such a comprehensive component
05/31/2007DE102005053487A1 Power insulated gate bipolar transistor includes semiconductor body having emitter zone with lower emitter efficiency in region corresponding to second cell array section than in region corresponding to first cell array section
05/31/2007DE102005047104B3 Halbleiterbauelement mit miteinander verschalteten Zellstreifen A semiconductor device comprising interconnected cell strips
05/31/2007DE102005047102B3 Halbleiterbauelement mit pn-Übergang Semiconductor component with pn junction
05/31/2007DE102005041108B3 Verfahren zur Herstellung eines Trench-Transistors und Trench-Transistor Process for the preparation of a trench transistor and trench transistor
05/31/2007DE102005037573B4 Thyristor mit Freiwerdeschutz in Form eines Thyristorsystems und Verfahren zur Herstellung des Thyristorsystems Thyristor with free Become protection in the form of a Thyristorsystems and method for producing the Thyristorsystems
05/31/2007CA2629509A1 Multifunctional nanostructure and method
05/30/2007EP1791183A1 Varactor element and low distortion varactor circuit arrangement
05/30/2007EP1791173A1 Process for manufacturing a MOSFET and corresponding MOSFET
05/30/2007EP1790963A2 Mechanical deformation amount sensor
05/30/2007EP1790014A2 Vertical semiconductor devices and methods of manufacturing such devices
05/30/2007EP1790013A1 Power semiconductor device
05/30/2007EP1790012A1 Improved strained-silicon cmos device and method
05/30/2007EP1790011A1 Semiconductor radiation detector with a modified internal gate structure
05/30/2007EP1790002A1 Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
05/30/2007EP1723668B1 Method of fabricating a strained finfet channel
05/30/2007EP1639648A4 Integrated circuit having pairs of parallel complementary finfets
05/30/2007EP1380053B1 Nanoelectronic devices and circuits
05/30/2007EP1287549A4 An apparatus and a method for forming a pattern using a crystal structure of material
05/30/2007EP1220320B1 Sigec semiconductor crystal and production method thereof
05/30/2007CN1973385A Functional molecule apparatus
05/30/2007CN1973378A Tunnel junctions for long-wavelength VCSELs
05/30/2007CN1973377A High frequency transistor layout for low source drain capacitance
05/30/2007CN1973376A Ldmos晶体管 Ldmos transistor
05/30/2007CN1973375A Method of separating layers of material using laser beam
05/30/2007CN1973374A Semiconductor device with multiple semiconductor layers
05/30/2007CN1973332A Organic electronic circuit with functional interlayer, and method for making the same
05/30/2007CN1971947A Flat capacitor structure and flat capacitor, grid and resistance forming technique method
05/30/2007CN1971946A Field effect transistor and method of manufacturing the same
05/30/2007CN1971945A Fet apparatus and its manufacturing method
05/30/2007CN1971944A A MOS FET tube and its manufacturing method
05/30/2007CN1971943A Self-supporting SiC based GaN apparatus and its manufacturing method
05/30/2007CN1971942A Low-inductance gated thyristor and its power semiconductor assembly
05/30/2007CN1971941A A MOS FET tube and its manufacturing method
05/30/2007CN1971939A Display device and manufacturing method of display device
05/30/2007CN1971932A 半导体存储装置 The semiconductor memory device
05/30/2007CN1971918A Nonvolatile semicondutor storage device and manufacturing method thereof
05/30/2007CN1971917A Non-volatile memory devices having floating gates and related methods of forming the same
05/30/2007CN1971885A Semiconductor element and method for manufacturing the same
05/30/2007CN1971881A Ic and its manufacturing method
05/30/2007CN1971879A High-voltage metal oxide semiconductor element
05/30/2007CN1971851A Semiconductor device, method for manufacturing the same and method for evaluating the same