Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2007
05/17/2007US20070108442 Display device and method for manufacturing the same
05/17/2007US20070108441 Switching device
05/17/2007US20070108440 Emissive device and electronic apparatus
05/17/2007US20070108439 Nanotube based multi-level memory structure
05/17/2007US20070108437 Method of fabrication of high temperature superconductors based on new mechanism of electron-electron interaction
05/17/2007US20070108436 Semiconductor Light-Emitting Device and Surface Light Source Using the Same
05/17/2007US20070108435 Method of making nanowires
05/17/2007US20070108434 Quantum dot based pressure switch
05/17/2007US20070108429 Pipe shaped phase change memory
05/16/2007EP1786037A2 Semiconductor device and method for fabricating the same
05/16/2007EP1786031A1 Vertical-gate mos transistor for high voltage applications with variable gate oxide thickness
05/16/2007EP1786030A1 Silicon oxide film forming method, semiconductor device manufacturing method and computer storage medium
05/16/2007EP1785459A1 Siliceous film with smaller flat band shift and method for producing same
05/16/2007EP1784869A1 Metal source power transistor and method of manufacture
05/16/2007EP1784868A1 Lateral field effect transistor and its fabrication comprisng a spacer layer above and below the channel layer
05/16/2007EP1784859A2 Semiconductor transistor having structural elements of differing materials and method of formation
05/16/2007EP1784858A2 Dram transistor with a gate buried in the substrate and method of forming thereof
05/16/2007DE202007001431U1 Halbleiteranordnung und Leistungshalbleiterbauelement Semiconductor device and power semiconductor component
05/16/2007CN1965412A Complimentary nitride transistors vertical and common drain
05/16/2007CN1965408A Memory device and manufacturing method of the same
05/16/2007CN1965403A Integrated circuit metal silicide method
05/16/2007CN1965400A Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth
05/16/2007CN1965399A High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof
05/16/2007CN1965398A Heterojunction bipolar transistor
05/16/2007CN1965391A Semiconductor device manufacturing method and manufacturing apparatus
05/16/2007CN1964539A Method for impedance matching of wireless communication device using pin diode and impedance matching device thereof
05/16/2007CN1964077A Capacitor and manufacturing method thereof, semiconductor device containing the capacitor
05/16/2007CN1964076A Gate structure, semiconductor memory device having the gate structure and methods of fabricating the same
05/16/2007CN1964075A An erasable metal-insulator-silicon capacitor structure with high density
05/16/2007CN1964074A Complementary carbon nanotube and method for forming the same
05/16/2007CN1964073A A MOS resistor and its manufacture method
05/16/2007CN1964072A An asymmetric Schottky barrier MOS transistor and its manufacture method
05/16/2007CN1964071A Ldmos with independently biased source
05/16/2007CN1964070A A vertical dual diffused MOS power device protected by polysilicon ESD structure
05/16/2007CN1964069A A vertical dual diffused MOS power device protected by polysilicon/crystalline silicon ESD structure
05/16/2007CN1964068A A power semiconductor structure capable of reducing conduction resistance and its manufacture method
05/16/2007CN1964067A Thin film transistor substrate for display
05/16/2007CN1964066A Gate electrode and mos transistor including gate and method of fabricating the same
05/16/2007CN1964040A 传感器块 Sensor block
05/16/2007CN1964005A A method to manufacture thin-film transistor
05/16/2007CN1964004A A method to improve isolation characteristic of high pressure NMOS part
05/16/2007CN1963998A Semiconductor device, substrate of the same, and manufacturing method of the same, and liquid crystal display and manufacturing method of the same
05/16/2007CN1963647A 液晶显示面板 The liquid crystal display panel
05/16/2007CN1963616A Display and its manufacturing method
05/16/2007CN1963614A Array substrate for liquid crystal display device and method of fabricating the same
05/16/2007CN1316633C Polycrystalline SiTFT of multi-grid double-channel structure
05/16/2007CN1316632C Thin film transistor assembly with substrate contact
05/16/2007CN1316631C Semiconductor device and its producing method
05/16/2007CN1316630C Semiconductor device and method for manufacturing the same
05/16/2007CN1316629C Semiconductor device and its mfg. method
05/16/2007CN1316628C 半导体器件 Semiconductor devices
05/16/2007CN1316625C Non-volatile memory and method of forming thereof
05/16/2007CN1316623C Nonvolatile semiconductor memory device
05/16/2007CN1316621C Complementary metal oxide semiconductor phase reverser
05/16/2007CN1316620C 半导体芯片 Semiconductor chip
05/16/2007CN1316615C Integrated circuit and method for arranging integrated circuit electric bus grid
05/16/2007CN1316614C Semiconductor devices
05/16/2007CN1316609C Semiconductor device and its producing method
05/16/2007CN1316599C Method for mfg. semiconductor IC device
05/16/2007CN1316593C Method of forming metal line in semiconductor device
05/16/2007CN1316588C Method for fabricating semiconductor device with recessed channel region
05/16/2007CN1316586C Method for forming a layered semiconductor technology structure and corresponding layered semiconductor technology structure
05/16/2007CN1316577C Chip scale surface mounted device and its process of manufacture
05/16/2007CN1316576C Semiconductor device and method for making same
05/16/2007CN1316574C ONO dielectric substance and manufacturing method thereof
05/16/2007CN1316569C Low-temperature post-dopant activation process
05/16/2007CN1316568C Method for mfg. semiconductor device
05/16/2007CN1316565C Semiconductor film and its manufacturing method and semiconductor device and display device using it
05/16/2007CN1316561C Method and apparatus for fabricating semiconductor device
05/16/2007CN1316543C Cathode ray tube
05/16/2007CN1316307C Dispenser system for liquid crystal display panel, dispensing method using the same, and method of fabricating liquid crystal display panel using dispenser system and dispensing method
05/16/2007CN1316299C Transmissive liquid crystal display device having a cholesteric liquid crystal color filter
05/15/2007US7218555 Imaging cell that has a long integration period and method of operating the imaging cell
05/15/2007US7218370 Display device
05/15/2007US7218369 Liquid crystal display with notch formed in pixel electrode
05/15/2007US7218361 Semiconductor display device and manufacturing method thereof
05/15/2007US7218008 Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument
05/15/2007US7218007 Underfill material to reduce ball limiting metallurgy delamination and cracking potential in semiconductor devices
05/15/2007US7218006 Multi-chip stack package
05/15/2007US7218005 Compact semiconductor device capable of mounting a plurality of semiconductor chips with high density and method of manufacturing the same
05/15/2007US7218004 Fusing nanowires using in situ crystal growth
05/15/2007US7218003 Methods for wafer-level packaging of microelectronic devices and microelectronic devices formed by such methods
05/15/2007US7218001 Reduced footprint packaged microelectronic components and methods for manufacturing such microelectronic components
05/15/2007US7217999 Multilayer interconnection board, semiconductor device having the same, and method of forming the same as well as method of mounting the semiconductor chip on the interconnection board
05/15/2007US7217992 Semiconductor device, semiconductor wafer, semiconductor module, and a method of manufacturing semiconductor device
05/15/2007US7217988 Bipolar transistor with isolation and direct contacts
05/15/2007US7217987 Semiconductor device and manufacturing the same
05/15/2007US7217986 Method for modifying the impedance of semiconductor devices using a focused heating source
05/15/2007US7217985 Semiconductor device including a transistor having low threshold voltage and high breakdown voltage
05/15/2007US7217982 Photodiode having voltage tunable spectral response
05/15/2007US7217980 CMOS silicon-control-rectifier (SCR) structure for electrostatic discharge (ESD) protection
05/15/2007US7217979 Semiconductor apparatus including a radiator for diffusing the heat generated therein
05/15/2007US7217976 Low temperature process and structures for polycide power MOSFET with ultra-shallow source
05/15/2007US7217975 Lateral type semiconductor device
05/15/2007US7217974 Output prediction logic circuits with ultra-thin vertical transistors and methods of formation
05/15/2007US7217973 Semiconductor device including sidewall floating gates
05/15/2007US7217972 Semiconductor device
05/15/2007US7217971 Miniaturized semiconductor device with improved dielectric properties
05/15/2007US7217970 Devices containing platinum-iridium films and methods of preparing such films and devices
05/15/2007US7217969 Flip FERAM cell and method to form same