Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2007
05/23/2007EP1203408B1 Bi-directional semiconductor component
05/23/2007CN1969392A Non-volatile memory with erase gate on isolation zones
05/23/2007CN1969391A Semiconductor on insulator semiconductor device and method of manufacture
05/23/2007CN1969390A 场效应晶体管及其制造方法 The field effect transistor and manufacturing method thereof
05/23/2007CN1969389A High-voltage device structure
05/23/2007CN1969388A Vertical gallium nitride semiconductor device and epitaxial substrate
05/23/2007CN1969380A Group III nitride semiconductor device and epitaxial substrate
05/23/2007CN1969377A Laser irradiating device and laser irradiating method
05/23/2007CN1969373A Method of manufacturing a strained semiconductor layer, method of manufacturing a semiconductor device and semiconductor substrate suitable for use in such a method
05/23/2007CN1969369A Light emitting diode component
05/23/2007CN1968017A Driver for voltage driven type switching element
05/23/2007CN1967880A Mnos memory devices and methods for operating an mnos memory devices
05/23/2007CN1967879A Operation mehtod of single-poly non-volatile memory device
05/23/2007CN1967878A Operation mehtod of single-poly non-volatile memory device
05/23/2007CN1967877A Thin film transistor and method of fabricating the same
05/23/2007CN1967876A Thin film transistor and method of manufacturing the same
05/23/2007CN1967875A 半导体器件 Semiconductor devices
05/23/2007CN1967874A Field effect transistor and its forming method
05/23/2007CN1967873A 半导体器件 Semiconductor devices
05/23/2007CN1967872A Semiconductor device and method for manufacturing the same
05/23/2007CN1967871A Semiconductor device and its manufacturing method
05/23/2007CN1967870A Semiconductor structure and its forming method, transverse diffusion p-type mos device
05/23/2007CN1967869A Semiconductor device and its manufacturing method
05/23/2007CN1967868A Semiconductor device and method of manufacturing the same
05/23/2007CN1967850A 半导体装置 Semiconductor device
05/23/2007CN1967840A Self-correcting circuit for mismatch capacity
05/23/2007CN1967812A Quasi self-aligned source/drain finfet process
05/23/2007CN1967795A Nanocrystal silicon quantum dot memory device
05/23/2007CN1967794A Low hydrogen concentration charge-trapping layer structures for non-volatile memory and methods of forming the same
05/23/2007CN1967793A Structure and method of field effect transistors
05/23/2007CN1967792A Structure and method of fabricating finfet with buried channel
05/23/2007CN1967787A Method for forming underlying insulation film
05/23/2007CN1967779A Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor using the same
05/23/2007CN1967381A Light shield improving joining effect and exposal method used the same
05/23/2007CN1967362A Storage cell, pixel structure and manufacturing method of storage cell
05/23/2007CN1967359A Multi-field vertical assigned LCD panel
05/23/2007CN1967358A Light emitting display induced by organic electricity with light emitting on top and bottom
05/23/2007CN1317772C Semiconductor device and method for fabricating the same
05/23/2007CN1317771C Insulating grid type semiconductor device
05/23/2007CN1317769C Semiconductor storage device and its producing method
05/23/2007CN1317768C Nonvolatile memory device utilizing a vertical nanotube
05/23/2007CN1317766C Semiconductor memory device and semiconductor device
05/23/2007CN1317744C Method for fabricating semiconductor integrated circuit device
05/23/2007CN1317743C Method for manufacturing semiconductor device
05/23/2007CN1317735C Buffer layer capable of promoting electron mobility raising and thin film transistor containing the buffer layer
05/23/2007CN1317596C Picture element structure and manufacturing method thereof
05/23/2007CN1317595C 薄膜晶体管阵列基板及其修补方法 The thin film transistor array substrate and repairing method
05/23/2007CN1317594C Interconnector structure and its manufacturing method
05/22/2007USRE39640 Conductive isostructural compounds
05/22/2007US7222060 Circuit simulation apparatus incorporating diffusion length dependence of transistors and method for creating transistor model
05/22/2007US7221817 Beam switch structures and methods
05/22/2007US7221614 Stacked semiconductor memory device
05/22/2007US7221597 Ballistic direct injection flash memory cell on strained silicon structures
05/22/2007US7221596 pFET nonvolatile memory
05/22/2007US7221586 Memory utilizing oxide nanolaminates
05/22/2007US7221584 MRAM cell having shared configuration
05/22/2007US7221423 Thin film panel having particular pixel electrodes overlapping particular data line portions
05/22/2007US7221332 3D stereo OLED display
05/22/2007US7221138 Method and apparatus for measuring charge pump output current
05/22/2007US7221096 Active matrix organic light emitting display panel
05/22/2007US7221059 Wafer level semiconductor component having thinned, encapsulated dice and polymer dam
05/22/2007US7221058 Substrate for mounting semiconductor chip, mounting structure of semiconductor chip, and mounting method of semiconductor chip
05/22/2007US7221056 Semiconductor integrated circuit device and manufacturing method thereof
05/22/2007US7221055 System and method for die attach using a backside heat spreader
05/22/2007US7221054 Bump structure
05/22/2007US7221053 Integrated device and electronic system
05/22/2007US7221051 Semiconductor device, module for optical devices, and manufacturing method of semiconductor device
05/22/2007US7221047 Pressure-contact type semiconductor device
05/22/2007US7221043 Integrated circuit carrier with recesses
05/22/2007US7221039 Thin film transistor (TFT) device structure employing silicon rich silicon oxide passivation layer
05/22/2007US7221038 Method of fabricating substrates and substrates obtained by this method
05/22/2007US7221037 Method of manufacturing group III nitride substrate and semiconductor device
05/22/2007US7221036 BJT with ESD self protection
05/22/2007US7221035 Semiconductor structure avoiding poly stringer formation
05/22/2007US7221034 Semiconductor structure including vias
05/22/2007US7221033 Anti-stiction technique for thin film and wafer-bonded encapsulated microelectromechanical systems
05/22/2007US7221032 Semiconductor device including FinFET having vertical double gate structure and method of fabricating the same
05/22/2007US7221030 Semiconductor device
05/22/2007US7221029 Semiconductor device and semiconductor memory using the same
05/22/2007US7221028 High voltage transistor and method of manufacturing the same
05/22/2007US7221026 Computer systems containing resistors which include doped silicon/germanium
05/22/2007US7221025 Semiconductor on insulator substrate and devices formed therefrom
05/22/2007US7221023 Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same
05/22/2007US7221021 Method of forming high voltage devices with retrograde well
05/22/2007US7221020 Method to construct a self aligned recess gate for DRAM access devices
05/22/2007US7221019 Short-channel Schottky-barrier MOSFET device and manufacturing method
05/22/2007US7221018 NROM flash memory with a high-permittivity gate dielectric
05/22/2007US7221017 Memory utilizing oxide-conductor nanolaminates
05/22/2007US7221016 Semiconductor device with memory function and method of manufacture
05/22/2007US7221015 Semiconductor device and method of manufacturing the same
05/22/2007US7221014 DRAM devices having an increased density layout
05/22/2007US7221013 Semiconductor device
05/22/2007US7221011 High-voltage vertical transistor with a multi-gradient drain doping profile
05/22/2007US7221010 Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
05/22/2007US7221009 Semiconductor device
05/22/2007US7221008 Bitline direction shielding to avoid cross coupling between adjacent cells for NAND flash memory
05/22/2007US7221005 Negative resistance field-effect device
05/22/2007US7221004 Semiconductor module
05/22/2007US7221002 Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element
05/22/2007US7221000 Reverse polarization light emitting region for a semiconductor light emitting device