Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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07/04/2012 | CN102543727A Silicon-germanium heterojunction bipolar transistor (SiGe HBT) structure, pseudo buried layer structure and manufacturing method for SiGe HBT |
07/04/2012 | CN102543726A Manufacture method for high-voltage silicon germanium heterojunction bipolar transistor |
07/04/2012 | CN102543725A Method for manufacturing high-speed silicon-germanium heterojunction bipolar transistor (SiGe HBT) |
07/04/2012 | CN102543724A Process for manufacturing Zener diode at low temperature |
07/04/2012 | CN102543723A Method for manufacturing grid controlled diode semiconductor device |
07/04/2012 | CN102543722A High-voltage transient voltage suppressor chip and production process |
07/04/2012 | CN102543721A Table-board manufacture technology for lead-free diode |
07/04/2012 | CN102543720A Silicon two-way transient voltage suppression diode and manufacture method thereof |
07/04/2012 | CN102543719A Manufacture method of uniaxial strain silicon germanium on insulator (SGOI) wafer on aluminum nitride (AIN) embedded insulating barrier based on mechanical bending table |
07/04/2012 | CN102543718A Method for decreasing warp and bow of silicon carbide wafer |
07/04/2012 | CN102543717A Metal layer structure of semiconductor device as well as manufacturing method of metal layer structure and semiconductor device using metal layer structure |
07/04/2012 | CN102543716A Method for forming salicide block layer |
07/04/2012 | CN102543715A Production method of nitrogen-free dielectric antireflective film |
07/04/2012 | CN102543714A Method for improving uniformity of chemical-mechanical planarization process at top of opened polycrystal gratings |
07/04/2012 | CN102543713A Method for etching oxide silicon grid compensating isolation region |
07/04/2012 | CN102543712A Novel gate graph dimension shrinkage method |
07/04/2012 | CN102543711A Method for generating porous silicon by eroding surface of silicon wafer for solar battery |
07/04/2012 | CN102543710A Liquid processing apparatus |
07/04/2012 | CN102543709A Method for the simultaneous material-removing processing of both sides of at least three semiconductor wafers |
07/04/2012 | CN102543708A Wafer splitting apparatus and wafer splitting process |
07/04/2012 | CN102543707A Formation of a channel semiconductor alloy by forming a hard mask layer stack and applying a plasma-based mask patterning process |
07/04/2012 | CN102543706A Integration process for different polycrystalline silicon gate electrode thicknesses |
07/04/2012 | CN102543705A Polycrystalline silicon gate electrode integration process for high-pressure devices and low-pressure devices |
07/04/2012 | CN102543704A Forming method of grid oxide layer |
07/04/2012 | CN102543703A Manufacturing method of nanocrystalline flash memory grid |
07/04/2012 | CN102543702A Formation method of metal gate |
07/04/2012 | CN102543701A Method for preparing metal silicide |
07/04/2012 | CN102543700A Method for forming aluminum metal gate |
07/04/2012 | CN102543699A Method for forming metal gate |
07/04/2012 | CN102543698A Manufacturing method of metal gate electrode |
07/04/2012 | CN102543697A Method for manufacturing tunnel oxide layer window in electrically erasable programmable read only memory (EEPROM) |
07/04/2012 | CN102543696A Manufacture method for semiconductor device |
07/04/2012 | CN102543695A Preparation method of self-aligned low-resistance gate in RFLDMOS (radio frequency laterally diffused metal oxide semiconductor) device |
07/04/2012 | CN102543694A High-temperature drive-in process of Bipolar-CMOS-DMOS device |
07/04/2012 | CN102543693A Method for preparing germanium-based pseudo gallium arsenide (GaAs) substrate |
07/04/2012 | CN102543692A Method for forming nitride film |
07/04/2012 | CN102543691A Preparation method of silicon-on-insulator (SOI) material |
07/04/2012 | CN102543690A Method for optimizing metal half contact structure by level de-pinning on local surface of N-type semi-conductor |
07/04/2012 | CN102543689A Substrate processing apparatus, method of manufacturing substrate, and method of manufacturing semiconductor device |
07/04/2012 | CN102543688A Spacer double patterning for lithography operations |
07/04/2012 | CN102543687A Etching method and etching device for mask layer and etching method for interlayer dielectric layer |
07/04/2012 | CN102543686A Process for photoetching polyimide on semiconductor substrate |
07/04/2012 | CN102543685A Substrate processing device and method |
07/04/2012 | CN102543684A Graphic structure design integrated with measurement of line width and alignment precision |
07/04/2012 | CN102543683A Reprocessing method for photoetching process |
07/04/2012 | CN102543682A Method for forming multistage deep step |
07/04/2012 | CN102543681A Method for removing gold-containing metal from back of chip |
07/04/2012 | CN102543680A Method for reducing cracking phenomena of double front metal dielectric substance layers |
07/04/2012 | CN102543679A Method for cleaning a semiconductor wafer composed of silicon directly after a process of polishing of the semiconductor wafer |
07/04/2012 | CN102543678A Method for cleaving a substrate |
07/04/2012 | CN102543677A Manufacturing process of cellular silicon wafer |
07/04/2012 | CN102543676A Method of forming patterns of semiconductor device |
07/04/2012 | CN102543675A Method for processing glass substrate |
07/04/2012 | CN102543674A Method for removing residue from metal surface |
07/04/2012 | CN102543673A Wafer structure and manufacturing method of alignment mark of same |
07/04/2012 | CN102543672A Method for removing natural silicon oxide layer and method for forming self-aligned silicide |
07/04/2012 | CN102543671A Manufacture method for semiconductor wafer |
07/04/2012 | CN102543670A Planarization method for PMD (Pre-Metal Dielectric) layer |
07/04/2012 | CN102543669A Semiconductor device manufacturing method |
07/04/2012 | CN102543668A Preparation method of suspension fin |
07/04/2012 | CN102543667A Forming method of graph of aligned layer on silicon chip |
07/04/2012 | CN102543666A Polycrystalline silicon processing method |
07/04/2012 | CN102543665A Improved rapid thinning method of gallium arsenide substrate |
07/04/2012 | CN102543664A Diode lead forming device |
07/04/2012 | CN102543663A Automatic lead molding device |
07/04/2012 | CN102543662A Hot disc and silicon chip heating system applying same |
07/04/2012 | CN102543661A Wafer manufacturing method |
07/04/2012 | CN102543644A Upper electrode for reaction cavity of dry etching equipment |
07/04/2012 | CN102543214A Method for on-line monitoring of quality of ONO (Oxide-Nitride-Oxide) film in SONOS (Silicon Oxide Nitride Oxide Semiconductor) memory process |
07/04/2012 | CN102541398A Method, device and system for adjusting process formula step sequence |
07/04/2012 | CN102541102A Processing apparatus |
07/04/2012 | CN102541090A Precise positioning control system for platform movement |
07/04/2012 | CN102540911A Control device and control method for equipment |
07/04/2012 | CN102540776A Stripping liquid for removing residual photoresist in semiconductor technology |
07/04/2012 | CN102540775A Method for removing photoresist of silicide protection layer |
07/04/2012 | CN102540770A Developing method, developing device and coating developing processing system having the developing device |
07/04/2012 | CN102540755A Exposure apparatus, exposure method, and method of making panel substrate for display |
07/04/2012 | CN102540749A Photoetching method |
07/04/2012 | CN102540732A Method for judging one-time photoetching result during semiconductor production |
07/04/2012 | CN102540726A Orthotype photosensitive resin composition, hard coating film and forming method thereof, interlayer insulated film, and display device |
07/04/2012 | CN102540724A Positive photosensitive resin composition, a photosensitive resin layer prepared by using the same, and a semiconductor device including the photosensitive resin layer |
07/04/2012 | CN102540710A Resist pattern improving material, method for forming resist pattern, and method for producing semiconductor device |
07/04/2012 | CN102540706A Method for extending effective use time of photoresist |
07/04/2012 | CN102540605A Thin-film transistor array substrate, method of manufacturing the same, and liquid crystal display device |
07/04/2012 | CN102540604A Method for fabricating array substrate for FFS mode liquid crystal display device |
07/04/2012 | CN102540602A Display device and method of manufacturing the same |
07/04/2012 | CN102540600A 液晶显示装置及其制造方法 The liquid crystal display device and manufacturing method |
07/04/2012 | CN102540596A Liquid crystal display and manufacturing method thereof |
07/04/2012 | CN102540595A Array substrate, manufacturing method thereof and liquid crystal panel |
07/04/2012 | CN102540536A Flat display and method of fabricating same |
07/04/2012 | CN102540534A Electronic paper display substrate, manufacturing method thereof and electronic paper display |
07/04/2012 | CN102540524A Method for preventing electrostatic breakdown, manufacturing method of array substrate and display back panel |
07/04/2012 | CN102540415A Projection lithographic objective |
07/04/2012 | CN102539448A Development residue detecting method |
07/04/2012 | CN102539324A Detection device used for testing welding pulling force of patch type diode |
07/04/2012 | CN102537373A Valve for vacuum process |
07/04/2012 | CN102534768A Method for preparing silicon-based gallium arsenide material |
07/04/2012 | CN102534615A Film-forming method for forming silicon oxide film on tungsten film or tungsten oxide film |
07/04/2012 | CN102534550A Deposition method for silicon dioxide thin film of grid sidewall |
07/04/2012 | CN102534548A Aminovinylsilane for CVD and ALD SIO2 films |