Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
---|
06/13/1989 | US4839523 Ion implantation apparatus for semiconductor manufacture |
06/13/1989 | US4839520 Production of pulsed electron beams |
06/13/1989 | US4839312 Glow discharge decomposition onto matrix |
06/13/1989 | US4839311 Etch back detection |
06/13/1989 | US4839310 High mobility transistor with opposed-gates |
06/13/1989 | US4839309 Fabrication of high-speed dielectrically isolated devices utilizing buried silicide outdiffusion |
06/13/1989 | US4839306 Forming oxide by radio frequency bias sputtering |
06/13/1989 | US4839305 Doping, masking, diffusion; silicon nitride spacers |
06/13/1989 | US4839304 Multilayer-dielectric substrate, electrode, protective film, fillers, and electroconductive layer |
06/13/1989 | US4839303 Multilayer; substrate, doped collector, contactors |
06/13/1989 | US4839302 Method for fabricating bipolar semiconductor device |
06/13/1989 | US4839301 Blanket CMOS channel stop implant employing a combination of n-channel and p-channel punch-through implants |
06/13/1989 | US4839300 Method of manufacturing semiconductor device having trapezoidal shaped substrate sections |
06/13/1989 | US4839219 Heat, chemical resistant |
06/13/1989 | US4839196 Photochemical film-forming method |
06/13/1989 | US4839145 Substrates mounted on rotatable susceptor; semiconductors |
06/13/1989 | US4839010 Oxidation, heating of metal surface; sputtering aluminum; specularity reduction by bumps |
06/13/1989 | US4838993 Method of fabricating MOS field effect transistor |
06/13/1989 | US4838992 Method of etching aluminum alloys in semi-conductor wafers |
06/13/1989 | US4838991 Dry etching of polyxylylene masking layer |
06/13/1989 | US4838990 Using gas mixture of fluorine source, fluorosilane, bromine source, weak oxygen source |
06/13/1989 | US4838987 Method of etching a semiconductor body |
06/13/1989 | US4838984 Method for etching films of mercury-cadmium-telluride and zinc sulfid |
06/13/1989 | US4838979 Apparatus for processing substrate surface |
06/13/1989 | US4838978 Dry etching apparatus |
06/13/1989 | US4838654 Liquid crystal display device having display and driver sections on a single board |
06/13/1989 | US4838472 Orthogonal axis device with linear motors for positioning and bonding wires onto electronic components |
06/13/1989 | US4838238 Internal peripheral edge type blade holding device |
06/13/1989 | US4838201 Apparatus and process for vacuum chemical epitaxy |
06/13/1989 | US4838088 Pressure transducer and method for fabricating same |
06/13/1989 | US4837928 Method of producing a jumper chip for semiconductor devices |
06/13/1989 | CA1255815A1 Semiconductor etching apparatus with magnetic array and vertical shield |
06/13/1989 | CA1255814A1 Wafer chunck comprising a curved reference surface |
06/13/1989 | CA1255617A1 Removing metal layer from textured mandrel and depositing photoresponsive body |
06/08/1989 | DE3840042A1 Vorrichtung zum chemischen bedampfen mittels laser unter verwendung von lichtleitfasern Chemical vapor deposition apparatus using a laser using optical fibers |
06/08/1989 | DE3736671C1 Method for producing semiconductor components |
06/07/1989 | EP0319433A2 Precision alignment device |
06/07/1989 | EP0319427A2 Nonvolatile memory element |
06/07/1989 | EP0319215A2 Fabrication of FET integrated circuits |
06/07/1989 | EP0319214A1 Method for making semiconductor integrated circuits using selective tungsten deposition |
06/07/1989 | EP0319213A2 Method for fabricating semiconductor devices which include metal-containing material regions |
06/07/1989 | EP0319207A2 A method of producing a semi-conducteur device having a disordered superlattice |
06/07/1989 | EP0319175A2 Method of forming a solid article |
06/07/1989 | EP0319145A2 Horizontal laminar air flow work station |
06/07/1989 | EP0319121A1 Apparatus for producing semiconductors |
06/07/1989 | EP0319082A1 Method of forming a thin monocrystalline layer of a semiconductor material on a substrate |
06/07/1989 | EP0319063A2 Voltage multiplier circuit and rectifier element |
06/07/1989 | EP0319047A2 Power integrated circuit |
06/07/1989 | EP0319021A2 Apparatus for laser chemical vapour deposition |
06/07/1989 | EP0318954A2 Semiconductor device having a composite insulating interlayer |
06/07/1989 | EP0318869A1 Substrate potential detecting circuit |
06/07/1989 | EP0318806A2 Process for peeling protective film off a wafer |
06/07/1989 | EP0318649A2 Positive-working radiation-sensitive composistion and radiation-sensitive recording material produced therefrom for high-energy radiation |
06/07/1989 | EP0318641A2 Process and device for the transmission of thermal energy to or from a plate-like substrate |
06/07/1989 | EP0318555A1 Semiconductor field oxide formation process. |
06/07/1989 | EP0318539A1 Microwave plasma generator |
06/07/1989 | EP0175751B1 Method of fabricating vlsi cmos devices |
06/07/1989 | CN1004456B Semiconductor device and method of producing same |
06/07/1989 | CN1004455B Method of growth of thin film layer for use in a composite semiconductor |
06/06/1989 | US4837794 Filter apparatus for use with an x-ray source |
06/06/1989 | US4837793 Mass limited target |
06/06/1989 | US4837765 Test control circuit for integrated circuit |
06/06/1989 | US4837610 Insulation film for a semiconductor device |
06/06/1989 | US4837609 Semiconductor devices having superconducting interconnects |
06/06/1989 | US4837606 Vertical MOSFET with reduced bipolar effects |
06/06/1989 | US4837605 Indium-phosphide hetero-MIS-gate field effect transistor |
06/06/1989 | US4837536 Monolithic microwave integrated circuit device using high temperature superconductive material |
06/06/1989 | US4837530 Wideband (DC-50 GHz) MMIC FET variable matched attenuator |
06/06/1989 | US4837520 Fuse status detection circuit |
06/06/1989 | US4837505 Test mode activation circuit |
06/06/1989 | US4837461 Master slice type integrated circuit |
06/06/1989 | US4837443 Guard ring for a differentially pumped seal apparatus |
06/06/1989 | US4837186 Silicon semiconductor substrate with an insulating layer embedded therein and method for forming the same |
06/06/1989 | US4837185 Pulsed dual radio frequency CVD process |
06/06/1989 | US4837184 Process of making an electronic device package with peripheral carrier structure of low-cost plastic |
06/06/1989 | US4837183 Controlling temperature |
06/06/1989 | US4837182 Growth mask on substrate; forming, removal sheet |
06/06/1989 | US4837181 ROM memory programming procedure using MOS technology with thin gate oxide and junctions |
06/06/1989 | US4837180 Ladder gate LDDFET |
06/06/1989 | US4837179 Method of making a LDD mosfet |
06/06/1989 | US4837178 Method for producing a semiconductor integrated circuit having an improved isolation structure |
06/06/1989 | US4837177 High speed switching |
06/06/1989 | US4837176 Integrated circuit structures having polycrystalline electrode contacts and process |
06/06/1989 | US4837175 Making a buried channel FET with lateral growth over amorphous region |
06/06/1989 | US4837174 Implanting metal into silicon substrate; heat treatment |
06/06/1989 | US4837173 Overlapping zone doped with germanium and zone doped with phosphorus annealing |
06/06/1989 | US4837172 Method for removing impurities existing in semiconductor substrate |
06/06/1989 | US4837124 Mixtures of photsensitive acid and addition polymer having imide groups blocked by labile acid; resolution; contrast |
06/06/1989 | US4837121 Positive-working photoresists |
06/06/1989 | US4837113 Method for depositing compound from group II-VI |
06/06/1989 | US4837051 Forming apertures in oxide layer, adding diffusion barrier, vapor depositing silicon, doping, etching to planarize |
06/06/1989 | US4837048 Vapor deposition using gaseous silicon compound and gaseous halogen oxidizing agent |
06/06/1989 | US4836979 Cold compacting, annealing, working to produce a high density |
06/06/1989 | US4836905 Processing apparatus |
06/06/1989 | US4836902 Plasma gases; by-product ultraviolet radiation absorption baffles |
06/06/1989 | US4836888 Method of chemically etching semiconductor substrate |
06/06/1989 | US4836887 Chlorofluorocarbon additives for enhancing etch rates in fluorinated halocarbon/oxidant plasmas |
06/06/1989 | US4836886 More fluorine than chlorine; majority oxygen |
06/06/1989 | US4836885 Planarization process for wide trench isolation |
06/06/1989 | US4836883 Quality control testing |