| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
|---|
| 07/18/1989 | US4849375 Using nitric oxide and hydrogen chloride gas mixture |
| 07/18/1989 | US4849374 Method of sealing an electrical feedthrough in a semiconductor device |
| 07/18/1989 | US4849373 Growth of semi-insulating indium phosphide by liquid phase epitaxy |
| 07/18/1989 | US4849371 Monocrystalline semiconductor buried layers for electrical contacts to semiconductor devices |
| 07/18/1989 | US4849370 Silicon doped with germanium, then oxidized |
| 07/18/1989 | US4849369 Stacks of electroconductive gates, and dielectric material |
| 07/18/1989 | US4849368 Method of producing a two-dimensional electron gas semiconductor device |
| 07/18/1989 | US4849367 Method of manufacturing a DMOS |
| 07/18/1989 | US4849366 Depositing silicon nitride, oxidation, depositing polysilicon, photolithography and etching |
| 07/18/1989 | US4849365 Selective integrated circuit interconnection |
| 07/18/1989 | US4849364 Semiconductor devices |
| 07/18/1989 | US4849363 Two layer laminate of electroconductive material and refractory |
| 07/18/1989 | US4849344 Oxide isolation of epitaxial islands, blanket implants, separating contactors |
| 07/18/1989 | US4849323 Diazonium photoreactive agent |
| 07/18/1989 | US4849313 Method for making a reticle mask |
| 07/18/1989 | US4849296 Electronics, printed circuits |
| 07/18/1989 | US4849292 Using bonding agent; heating |
| 07/18/1989 | US4849260 Method for selectively depositing metal on a substrate |
| 07/18/1989 | US4849259 Method of forming silicon and oxygen containing layers |
| 07/18/1989 | US4849249 Deposited film forming process and deposited film forming device |
| 07/18/1989 | US4849248 Ion implantation method for making silicon-rich silicon dioxide film |
| 07/18/1989 | US4849188 Electromagnetic coils |
| 07/18/1989 | US4849146 Vapor phase reaction boron halide and ammonia; uniform structure |
| 07/18/1989 | US4849069 Of submicron cross-sectional dimensions, semiconductors |
| 07/18/1989 | US4849067 Sulfur containing fluorine, silicon containing fluorine gas, bromine, radio frequency |
| 07/18/1989 | US4849065 In magnetic field |
| 07/18/1989 | US4849051 Heat resistant positive resists and method for preparing heat-resistant relief structures |
| 07/18/1989 | US4848911 Method for aligning first and second objects, relative to each other, and apparatus for practicing this method |
| 07/18/1989 | US4848814 Wafer transfer hand |
| 07/18/1989 | US4848639 Compliant pad for use in tape automated bonding process |
| 07/18/1989 | US4848536 Apparatus for transporting an electrically conductive wafer |
| 07/18/1989 | US4848273 Epitaxial growth method and apparatus therefor |
| 07/18/1989 | US4848272 Apparatus for forming thin films |
| 07/18/1989 | US4848006 Spin drier for semiconductor materials |
| 07/18/1989 | EP0313619A4 System for controlling apparatus for growing tubular crystalline bodies. |
| 07/18/1989 | EP0309540A4 An apparatus and process for edge-defined, film-fed crystal growth. |
| 07/18/1989 | CA1257728A1 Mixtures crosslinkable by photopolymerization |
| 07/18/1989 | CA1257711A1 Mounting of semiconductor chips on a molded plastic substrate |
| 07/18/1989 | CA1257710A1 Method for the manufacture of lsi complementary mos field effect transistor circuits |
| 07/13/1989 | WO1989006444A2 Vertical power transistor and fabrication methods |
| 07/13/1989 | WO1989006441A1 Method of forming superconducting wires |
| 07/13/1989 | WO1989006440A1 Superconducting wire structure |
| 07/13/1989 | WO1989006438A1 Silicon carbide:metal carbide alloy semiconductor and method of making the same |
| 07/13/1989 | WO1989006430A1 Gap sensing/adjustment apparatus and method for a lithography machine |
| 07/13/1989 | WO1989006379A1 Aqueous developing solution and its use in developing positive-working photoresist composition |
| 07/13/1989 | WO1989006378A1 Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates |
| 07/13/1989 | WO1989004550A3 Zone-melting recrystallization process |
| 07/13/1989 | DE3844346A1 Method of production for a Bi-CMOS element using grooves (slots) |
| 07/13/1989 | DE3743776A1 Buried semiconductor components and method for their production |
| 07/13/1989 | DE3743774A1 Stackable semiconductor components |
| 07/13/1989 | DE3743734A1 Method for producing buried, insulating layers, and semiconductor body thus fabricated |
| 07/12/1989 | EP0323936A1 Process for producing an integrated circuit comprising two-level gate devices |
| 07/12/1989 | EP0323925A1 Charge duplicator for a charge transfer device |
| 07/12/1989 | EP0323902A2 Apparatus for thermal transfer with a semiconductor wafer in vacuum |
| 07/12/1989 | EP0323896A2 Complementary semiconductor device |
| 07/12/1989 | EP0323856A2 Substrate structure for composite semiconductor device |
| 07/12/1989 | EP0323714A2 MOS-controlled bidirectional semiconductor switch |
| 07/12/1989 | EP0323643A2 Semiconductor integrated circuit with a circuit limiting an input voltage to a predetermined voltage |
| 07/12/1989 | EP0323620A2 Etching method and etching apparatus |
| 07/12/1989 | EP0323616A1 Incombustible azeotropic like solvent compositions |
| 07/12/1989 | EP0323554A1 Ohmic contacts for semiconductor devices and method for forming ohmic contacts |
| 07/12/1989 | EP0323549A2 Bipolar semiconductor device having a conductive recombination layer |
| 07/12/1989 | EP0222777B1 Unit intended to restore the initial cleanness conditions in a quartz tube used as reaction chamber for fabricating integrated circuits |
| 07/12/1989 | CN1033908A Element for use in electric circuit |
| 07/12/1989 | CN1033907A Technological method of directly bonding semiconductor |
| 07/12/1989 | CN1004777B Semiconductor integrated circuit device and manufacturing process thereof |
| 07/11/1989 | US4847911 Electronic parts recognition method and apparatus therefore |
| 07/11/1989 | US4847845 Semiconductor laser with an interposed gap |
| 07/11/1989 | US4847808 Read only semiconductor memory having multiple bit cells |
| 07/11/1989 | US4847800 Input register for test operand generation |
| 07/11/1989 | US4847692 Solid-state image pickup device with CCDS in an interline transfer system and improved charge transfer electrode structure |
| 07/11/1989 | US4847674 High speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism |
| 07/11/1989 | US4847673 Semiconductor device |
| 07/11/1989 | US4847672 Integrated circuit die with resistive substrate isolation of multiple circuits |
| 07/11/1989 | US4847670 High performance sidewall emitter transistor |
| 07/11/1989 | US4847667 Phosphorus and boron doped silicon oxide films |
| 07/11/1989 | US4847476 Ion source device |
| 07/11/1989 | US4847445 Zirconium thin-film metal conductor systems |
| 07/11/1989 | US4847353 Resins of low thermal expansivity |
| 07/11/1989 | US4847217 Method for making a semiconductor device |
| 07/11/1989 | US4847216 Process for the deposition by epitaxy of a doped material |
| 07/11/1989 | US4847215 Method for forming silicon carbide semiconductor film |
| 07/11/1989 | US4847214 Method for filling trenches from a seed layer |
| 07/11/1989 | US4847213 Process for providing isolation between CMOS devices |
| 07/11/1989 | US4847212 Self-aligned gate FET process using undercut etch mask |
| 07/11/1989 | US4847211 Method of manufacturing semiconductor devices and product therefrom |
| 07/11/1989 | US4847183 Etching, relief patterns |
| 07/11/1989 | US4847178 Positive photosensitive o-quinone diazide composition with benzotriazole carboxylic acid or alkyl ester |
| 07/11/1989 | US4847168 Slicing saw blade |
| 07/11/1989 | US4847162 Passivation |
| 07/11/1989 | US4847138 Thermal writing on glass and glass-ceramic substrates |
| 07/11/1989 | US4847119 Semiconductor holding fixture and method |
| 07/11/1989 | US4847111 Plasma-nitridated self-aligned tungsten system for VLSI interconnections |
| 07/11/1989 | US4847052 Electromagnets |
| 07/11/1989 | US4847003 Silver-palladium films, multilayer, aluminum oxide, silicon oxide |
| 07/11/1989 | US4846931 Single crystals, releasing, multilayer |
| 07/11/1989 | US4846930 Optical apparatus |
| 07/11/1989 | US4846929 Wet etching of thermally or chemically cured polyimide |
| 07/11/1989 | US4846927 Gallium arsenide, encapsulation |
| 07/11/1989 | US4846926 HcCdTe epitaxially grown on crystalline support |