Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2006
01/19/2006DE102004062768A1 Production of a semiconductor component comprises forming a highly doped n-type region by doping n-type impurities on a conducting n-type region including silicon and further processing
01/19/2006DE102004055040A1 Verfahren zum Schneiden eines Laminats mit einem Laser und Laminat A method of cutting a laminate with a laser and laminate
01/19/2006DE102004051361A1 Verfahren und System zum hermetischen Abdichten von Packungen für optische Bauelemente Method and system for hermetic sealing of packings for optical components
01/19/2006DE102004044179A1 Verfahren zur Montage von Halbleiterchips Process for mounting semiconductor chips
01/19/2006DE102004032677A1 Verfahren zum Herstellen einer Maske auf einem Substrat A method for manufacturing a mask on a substrate
01/19/2006DE102004031966A1 Semiconductor wafer production, used in electronics and microelectronics, comprises separating a semiconductor wafer from a single crystal, mechanically processing the wafer, etching, fine grinding and polishing
01/19/2006DE102004031743A1 Verfahren zur Herstellung einer Epitaxieschicht für erhöhte Drain-und Sourcegebiete durch Entfernen von Oberflächendefekten der anfänglichen Kristalloberfläche A process for producing an epitaxial layer for increased drain and source regions by removing surface defects of the initial crystal surface
01/19/2006DE102004031742A1 Production of a sub-lithographic contact structure of a memory cell in a semiconductor component comprises preparing a front-end-of-line semiconductor wafer with an electrical contact, depositing an insulating layer and further processing
01/19/2006DE102004031710A1 Technik zum Übertragen von Verformung in ein Halbleitergebiet Technique for transmitting deformation in a semiconductor region
01/19/2006DE102004031708A1 Technik zum Herstellen eines Substrats mit kristallinen Halbleitergebieten unterschiedlicher Eigenschaften Technique for producing a substrate having crystalline semiconductor regions having different properties
01/19/2006DE102004031694A1 Herstellungsverfahren für einen Grabenkondensator mit einem Isolationskragen, der über einen vergrabenen Kontakt einseitig mit einem Substrat elektrisch verbunden ist, insbesondere für eine Halbleiterspeicherzelle Manufacturing method for a grave capacitor with an insulation collar, which is electrically connected through a buried contact on one side with a substrate, in particular for a semiconductor memory cell
01/19/2006DE102004031606A1 Integrierte Schaltungsanordnung mit pin-Diode und Herstellungsverfahren Integrated circuit arrangement with pin diode and manufacturing processes
01/19/2006DE102004031455A1 Verfahren zur Erstellung eines ESD-Schutzes bei einem mikroelektronischen Baustein und entsprechend ausgebildeter mikroelektronischer Baustein A process for the preparation of an ESD-protection in a microelectronic device and correspondingly formed microelectronic module
01/19/2006DE102004031385A1 Verfahren zur Herstellung einer DRAM-Speicherzellenanordnung mit Stegfeldeffekttransistoren und DRAM-Speicherzellenanordnung mit CFETs A method of manufacturing a DRAM memory cell array having fin field effect transistors and DRAM memory cell array with CFETS
01/19/2006DE102004031318A1 Premold housing for receiving a component, useful particularly for preparing microelectronic or sensor modules, comprises housing body and metal lead frame
01/19/2006DE102004031317A1 Gas sensor module, useful particularly for measuring carbon dioxide content of air in cars, comprises spectroscopic sensor, lead frame, filter chip and housing
01/19/2006DE102004031135A1 Resistives Halbleiterelement basierend auf einem Festkörperionenleiter The resistive semiconductor element based on a solid ionic conductors
01/19/2006DE102004031128A1 Elektrischer Schaltkreis mit einer Kohlenstoff-Leiterstruktur und Verfahren zum Herstellen einer Kohlenstoff-Leiterstruktur eines elektrischen Schaltkreises Electrical circuit having a carbon-conductor structure and method of manufacturing a carbon-conductor structure of an electric circuit
01/19/2006DE102004031121A1 Production of a layer arrangement, used in the manufacture of integrated circuits e.g. transistors, comprises forming a first conducting layer, a structuring auxiliary layer and a dielectric layer, and structuring the dielectric layer
01/19/2006DE102004031119A1 Production of a layer arrangement comprises structuring a semiconductor layer on a first electrically insulating layer using a hard mask formed on part of the semiconductor layer and further processing
01/19/2006DE102004031111A1 Sub lithographic structure production, involves removing etch resistant layer and hard mask layer, and providing eventually isotopic etching in such manner that sub lithographic conducting layer is obtained
01/19/2006DE102004030813A1 Verfahren zur Verbindung einer integrierten Schaltung mit einem Substrat und entsprechende Schaltungsanordnung A method for bonding an integrated circuit having a substrate and corresponding circuit arrangement
01/19/2006DE102004030573A1 Verfahren zum Herstellen von Halbleiterelementen A method for the manufacture of semiconductor elements
01/19/2006DE102004030411A1 Solarmodul als Verbundsicherheitsglas Solar module as laminated safety glass
01/19/2006DE102004030140B3 Flexible Kontaktierungsvorrichtung Flexible contacting
01/19/2006DE102004030122A1 Substrate structure method for characterizing a regular structure formed on a semiconductor substrate uses a scanning electron microscope
01/19/2006DE102004029585A1 Chip package used as a ball grid array package comprises a reinforcing layer fixed to a system carrier
01/19/2006DE102004023977A1 Transparenter Kontakt und Verfahren zu dessen Herstellung A transparent contact, and process for its preparation
01/19/2006DE102004020497B3 Method of producing electrical contacts through a composite sheet of semiconductor chips and plastic having conductive particles applies high voltage across sheet
01/19/2006DE102004007410B4 Verfahren zum Herstellen einer Speicherzelle A method for fabricating a memory cell
01/19/2006DE10152536B4 Verfahren und Vorrichtung zum Reduzieren einer Emission von Perfluorverbindungen (PFC-Emission) während der Halbleiterherstellung Method and apparatus for reducing the emission of perfluorocompounds (PFC emissions) during semiconductor manufacture
01/19/2006DE10131940B4 Halbleiterchip und Verfahren zur Ausbildung von Kontakten auf einer Halbleiteranordnung Semiconductor chip and method for forming contacts on a semiconductor device
01/19/2006DE10125798B4 Abbildungssystem zur Positionierung einer Messspitze auf einen Kontaktbereich eines Mikrochips und ein Verfahren zur Darstellung An imaging system for positioning a probe tip on a contact area of ​​a microchip and a method for displaying
01/19/2006DE10036672B4 GaAs-Flüssigphasenepitaxiewafer und Verfahren zum Herstellen desselben GaAs Flüssigphasenepitaxiewafer thereof and methods for preparing
01/19/2006CA2573928A1 Photonic crystal emitter, detector, and sensor
01/19/2006CA2567070A1 Silicon carbide devices and fabricating methods therefor
01/18/2006EP1617533A1 Method of manufacturing semiconductor device
01/18/2006EP1617492A1 Nanoscale control of the spatial distribution, shape and size of thin films of conjugated organic molecules through the production of silicon oxide nanostructures
01/18/2006EP1617487A2 Solar module as a safety glass
01/18/2006EP1617483A1 Semiconductor device and process for fabricating the same
01/18/2006EP1617478A1 Magnetic memory device and magnetic memory device write method
01/18/2006EP1617476A2 Vertical integration in power integrated circuits
01/18/2006EP1617475A1 Semiconductor device
01/18/2006EP1617470A2 Anchoring of thin film patterns using lateral oxidation to prevent the dewetting effect
01/18/2006EP1617469A2 Semiconductor device having copper wiring and its manufacturing method
01/18/2006EP1617468A1 Probe apparatus with optical length-measuring unit and probe testing method
01/18/2006EP1617467A1 Process for producing dielectric insulating thin film, and dielectric insulating material
01/18/2006EP1617466A1 Method for producing single crystal ingot from which semiconductor wafer is sliced
01/18/2006EP1617465A1 Cmp polishing method and method for manufacturing semiconductor device
01/18/2006EP1617464A1 Method of growing semiconductor crystal
01/18/2006EP1617463A2 Film peeling method and film peeling device
01/18/2006EP1617462A2 Tape adhering method and tape adhering apparatus
01/18/2006EP1617461A2 Measurement station and processing station for semiconductor wafers
01/18/2006EP1617456A1 Driving mechanism for a vacuum treating system
01/18/2006EP1617300A2 Endless belt type transferring apparatus and image forming apparatus
01/18/2006EP1617287A1 Method of manufacturing mask blank
01/18/2006EP1616927A1 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
01/18/2006EP1616926A1 Slurry composition and method for chemical polishing of copper integrated with tungsten based barrier metals
01/18/2006EP1616888A1 Resin for under-layer material, under-layer material, laminate and method for forming resist pattern
01/18/2006EP1616356A2 Silicon carbide mosfets with integrated antiparallel junction barrier schottky diode and methods of fabricating same
01/18/2006EP1616355A1 Bipolar transistor and method for the production thereof
01/18/2006EP1616352A1 Helical microelectronic contact and method for fabricating same
01/18/2006EP1616349A2 Method and apparatus for optically aligning integrated circuit devices
01/18/2006EP1616348A1 Monitoring the reduction in thickness as material is removed from a wafer composite and test structure for monitoring removal of material
01/18/2006EP1616347A1 Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
01/18/2006EP1616346A2 Method for producing a strained layer on a substrate and corresponding layer structure
01/18/2006EP1616345A2 Method for producing a tensioned layer on a substrate, and a layer structure
01/18/2006EP1616344A2 Creation of a permanent structure with high three-dimensional resolution
01/18/2006EP1616337A2 Thermal interconnect and interface systems, methods of production and uses thereof
01/18/2006EP1616042A2 System and method for forming multi-component dielectric films
01/18/2006EP1615735A2 Wafer carrier cleaning system
01/18/2006EP1374293B1 Method for the production of a mosfet with very small channel length
01/18/2006EP1305744B1 Method and system for hierarchical metal-end, enclosure and exposure checking
01/18/2006EP1294534B1 In-situ endpoint detection and process monitoring method and apparatus for chemical mechanical polishing
01/18/2006EP1258060A4 Fast wavelength correction technique for a laser
01/18/2006EP1218765B1 Wafer-level burn-in and test cartridge
01/18/2006EP1169731A4 Semiconductor device having a self-aligned contact structure and methods of forming the same
01/18/2006EP1034564B1 Process for fabricating semiconductor device including antireflective etch stop layer
01/18/2006EP1029346A4 Vertical interconnect process for silicon segments with thermally conductive epoxy preform
01/18/2006EP1029249A4 Test head structure for integrated circuit tester
01/18/2006EP1027722B1 Plating system for semiconductor materials
01/18/2006EP0996963A4 Multiple point position scanning system
01/18/2006CN2753021Y Clamp for semiconductor laser chip bar
01/18/2006CN2752956Y 电子元件 Electronic component
01/18/2006CN2751972Y Polishing product for processing base material
01/18/2006CN1723749A Electronic component placement machine and electronic component placement method
01/18/2006CN1723590A Circuit connecting material, film-like circuit connecting material using the same, circuit member connecting structure, and method of producing the same
01/18/2006CN1723574A LED and fabrication method thereof
01/18/2006CN1723571A Controlling electromechanical behavior of structures within a microelectromechanical systems device
01/18/2006CN1723570A Insulated gate semiconductor device and method of making the same
01/18/2006CN1723568A Solid-state circuit assembly
01/18/2006CN1723567A Package having exposed integrated circuit device
01/18/2006CN1723563A SOI wafer and production method therefor
01/18/2006CN1723562A Semiconductor device having ferroelectric film and manufacturing method thereof
01/18/2006CN1723557A High density package interconnect power and ground strap and method therefor
01/18/2006CN1723556A Semiconductor package having semiconductor constructing body and method of manufacturing the same
01/18/2006CN1723555A Semiconductor memory having charge trapping memory cells and fabrication method
01/18/2006CN1723554A Method for the production of an integrated circuit arrangement comprising a metal nitride layer and integrated circuit arrangement
01/18/2006CN1723553A Recycling by mechanical means of a wafer comprising a taking-off structure after taking-off a thin layer thereof
01/18/2006CN1723552A Reduced splattering of unpassivated laser fuses