Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2006
01/24/2006US6988463 Ion beam source with gas introduced directly into deposition/vacuum chamber
01/24/2006US6988327 Methods and systems for processing a substrate using a dynamic liquid meniscus
01/24/2006US6988326 Phobic barrier meniscus separation and containment
01/24/2006US6988312 Method for producing multilayer circuit board for semiconductor device
01/24/2006US6988307 Method of making an integrated inductor
01/24/2006CA2382724C Nanometer-sized silica-coated alpha-alumina abrasives in chemical mechanical planarization
01/24/2006CA2184432C Apparatus for coating substrates in a vacuum
01/19/2006WO2006007462A1 ISOLATION STRUCTURE FOR A MEMORY CELL USING Al2O3 DIELECTRIC
01/19/2006WO2006007446A2 Photonic crystal emitter, detector, and sensor
01/19/2006WO2006007396A1 Strained silicon-on-silicon by wafer bonding and layer transfer
01/19/2006WO2006007394A2 Strained tri-channel layer for semiconductor-based electronic devices
01/19/2006WO2006007367A1 Method of making mirror image memory cell transistor pairs featuring poly floating spaces
01/19/2006WO2006007355A1 Method for providing uniform removal of organic material
01/19/2006WO2006007350A1 High mobility tri-gate devices and methods of fabrication
01/19/2006WO2006007343A2 Semiconductor devices shared element(s) apparatus and method
01/19/2006WO2006007327A2 Forming semiconductor devices by printing multiple semiconductor inks
01/19/2006WO2006007297A1 Elongated features for improved alignment process integration
01/19/2006WO2006007281A1 Solder bumps formation using paste retaining its shape after uv irradiation
01/19/2006WO2006007192A2 Three-dimensional photoresist structures and method of making
01/19/2006WO2006007188A1 Technique for forming a substrate having crystalline semiconductor regions of different characteristics
01/19/2006WO2006007156A1 Fabrication of crystalline materials over substrates
01/19/2006WO2006007143A2 Schottky device and method of forming
01/19/2006WO2006007142A2 Ultra-thin die and method of fabricating same
01/19/2006WO2006007141A2 Lead solder indicator and method
01/19/2006WO2006007081A2 Method of making a semiconductor device having a strained semiconductor layer
01/19/2006WO2006007080A2 Method of forming a nanocluster charge storage device
01/19/2006WO2006007069A2 Method of forming a nanocluster charge storage device
01/19/2006WO2006007068A2 Integration of strained ge into advanced cmos technology
01/19/2006WO2006007005A1 A system and method for processing a substrate using supercritical carbon dioxide processing
01/19/2006WO2006006964A1 Silicon carbide devices and fabricating methods therefor
01/19/2006WO2006006850A1 Laser cutting method and arrangement for performing said method
01/19/2006WO2006006752A1 Brittle material transfer apparatus using linear motor
01/19/2006WO2006006730A1 Planar motor equipment, stage equipment, exposure equipment and device manufacturing method
01/19/2006WO2006006635A2 Defect repair device and defect repair method
01/19/2006WO2006006630A1 Magnetoresistive device, method for manufacturing magnetoresistive device and magnetic random access memory
01/19/2006WO2006006611A1 Ic chip and its manufacturing method
01/19/2006WO2006006584A1 Vapor phase growing equipment
01/19/2006WO2006006565A1 Exposure equipment and device manufacturing method
01/19/2006WO2006006562A1 Method of determining exposure conditions, exposure method, exposure apparatus, and method of producing device
01/19/2006WO2006006540A1 Photomask blank, photomask manufacturing method and semiconductor device manufacturing method
01/19/2006WO2006006526A1 Method and device for treating outer periphery of base material
01/19/2006WO2006006391A1 Wafer heating equipment and semiconductor manufacturing equipment
01/19/2006WO2006006364A1 Substrate recovery method and substrate processing apparatus
01/19/2006WO2006005959A1 Apparatus for and a method of determining characteristics of thin-layer structures using low-coherence interferometry
01/19/2006WO2006005869A1 Method for metallizing the previously passivated surface of a semiconductor material and resulting material
01/19/2006WO2006005670A1 Method for producing a capacitor arrangement, and corresponding capacitor arrangement
01/19/2006WO2006005321A2 Method for producing an integrated circuit and substrate comprising a buried layer
01/19/2006WO2006005317A2 Method for the production of an electric component and component
01/19/2006WO2006005304A2 Semiconductor component with a semiconductor chip and electric connecting elements for connecting to a conductor structure
01/19/2006WO2005114709A3 Inter-process sensing of wafer outcome
01/19/2006WO2005109485A3 Metallic air-bridges
01/19/2006WO2005106890A8 An organic electronic circuit with functional interlayer and method for making the same
01/19/2006WO2005104211A3 Land grid array packaged device and method of forming same
01/19/2006WO2005103321A3 Ionized physical vapor deposition (ipvd) process
01/19/2006WO2005101460A3 Bonding an interconnect to a circuit device and related devices
01/19/2006WO2005101458A3 Method and use of a device for applying coatings onto band-shaped structures during the production of semiconductor components
01/19/2006WO2005098932A3 Method and device for feeding encapsulating material to a mould cavity
01/19/2006WO2005094534A3 A semiconductor device having a silicided gate electrode and method of manufacture therefor
01/19/2006WO2005076794A3 Die encapsulation using a porous carrier
01/19/2006WO2005062355A8 Capacitor
01/19/2006WO2005022639A3 Gallium nitride material devices and methods of forming the same
01/19/2006WO2005004189A3 Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith
01/19/2006WO2005001895A3 Patterned thin film graphite devices and method for making same
01/19/2006WO2004086489A8 System and method of silicon crystallization
01/19/2006US20060015834 Method for correcting crosstalk
01/19/2006US20060015760 Semiconductor device for supplying power supply voltage to semiconductor device
01/19/2006US20060015279 Device for correcting reference position for transfer mechanism, and correction method
01/19/2006US20060015206 Formula-based run-to-run control
01/19/2006US20060014860 interposed between circuit electrodes facing each other and electrically connects the electrodes in the pressing direction by pressing the facing electrodes against each other; the circuit-connecting material comprising as essential components, a curing agent and a hydroxy resin with radical polymer
01/19/2006US20060014845 Low dielectric organosilicate polymer composite
01/19/2006US20060014657 Etching; corrosion resistance
01/19/2006US20060014479 Arrangement of a chemical-mechanical polishing tool and method of chemical-mechanical polishing using such a chemical-mechanical polishing tool
01/19/2006US20060014476 Method of fabricating a window in a polishing pad
01/19/2006US20060014465 Semiconductor device and manufacturing method therefor
01/19/2006US20060014400 Method for fabricating a buried metallic layer in a semiconductor body and semiconductor component having a buried metallic layer
01/19/2006US20060014399 Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films
01/19/2006US20060014398 Method of forming dielectric layer using plasma enhanced atomic layer deposition technique
01/19/2006US20060014397 Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon
01/19/2006US20060014396 Method for forming a resist protect layer
01/19/2006US20060014395 Method of manufacturing displays and apparatus for manufacturing displays
01/19/2006US20060014394 Process for low temperature, dry etching, and dry planarization of copper
01/19/2006US20060014393 Process method to facilitate silicidation
01/19/2006US20060014392 Method for producing a semiconductor component and a semiconductor component produced according to the method
01/19/2006US20060014391 Method of manufacturing a semiconductor device using a cleaning composition
01/19/2006US20060014390 Slurry composition, polishing method using the slurry composition and method of forming a gate pattern using the slurry composition
01/19/2006US20060014389 Method of manufacturing semiconductor device
01/19/2006US20060014388 Wafer processing apparatus & methods for depositing cobalt silicide
01/19/2006US20060014387 Silicide formation using a low temperature anneal process
01/19/2006US20060014386 Small grain size, conformal aluminum interconnects and method for their formation
01/19/2006US20060014385 Method of forming titanium nitride layer and method of fabricating capacitor using the same
01/19/2006US20060014384 Method of forming a layer and forming a capacitor of a semiconductor device having the same layer
01/19/2006US20060014383 Method of producing semiconductor single crystal wafer and laser processing device used therefor
01/19/2006US20060014382 Method for forming an interconnection line in a semiconductor device
01/19/2006US20060014381 Method for forming interconnection line in semiconductor device using a phase-shift photo mask
01/19/2006US20060014380 Production method for wiring structure of semiconductor device
01/19/2006US20060014379 Semiconductor processing methods of forming contact openings, methods of forming electrical connections and interconnections, and integrated circuitry
01/19/2006US20060014378 System and method to form improved seed layer
01/19/2006US20060014377 Method for forming passivation film of semiconductor device and structure of passivation film of semiconductor device
01/19/2006US20060014376 Stacked via-stud with improved reliability in copper metallurgy
01/19/2006US20060014375 Soluble carbon nanotubes