| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 06/01/2006 | DE10223179B4 Widerstandsbauelement und Verfahren zum Betreiben des Widerstandsbauelements Resistance component and method of operating the resistance component |
| 06/01/2006 | DE102005055145A1 Eliminierung von systematischen Verlusten der Prozessausbeute durch präzise Justierung der Wafer-Platzierung Elimination of systematic loss of process yield by precise adjustment of the wafer placement |
| 06/01/2006 | DE102005052272A1 Nonvolatile semiconductor device e.g. electrically erasable programable ROM, has multi-bit nonvolatile memory unit cell with set of transistors for sharing source and drain regions |
| 06/01/2006 | DE102005028629A1 Verfahren zur Herstellung eines Halbleiterbauelements A process for producing a semiconductor device |
| 06/01/2006 | DE102005021988A1 Manufacture of flash memory device comprises forming oxide film on semiconductor substrate, performing pre-annealing process under nitrogen gas atmosphere, nitrifying oxide film, and performing post-annealing process |
| 06/01/2006 | DE102004058468A1 MOS-Transistor mit reduziertem Kink-Effekt und Verfahren zu seiner Herstellung MOS transistor with a reduced kink effect and process for its preparation |
| 06/01/2006 | DE102004057809A1 Formation of semiconductor structure by modifying first portion of material layer located over first transistor element, and performing etching process to remove modified first portion at greater etch rate than unmodified second portion |
| 06/01/2006 | DE102004057791A1 Trench transistor e.g. dense trench transistor, has semiconductor body, in which several cell field trenches are formed, and source region, body region and body contact region that are provided in mesa regions of trenches |
| 06/01/2006 | DE102004057237A1 Making contact holes in semiconductor body with insulated electrodes in trenches, employs thermal oxidation, planarization and remaining insulation layer as contact hole mask |
| 06/01/2006 | DE102004057235A1 Vertical trench transistor, has transistor cells with body regions and body contact regions arranged between body regions and contact holes, where dimensions and designs of body regions and body contact regions are selected |
| 06/01/2006 | DE102004057181A1 Buried conducting connection manufacturing method for e.g. silicon substrate, involves diffusing doping material in poly silicon filling in silicon substrate in contact surface area to form buried conducting connection in substrate |
| 06/01/2006 | DE102004057057A1 Substrat-Arbeitsstation und Zusatzmodul für eine Substrat-Arbeitsstation Substrate workstation and plug-in for a substrate workstation |
| 06/01/2006 | DE102004056970A1 Production of an electrical contact between semiconductor parts comprises placing one part next to the other part so that their connecting surfaces lie opposite each other and exerting a pressure on the pin of one part to form the contact |
| 06/01/2006 | DE102004056772A1 Lateral semiconductor component, e.g. to act as a bipolar component like a photo-intrinsic diode or an insulated gate bipolar transistor, has high electric strength |
| 06/01/2006 | DE102004056534A1 Halbleiterbauteil mit einem Halbleiterchip und mit Außenkontakten sowie Verfahren zur Herstellung desselben Of the same semiconductor device with a semiconductor chip and to external contacts as well as methods for preparing |
| 06/01/2006 | DE102004056028A1 Three dimensional structured substrate producing device, has vacuum-coating equipment for coating substrate in vacuum chamber, and laser provided for processing substrate in vacuum chamber |
| 06/01/2006 | DE102004055147A1 Bipolar transistor manufacturing method, involves doping extrinsic area of base layer by bringing base layer in contact with plasma containing dosing material or with gaseous phase having dosing material |
| 06/01/2006 | DE102004054818A1 Reversibler Oxidationsschutz von Mikro-Bauelementen Reversible oxidation of micro-components |
| 06/01/2006 | DE102004054553A1 Moisture-sensitive electronic device element manufacture involves activating desiccant on internal surface of enclosure, upon exposure to microwave radiation of wavelength that is absorbed by water molecules |
| 06/01/2006 | DE102004048278B3 Simulations- und/oder Layoutverfahren für Leistungstransistoren, die für unterschiedliche Leistungen ausgelegt sind Simulation and / or layout method for power transistors that are designed for different services |
| 06/01/2006 | DE102004007409B4 Überkonformes Herstellungsverfahren für eine Halbleiterstruktur About compliant manufacturing method of a semiconductor structure |
| 06/01/2006 | DE10155020B4 Referenzprobe zur quantitativen Bestimmung von Oberflächenkontaminationen und Verfahren zu ihrer Herstellung Reference sample for quantitative determination of surface contamination and processes for their preparation |
| 06/01/2006 | CA2588114A1 Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same |
| 06/01/2006 | CA2585009A1 Contact doping and annealing systems and processes for nanowire thin films |
| 05/31/2006 | EP1662579A1 Photodiode detector |
| 05/31/2006 | EP1662576A1 Zinc oxide-based multilayer structural body and its producing method |
| 05/31/2006 | EP1662570A2 Electronic device with a capacitor and an inductor and method of manufacturing the same |
| 05/31/2006 | EP1662565A2 Semiconductor package |
| 05/31/2006 | EP1662563A2 Methods of forming memory arrays |
| 05/31/2006 | EP1662562A2 Methods for forming conductive capacitor plugs |
| 05/31/2006 | EP1662561A2 Methods of forming capacitor contact openings |
| 05/31/2006 | EP1662560A2 Edge removal of silicon-on-insulator transfer wafer |
| 05/31/2006 | EP1662559A2 Chucking method and processing method using the same |
| 05/31/2006 | EP1662558A1 Field effect transistor and method for manufacturing same |
| 05/31/2006 | EP1662557A1 Heterojunction bipolar transistor |
| 05/31/2006 | EP1662556A1 Process for producing oxide thin film and production apparatus therefor |
| 05/31/2006 | EP1662555A1 Method for producing soi wafer |
| 05/31/2006 | EP1662554A1 Exposure apparatus, exposure method, and device producing method |
| 05/31/2006 | EP1662551A2 Capacitor insulating film for a semiconductor memory device and method for fabricating the same |
| 05/31/2006 | EP1662550A1 Method for producing soi wafer |
| 05/31/2006 | EP1662549A1 Method for manufacturing bonded wafer |
| 05/31/2006 | EP1662548A2 System and method of wafer processing and ion implantation |
| 05/31/2006 | EP1662324A2 Reticle-carrying container |
| 05/31/2006 | EP1662323A1 Material for forming resist-protecting film for immersion exposure process, resist-protecting film made of such material, and method for forming resist pattern using such resist-protecting film |
| 05/31/2006 | EP1661961A2 Metal polishing composition and method of polishing using the same |
| 05/31/2006 | EP1661960A1 Coating composition and low dielectric siliceous material produced by using same |
| 05/31/2006 | EP1661731A2 Process for removing residues from a semiconductor substrate |
| 05/31/2006 | EP1661656A2 Laser method for machining through holes only in a ceramic green sheet, the latter provided with a carrier film |
| 05/31/2006 | EP1661442A2 Electronic component mounting apparatus and method of mounting electronic components |
| 05/31/2006 | EP1661186A2 Electronic device comprising an ldmos transistor |
| 05/31/2006 | EP1661185A1 Semiconductor component and method of manufacturing same |
| 05/31/2006 | EP1661177A2 Method for integrating metals having different work functions to form cmos gates having a high-k gate dielectric and related structure |
| 05/31/2006 | EP1661176A1 Self-aligned drain/channel junction in vertical pass transistor dram cell design for device scaling |
| 05/31/2006 | EP1661175A1 Multi-purpose metallic sealing |
| 05/31/2006 | EP1661174A1 Process for fabricating electronic components using liquid injection molding |
| 05/31/2006 | EP1661173A1 Method of fabricating an ultra-narrow channel semiconductor device |
| 05/31/2006 | EP1661172A2 Method for producing a semiconductor component with a praseodymium oxide dielectric |
| 05/31/2006 | EP1661171A2 Multiple frequency plasma etch reactor |
| 05/31/2006 | EP1661170A1 Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
| 05/31/2006 | EP1661169A1 Method for depositing thin film on wafer |
| 05/31/2006 | EP1661168A1 Integrated circuit with a capacitor and method for the production thereof |
| 05/31/2006 | EP1661167A1 Process for fabrication of a ferroelectric capacitor |
| 05/31/2006 | EP1661166A1 Substrate handling device for a charged particle beam system |
| 05/31/2006 | EP1661163A2 Method for fabricating a nitrided silicon-oxide gate dielectric |
| 05/31/2006 | EP1661162A2 Plasma ashing process |
| 05/31/2006 | EP1661161A2 Perimeter partition-valve with protected seals |
| 05/31/2006 | EP1661160A2 Supercritical fluid-assisted deposition of materials on semiconductor substrates |
| 05/31/2006 | EP1661159A1 Component mounting apparatus and component mounting method |
| 05/31/2006 | EP1661158A2 Device threshold control of front-gate silicon-on-insulator mosfet using a self-aligned back-gate |
| 05/31/2006 | EP1661157A2 Method and device for contacting semiconductor chips |
| 05/31/2006 | EP1660973A2 Enhanced parimutuel wagering |
| 05/31/2006 | EP1660954A2 Method of inhibiting corrosion of copper plated or metallized surfaces and circuitry during semiconductor manufacturing processes |
| 05/31/2006 | EP1660703A1 Method of manufacturing diamond substrates |
| 05/31/2006 | EP1660702A1 A method of fabricating an epitaxially grown layer |
| 05/31/2006 | EP1660606A1 Abrasive particles for chemical mechanical polishing |
| 05/31/2006 | EP1660403A1 Fabricating nanoscale and atomic scale devices |
| 05/31/2006 | EP1660018A2 Electrospray systems and methods |
| 05/31/2006 | EP1586109A4 Semiconductor photodetector with internal reflector |
| 05/31/2006 | EP1497701B1 Method and apparatus for simplified system configuration |
| 05/31/2006 | EP1495426A4 Derivatives having demand-based, adjustable returns, and trading exchange therefor |
| 05/31/2006 | EP1465479A4 Automated foot bath apparatus and method |
| 05/31/2006 | EP1449240B1 Incorporation of nitrogen into high k dielectric film |
| 05/31/2006 | EP1423869B1 Method for thermally treating a substrate that comprises several layers |
| 05/31/2006 | EP1415344B1 Semiconductor structure implementing sacrificial material and methods for making and implementing the same |
| 05/31/2006 | EP1391265B1 Contactor cleaning sheet, and contactor cleaning method |
| 05/31/2006 | EP1383812B1 Polycyclic fluorine-containing polymers and photoresists for microlithography |
| 05/31/2006 | EP1381491B1 Conductive polishing article for electrochemical mechanical polishing |
| 05/31/2006 | EP1221177B1 Conformal lining layers for damascene metallization |
| 05/31/2006 | EP1190285B1 Method and device for conditioning atmosphere in a process chamber |
| 05/31/2006 | EP1173882B1 Device for treating wafers |
| 05/31/2006 | EP1166336B1 Device for manufacturing semiconductor products |
| 05/31/2006 | EP1135796B1 PROCESS FOR FORMING A SiON/SiO2 INTERLEVEL DIELECTRIC WITH AFTER-TREATMENT OF THE CVD SILICIUM OXYNITRIDE LAYER |
| 05/31/2006 | EP1088239B1 Device for measuring and analyzing electrical signals of an integrated circuit component |
| 05/31/2006 | EP1064675B1 Method for producing a semiconductor surface covered with fluorine |
| 05/31/2006 | EP1062848A4 Integrated circuit connection using an electrically conductive adhesive |
| 05/31/2006 | EP0970517B1 Unbalanced bipolar electrostatic chuck power supplies and methods therefor |
| 05/31/2006 | CN2785105Y Inductance coupling coil and its inductance coupling plasma equipment |
| 05/31/2006 | CN2785104Y Inductance coupling coil and its inductance coupling plasma equipment |
| 05/31/2006 | CN1781195A Method for making group ó¾ nitride devices and devices produced thereby |
| 05/31/2006 | CN1781194A Method for production of a semiconductor device with auto-aligned metallisations |