Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
05/2010
05/18/2010US7718480 ESD clamps and NMOS arrays with increased electrical overstress robustness
05/18/2010US7718479 Forming integrated circuits with replacement metal gate electrodes
05/18/2010US7718478 Manufacturing method for field-effect transistor
05/18/2010US7718476 Display apparatus and fabricating method thereof
05/18/2010US7718475 Method for manufacturing an integrated circuit including a transistor
05/18/2010US7718474 Semiconductor device and method of manufacturing the same
05/18/2010US7718473 HF control bidirectional switch
05/18/2010US7718472 Integrated circuit package-on-package stacking system and method of manufacture thereof
05/18/2010US7718470 Package substrate and method for fabricating the same
05/18/2010US7718469 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
05/18/2010US7718468 Manufacture method for ZnO-containing compound semiconductor layer
05/18/2010US7718464 Integrated circuit fabricated using an oxidized polysilicon mask
05/18/2010US7718463 Display device and manufacturing method thereof
05/18/2010US7718462 Method for manufacturing semiconductor device and method for manufacturing display device
05/18/2010US7718461 Nanometer-scale electromechanical switch and fabrication process
05/18/2010US7718460 Solid state imaging apparatus
05/18/2010US7718458 Electric field concentration minimization for MEMS
05/18/2010US7718457 Method for producing a MEMS device
05/18/2010US7718456 Package for housing light-emitting element and method for manufacturing package for housing light-emitting element
05/18/2010US7718455 Method of forming a buried aperture nitride light emitting device
05/18/2010US7718454 Method for manufacturing a semiconductor laser
05/18/2010US7718453 Organic electroluminescent device, method of manufacturing the same, and electronic apparatus
05/18/2010US7718452 Display apparatus and method of manufacturing the same
05/18/2010US7718451 Method for producing an optoelectronic device with patterned-metallized package body and method for the patterned metalization of a plastic-containing body
05/18/2010US7718450 Method for manufacturing nitride semiconductor device
05/18/2010US7718449 Wafer level package for very small footprint and low profile white LED devices
05/18/2010US7718446 Evaluation method for crystal defect in silicon single crystal wafer
05/18/2010US7718350 laminating dry film resist on the resist pattern including the given pattern of opening concavity, patterning dry film resist by photolithography, so that the upper position of such pattern of opening concavity corresponding to the site needing film thickness precision is capped by a part of the resist
05/18/2010US7718348 integrated circuits; photoresists
05/18/2010US7718347 copper indium gallium selenide semiconductor stack layers; photovoltaic cells; integrated circuits; electrodeposition; photoresists; photomasks
05/18/2010US7718345 Composite photoresist structure
05/18/2010US7718329 Method of fabricating liquid crystal display device
05/18/2010US7718274 Method for welding two welding parts by means of a fillet weld and welding part with an inclined tapered edge area therefor
05/18/2010US7718231 fabricating silicon-on-insulators (SOIs) structures with a very thin (less than 100 nm), but uniform buried oxide; processing time is reduced, yet the throughput is increased by reducing the oxygen implantation dose
05/18/2010US7718228 self-aligned silicides; heat, light treatment; cost efficiency; free of vacuum equipment and high-frequency generator; semiconductors
05/18/2010US7718084 via phosphoric acid containing solutions; improved geometry of integrated circuits
05/18/2010US7718081 etching includes transferring pattern into substrate using double patterned amorphous carbon layer on substrate as hardmask; photoresists; vapor deposition; semiconductors; integrated circuits
05/18/2010US7718080 Electronic beam processing device and method using carbon nanotube emitter
05/18/2010US7718079 High density plasma chemical vapor deposition process
05/18/2010US7718031 Mask frame and method of fixing mask on the mask frame
05/18/2010US7718030 Method and system for controlling radical distribution
05/18/2010US7718029 bonding material includes metal filler disposed in an adhesive layer suitable for reacting with halogen containing plasmas such that a halogen based metal layer is formed on exposed portion of bonding material upon exposure to plasma
05/18/2010US7718025 Method of forming folded-stack packaged device using progressive folding tool
05/18/2010US7718011 Apparatus for cleaning and drying substrates
05/18/2010US7718007 Substrate supporting member and substrate processing apparatus
05/18/2010US7718004 Gas-introducing system and plasma CVD apparatus
05/18/2010US7718001 Method for fabricating semiconductor epitaxial layers using metal islands
05/18/2010US7717987 Coating material based on a copper-indium-gallium alloy, in particular for the production of sputter targets, tubular cathodes and the like
05/18/2010US7717966 Barrier assembly for an exposure apparatus
05/18/2010US7717768 Wafer polishing apparatus and method for polishing wafers
05/18/2010US7717617 Multiple band pass filtering for pyrometry in laser based annealing systems
05/18/2010US7717253 Arrangement for processing disks of different sizes
05/18/2010US7717061 Gas switching mechanism for plasma processing apparatus
05/18/2010US7716823 Bonding an interconnect to a circuit device and related devices
05/14/2010WO2010054292A2 Exhaust condensate removal apparatus for abatement system
05/14/2010WO2010054291A2 Abatement system
05/14/2010WO2010054231A1 Laterally varying ii-vi alloys and uses thereof
05/14/2010WO2010054206A2 Improved process equipment architecture
05/14/2010WO2010054193A2 Conductive contamination resistant insulator
05/14/2010WO2010054192A1 Method of preparing detectors for oxide bonding to readout integrated chips
05/14/2010WO2010054184A2 Chemical vapor deposition with elevated temperature gas injection
05/14/2010WO2010054173A2 Thin film semiconductor alloy material prepared by a vhf energized plasma deposition process
05/14/2010WO2010054139A1 A method of fabricating a fin field effect transistor (finfet) device
05/14/2010WO2010054112A2 Plasma resistant coatings for plasma chamber components
05/14/2010WO2010054087A2 Vhf energized plasma deposition process for the preparation of thin film materials
05/14/2010WO2010054076A2 Rapid thermal processing chamber with micro-positioning system
05/14/2010WO2010054073A2 Vertical junction field effect transistors having sloped sidewalls and methods of making
05/14/2010WO2010053996A1 Addition of hydrogen and/or nitrogen containing compounds to the nitrogen-containing solvent used during the ammonothermal growth of group-iii nitride crystals
05/14/2010WO2010053977A1 Group-iii nitride monocrystal with improved crystal quality grown on an etched-back seed crystal and method of producing the same
05/14/2010WO2010053966A1 Group-iii nitride monocrystal with improved purity and method of producing the same
05/14/2010WO2010053965A1 Reactor designs for use in ammonothermal growth of group-iii nitride crystals
05/14/2010WO2010053964A1 Novel vessel designs and relative placements of the source material and seed crystals with respect to the vessel for the ammonothermal growth of group-iii nitride crystals
05/14/2010WO2010053963A1 Controlling relative growth rates of different exposed crystallographic facets of a group-iii nitride crystal during the ammonothermal growth of a group-iii nitride crystal
05/14/2010WO2010053960A1 Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystals
05/14/2010WO2010053924A2 In-line wafer thickness sensing
05/14/2010WO2010053880A1 Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes
05/14/2010WO2010053878A2 Laminar flow in a precursor source canister
05/14/2010WO2010053866A2 Reaction chamber
05/14/2010WO2010053804A2 Endpoint control of multiple-wafer chemical mechanical polishing
05/14/2010WO2010053778A1 Application of a self-assembled monolayer as an oxide inhibitor
05/14/2010WO2010053720A2 Methods of forming a plurality of transistor gates, and methods of forming a plurality of transistor gates having at least two different work functions
05/14/2010WO2010053648A2 Substrate holder with varying density
05/14/2010WO2010053454A1 In-situ melt and reflow process for forming flip-chip interconnections and system thereof
05/14/2010WO2010053451A2 System and method for engaging singulated subtrates
05/14/2010WO2010053280A2 Apparatus and method for wet-processing object, and fluid diffusion plate and barrel used therein
05/14/2010WO2010053277A2 Method for manufacturing micro structure using x-ray exposure
05/14/2010WO2010053231A1 Device for forming surface pattern on fluid, and forming method thereof
05/14/2010WO2010053173A1 Apparatus and method for controlling temperature of semiconductor wafer
05/14/2010WO2010053171A1 Switching element and method for manufacturing same
05/14/2010WO2010053149A1 Substrate processing apparatus
05/14/2010WO2010053135A1 Al alloy film for display device, display device and sputtering target
05/14/2010WO2010053125A1 Film-forming apparatus, film-forming method and semiconductor device
05/14/2010WO2010053114A1 Circuit element
05/14/2010WO2010053094A1 Compound semiconductor manufacturing device, compound semiconductor manufacturing method, and jig for manufacturing compound semiconductor
05/14/2010WO2010053081A1 Apparatus for adhering anisotropic conductive film
05/14/2010WO2010053040A1 Electron beam type substrate inspecting apparatus
05/14/2010WO2010053039A1 Initialization method for a magnetic storage element
05/14/2010WO2010052990A1 Abrasive, polishing method, method for manufacturing semiconductor integrated circuit device
05/14/2010WO2010052983A1 Abrasive composition and method for manufacturing semiconductor integrated circuit device
05/14/2010WO2010052961A1 Imaging optical system, exposure apparatus and device manufacturing method
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