Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
09/2010
09/30/2010WO2010111601A2 Methods of forming printable integrated circuit devices and devices formed thereby
09/30/2010WO2010111590A2 System and method for improved testing of electronic devices
09/30/2010WO2010111581A1 Buffer layer to enhance photo and/or laser sintering
09/30/2010WO2010111453A1 Method for forming a high-k gate stack with reduced effective oxide thickness
09/30/2010WO2010111313A1 Chemical vapor deposition method
09/30/2010WO2010111291A2 Point of use recycling system for cmp slurry
09/30/2010WO2010111286A2 High temperature thin film transistor on soda lime glass
09/30/2010WO2010111084A2 Poly(ethylene glycol) and poly(ethylene oxide) by initiated chemical vapor deposition
09/30/2010WO2010111083A2 Structure and method for forming a salicide on the gate electrode of a trench-gate fet
09/30/2010WO2010111081A1 Interconnect structure for a semiconductor device with a resilient stress absorber and related method of manufacture
09/30/2010WO2010111072A2 Methods, devices, and systems relating to a memory cell having a floating body
09/30/2010WO2010111055A2 Anchoring inserts, electrode assemblies, and plasma processing chambers
09/30/2010WO2010111010A1 Light emitting diode source with protective barrier
09/30/2010WO2010110990A2 Force reaction compensation system
09/30/2010WO2010110987A2 Methods of forming patterns on substrates
09/30/2010WO2010110904A1 Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket
09/30/2010WO2010110903A1 Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile
09/30/2010WO2010110902A1 Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses
09/30/2010WO2010110901A1 Fabrication and structure of asymmetric field-effect transistors using l-shaped spacers
09/30/2010WO2010110900A1 Structure and fabrication of field-effect transistor having source/drain extension defined by multiple local concentration maxima
09/30/2010WO2010110895A1 Configuration and fabrication of semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants
09/30/2010WO2010110894A1 Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions
09/30/2010WO2010110892A1 Configuration and fabrication of semiconductor structure having extended-drain field-effect transistor
09/30/2010WO2010110890A1 Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone
09/30/2010WO2010110878A1 Plasma etching method
09/30/2010WO2010110866A1 Sea of pillars
09/30/2010WO2010110856A1 Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque mram devices
09/30/2010WO2010110847A2 Compositions and methods for removing organic substances
09/30/2010WO2010110834A1 Abrasive tool for use as a chemical mechanical planarization pad conditioner
09/30/2010WO2010110803A1 Switchable junction with intrinsic diode
09/30/2010WO2010110615A2 Source supplying unit, method for supplying source, and thin film depositing apparatus
09/30/2010WO2010110558A2 In-line heat treatment apparatus
09/30/2010WO2010110551A2 Chemical vapor deposition reactor for preparation of polysilicon
09/30/2010WO2010110546A2 Slit type supersonic nozzle and surface treatment device having the same
09/30/2010WO2010110535A2 Reflectance distribution curve modeling method, thickness measurement scheme and thickness measurement reflectometer using same
09/30/2010WO2010110489A1 Substrate for growing group-iii nitride semiconductors, epitaxial substrate for group-iii nitride semiconductors, group-iii nitride semiconductor element, stand-alone substrate for group-iii nitride semiconductors, and methods for manufacturing the preceding
09/30/2010WO2010110472A1 Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same and pattern forming method
09/30/2010WO2010110463A1 POLISHING METHOD, POLISHING APPARATUS AND GaN WAFER
09/30/2010WO2010110445A1 Semiconductor device, and apparatus and method for manufacturing semiconductor device
09/30/2010WO2010110365A1 Factor analysis apparatus and factor analysis method
09/30/2010WO2010110323A1 Polymer, hydrogen additive, resin composition, resin film, and electronic component
09/30/2010WO2010110309A1 Vacuum processing method and vacuum processing apparatus
09/30/2010WO2010110297A1 Magnetic sensor and magnetic-storage device
09/30/2010WO2010110263A1 Method for forming metal nitride film, and storage medium
09/30/2010WO2010110253A1 Mosfet and method for manufacturing mosfet
09/30/2010WO2010110252A1 Mosfet and method for manufacturing mosfet
09/30/2010WO2010110246A1 Semiconductor device
09/30/2010WO2010110237A1 Substrate provided with multilayer reflection film for reflective mask, reflective mask blank, and methods for manufacturing the substrate and the mask blank
09/30/2010WO2010110233A1 Semiconductor wafer and semiconductor device manufacturing method
09/30/2010WO2010110179A1 Active element substrate and manufacturing method thereof, and display apparatus using active element substrate manufactured by this manufacturing method
09/30/2010WO2010110169A1 Mounting table structure and treatment device
09/30/2010WO2010110158A1 Plasma processing apparatus and method for manufacturing photovoltaic element using same
09/30/2010WO2010110139A1 Manufacturing method for substrate for mask blank, mask blank, photo mask, and semiconductor device
09/30/2010WO2010110137A1 Wafer retainer for improving a method of connecting a high-frequency electrode, and semiconductor production device on which the wafer retainer is mounted
09/30/2010WO2010110123A1 Method for treating substrate, and process for manufacturing crystalline silicon carbide (sic) substrate
09/30/2010WO2010110121A1 Curable composition for nanoimprinting and cured object
09/30/2010WO2010110099A1 Plasma processing apparatus and method of producing amorphous silicon thin film using same
09/30/2010WO2010110080A1 Microwave plasma processing apparatus
09/30/2010WO2010110069A1 Resin paste for die bonding, process for producing semiconductor device using the resin paste, and semiconductor device
09/30/2010WO2010110052A1 Sputter deposition device
09/30/2010WO2010110044A1 Method for removing subject to be processed, and apparatus for processing subject to be processed
09/30/2010WO2010110029A1 Magnetoresistive element and magnetic memory
09/30/2010WO2010109963A1 Nonvolatile programmable logic switch
09/30/2010WO2010109915A1 Vapor deposition apparatus and vapor deposition method
09/30/2010WO2010109905A1 Glass composition, electrically conductive paste composition comprising same, electrode wiring member, and electronic component
09/30/2010WO2010109903A1 Glass composition and covering and sealing members using same
09/30/2010WO2010109892A1 Semiconductor substrate, semiconductor device, and method of producing semiconductor substrate
09/30/2010WO2010109873A1 Silicon wafer and method for manufacturing same
09/30/2010WO2010109859A1 Image forming method and photocurable composition
09/30/2010WO2010109857A1 Component positioning device, and component positioning method using component positioning device
09/30/2010WO2010109853A1 Silicon wafer and method of manufacturing same
09/30/2010WO2010109848A1 Plasma processing apparatus and plasma processing method
09/30/2010WO2010109842A1 Film with attached metal layer for electronic components, production method thereof, and applications thereof
09/30/2010WO2010109824A1 Method of producing semiconductor device
09/30/2010WO2010109750A1 Method for manufacturing sapphire substrate, and semiconductor device
09/30/2010WO2010109746A1 Semiconductor device and method for manufacturing same
09/30/2010WO2010109740A1 Test device, test method, and production method
09/30/2010WO2010109739A1 Manufacturing apparatus, manufacturing method and package device
09/30/2010WO2010109712A1 Insulating substrate for semiconductor device, and semiconductor device
09/30/2010WO2010109705A1 Probe, and probe manufacturing method
09/30/2010WO2010109703A1 Electronic device, substrate, and method for manufacturing electronic device
09/30/2010WO2010109693A1 Coated copper wire for ball bonding
09/30/2010WO2010109655A1 Electron beam lithography system and electron beam lithographing method
09/30/2010WO2010109647A1 Multicolumn electronic beam lithography mask retainer and multicolumn electronic beam lithography system
09/30/2010WO2010109596A1 Semiconductor device
09/30/2010WO2010109574A1 Stage device and method for cleaning stage
09/30/2010WO2010109572A1 Semiconductor device
09/30/2010WO2010109566A1 Semiconductor device and method for manufacturing same
09/30/2010WO2010109430A2 Apparatus and method for manufacturing an integrated circuit
09/30/2010WO2010109373A2 Method and apparatus for reduction of voltage potential spike during dechucking
09/30/2010WO2010108996A1 Device and method to conduct an electrochemical reaction on a surface of a semiconductor substrate
09/30/2010WO2010108978A1 Rectifier diode
09/30/2010WO2010108957A1 Method for producing electrical interconnections made of carbon nanotubes
09/30/2010WO2010108905A1 Improvements in or relating to pcb-mounted integrated circuits
09/30/2010WO2010108807A1 Soi radio frequency switch with enhanced electrical isolation
09/30/2010WO2010108462A1 Bernoulli gripper apparatus having at least one bernoulli gripper
09/30/2010WO2010090779A3 Methods for preventing precipitation of etch byproducts during an etch process and/or a subsequent rinse process
09/30/2010WO2010090778A3 Cutting blade for a wire bonding system
09/30/2010WO2010088039A3 Dual high-k oxides with sige channel
09/30/2010WO2010083014A3 Floating-body/gate dram cell
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