| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 01/26/2011 | CN101960573A Silicon-germanium-carbon semiconductor structure |
| 01/26/2011 | CN101960572A Devices with cavity-defined gates and methods of making the same |
| 01/26/2011 | CN101960571A Method of treating semiconductor element |
| 01/26/2011 | CN101960570A Method for manufacturing semiconductor device and semiconductor device |
| 01/26/2011 | CN101960569A Plasma processing method |
| 01/26/2011 | CN101960568A Gas flow equalizer plate suitable for use in a substrate process chamber |
| 01/26/2011 | CN101960567A Method and apparatus for removing polymer from a substrate |
| 01/26/2011 | CN101960566A Method and apparatus for etching silicon-containing films |
| 01/26/2011 | CN101960565A Semiconductor substrate contact via |
| 01/26/2011 | CN101960564A Heated valve manifold for ampoule |
| 01/26/2011 | CN101960563A Microcrystalline silicon thin film transistor |
| 01/26/2011 | CN101960561A Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface |
| 01/26/2011 | CN101960560A Methods of smoothing oxide spacer |
| 01/26/2011 | CN101960559A UV nanoimprint method, resin replica mold and method for producing the same, magnetic recording medium and method for producing the same, and magnetic recording/reproducing apparatus |
| 01/26/2011 | CN101960558A Method for manufacturing bonded wafer |
| 01/26/2011 | CN101960557A Cold joining device |
| 01/26/2011 | CN101960556A Method for curing a porous low dielectric constant dielectric film |
| 01/26/2011 | CN101960519A Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
| 01/26/2011 | CN101960388A Semiconductor surface treating agent composition and method for treating semiconductor surface using the semiconductor surface treating agent composition |
| 01/26/2011 | CN101960385A Multi-photon exposure system |
| 01/26/2011 | CN101960383A Method for processing work having photoresist layer |
| 01/26/2011 | CN101960336A Method for manufacturing diffractive optical element |
| 01/26/2011 | CN101960239A Heat exchanging device |
| 01/26/2011 | CN101960056A AlxGa(1-x)As substrate, epitaxial wafer for infrared LED, infrared LED, method for production of AlxGa(1-x)As substrate, method for production of epitaxial wafer for infrared LED, and method for production of infrared LED |
| 01/26/2011 | CN101960045A Compound material, method of producing the same and apparatus for producing the same |
| 01/26/2011 | CN101959983A CMP slurry and a polishing method using the same |
| 01/26/2011 | CN101959980A Antireflective coating compositions |
| 01/26/2011 | CN101959933A Semiconductor nanoparticle capping agents |
| 01/26/2011 | CN101959922A Curable epoxy composition, anisotropic conductive material and connection structure |
| 01/26/2011 | CN101959909A Monomer having electron-withdrawing substituent and lactone skeleton, polymeric compound, and photoresist composition |
| 01/26/2011 | CN101959908A Radiation-sensitive composition, polymer and monomer |
| 01/26/2011 | CN101959841A (meth)acrylate compound, curable composition using the same, composition for optical nanoimprint, cured product of the curable composition, and method for producing the cured product |
| 01/26/2011 | CN101959790A Fabrication of atomic scale devices |
| 01/26/2011 | CN101959788A Sheet structure, semiconductor device and method of growing carbon structure |
| 01/26/2011 | CN101959776A Noncontact transfer apparatus |
| 01/26/2011 | CN101959647A Carrier for double-side polishing device, and double-side polishing device and double-side polishing method that use same |
| 01/26/2011 | CN101959620A Ultrasonic washing apparatus, and ultrasonic washing method |
| 01/26/2011 | CN101959594A Surface treatment apparatus |
| 01/26/2011 | CN101959374A Method for manufacturing multilayer printed circuit board |
| 01/26/2011 | CN101958402A Tightness-adjustable substrate transmission device |
| 01/26/2011 | CN101958380A Solid crystal machine head bonding mechanism |
| 01/26/2011 | CN101958379A Nickel tin bonding system with semiconductor wafers and devices |
| 01/26/2011 | CN101958375A Nitride semiconductor structure and manufacturing method thereof |
| 01/26/2011 | CN101958374A Light-emitting component and manufacturing method thereof |
| 01/26/2011 | CN101958346A Lateral double-diffused metal-oxide semiconductor field effect transistor and manufacturing method thereof |
| 01/26/2011 | CN101958345A Compound semiconductor device and method for manufacturing the same |
| 01/26/2011 | CN101958344A Green field effect transistor and manufacturing method thereof |
| 01/26/2011 | CN101958343A Triode and manufacturing method thereof |
| 01/26/2011 | CN101958342A Gate structure and manufacturing method thereof |
| 01/26/2011 | CN101958341A Scaling EOT by eliminating interfacial layers from high-k/metal gates of MOS devices |
| 01/26/2011 | CN101958339A Organic light emitting display device and fabricationg method thereof |
| 01/26/2011 | CN101958338A Phase change random access memory and manufacturing method and programming method thereof |
| 01/26/2011 | CN101958337A Phase change random access memory and manufacturing method thereof |
| 01/26/2011 | CN101958336A Phase change random access memory and manufacturing method thereof |
| 01/26/2011 | CN101958335A Phase change random access memory and manufacturing method and programming method thereof |
| 01/26/2011 | CN101958333A Semiconductor luminescent device and manufacturing method thereof |
| 01/26/2011 | CN101958328A CMOS (Complementary Metal Oxide Semiconductor) device and manufacturing method thereof |
| 01/26/2011 | CN101958327A Monopolar CMOS (Complementary Metal Oxide Semiconductor) device and manufacture method thereof |
| 01/26/2011 | CN101958326A SONOS (Silicon Oxide Nitride Oxide Semiconductor) flash memory unit and formation method thereof |
| 01/26/2011 | CN101958325A SONOS (Silicon Oxide Nitride Oxide Semiconductor) flash memory unit and formation method thereof |
| 01/26/2011 | CN101958324A SONOS (Silicon Oxide Nitride Oxide Semiconductor) flash memory unit and formation method thereof |
| 01/26/2011 | CN101958323A SONOS (Silicon Oxide Nitride Oxide Semiconductor) flash memory unit and formation method thereof |
| 01/26/2011 | CN101958319A Deep groove structure among high-voltage semiconductor elements and manufacture method thereof |
| 01/26/2011 | CN101958318A Display panel and display panel device including the same |
| 01/26/2011 | CN101958317A Wafer structure and manufacturing method thereof |
| 01/26/2011 | CN101958314A Manufacture method and usage of folded system-in-package |
| 01/26/2011 | CN101958311A Semiconductor structure and forming method |
| 01/26/2011 | CN101958310A Semiconductor device and formation method thereof |
| 01/26/2011 | CN101958308A Semiconductor device |
| 01/26/2011 | CN101958307A Power semiconductor module and method of manufacturing the same |
| 01/26/2011 | CN101958306A Embedded circuit substrate and manufacturing method thereof |
| 01/26/2011 | CN101958305A Double-side graph chip forward module package structure and package method thereof |
| 01/26/2011 | CN101958304A Double-side graph chip direct-put module package structure and package method thereof |
| 01/26/2011 | CN101958303A Double-side graph chip forward single package structure and package method thereof |
| 01/26/2011 | CN101958302A Double-side graph chip inverse single package structure and package method thereof |
| 01/26/2011 | CN101958301A Double-side graph chip direct-put single package structure and package method thereof |
| 01/26/2011 | CN101958300A Double-sided graphic chip inversion module packaging structure and packaging method thereof |
| 01/26/2011 | CN101958299A Method for packaging single double-sided graphic chip by way of directly arranging and then sequentially plating and etching |
| 01/26/2011 | CN101958298A Semiconductor device and manufacturing method of the same |
| 01/26/2011 | CN101958294A Multi-connect lead |
| 01/26/2011 | CN101958293A Semiconductor wiring assembly, semiconductor composite wiring assembly, and resin-sealed semiconductor device |
| 01/26/2011 | CN101958292A Printed circuit board, encapsulation piece and manufacture methods thereof |
| 01/26/2011 | CN101958290A Semiconductor device and method for manufacturing same |
| 01/26/2011 | CN101958286A Method for packaging white LED with variable color temperature |
| 01/26/2011 | CN101958285A Method for manufacturing PIP capacitor in BiCMOS process |
| 01/26/2011 | CN101958284A Method for improving current carrier migration rate of MOS transistor |
| 01/26/2011 | CN101958283A Method and structure for obtaining structure containing alternately arranged P-type and N-type semiconductor thin layers |
| 01/26/2011 | CN101958282A LDMOS (Lateral Diffusion Metal Oxide Semiconductor) manufacturing method |
| 01/26/2011 | CN101958281A Soft thin film transferring device and soft thin film transferring method |
| 01/26/2011 | CN101958280A Organic electroluminescent display device and method of fabricating the same |
| 01/26/2011 | CN101958279A Method for improving width uniformity of grooves |
| 01/26/2011 | CN101958278A Manufacturing method of semiconductor device |
| 01/26/2011 | CN101958277A Method for forming metal wiring groove |
| 01/26/2011 | CN101958276A Remediation method for unsuccessfully formed interconnected through holes on wafer |
| 01/26/2011 | CN101958275A Contact hole forming method |
| 01/26/2011 | CN101958274A Method for constructing through hole on chip |
| 01/26/2011 | CN101958273A Method for constructing copper wire on wafer and chemical mechanical polishing (CMP) method for copper |
| 01/26/2011 | CN101958272A Aluminum wire forming method |
| 01/26/2011 | CN101958271A Method for preparing hanging strained silicon film by utilizing silicon on insulator |
| 01/26/2011 | CN101958270A Method for preparing ultrathin strain material-on-insulator |