Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
12/2005
12/21/2005EP1606800A1 Production of nanoparticulate thin films
12/21/2005EP1435101B1 Spin-valve magnetoresistive device with enhanced performance
12/21/2005EP1305795A4 All metal giant magnetoresistive memory
12/15/2005US20050276997 Magnetic detecting element having antiferromagnetic film having predetermined space in track width direction and method for manufacturing the same
12/15/2005US20050276996 magnetic layer, a specular layer of a metal oxide, a back layer made of Au, Cu, AuCu, AgCu, AuAgCu or alloy; decreased thickness of while maintaining a small coercive field and a small interlayer coupling field between magnetic (pinned) layer and and a second magnetic (free) layer; increased output
12/15/2005US20050274998 Method and apparatus for oxidizing conductive redeposition in TMR sensors
12/14/2005EP1605475A1 Magnetic film for magnetic device
12/14/2005CN1707624A Perpendicular magnetic recording medium, method of producing the same, and magnetic storage device
12/14/2005CN1707616A Magnetoresistance effect film and magnetoresistance effect head
12/14/2005CN1707614A Magnetic film for magnetic device
12/13/2005US6975110 Magnetic sensor utilizing magnetoresistance effect, method for driving magnetic sensor utilizing magnetoresistance effect and magnetic recording systems
12/08/2005WO2005117512A1 Magnetically shielded assembly
12/08/2005WO2005117128A1 Tunnel junction barrier layer comprising a diluted semiconductor with spin sensitivity
12/08/2005WO2005115531A2 Novel nanomagnetic particles
12/08/2005US20050271904 Electrodeposition of FeCoNiV films with high resistivity and high saturation magnetization
12/08/2005US20050271901 Magnetic film for magnetic device
12/08/2005US20050270705 Magneto-resistive element, thin film magnetic head, magnetic head and magnetic recording/reproducing apparatus
12/08/2005US20050270704 Magnetoresistance effect film and magnetoresistance effect head
12/08/2005US20050270022 Magnetoresistive layer system and sensor element having this layer system
12/08/2005DE10164603B4 Verfahren zur Erzeugung einer Eisennitriddünnschicht und Eisennitriddünnschicht Method for producing a Eisennitriddünnschicht and Eisennitriddünnschicht
12/07/2005EP1601805A2 Method of modifying iron based glasses to increase crytallization temperature without changing melting temperature
12/07/2005EP1601629A1 Ferromagnetic material
12/06/2005US6972992 Tunneling magnetoresistive random access memory with a multilayer fixed layer
12/06/2005US6972934 Synthetic anti-parallel spin valve with thin AFM layer for very high density application
12/06/2005US6971391 Protective assembly
12/01/2005WO2005114683A1 Magnetisable composition and magnetic material comprising the same
12/01/2005US20050266274 Magnetic sensor using half-metal for pinned magnetic layer
12/01/2005US20050264958 Magnetoresistive medium including nanowires
12/01/2005US20050264954 Free layer for CPP GMR having iron rich NiFe
12/01/2005US20050264953 Magneto-resistive element, magnetic head and megnetic storage apparatus
12/01/2005US20050264952 Magneto-resistive element, magnetic head and magnetic storage apparatus
11/2005
11/30/2005EP1600952A2 Thermally assisted recording system
11/30/2005CN1703739A Current-perpendicular-to-the-plane structure magnetoresistive element and head slider
11/30/2005CN1229880C Magnetic resistance element
11/30/2005CN1229656C Magnetic thin film interference device or pigment and method of making it, printing ink or coating composition and secret document containing said magnetic thin fim interference device, and applicatio
11/29/2005US6970376 Magnetic random access memory and method of writing data in magnetic random access memory
11/29/2005US6970333 Layer system having an increased magnetoresistive effect and use of the same, wherein a first layer of an artificial antiferromagnet has a relatively low cobalt content
11/29/2005US6970332 Magnetoresistive head with spin valve film magnetic sensor element
11/29/2005US6970324 Thin film head with nickel-iron alloy non-magnetic substratum between non-magnetic gap layer and upper magnetic pole layer
11/29/2005US6970323 Micro device including a thin film wiring structure and method for fabricating the same
11/29/2005US6969895 MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture
11/24/2005WO2005112086A1 Manganese doped magnetic semiconductors
11/24/2005WO2005112085A1 Copper doped magnetic semiconductors
11/24/2005WO2005110217A1 Magnetic resonance imaging coated assembly
11/24/2005US20050260774 Method of incorporating magnetic materials in a semiconductor manufacturing process
11/24/2005US20050260772 A method of forming a magnetic tunneling junction (mtj) mram device and a tunneling magnetoresistive (tmr) read head
11/24/2005US20050260332 Formation of combinatorial arrays of materials using solution-based methodologies
11/24/2005US20050259343 Thermally assisted recording system
11/24/2005US20050258469 Magnetic memory with self-aligned magnetic keeper structure
11/24/2005US20050258416 Switching devices based on half-metals
11/24/2005US20050257366 Method for preventing magnetic damage to a GMR head during back-end processing
11/23/2005EP1598865A1 Mram with a novel buffer layer
11/23/2005EP1598834A2 Nanomagnetic materials
11/23/2005CN1700324A Thermally assisted recording system
11/23/2005CN1228764C Magneto-resistance element with current perpendicular to membrane surface structure
11/22/2005US6967824 Hard bias magnetic structure including a conductive layer and a transition layer and a seed layer
11/22/2005US6967366 Magnetoresistive random access memory with reduced switching field variation
11/17/2005WO2005109517A2 Semiconductor device using location and sign of the spin of electrons
11/17/2005WO2005109454A1 Ferromagnetic influence on quantum dots
11/17/2005US20050255337 Perpendicular magnetic recording medium, method of producing the same, and magnetic storage device
11/17/2005US20050254289 Magnetic memory device and method of manufacturing the same
11/17/2005US20050254288 Magnetic random access memory and method of writing data in magnetic random access memory
11/17/2005US20050254181 Free layer design for CPP GMR enhancement
11/17/2005US20050253128 Techniques for spin-flop switching with offset field
11/17/2005US20050252576 For ice and beverage dispensers; fluid conveying tubes formed into a coil pack held in place by retaining wires
11/16/2005EP1594926A1 Multilayer magnetic reflecting pigment flakes and foils
11/16/2005CN1227649C Magnetic sensor, magnetic head and magnetic recording device
11/15/2005US6965138 Magnetic memory device and method of manufacturing the same
11/10/2005US20050248980 MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture
11/10/2005US20050248888 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane gmr heads
11/09/2005EP1593759A1 Substrate for forming magnetic garnet single-crystal film, optical device and process for producing the same
11/09/2005EP1593168A1 Two-step magnetic tunnel junction stack deposition
11/09/2005EP1129366B1 Magnetoresistive sensor or memory elements with decreased magnetic switch field
11/08/2005US6962663 Process for manufacturing a read head
11/03/2005WO2005104240A1 Magneto-electric field effect transistor for spintronic applications
11/03/2005US20050244679 Perpendicular magnetic recording medium, manufacturing process of the same, and magnetic recording/reproducing apparatus using the same
11/03/2005US20050242407 Magnetic random access memory
11/02/2005CN1225726C Magnetoresistance effect film and spin valve reproducing head and method for manufacturing same
11/02/2005CN1225725C Ferromagnetic stack material with reliable uniaxial anisotropy
11/01/2005US6961223 Spin-valve thin-film magnetic element without sensing current shunt and thin-film magnetic head including the same
11/01/2005US6960480 Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head
11/01/2005US6960397 substrate, zirconium-alumina lower and/or upper layer, ferromagnetic, anti-ferromagnetic, and tunneling barrier layers; improved thermal stability; disk drives
10/2005
10/27/2005WO2005101941A1 Electromagnetic wave absorber
10/27/2005WO2005101376A1 Spin valve magnetoresistive sensor in current perpendicular to plane scheme
10/27/2005US20050237793 Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling
10/27/2005US20050237790 Antiferromagnetically stabilized pseudo spin valve for memory applications
10/27/2005US20050237677 Thin film magnetic head, head gimbal assembly, and hard disk drive
10/26/2005EP1589594A1 Cpp-type giant manetoresistance effect element and magnetic component and magnetic device using it
10/20/2005WO2005098953A1 Magnetization direction control method and mram using the same
10/20/2005WO2005098095A1 Method for preparing multi-component alloy onto substrate by molten salt electrolysis
10/20/2005US20050233163 Titanium dioxide - Cobalt magnetic film and method of its manufacture
10/20/2005US20050231857 Method of manufacturing spin valve film
10/20/2005US20050231856 Xenon ion beam to improve track width definition
10/20/2005US20050231854 Magnetoresistance effect film and method of manufacturing the same
10/19/2005EP1586913A2 Magnetoresistance effect film and method of manufacturing the same
10/19/2005EP1586135A1 Antenna core
10/19/2005EP1552526A4 Magnetic element utilizing spin transfer and an mram device using the magnetic element
10/19/2005CN1685536A CPP strucure magnetoresistance effect device and head slider
10/19/2005CN1685402A Multilayer structure film and process for producing the same
10/19/2005CN1684151A Perpendicular magnetic recording medium, manufacturing process of the same, and magnetic recording/reproducing apparatus using the same
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