G11C - Static stores - Patents Sitemap

More topics under "G11C - Static stores" (278,845)
G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
G11C 14 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down (1,872)
G11C 15 - Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores (3,555)
G11C 16 - Erasable programmable read-only memories (44,373)
G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (10,133)
G11C 19 - Digital stores in which the information is moved stepwise, e.g. shift registers (6,160)
G11C 21 - Digital stores in which the information circulates (125)
G11C 23 - Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor (468)
G11C 25 - Digital stores characterised by the use of flowing media; Storage elements therefor (19)
G11C 27 - Electric analogue stores, e.g. for storing instantaneous values (3,965)
G11C 29 - Checking stores for correct operation; Testing stores during standby or offline operation (30,524)
G11C 5 - Details of stores covered by group (20,391)
G11C 7 - Arrangements for writing information into, or reading information out from, a digital store (53,197)
G11C 8 - Arrangements for selecting an address in a digital store (19,368)
G11C 99 - Subject matter not provided for in other groups of this subclass (24)

Patents for G11C - Static stores (462)
01/2004
01/08/2004	US20040004861 Differential EEPROM using pFET floating gate transistors
11/2003
11/11/2003	CA2302014C A read-only memory and read-only memory devices
11/06/2003	US20030206441 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
08/2003
08/20/2003	CN1437721A Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
07/2003
07/17/2003	US20030132470 Stacked memory cell having diffusion barriers
07/03/2003	US20030126201 Efficient storage of data files received in a non-sequential manner
06/2003
06/17/2003	US6580638 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
05/2003
05/01/2003	WO2002091382A3 A memory matrix and method of operating the same
04/2003
04/17/2003	WO2002033706A3 Noise suppression for open bit line dram architectures
04/17/2003	US20030072172 Noise suppression for open bit line DRAM architectures
04/10/2003	WO2003030180A1 Flash management system using only sequential write
04/03/2003	US20030065876 Flash management system using only sequential Write
03/2003
03/27/2003	WO2003025936A2 Method for identifying memory errors in electronic braking systems, computer system and the use thereof
12/2002
12/17/2002	US6496402 Noise suppression for open bit line DRAM architectures
11/2002
11/14/2002	WO2002091382A2 A memory matrix and method of operating the same
11/14/2002	US20020169022 Method and apparatus for write protecting a gaming storage medium
11/13/2002	EP1256881A2 Method and apparatus for write protecting a gaming storage medium
11/09/2002	CA2365442A1 Method and apparatus for write protecting a gaming storage medium
10/2002
10/24/2002	US20020154543 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
08/2002
08/20/2002	US6438719 Memory supervision
07/2002
07/30/2002	US6426893 Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
07/18/2002	WO2001061703A3 Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
07/04/2002	US20020087823 Real time local and remote management of data files and directories and method of operating the same
06/2002
06/06/2002	US20020069337 Memory matrix and method of operating the same
06/06/2002	US20020069334 Switched multi-channel network interfaces and real-time streaming backup
06/06/2002	US20020069318 Real time application accelerator and method of operating the same
06/06/2002	US20020069317 E-RAID system and method of operating the same
04/2002
04/30/2002	US6380597 Read-only memory and read-only memory device
04/30/2002	US6380553 Multilayer matrix-addressable logic device with a plurality of individually matrix-addressable and stacked thin films of an active material
04/25/2002	WO2002033706A2 Noise suppression for open bit line dram architectures
02/2002
02/06/2002	EP1010181B1 A read-only memory and read-only memory devices
02/06/2002	EP1010180B1 A read-only memory and read-only memory device
11/2001
11/08/2001	US20010038104 Multilayer matrix-addressable logic device with a plurality of individually matrix-addressable and stacked thin films of an active material
08/2001
08/23/2001	WO2001061703A2 Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
07/2001
07/10/2001	US6259622 Two bit per cell ROM using a two phase current sense amplifier
06/2001
06/06/2001	EP1104579A1 Memory supervision
05/2001
05/22/2001	US6236587 Read-only memory and read-only memory devices
03/2001
03/20/2001	US6204722 Electronic circuit for generating a stable voltage signal for polarizing during a reading step UPROM memory cells operating at low feed voltage
12/2000
12/20/2000	CN1277724A A read-only memory and read-only memory device
12/20/2000	CN1277723A A read-only memory and read-only memory devices
06/2000
06/21/2000	EP1010181A1 A read-only memory and read-only memory devices
06/21/2000	EP1010180A1 A read-only memory and read-only memory device
03/2000
03/02/2000	WO2000011678A1 Memory supervision
10/1999
10/26/1999	US5973965 Method for operating a SRAM MOS transistor memory cell
06/1999
06/02/1999	EP0868725B1 Method of operating an sram mos transistor storage cell
04/1999
04/01/1999	WO1999016076A2 High density storage magazine for compact discs
03/1999
03/25/1999	WO1999014763A1 A read-only memory and read-only memory devices
03/25/1999	WO1999014762A1 A read-only memory and read-only memory device
10/1998
10/07/1998	EP0868725A2 Method of operating an sram mos transistor storage cell
08/1997
08/21/1997	WO1997023878A3 Method of operating an sram mos transistor storage cell
07/1997
07/03/1997	WO1997023878A2 Method of operating an sram mos transistor storage cell
07/03/1997	DE19548053A1 Verfahren zum Betrieb einer SRAM MOS-Transistor Speicherzelle Method for operating a SRAM MOS transistor memory cell
03/1996
03/27/1996	EP0636258B1 Integrated semiconductor memory with redundancy arrangement
10/1995
10/17/1995	US5459690 Integrated semiconductor memory with redundancy arrangement
02/1995
02/01/1995	EP0636258A1 Integrated semiconductor memory with redundancy arrangement.
10/1993
10/28/1993	WO1993021578A1 Integrated semiconductor memory with redundancy arrangement
09/1993
09/15/1993	CN1022146C Semiconductor memory array having interdigitated bit-line structure
07/1991
07/10/1991	CN1052964A Semiconductor memory array having interdigitated bit-line structure
12/1984
12/11/1984	CA1179428A1 Earom cell matrix and logic arrays with common memory gate
04/1983
04/19/1983	US4380804 Earom cell matrix and logic arrays with common memory gate
02/1983
02/08/1983	CA1141029A1 Nonvolatile static random access memory devices
07/1982
07/08/1982	WO1982002275A1 Programmable memory cell and array

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