Patents
Patents for G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (10,133)
03/2015
03/05/2015US20150063001 Semiconductor device
03/05/2015US20150063000 Semiconductor device and control method of the same
03/05/2015US20150062998 Programmable memory
03/05/2015US20150062997 Fuse information storage circuit of semiconductor apparatus
03/05/2015US20150062996 Embedded selector-less one-time programmable non-volatile memory
03/04/2015EP2843665A1 Mask read-only memory
03/04/2015EP2843664A1 Mask red-only memory
03/03/2015US8971137 Bit based fuse repair
02/2015
02/26/2015US20150058565 Apparatus and method for compression of configuration data
02/26/2015US20150058563 Multi-core fuse decompression mechanism
02/26/2015US20150055429 Apparatus and method for compression and decompression of microprocessor configuration data
02/26/2015US20150055428 Microprocessor mechanism for decompression of cache correction data
02/26/2015US20150055427 Multi-core microprocessor configuration data compression and decompression system
02/26/2015US20150055395 Extended fuse reprogrammability mechanism
02/26/2015US20150054543 Apparatus and method for rapid fuse bank access in a multi-core processor
02/25/2015EP2840507A2 Apparatus and method for configurable redundant fuse banks
02/24/2015US8964493 Defective memory column replacement with load isolation
02/24/2015US8964489 Semiconductor memory device capable of optimizing an operation time of a boosting circuit during a writing period
02/24/2015US8964456 Semiconductor memory with similar RAM and ROM cells
02/24/2015US8964444 One-time programmable memory, integrated circuit including same, and method therefor
02/24/2015US8963275 Resistive-switching device capable of implementing multiary addition operation and method for multiary addition operation
02/19/2015US20150049546 Method of programming fuse cells and repairing memory device using the programmed fuse cells
02/19/2015DE102004004596B4 Verfahren zur Bestimmung des Programmierzustands einer Antifuse A method for determining the programming state of an antifuse
02/17/2015US8958232 Method and apparatus for read assist to compensate for weak bit
02/12/2015US20150043288 Semiconductor memory device having fuse cell array
02/12/2015US20150043265 N-well switching circuit
02/12/2015DE102006033649B4 Speicherbauelement und Verfahren zum Konfigurieren eines Speicherbauelements Memory device and method for configuring a memory device
02/11/2015CN104347637A 反熔丝单次可编程存储胞及存储器的操作方法 Operation single programmable antifuse memory cell and memory
02/10/2015US8953404 Semiconductor device having an electrical fuse element
02/10/2015US8953357 Semiconductor memory device
02/05/2015US20150036428 Method of operating incrementally programmable non-volatile memory
02/05/2015US20150036411 Semiconductor memory device
02/05/2015DE10353782B4 Dualzweck-Schieberegister Dual-purpose shift register
02/04/2015CN104332180A 存储器烧录接口电路及烧录方法 Memory programming interface circuit and burn method
02/03/2015US8947233 Methods and systems of a multiple radio frequency network node RFID tag
01/2015
01/29/2015US20150029778 Mask-programmed read only memory with enhanced security
01/29/2015US20150029777 Circuit and System of Using Junction Diode of MOS as Program Selector for Programmable Resistive Devices
01/29/2015US20150029776 Semiconductor device having a reduced area and enhanced yield
01/27/2015US8942034 System and method of programming a memory cell
01/22/2015US20150023088 Apparatuses and methods for sensing fuse states
01/21/2015CN104303235A 用于存储器设备的上电检测系统 Power-detection systems for memory devices
01/21/2015CN102237140B 熔丝程序化电路及熔丝的程序化方法 Procedural method fuses and fuse programmed circuit
01/20/2015US8936201 Integrated circuits with persistent data storage
01/15/2015US20150016174 Integrated circuits with programmable electrical connections and methods for fabricating the same
01/15/2015US20150016173 ROM Chip Manufacturing Structures
01/14/2015EP2823486A1 Voltage mode sensing for low power flash memory
01/14/2015EP2823485A1 Flash memory with integrated rom memory cells
01/14/2015CN104285255A 配置成在掉电事件期间保持在非编程状态的电路 Configured during power-down event held in a non-programmed state of the circuit
01/08/2015US20150009743 Low-Pin-Count Non-Volatile Memory Interface for 3D IC
01/08/2015US20150009742 Semiconductor memory device having improved fuse sensing reliability in slow power-up operation and method for reading fuse block thereby
01/07/2015CN104269188A 具有双单元结构的otp或mtp存储模块 Otp or mtp memory module with dual cell structure
01/07/2015CN104269187A 可以查空的双单元结构的otp或mtp存储模块 Otp or mtp memory module can check the empty two-unit structure
01/06/2015US8929121 Reference and read OTP sensors
01/01/2015US20150006826 Strap-based multiplexing scheme for memory control module
01/01/2015US20150003143 One-time programmable devices using junction diode as program selector for electrical fuses with extended area
01/01/2015US20150003142 Method and structure for reliable electrical fuse programming
01/01/2015US20150003141 Semiconductor memory device and repair method thereof
12/2014
12/30/2014US8923085 Low-pin-count non-volatile memory embedded in a integrated circuit without any additional pins for access
12/30/2014US8923070 FinFET based one-time programmable device
12/30/2014US8923044 MTP MTJ device
12/30/2014US8923030 On-die programmable fuses
12/30/2014US8923029 Field programmable read-only memory device
12/24/2014CN104246896A 存储器件、半导体单元及其操作方法和电子设备 Memory device, the semiconductor unit and its operation method and an electronic device
12/24/2014CN104246895A 用于低功率闪存存储器的电压模式感测 A flash memory for low power sensing voltage mode
12/24/2014CN104240764A 具有熔丝阵列的半导体器件及其操作方法 Semiconductor device and method of operation of the fuse array having
12/24/2014CN104240763A 电熔丝电路 Electric fuse circuit
12/24/2014CN104240762A 反熔丝结构及编程方法 Antifuse structure and programming methods
12/24/2014CN102292777B 减少存储器装置中的泄漏电流 Reducing the leakage current in the memory device
12/24/2014CN102262904B 多位元三维掩膜编程存储器 More than three-dimensional mask-programmable memory element
12/23/2014US8917569 Semiconductor apparatus transmitting fuse information and repair method thereof
12/23/2014US8917537 Inline fuses in programmable crossbar arrays
12/23/2014US8917533 Circuit and system for testing a one-time programmable (OTP) memory
12/23/2014US8916938 Three-dimensional writable printed memory
12/18/2014US20140369137 Embedded memory device and memory controller including the same
12/18/2014US20140369106 Semiconductor device with fuse array and operating method thereof
12/18/2014US20140369105 Generating output signal during read operation
12/17/2014CN101783181B 存储器装置及存储器存取方法 Memory devices and memory access method
12/16/2014US8913454 Programmable memory with restricted reprogrammability
12/16/2014US8913415 Circuit and system for using junction diode as program selector for one-time programmable devices
12/16/2014US8912052 Semiconductor device and structure
12/10/2014CN104200844A 一种带密码的otp烧写及读取方法 An otp programming and reading method with passwords
12/10/2014CN102484119B 带有具有倒圆拐角的多个支柱的交叉点非易失性存储器件及其制造方法 Crosspoint rounded corners having a plurality of columns of non-volatile memory device and manufacturing method with
12/10/2014CN102483948B 具有改进型存储器块切换的半导体存储器 A semiconductor memory improved memory block switching
12/09/2014US8908412 Array architecture for reduced voltage, low power, single poly EEPROM
11/2014
11/27/2014US20140347909 Semiconductor device and semiconductor memory device
11/25/2014US8897056 Pillar-shaped nonvolatile memory and method of fabrication
11/25/2014US8897055 Memory device, method of operating the same, and electronic device having the memory device
11/25/2014US8897054 ROM device with keepers
11/25/2014US8896088 Reliable electrical fuse with localized programming
11/20/2014US20140340955 One time programable memory cell and method for programing and reading a memory array comprising the same
11/20/2014US20140340954 Low-Pin-Count Non-Volatile Memory Interface with Soft Programming Capability
11/18/2014US8891328 Low voltage metal gate antifuse with depletion mode MOSFET
11/18/2014US8890233 3D memory array with improved SSL and BL contact layout
11/11/2014US8885433 Semiconductor device having fuse circuit
11/11/2014US8885384 Mask-programmed read-only memory with reserved space
11/11/2014US8884376 Large bit-per-cell three-dimensional mask-programmable read-only memory
11/04/2014US8879345 Microprocessor mechanism for decompression of fuse correction data
11/04/2014US8879299 Non-volatile memory cell containing an in-cell resistor
11/04/2014US8879298 E-fuse array circuit
10/2014
10/28/2014US8873313 Semiconductor apparatus
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