G11C - Static stores - Patents Sitemap

More topics under "G11C - Static stores" (278,845)
G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
G11C 14 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down (1,872)
G11C 15 - Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores (3,555)
G11C 16 - Erasable programmable read-only memories (44,373)
G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (10,133)
G11C 19 - Digital stores in which the information is moved stepwise, e.g. shift registers (6,160)
G11C 21 - Digital stores in which the information circulates (125)
G11C 23 - Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor (468)
G11C 25 - Digital stores characterised by the use of flowing media; Storage elements therefor (19)
G11C 27 - Electric analogue stores, e.g. for storing instantaneous values (3,965)
G11C 29 - Checking stores for correct operation; Testing stores during standby or offline operation (30,524)
G11C 5 - Details of stores covered by group (20,391)
G11C 7 - Arrangements for writing information into, or reading information out from, a digital store (53,197)
G11C 8 - Arrangements for selecting an address in a digital store (19,368)
G11C 99 - Subject matter not provided for in other groups of this subclass (24)

Patents for G11C - Static stores (462)
02/2008
02/20/2008	EP1614034A4 Initialization and update of software and/or firmware in electronic devices
02/06/2008	CN101120299A Asynchronous jitter reduction technique
01/2008
01/29/2008	US7324390 Low voltage operation dram control circuits
01/10/2008	US20080008018 Low voltage operation dram control circuits
12/2007
12/27/2007	WO2004097835A3 Nonvolatile memory structure with high speed high bandwidth and low voltage
12/27/2007	WO2004059651A3 Nonvolatile memory unit with specific cache
12/11/2007	US7307905 Low leakage asymmetric SRAM cell devices
11/2007
11/06/2007	US7291859 Organic electronic circuit and method for making the same
10/2007
10/24/2007	EP1550039A4 Dynamic memory supporting simultaneous refresh and data-access transactions
10/24/2007	CN101061550A Read method and sensing device
10/16/2007	US7282755 Stress assisted current driven switching for magnetic memory applications
10/11/2007	WO2004095460A3 Asynchronous jitter reduction technique
09/2007
09/04/2007	US7266008 Bimodal operation of ferroelectric and electret memory cells and devices
08/2007
08/22/2007	CN101023527A An organic ferroelectric or electret device with via connections and a method for its manufacture
08/22/2007	CN101023526A Electrical via connection and associated contact means as well as a method for their manufacture
08/22/2007	CN101023493A An organic ferroelectric or electret memory circuit and a method for making same
07/2007
07/12/2007	US20070159911 Semiconductor memory device and method of operating same
07/11/2007	CN1998084A Tunnel junction barrier layer comprising a diluted semiconductor with spin sensitivity
06/2007
06/20/2007	EP1797564A1 Read method and sensing device
06/14/2007	US20070133284 Flash EEprom System With Simultaneous Multiple Data Sector Programming and Storage of Physical Block Characteristics in Other Designated Blocks
06/05/2007	US7227221 Multiple bit chalcogenide storage device
06/05/2007	US7227170 Multiple bit chalcogenide storage device
05/2007
05/30/2007	EP1661137A4 Low voltage operation dram control circuits
05/30/2007	CN1973332A Organic electronic circuit with functional interlayer, and method for making the same
05/23/2007	CN1969339A Bimodal operation of ferrroelectric and electret memory cells and devices
05/22/2007	US7221596 pFET nonvolatile memory
05/10/2007	WO2007001713A3 Ultra dense non-volatile memory array
05/10/2007	US20070103960 Method for operating a data storage apparatus employing passive matrix addressing
05/09/2007	EP1782469A1 Electrical via connection and associated contact means as well as a method for their manufacture
05/09/2007	EP1782428A1 An organic ferroelectric or electret memory circuit and a method for making same
04/2007
04/18/2007	EP1774591A1 An organic ferroelectric or electret device with via connections and a method for its manufacture
04/04/2007	EP1683161A4 Stress assisted current driven switching for magnetic memory applications
04/03/2007	US7199424 Scalable flash EEPROM memory cell with notched floating gate and graded source region
04/03/2007	US7199055 Magnetic memory cell junction and method for forming a magnetic memory cell junction
03/2007
03/14/2007	EP1642299A4 Sram cell structure and circuits
03/07/2007	EP1647030A4 Asynchronous static random access memory
03/06/2007	US7187581 Semiconductor memory device and method of operating same
03/06/2007	US7187079 Stacked memory cell having diffusion barriers
02/2007
02/28/2007	EP1756868A1 Tunnel junction barrier layer comprising a diluted semiconductor with spin sensitivity
02/27/2007	US7184306 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
02/21/2007	EP1623430A4 Semiconductor memory device and method of operating same
01/2007
01/31/2007	CN1906701A Stress assisted current driven switching for magnetic memory applications
01/31/2007	CN1906697A Method for operating a data storage apparatus employing passive matrix addressing
01/17/2007	EP1743342A1 An organic electronic circuit with functional interlayer and method for making the same
01/17/2007	EP1743341A1 Bimodal operation of ferrroelectric and electret memory cells and devices
01/17/2007	CN1898744A Low voltage operation dram control circuits
01/09/2007	US7161828 Asynchronous static random access memory
01/04/2007	WO2007001713A2 Ultra dense non-volatile memory array
01/03/2007	EP1625589A4 Magnetoelectronics information device having a compound magnetic free layer
12/2006
12/21/2006	WO2006135246A1 A method in the fabrication of a ferroelectric memory device
12/13/2006	CN1879234A Multiple bit chalcogenide storage device
11/2006
11/28/2006	US7143125 Method and apparatus for noise shaping in direct digital synthesis circuits
11/21/2006	US7137893 Method and apparatus for write protecting a gaming storage medium
11/15/2006	CN1864271A Fowler-nordheim block alterable EEPROM memory cell
11/14/2006	CA2340633C Memory supervision
11/09/2006	WO2006118466A1 A non-volatile memory device
11/02/2006	US20060248172 Method for updating software of an electronic control device by flash programming via a serial interface and corresponding automatic state machine
10/2006
10/19/2006	WO2004114312A3 Magnetic memory device on low-temperature substrate
10/19/2006	US20060233016 SRAM cell structure and circuits
10/12/2006	US20060227593 Low voltage operation dram control circuits
10/04/2006	EP1661143A4 Method and system for providing a programmable current source for a magnetic memory
09/2006
09/26/2006	US7113437 Sense amplifier systems and a matrix-addressable memory device provided therewith
09/20/2006	CN1836336A Mirror image non-volatile memory cell transistor pairs with single poly layer
09/05/2006	US7102915 SRAM cell structure and circuits
08/2006
08/24/2006	US20060190638 Asynchronous jitter reduction technique
08/24/2006	US20060189077 Method for making high-density nonvolatile memory
08/16/2006	EP1690260A1 Method for operating a data storage apparatus employing passive matrix addressing
08/16/2006	EP1623463A4 Mram architecture with a bit line located underneath the magnetic tunneling junction device
08/09/2006	CN1816883A Nonvolatile memory and method of making same
08/09/2006	CN1816882A Sram cell structure and circuits
08/02/2006	CN1813311A Variable gate bias for a reference transistor in a non-volatile memory
08/01/2006	US7085156 Semiconductor memory device and method of operating same
07/2006
07/26/2006	EP1683161A2 Stress assisted current driven switching for magnetic memory applications
07/25/2006	US7082048 Low voltage operation DRAM control circuits
07/19/2006	EP1435099A4 Flash management system using only sequential write
06/2006
06/28/2006	CN1795509A Sense amplifier systems and a matrix-addressable memory device provided therewith
06/27/2006	US7067866 MRAM architecture and a method and system for fabricating MRAM memories utilizing the architecture
06/22/2006	WO2006033581A9 Read method and sensing device
06/22/2006	WO2005043542A3 Signal processing system control method and apparatus
06/22/2006	US20060131639 Scalable flash EEPROM memory cell with notched floating gate and graded source region
06/08/2006	US20060121674 Method of making a scalable flash EEPROM memory cell with notched floating gate and graded source region
06/08/2006	US20060118774 Multiple bit chalcogenide storage device
06/07/2006	EP1665404A2 Multiple bit chalcogenide storage device
06/07/2006	EP1665274A2 Fowler-nordheim block alterable eeprom memory cell
06/07/2006	EP1665272A2 Signal processing system control method and apparatus
05/2006
05/31/2006	EP1661143A2 Method and system for providing a programmable current source for a magnetic memory
05/31/2006	EP1661137A2 Low voltage operation dram control circuits
05/26/2006	WO2005020241A3 Fowler-nordheim block alterable eeprom memory cell
05/25/2006	US20060109712 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
05/24/2006	DE112004000703T5 Verfahren zum Betrieb einer Doppelzellenspeichereinrichtung mit einer verbesserten Lesebereichsspanne über die Lebensdauer hinweg Method for operating a dual cell memory device having an improved reading area over the life span of time
05/24/2006	CN1777959A Method of dual cell memory device operation for improved end-of-life read margin
05/24/2006	CN1777957A Magnetoelectronics information device having a compound magnetic free layer
05/23/2006	US7050324 Asynchronous static random access memory
05/18/2006	WO2004095458A3 Method and apparatus for noise shaping in direct digital synthesis circuits
05/17/2006	CN1774816A Magnetoresistive random acess memory device structures and methods for fabricating the same
05/04/2006	US20060091435 Organic electronic circuit and method for making the same
04/2006
04/27/2006	WO2005109437A3 Pfet nonvolatile memory
04/20/2006	WO2006009463A8 Electrical via connection and associated contact means as well as a method for their manufacture
04/20/2006	WO2006009461A8 An organic ferroelectric or electret memory circuit and a method for making same
04/20/2006	WO2004086406A8 Sense amplifier systems and a matrix-addressable memory device provided therewith

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