Patents
Sitemap › G11 - Information storage › G11C - Static stores
More topics under "G11C - Static stores" (278,845)
G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
G11C 14 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down (1,872)
G11C 15 - Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores (3,555)
G11C 16 - Erasable programmable read-only memories (44,373)
G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (10,133)
G11C 19 - Digital stores in which the information is moved stepwise, e.g. shift registers (6,160)
G11C 21 - Digital stores in which the information circulates (125)
G11C 23 - Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor (468)
G11C 25 - Digital stores characterised by the use of flowing media; Storage elements therefor (19)
G11C 27 - Electric analogue stores, e.g. for storing instantaneous values (3,965)
G11C 29 - Checking stores for correct operation; Testing stores during standby or offline operation (30,524)
G11C 5 - Details of stores covered by group (20,391)
G11C 7 - Arrangements for writing information into, or reading information out from, a digital store (53,197)
G11C 8 - Arrangements for selecting an address in a digital store (19,368)
G11C 99 - Subject matter not provided for in other groups of this subclass (24)
Patents for G11C - Static stores (462)
04/2006
04/19/2006EP1647030A2 Asynchronous static random access memory
04/19/2006EP1647026A2 A scalable flash eeprom memory cell with notched floating gate and graded source region, and method of manufacturing the same
04/11/2006US7026212 Method for making high density nonvolatile memory
04/05/2006EP1642299A2 Sram cell structure and circuits
03/2006
03/30/2006WO2006033581A1 Read method and sensing device
03/29/2006EP1639603A2 Method for updating software of an electronic control device by flash programming via a serial interface and corresponding automatic state machine
03/29/2006EP1639601A2 Asynchronous jitter reduction technique
03/23/2006US20060062042 Read method and sensing device
03/22/2006EP1636849A2 Mirror image non-volatile memory cell transistor pairs with single poly layer
03/16/2006WO2005004160A3 Method for updating software of an electronic control device by flash programming via a serial interface and corresponding automatic state machine
03/08/2006EP1631966A2 Transplanted magnetic random access memory (mram) devices on thermally-sensitive substrates using laser transfer and method for making the same
03/07/2006US7009275 Method for making high density nonvolatile memory
03/07/2006US7009244 Scalable flash EEPROM memory cell with notched floating gate and graded source region
03/02/2006WO2006021960A1 Slim data storing device and process for producing the same
03/02/2006US20060046344 Organic electronic circuit and method for making the same
02/2006
02/15/2006EP1625589A2 Magnetoelectronics information device having a compound magnetic free layer
02/08/2006EP1623463A2 Mram architecture with a bit line located underneath the magnetic tunneling junction device
02/08/2006EP1623430A2 Semiconductor memory device and method of operating same
02/07/2006US6996008 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
02/07/2006US6995422 High-density three-dimensional memory
01/2006
01/26/2006WO2006009463A1 Electrical via connection and associated contact means as well as a method for their manufacture
01/26/2006WO2006009462A1 An organic ferroelectric or electret device with via connections and a method for its manufacture
01/26/2006WO2006009461A1 An organic ferroelectric or electret memory circuit and a method for making same
01/26/2006US20060018175 Electrical via connection and associated contact means as well as a method for their manufacture
01/19/2006WO2005106890A8 An organic electronic circuit with functional interlayer and method for making the same
01/19/2006US20060013041 Nonvolatile memory structure with high speed high bandwidth and low voltage
01/11/2006EP1614034A2 Initialization and update of software and/or firmware in electronic devices
01/10/2006US6984561 Method for making high density nonvolatile memory
01/05/2006US20060002171 Bimodal operation of ferroelectric and electret memory cells and devices
01/03/2006US6982445 MRAM architecture with a bit line located underneath the magnetic tunneling junction device
12/2005
12/28/2005EP1609187A2 Mram architecture and a method and system for fabricating mram memories utilizing the architecture
12/21/2005EP1606820A1 Sense amplifier systems and a matrix-addressable memory device provided therewith
12/20/2005US6977838 Method and system for providing a programmable current source for a magnetic memory
12/15/2005WO2005024834A3 Low voltage operation dram control circuits
12/15/2005US20050276095 Asynchronous static random access memory
12/14/2005EP1604398A2 Magnetic memory cell junction and method for forming a magnetic memory cell junction
12/08/2005WO2005117128A1 Tunnel junction barrier layer comprising a diluted semiconductor with spin sensitivity
12/01/2005WO2004100169A3 Mram architecture with a bit line located underneath the magnetic tunneling junction device
11/2005
11/24/2005WO2005001840A3 Mirror image non-volatile memory cell transistor pairs with single poly layer
11/17/2005WO2005109437A2 Pfet nonvolatile memory
11/10/2005WO2005106890A1 An organic electronic circuit with functional interlayer and method for making the same
11/10/2005CA2563551A1 An organic electronic circuit with functional interlayer and method for making the same
11/03/2005US20050242343 Organic electronic circuit with functional interlayer, and method for making the same
11/02/2005EP1590837A2 High density and high programming efficiency mram design
11/01/2005US6960495 Method for making contacts in a high-density memory
10/2005
10/27/2005WO2005101419A1 Bimodal operation of ferrroelectric and electret memory cells and devices
10/27/2005WO2005050653A3 Stress assisted current driven switching for magnetic memory applications
10/27/2005US20050239250 Ultra dense non-volatile memory array
10/27/2005US20050237821 Method and system of external data storage
10/27/2005CA2562350A1 Bimodal operation of ferroelectric and electret memory cells and devices
10/18/2005US6957313 Memory matrix and method of operating the same
10/13/2005US20050226031 Low leakage asymmetric sram cell devices
10/05/2005CN1679110A Differential floating gate nonvolatile memories
10/04/2005US6952030 High-density three-dimensional memory cell
09/2005
09/29/2005US20050213391 Fowler-Nordheim block alterable EEPROM memory cell
09/27/2005US6950342 Differential floating gate nonvolatile memories
09/21/2005EP1577782A1 Method and system of external data storage
09/09/2005WO2005006338A3 Magnetoelectronics information device having a compound magnetic free layer
08/2005
08/25/2005WO2005043541A3 Method and system for providing a programmable current source for a magnetic memory
08/23/2005US6933557 Fowler-Nordheim block alterable EEPROM memory cell
08/18/2005WO2005008672B1 Asynchronous static random access memory
08/17/2005CN1655133A Method and system of external data storage
08/12/2005CA2495759A1 Method and system of external data storage
08/11/2005US20050174873 Semiconductor memory device and method of operating same
08/04/2005WO2005048262A3 Mram architecture with a flux closed data storage layer
08/03/2005EP1560225A2 Method and apparatus for reducing soft errors
07/2005
07/28/2005US20050164452 Mirror image non-volatile memory cell transistor pairs with single poly layer
07/21/2005US20050157580 Semiconductor memory device and method of operating same
07/14/2005WO2005008672A3 Asynchronous static random access memory
07/06/2005EP1550039A2 Dynamic memory supporting simultaneous refresh and data-access transactions
06/2005
06/30/2005WO2005006340A3 Sram cell structure and circuits
06/23/2005WO2004061851A3 An improved method for making high-density nonvolatile memory
06/23/2005US20050138482 Method and apparatus for reducing soft errors
06/21/2005US6909633 MRAM architecture with a flux closed data storage layer
06/09/2005WO2005027134A3 Multiple bit chalcogenide storage device
06/02/2005WO2005050657A1 Method for operating a data storage apparatus employing passive matrix addressing
06/02/2005WO2005050653A2 Stress assisted current driven switching for magnetic memory applications
06/02/2005US20050117429 Nonvolatile memory structure with high speed high bandwidth and low voltage
06/02/2005CA2546263A1 Method for operating a data storage apparatus employing passive matrix addressing
05/2005
05/26/2005WO2005048262A2 Mram architecture with a flux closed data storage layer
05/19/2005WO2005013281A3 Nonvolatile memory and method of making same
05/19/2005WO2004093084A3 Mram architecture and a method and system for fabricating mram memories utilizing the architecture
05/19/2005US20050106810 Stress assisted current driven switching for magnetic memory applications
05/19/2005US20050105358 Sense amplifier systems and a matrix-addressable memory device provided therewith
05/12/2005WO2005043542A2 Signal processing system control method and apparatus
05/12/2005WO2005043541A2 Method and system for providing a programmable current source for a magnetic memory
05/10/2005US6890770 Magnetoresistive random access memory device structures and methods for fabricating the same
05/06/2005WO2005006337A3 Variable gate bias for a reference transistor in a non-volatile memory
05/03/2005US6888192 Mirror image non-volatile memory cell transistor pairs with single poly layer
04/2005
04/27/2005CN1199193C A read-only memory and read-only memory device
04/27/2005CN1199192C A read-only memory and read-only memory devices
04/21/2005US20050083769 Low voltage operation DRAM control circuits
04/07/2005WO2004102576A3 Semiconductor memory device and method of operating same
03/2005
03/24/2005WO2005027134A2 Multiple bit chalcogenide storage device
03/24/2005WO2004095459A3 Magnetoresistive ram device and methods for fabricating
03/24/2005US20050063235 PFET nonvolatile memory
03/24/2005CA2538142A1 Multiple bit chalcogenide storage device
03/17/2005WO2005024834A2 Low voltage operation dram control circuits
03/17/2005WO2004079742A3 Method of forming a flux concentrating layer of a magnetic device
03/17/2005US20050060512 Signal processing system control method and apparatus
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