Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
08/2011
08/04/2011US20110188319 Nonvolatile semiconductor memory device and nonvolatile semiconductor memory system
08/04/2011US20110188318 Flash Memory Device and a Method of Verifying the Same
08/04/2011US20110188317 Non-volatile memory with fast binary programming and reduced power consumption
08/04/2011US20110188316 Semiconductor memory device
08/04/2011US20110188315 Non-volatile semiconductor memory device having non-selected word lines adjacent to selected word lines being charged at different timing for program disturb control
08/04/2011US20110188314 Bit line stability detection
08/04/2011US20110188313 Data retention of last word line of non-volatile memory arrays
08/04/2011US20110188312 Method for memory cell erasure with a programming monitor of reference cells
08/04/2011US20110188311 Efficient Memory Sense Architecture
08/04/2011US20110188310 Nonvolatile memory devices with common source line voltage compensation and methods of operating the same
08/04/2011US20110188308 Over erase correction method of flash memory apparatus
08/04/2011US20110188307 Nonvolatile semiconductor memory device and method for driving same
08/03/2011EP2351075A1 Non-volatile semiconductor storage device
08/03/2011EP2351044A1 Data transfer and programming in a memory device
08/03/2011EP2351043A1 Pair bit line programming to improve boost voltage clamping
08/03/2011EP2351042A1 Preventing unintended permanent write-protection in nonvolatile memory
08/03/2011EP2351041A1 Programming non-volatile memory with high resolution variable initial programming pulse
08/03/2011EP2351040A1 Page buffer program command and methods to reprogram pages without re-inputting data to a memory device
08/03/2011CN102142516A Resistance random access memory with self-selection crosstalk-resistant function and cross array memory circuit
08/03/2011CN102142280A Storage programmed discharge circuit
08/03/2011CN102142279A Semiconductor storage device
08/03/2011CN102141943A Flash memory device and data protection method thereof
08/03/2011CN101364434B Phase change memory device with reference cell array
08/02/2011US7992061 Method for testing reliability of solid-state storage medium
08/02/2011US7990775 Methods of operating memory devices including different sets of logical erase blocks
08/02/2011US7990774 Communication device and method for erasing data from a communication device
08/02/2011US7990771 Program method of flash memory device
08/02/2011US7990770 Method of programming nonvolatile memory device
08/02/2011US7990769 Method of programming and sensing memory cells using transverse channels and devices employing same
08/02/2011US7990768 Setting memory controller driver to memory device termination value in a communication bus
08/02/2011US7990767 Flash memory system having cross-coupling compensation during read operation
08/02/2011US7990766 Multi-bit-per-cell flash memory device with non-bijective mapping
08/02/2011US7990765 Least significant bit page recovery method used in multi-level cell flash memory device
08/02/2011US7990764 Post-facto correction for cross coupling in a flash memory
08/02/2011US7990763 Memory with weighted multi-page read
08/02/2011US7989789 Phase-change memory device that stores information in a non-volatile manner by changing states of a memory material
07/2011
07/28/2011WO2011088938A1 Paired programmable fuses
07/28/2011WO2011031302A3 Memory kink checking
07/28/2011US20110182126 Flash memory array of floating gate-based non-volatile memory cells
07/28/2011US20110182125 Semiconductor memory device, semiconductor device, and method of data erase in the semiconductor memory device
07/28/2011US20110182124 Non-volatile memory low voltage and high speed erasure method
07/28/2011US20110182123 Flash memory and manufacturing method and operating method thereof
07/28/2011US20110182122 Dynamic soft program trims
07/28/2011US20110182121 Data recovery for non-volatile memory based on count of data state-specific fails
07/28/2011US20110182120 Non-volatile memory devices and systems including multi-level cells using modified read voltages and methods of operating the same
07/28/2011US20110182119 Apparatus, system, and method for determining a read voltage threshold for solid-state storage media
07/28/2011US20110182118 Adaptive dynamic reading of flash memories
07/28/2011US20110182117 Method of programming nonvolatile semiconductor memory device
07/28/2011US20110182116 Semiconductor device and control method of the same
07/28/2011DE112009002214T5 Wiederherstellungsverfahren für eine LSB-Speicherseite zur Verwendung in einer Multi-Level-Cell-Flashspeichervorrichtung Recovery method for an LSB memory page for use in a multi-level cell flash memory device
07/27/2011EP2348511A1 Variable program for non-volatile storage
07/27/2011EP2348510A1 A daisy chain arrangement of non-volatile memories
07/27/2011EP2347442A1 Solid state drive or other storage apparatus that includes a plurality of encapsulated semiconductor chips
07/27/2011EP2347417A1 Progamming data into a multi-plane flash memory
07/27/2011EP1590810B1 Improved method for reading a non-volatile memory cell adjacent to an inactive region of a non-volatile memory cell array
07/27/2011CN1971762B Nonvolatile semiconductor memory and method of programming the same
07/27/2011CN1953230B Nonvolatile memory device comprising nanodot and manufacturing method for the same
07/27/2011CN1692450B Non-volatile memory and write method of the same
07/27/2011CN102138183A Selective erase operation for non-volatile storage
07/27/2011CN102138182A Programming and selectively erasing non-volatile storage
07/27/2011CN102138181A Improved programming algorithm to reduce disturb with minimal extra time penalty
07/27/2011CN102136296A Method for identifying metadata format of NANDFlash memory chip
07/27/2011CN102136295A Data wiping method for NOR flash memory
07/27/2011CN102136294A Semiconductor integrated circuit
07/27/2011CN102136293A Method of programming non-volatile semiconductor memory device
07/27/2011CN102136274A Mobile hard disk with two storage media
07/27/2011CN101609710B Sense amplifier circuit and data sensing method thereof
07/27/2011CN101281791B Method for programming flash device
07/26/2011US7986567 Read buffering systems for accessing multiple layers of memory in integrated circuits
07/26/2011US7986565 Method of erasing data in flash memory device
07/26/2011US7986564 High second bit operation window method for virtual ground array with two-bit memory cells
07/26/2011US7986563 NAND flash memory programming
07/26/2011US7986562 Controlling AC disturbance while programming
07/26/2011US7986561 Semiconductor memory device
07/26/2011US7986559 Method of operating nonvolatile memory device
07/26/2011US7986557 Nonvolatile semiconductor memory device and nonvolatile semiconductor memory system
07/26/2011US7986555 Method for programming and erasing an NROM cell
07/26/2011US7986552 Nonvolatile memory device and method of operation to program/read data by encoding/decoding using actual data and random data for program/read operation
07/21/2011WO2011087429A1 Method and system for updating of software
07/21/2011US20110179322 Nonvolatile memory device and related program verification circuit
07/21/2011US20110176370 Nonvolatile semiconductor memory
07/21/2011US20110176369 Erase verification method of flash memory apparatus
07/21/2011US20110176368 Multiple time programmable (mtp) pmos floating gate-based non-volatile memory device for a general purpose cmos technology with thick gate oxide
07/21/2011US20110176367 Nonvolatile semiconductor memory device and operation method thereof
07/21/2011US20110176366 Semiconductor storage device and reading method thereof
07/21/2011US20110176365 Two terminal programmable hot channel electron non-volatile memory
07/21/2011US20110176364 Semiconductor memory device
07/21/2011US20110176363 Junction leakage suppression in memory devices
07/21/2011US20110176362 Semiconductor storage device capable of reducing erasure time
07/21/2011US20110176361 Method and apparatus for increasing memory programming efficiency through dynamic switching of bit lines
07/21/2011DE112004002927B4 Halbleiterbauelement und Verfahren zum Beschreiben desselben Of the same semiconductor device and method for describing
07/21/2011DE10225900B4 Kleinspeichervorrichtung mit Treibern in der Vorrichtung Small storage device with drivers in the device
07/21/2011DE102005029875B4 Flash-Speichervorrichtung mit verbesserter Vorprogammierfunktion und Verfahren zum Steuern eines Vorprogrammierbetriebs darin A flash memory device having improved Vorprogammierfunktion and method for controlling a Vorprogrammierbetriebs therein
07/21/2011DE102005026900B4 Blockgrößenänderungsfähige NAND-Flash-Speichervorrichtung Block resizing capability NAND flash memory device
07/20/2011EP2345038A1 Multi-pass programming for memory using word line coupling
07/20/2011EP2345037A2 Translation layer in a solid state storage device
07/20/2011EP2345035A1 A composite memory having a bridging device for connecting discrete memory devices to a system
07/20/2011EP1540657B1 Software refreshed memory device and method
07/20/2011CN102132355A Correcting for over programming non-volatile storage
07/20/2011CN102132354A Fast, low-power reading of data in flash memory
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