G11C 16 - Erasable programmable read-only memories

Patents for G11C 16 - Erasable programmable read-only memories (44,373)
06/2011
06/02/2011	US20110128789 Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell
06/02/2011	US20110128788 Nand flash memory
06/02/2011	US20110128787 Ripple programming of memory cells in a nonvolatile memory
06/02/2011	US20110128786 Memory device
06/02/2011	US20110128785 Apparatus and method for protecting data in flash memory
06/02/2011	US20110128784 Non-volatile memory device
06/02/2011	US20110128783 Method of reading nonvolatile memory device and method of operating nonvolatile memory device
06/02/2011	US20110128782 Reducing effects of erase disturb in a memory device
06/01/2011	EP2062265B1 Non-volatile memory and method for reduced erase/write cycling during trimming of initial programming voltage
06/01/2011	DE112004002973B4 Halbleiterbauelement und Verfahren zum Schreiben von Daten A semiconductor device and method for writing data
06/01/2011	DE112004002930B4 Halbleiterbauelement und Verfahren zum Erzeugen eines Fühlersignals A semiconductor device and method for generating a sensor signal
06/01/2011	DE102010060804A1 Gespeicherte Multi-Bit-Daten gekennzeichnet durch mehrdimensionale Speicherzustände Saved multi-bit data characterized by multidimensional memory states
06/01/2011	DE10061769B4 Halbleiterspeicherbaustein A semiconductor memory device
06/01/2011	CN201853706U Radioresistance EEPROM (electrically erasable programmable read-only memory) storage array structure
06/01/2011	CN1976039B Non-volatile memory device and method of operating the same
06/01/2011	CN102081968A Electrically erasable and programmable memory device with two cells per bit
06/01/2011	CN102081967A Power source circuit and semiconductor memory circuit using the same
06/01/2011	CN101494029B Digital-to-analog converter
06/01/2011	CN101350360B Three-dimensional stacking non-phase-change caused resistance conversion storage apparatus and manufacturing method thereof
06/01/2011	CN101315811B Dynamic phase-change memory
06/01/2011	CN101252170B Full epitaxial electric resistance changing multi-layer films based on silicon substrate, method and application thereof
06/01/2011	CN101213611B Low power multiple bit reading amplifier and reading method
06/01/2011	CN101034732B Resistance random memory device
05/2011
05/31/2011	US7954039 Memory card and memory controller
05/31/2011	US7954019 Flash storage device and method and system for testing the same
05/31/2011	US7952938 Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memory
05/31/2011	US7952937 Wordline driver for a non-volatile memory device, a non-volatile memory device and method
05/31/2011	US7952936 Program-verify method
05/31/2011	US7952935 Nonvolatile memory device and program or verification method using the same
05/31/2011	US7952933 Semiconductor memory device
05/31/2011	US7952932 Sonos-based non-volatile memory AND-array
05/31/2011	US7952930 NAND flash memory
05/31/2011	US7952927 Adjusting program and erase voltages in a memory device
05/31/2011	US7952925 Nonvolatile semiconductor memory device having protection function for each memory block
05/31/2011	US7952923 Multiple bit per cell non volatile memory apparatus and system having polarity control and method of programming same
05/31/2011	US7952922 Method for programming a non-volatile memory device to reduce floating-gate-to-floating-gate coupling effect
05/31/2011	US7952135 Semiconductor integrated circuit device and a method of manufacturing the same
05/26/2011	WO2011062067A1 Semiconductor device
05/26/2011	WO2011062058A1 Semiconductor device
05/26/2011	WO2011062029A1 Memory device
05/26/2011	WO2011060703A1 Method and device for implementing electrically-erasable programmable read-only memory
05/26/2011	US20110122708 Method and apparatus for performing semiconductor memory operations
05/26/2011	US20110122707 Page buffer circuit, nonvolatile memory device including the page buffer circuit, and method of operating the nonvolatile memory device
05/26/2011	US20110122706 Operating method in a non-volatile memory device
05/26/2011	US20110122705 Method of programming nonvolatile memory device
05/26/2011	US20110122704 Method of programming nonvolatile memory device
05/26/2011	US20110122703 Programming memory with direct bit line driving to reduce channel-to-floating gate coupling
05/26/2011	US20110122702 Programming memory with sensing-based bit line compensation to reduce channel-to-floating gate coupling
05/26/2011	US20110122701 Semiconductor memory having electrically erasable and programmable semiconductor memory cells
05/26/2011	US20110122700 Relaxed metal pitch memory architectures
05/26/2011	US20110122699 Controlling a memory device responsive to degradation
05/26/2011	US20110122698 Semiconductor memory device
05/26/2011	US20110122697 Method of programming a nonvolatile memory device
05/26/2011	US20110122696 Non-volatile semiconductor memory device
05/26/2011	US20110122695 Programming memory with bit line floating to reduce channel-to-floating gate coupling
05/26/2011	US20110122694 Limitation of the access to a resource of an electronic circuit
05/26/2011	US20110122693 Flash memory array system including a top gate memory cell
05/26/2011	US20110122692 Programming non-volatile memory with a reduced number of verify operations
05/26/2011	US20110122691 Power management of memory systems
05/26/2011	US20110122690 Method for programming multi-level cell and memory apparatus
05/26/2011	US20110122689 Reducing effects of program disturb in a memory device
05/26/2011	US20110122688 Reading array cell with matched reference cell
05/26/2011	US20110122687 Techniques for reducing disturbance in a semiconductor device
05/26/2011	DE112009001620T5 Nichtflüchtige Speichervorrichtung mit mehreren Bits Pro Zelle (MBC) und System mit Polaritätssteuerung sowie Verfahren zum Programmieren derselbigen A non-volatile memory device with multiple bits per cell (MBC) and polarity control system and method for programming derselbigen
05/25/2011	EP2324428A1 Memory system and method of controlling memory system
05/25/2011	EP1751770B1 Boosting to control programming of non-volatile memory
05/25/2011	CN1975933B Non-volatile memory device and its read-out method
05/25/2011	CN1971754B Read-amplifier circuit of memorizer
05/25/2011	CN102077298A Read disturb mitigation in non-volatile memory
05/25/2011	CN102074269A Programmable information storage circuit
05/25/2011	CN101425336B Recording and comparing method
05/24/2011	USRE42398 Memory system
05/24/2011	US7949823 Multilevel storage nonvolatile semiconductor memory device enabling high-speed data reading and high-speed data writing
05/24/2011	US7949821 Method of storing data on a flash memory device
05/24/2011	US7948805 Method of programming a multi level cell
05/24/2011	US7948804 Semiconductor memory device and data write method thereof
05/24/2011	US7948803 Non-volatile memory device and a programmable voltage reference for a non-volatile memory device
05/24/2011	US7948801 Nonvolatile memory device with expanded trimming operations
05/24/2011	US7948800 Semiconductor memory device and driving method for the same
05/24/2011	US7948799 Structure and method of sub-gate NAND memory with bandgap engineered SONOS devices
05/24/2011	US7948798 Mixed multi-level cell and single level cell storage device
05/24/2011	US7948797 Nonvolatile semiconductor memory device and method for operating the same
05/24/2011	US7946503 Semiconductor device
05/19/2011	WO2011060078A1 Data state-dependent channel boosting to reduce channel-to-floating gate coupling in memory
05/19/2011	WO2011058864A1 Device including nonvolatile memory element
05/19/2011	US20110119436 Flash memory system and data writing method thereof
05/19/2011	US20110116324 Memory array of floating gate-based non-volatile memory cells
05/19/2011	US20110116322 Charge recycling memory system and a charge recycling method thereof
05/19/2011	US20110116321 Semiconductor device for preventing erroneous write to memory cell in switching operational mode between normal mode and standby mode
05/19/2011	US20110116320 Voltage generator to compensate sense amplifier trip point over temperature in non-volatile memory
05/19/2011	US20110116319 Memory array of floating gate-based non-volatile memory cells
05/19/2011	US20110116318 Memory array of floating gate-based non-volatile memory cells
05/19/2011	US20110116317 Program and erase methods with substrate transient hot carrier injections in a non-volatile memory
05/19/2011	US20110116316 Nonvolatile random access memory
05/19/2011	US20110116315 Nonvolatile Semiconductor Memory Device
05/19/2011	US20110116314 Method of operating integrated circuit embedded with non-volatile programmable memory having variable coupling related application data
05/19/2011	US20110116313 Read method for mlc
05/19/2011	US20110116312 Non volatile cell and architecture with single bit random access read, program and erase
05/19/2011	US20110116311 Reduction of punch-through disturb during programming of a memory device
05/19/2011	DE102005016101B4 Elektroniksteuereinheit Electronic control unit

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