| Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
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| 06/15/2011 | CN102099864A Multiple-bit per cell (MBC) non-volatile memory apparatus and system having polarity control and method of programming same |
| 06/15/2011 | CN102097131A Voltage generation circuit |
| 06/15/2011 | CN102097130A EEPROM erasing and writing method and device |
| 06/15/2011 | CN102097129A Erasing voltage rise control circuit of flash memory |
| 06/15/2011 | CN102097128A Self-adaptive buffer area replacement method based on flash memory |
| 06/15/2011 | CN102097127A Operating method of nonvolatile memory with variable raceway channel region interface |
| 06/15/2011 | CN102097126A Programing of a non-volatile memory cell electrically programable and erasable and corresponding memory device |
| 06/15/2011 | CN102097125A PCM (pulse code modulation) write operation method |
| 06/15/2011 | CN102097124A Semiconductor devices having on-die termination structures and termination methods performed in the semiconductor devices |
| 06/15/2011 | CN102096647A Multi-chip memory system and related data transfer method |
| 06/15/2011 | CN101261880B Programmable conductor random access memory and method for sensing same |
| 06/15/2011 | CN101188251B Memory unit and its device and making method |
| 06/15/2011 | CN101051527B Electronic device with low-voltag transistor realizing |
| 06/15/2011 | CN101044577B Integrated circuit with phase-change memory cells and method for addressing phase-change memory cells |
| 06/14/2011 | US7961530 Semiconductor device including nonvolatile memory |
| 06/14/2011 | US7961525 Method for deleting data from NAND type nonvolatile memory |
| 06/14/2011 | US7961523 Nonvolatile memory device and programming method |
| 06/14/2011 | US7961521 Sensing circuit for flash memory device operating at low power supply voltage |
| 06/14/2011 | US7961520 Encoding and decoding to reduce switching of flash memory transistors |
| 06/14/2011 | US7961519 Memory employing independent dynamic reference areas |
| 06/14/2011 | US7961518 Programming rate identification and control in a solid state memory |
| 06/14/2011 | US7961515 Nonvolatile memory |
| 06/14/2011 | US7961514 Semiconductor device, a method of using a semiconductor device, a programmable memory device, and method of producing a semiconductor device |
| 06/14/2011 | US7961513 Method for programming a multilevel memory |
| 06/14/2011 | US7961511 Hybrid programming methods and systems for non-volatile memory storage elements |
| 06/09/2011 | WO2011067795A1 Refresh architecture and algorithm for non-volatile memories |
| 06/09/2011 | WO2011067031A1 Resistive memory devices having a not-and(nand) structure |
| 06/09/2011 | WO2011037703A3 Methods of reading and using memory cells |
| 06/09/2011 | WO2011031811A3 Data line management in a memory device |
| 06/09/2011 | US20110138111 Flash memory device and method of programming same |
| 06/09/2011 | US20110134704 Nonvolatile memory device and method of operating the same |
| 06/09/2011 | US20110134703 Nonvolatile Memory and Method With Reduced Program Verify by Ignoring Fastest And/Or Slowest Programming Bits |
| 06/09/2011 | US20110134702 Programming methods and memories |
| 06/09/2011 | US20110134701 Memory kink compensation |
| 06/09/2011 | US20110134700 Nonvolatile Semiconductor Memory |
| 06/09/2011 | US20110134699 Apparatus for reducing the impact of program disturb |
| 06/09/2011 | US20110134698 FLASH MEMORY CELL ON SeOI HAVING A SECOND CONTROL GATE BURIED UNDER THE INSULATING LAYER |
| 06/09/2011 | US20110134697 Dynamic pass voltage for sense operation in a memory device |
| 06/09/2011 | US20110134696 Flash EEprom System With Simultaneous Multiple Data Sector Programming and Storage of Physical Block Characteristics in Other Designated Blocks |
| 06/09/2011 | US20110134695 Semiconductor memory device |
| 06/09/2011 | US20110134694 High Voltage Generation And Control In Source-Side Injection Programming Of Non-Volatile Memory |
| 06/09/2011 | US20110134693 Apparatus for reducing the impact of program disturb |
| 06/09/2011 | US20110134692 Adaptive dynamic reading of flash memories |
| 06/08/2011 | EP2330597A1 Supply of a memory device with regulated voltages for logic and programming voltage |
| 06/08/2011 | EP2330596A1 Command queue for peripheral component |
| 06/08/2011 | EP2330592A1 8-bit or more A/D conversion for the determination of a NAND memory cell value |
| 06/08/2011 | EP2330575A2 Method of using flash memory for storing metering data |
| 06/08/2011 | EP2329496A1 Serial-connected memory system with output delay adjustment |
| 06/08/2011 | CN201858967U Storage system for industrial laser triangulation measurement and high-speed images |
| 06/08/2011 | CN1933028B Nand flash memory device with burst read latency function |
| 06/08/2011 | CN1739163B 浮动栅电路 Floating gate circuit |
| 06/08/2011 | CN1637949B Nand flash memory with enhanced program and erase performance, and fabrication process |
| 06/08/2011 | CN102089828A Data collection and compression in a solid state storage device |
| 06/08/2011 | CN102089827A Nonvolatile memory and method for correlated multiple pass programming |
| 06/08/2011 | CN102088028A Flash memory cell on SeOI having second control gate buried under insulating layer |
| 06/08/2011 | CN102087880A Initialization method of memory element |
| 06/08/2011 | CN102087879A 存储卡和电子装置 Memory cards and electronic devices |
| 06/08/2011 | CN102087878A Flash memory device and method of programming same |
| 06/08/2011 | CN102087877A Unit construction of MTP device and operation method thereof |
| 06/08/2011 | CN101369597B Multi-level memory cell having phase change element and asymmetrical thermal boundary |
| 06/08/2011 | CN101140799B Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
| 06/08/2011 | CN101091223B Bias application method of storage and storage device |
| 06/08/2011 | CN101031978B Non-volatile memory system with program time control |
| 06/08/2011 | CN101009138B Programing method of flash memory |
| 06/07/2011 | US7958439 Defective memory block remapping method and system, and memory device and processor-based system using same |
| 06/07/2011 | US7958288 Semiconductor storage device and method of controlling the same |
| 06/07/2011 | US7958287 Semiconductor storage device and method of controlling the same |
| 06/07/2011 | US7957205 Semiconductor device and control method of the same |
| 06/07/2011 | US7957204 Flash memory programming power reduction |
| 06/07/2011 | US7957201 Flash memory device operating at multiple speeds |
| 06/07/2011 | US7957200 Semiconductor memory device and read access method thereof |
| 06/07/2011 | US7957199 Method of erasing in non-volatile memory device |
| 06/07/2011 | US7957198 Verifying an erase threshold in a memory device |
| 06/07/2011 | US7957197 Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node |
| 06/07/2011 | US7957196 Method of programming memory cells of series strings of memory cells |
| 06/07/2011 | US7957195 Semiconductor device |
| 06/07/2011 | US7957193 Semiconductor memory device including two different nonvolatile memories |
| 06/07/2011 | US7957191 Method of programming non-volatile memory device |
| 06/07/2011 | US7957190 Memory having P-type split gate memory cells and method of operation |
| 06/07/2011 | US7957189 Drift compensation in a flash memory |
| 06/07/2011 | US7957188 Structures and methods of trimming threshold voltage of a flash EEPROM memory |
| 06/07/2011 | US7957187 Dynamic and adaptive optimization of read compare levels based on memory cell threshold voltage distribution |
| 06/07/2011 | US7957009 Image sensing and printing device |
| 06/03/2011 | WO2011066234A1 Programming non-volatile memory with reduced number of verify operations |
| 06/03/2011 | WO2011066228A1 Programming memory with sensing-based bit line compensation to reduce channel -to-floating gate coupling |
| 06/03/2011 | WO2011066225A1 Programming memory with bit line floating to reduce channel-to-floating gate coupling |
| 06/03/2011 | WO2011066034A2 Resetting phase change memory bits |
| 06/03/2011 | WO2011065258A1 Semiconductor device |
| 06/03/2011 | WO2011065183A1 Semiconductor device including memory cell |
| 06/03/2011 | WO2011064866A1 Nonvolatile semiconductor memory device and erasure method therefor |
| 06/03/2011 | WO2011064801A1 Memory including a low thermal budget selector switch on a variable resistance memory cell |
| 06/03/2011 | WO2011064057A1 Phase change memory element |
| 06/03/2011 | WO2011044385A3 Vertically stackable dies having chip identifier structures |
| 06/02/2011 | US20110131444 Systems and methods for low wear operation of solid state memory |
| 06/02/2011 | US20110131368 Method and apparatus for managing erase count of memory device |
| 06/02/2011 | US20110131367 Nonvolatile memory device, memory system comprising nonvolatile memory device, and wear leveling method for nonvolatile memory device |
| 06/02/2011 | US20110131364 Reprogramming a non-volatile solid state memory system |
| 06/02/2011 | US20110128792 Semiconductor storage device and boosting circuit |
| 06/02/2011 | US20110128791 Method and Apparatus of Performing an Erase Operation on a Memory Integrated Circuit |
| 06/02/2011 | US20110128790 Analog sensing of memory cells in a solid-state memory device |