Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
02/2014
02/12/2014CN103578548A Flash memory and method for determining reference units thereof
02/12/2014CN103578547A Burning method for invisible region in sequencable integrated circuit chip
02/12/2014CN103578546A Data burning method and system for storage chip of air conditioner
02/12/2014CN103578545A Non-volatile memory device with clustered memory cells
02/12/2014CN103578544A Methods and systems for adjusting nvm cell bias conditions for program/erase operations to reduce performance degradation
02/12/2014CN103578543A Methods and systems for adjusting nvm cell bias conditions based upon operating temperature to reduce performance degradation
02/12/2014CN103578542A Electric charge flow elemen
02/12/2014CN103578541A Non-volatile semiconductor memory device and reading-out method therefore
02/12/2014CN103578540A Semiconductor memory device and method of operating same
02/12/2014CN103578539A 半导体存储器件 The semiconductor memory device
02/12/2014CN103578538A Semiconductor memory device and methods of operating the same
02/12/2014CN103578537A Method of accessing a non-volatile memory
02/12/2014CN103578536A Flash memory and method for determining reference units thereof
02/12/2014CN103578535A Method and apparatus for reading NAND quick-flash memory
02/12/2014CN103578534A Ferroelectric random access memory with a non-destructive read
02/12/2014CN103578523A Memory device, memory system, and method of controlling read voltage of the memory device
02/12/2014CN102110471B Nonvolatile semiconductor memory device
02/12/2014CN102057439B Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise
02/12/2014CN102024495B Nonvolatile semiconductor memory device and method of data read therein
02/12/2014CN101989460B Improved silicon nitride non-volatile memory and implementation method thereof
02/12/2014CN101515476B Nonvolatile semiconductor memory device
02/12/2014CN101467215B Auxiliary output device
02/12/2014CN101329915B Method for programming storing device
02/11/2014US8650353 Apparatus, system, and method for refreshing non-volatile memory
02/11/2014US8649228 Output driver and electronic system comprising same
02/11/2014US8649227 Nonvolatile semiconductor memory device
02/11/2014US8649225 Non-volatile semiconductor memory device and memory system
02/11/2014US8649221 Nonvolatile semiconductor memory device
02/11/2014US8649220 Nonvolatile semiconductor memory
02/11/2014US8649216 Data writing method and data storage device for adjusting programming voltage values
02/11/2014US8649215 Data management in flash memory using probability of charge disturbances
02/06/2014WO2014022518A1 Memory cell state in a valley between adjacent data states
02/06/2014WO2014022281A1 Bitline voltage regulation in non-volatile memory
02/06/2014WO2014019156A1 Variable erase for thermally rewritable cards
02/06/2014US20140036601 Temperature based compensation during verify operations for non-volatile storage
02/06/2014US20140036600 Nonvolatile semiconductor memory device
02/06/2014US20140036599 Semiconductor memory device and method of operating the same
02/06/2014US20140036598 Semiconductor memory device and operating method thereof
02/06/2014US20140036597 Non-volatile semiconductor memory device and reading-out method therefore
02/06/2014US20140036596 Sense Amplifier for Flash Memory
02/06/2014US20140036595 Bitline voltage regulation in non-volatile memory
02/06/2014US20140036594 Nonvolatile memory device and related method of operation
02/06/2014US20140036593 Nonvolatile memory devices, memory systems and methods of performing read operations
02/06/2014US20140036592 Semiconductor storage device
02/06/2014US20140036591 Memory device
02/06/2014US20140036590 Partial block memory operations
02/06/2014US20140036589 Memory cell state in a valley between adjacent data states
02/06/2014US20140036588 Method of programming a multi-level memory device
02/06/2014US20140036587 Structure and Method for Narrowing Voltage Threshold Distribution In Non-Volatile Memories
02/06/2014US20140036586 Memory device having a different source line coupled to each of a plurality of layers of memory cell arrays
02/05/2014CN103563001A Method and apparatus to reset a phase change memory and switch (pcms) memory cell
02/05/2014CN103562883A Dynamic memory cache size adjustment in a memory device
02/05/2014CN103559911A Method for improving cycle durability of chip
02/05/2014CN103559910A System and method applied in programming unit to realize intelligent switching of programmed chip timing
02/05/2014CN103559905A Semiconductor device with main memory unit and auxiliary memory unit requiring preset operation
02/05/2014CN102005243B Differential flash memory device and method for enhancing durability of same
02/04/2014US8644089 Semiconductor memory device
02/04/2014US8644081 Flash memory device and programming method thereof
02/04/2014US8644080 Incremental memory refresh
02/04/2014US8644078 Pulse control for nonvolatile memory
02/04/2014US8644077 Memory device, manufacturing method and operating method of the same
02/04/2014US8644072 Three dimensionally stacked memory and the isolation of memory cell layer
02/04/2014US8644071 Flash memory apparatus capable of extending data retention and improving data reliability, and method for controlling the same
02/04/2014US8644070 Cell deterioration warning apparatus and method
02/04/2014US8644067 Systems and methods of decoding data using soft bits at a non-binary decoder that uses probabilistic decoding
02/04/2014US8644066 Multi-level non-volatile memory device, system and method with state-converted data
02/04/2014US8644065 Memory system with user configurable density/performance option
02/04/2014US8644064 Memory semiconductor device and method of operating the same
01/2014
01/30/2014WO2014018264A1 Non-volatile memory and method with peak current control
01/30/2014WO2014018074A1 Ultra-deep power-down mode for memory devices
01/30/2014US20140032823 Memory block identified by group of logical block addresses, storage device with movable sectors, and methods
01/30/2014US20140029369 Memory device, controller, and write control method
01/30/2014US20140029355 Memory device and method of determining read voltage of memory device
01/30/2014US20140029353 Methods and devices for memory reads with precharged data lines
01/30/2014US20140029352 Vertical memory with body connection
01/30/2014US20140029351 Methods and systems for adjusting nvm cell bias conditions for program/erase operations to reduce performance degradation
01/30/2014US20140029350 Methods and systems for adjusting nvm cell bias conditions for read/verify operations to compensate for performance degradation
01/30/2014US20140029349 Voltage generation and adjustment in a memory device
01/30/2014US20140029348 Dynamic programming for flash memory
01/30/2014US20140029347 Memory system having a plurality of serially connected devices
01/30/2014US20140029346 Charge pump redundancy in a memory
01/30/2014US20140029345 Memory devices and programming memory arrays thereof
01/30/2014US20140029344 Nonvolatile memory device, programming method thereof and memory system including the same
01/30/2014US20140029343 Nonvolatile semiconductor memory device
01/30/2014US20140029342 Experience count dependent program algorithm for flash memory
01/30/2014US20140029341 Non-volatile solid state memory-based mass storage device and methods thereof
01/30/2014US20140029340 Structures and operational methods of non-volatile dynamic random access memory devices
01/30/2014US20140029339 Nonvolatile semiconductor memory device and method for its use
01/30/2014US20140029338 Storage at m bits/cell density in n bits/cell analog memory cell devices, m>n
01/30/2014US20140029337 Semiconductor memory device which stores plural data in a cell
01/30/2014US20140029336 Systems and methods of updating read voltages
01/30/2014US20140029335 Methods and systems for adjusting nvm cell bias conditions based upon operating temperature to reduce performance degradation
01/29/2014EP2690630A1 Semi-conductor component and method for operation
01/29/2014EP2690629A2 Methods and systems for adjusting nvm cell bias conditions for program/erase operations to reduce performance degradation
01/29/2014EP2690628A1 Methods and systems for adjusting NVM cell bias conditions based upon operating temperature to reduce performance degradation
01/29/2014EP2689424A2 Non-volatile memory programming
01/29/2014EP1866929B1 Compensating for coupling during read operations of non-volatile-memory
01/29/2014CN103548087A Single transistor driver for address lines in a phase change memory and switch (PCMS) array
01/29/2014CN103544993A Nonvolatle memory device and memory system, and related memory management, erase and programming method
01/29/2014CN103544992A Nonvolatile high-speed storage unit as well as storage device and inner data unloading control method of storage device
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