Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
11/2013
11/05/2013US8576628 Nonvolatile random access memory
11/05/2013US8576627 Memory array with inverted data-lines pairs
11/05/2013US8576626 Flash memory system capable of operating in a random access mode
11/05/2013US8576625 Decoder parameter estimation using multiple memory reads
11/05/2013US8576624 On chip dynamic read for non-volatile storage
11/05/2013US8576623 Non-volatile semiconductor storage device
11/05/2013US8576622 Non-volatile memory device and read method thereof
11/05/2013US8576603 Flash- and ROM-memory
10/2013
10/31/2013WO2013162598A1 Local checkpointing using a multi-level cell
10/31/2013WO2013111371A3 Flash nand memory device with stacked blocks and common wordlines
10/31/2013US20130290612 Soft information module
10/31/2013US20130286748 Nonvolatile semiconductor storage device
10/31/2013US20130286747 Nonvolatile memory device and related method of operation
10/31/2013US20130286746 Semiconductor memory device and operating method thereof
10/31/2013US20130286744 Bit Line Bias Circuit With Varying Voltage Drop
10/31/2013US20130286743 Non-volatile memory programming
10/31/2013US20130286742 Semiconductor memory device and test method of the same
10/31/2013US20130286741 Over-sampling read operation for a flash memory device
10/31/2013US20130286740 Eeprom cell with transfer gate
10/31/2013US20130286739 Methods of reading memory cells
10/31/2013US20130286738 Semiconductor memory apparatus
10/31/2013US20130286737 Nand flash memory having c/a pin and flash memory system including the same
10/31/2013US20130286736 Determining and using soft data in memory devices and systems
10/31/2013US20130286735 Vertical structure semiconductor memory devices and methods of manufacturing the same
10/31/2013US20130286734 Nand flash memory
10/31/2013US20130286733 Method of programming/reading a non-volatile memory with a sequence
10/31/2013US20130286732 Flash memory devices having multi-bit memory cells therein with improved read reliability
10/31/2013US20130286731 Memory device, memory control device, and memory control method
10/31/2013US20130286730 Semiconductor memory device which stores multilevel data
10/30/2013EP2656349A1 Alternate bit line bias during programming to reduce channel-to-floating gate coupling in memory
10/30/2013EP2656224A1 Continuous page read for memory
10/30/2013CN103377709A Non-volatile memory, semiconductor device and reading method
10/30/2013CN103377708A Read amplification circuit for nonvolatile memory and memory
10/30/2013CN103377707A Erasing a non-volatile memory (nvm) system having error correction code (ecc)
10/30/2013CN103377706A Nonvolatile memory device cell and method for configuring or reading storage bits of nonvolatile memory device cell
10/30/2013CN103377705A Latch circuit, nonvolatile memory device and integrated circuit
10/30/2013CN103377704A Memory device, memory control device, and memory control method
10/30/2013CN103377703A Non-volatile memory and semiconductor device
10/30/2013CN103377702A Recording apparatus, imaging and recording apparatus, recording method, and program
10/30/2013CN103377701A 半导体存储器装置 The semiconductor memory device
10/30/2013CN103377700A Methods and apparatus for non-volatile memory cells
10/30/2013CN103377697A Method for blocking current leakage through defective memory cells in memory array
10/30/2013CN103377684A Semiconductor memory device and writing method of ID codes and upper addresses
10/30/2013CN103377139A Storage controlling apparatus, memory system, information processing system and storage controlling method
10/30/2013CN103377136A Memory management method, storage device, and computer with the same
10/30/2013CN101989458B Method and memory device for averagely using plurality of blocks of flash memory, and controller
10/30/2013CN101842844B Non-volatile multilevel memory cells
10/30/2013CN101814320B Memory circuit, system and operation methods thereof
10/30/2013CN101595527B Faster programming of highest multi-level state for non-volatile memory
10/30/2013CN101461012B 编程非易失性存储器装置 Programming non-volatile memory device
10/29/2013US8570814 Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
10/29/2013US8570812 Method of reading a ferroelectric memory cell
10/29/2013US8570810 Intelligent control of program pulse for non-volatile storage
10/29/2013US8570809 Flash memory devices and systems
10/29/2013US8570808 Nonvolatile memory device with 3D memory cell array
10/29/2013US8570807 NAND architecture memory with voltage sensing
10/29/2013US8570806 Z-direction decoding for three dimensional memory array
10/29/2013US8570805 Nonvolatile memory device, programming method thereof and memory system including the same
10/29/2013US8570804 Distortion estimation and cancellation in memory devices
10/29/2013US8570802 Nonvolatile semiconductor memory device capable of speeding up write operation
10/24/2013WO2013158633A1 Snapshots in a flash memory storage system
10/24/2013WO2013158557A1 Erase operation for 3d non volatile memory with controllable gate-induced drain leakage current
10/24/2013WO2013158556A1 Soft erase operation for 3d non-volatile memory with selective inhibiting of passed bits
10/24/2013US20130279268 Eeprom cell with storage capacitor
10/24/2013US20130279267 Methods and systems for erase biasing of split-gate non-volatile memory cells
10/24/2013US20130279266 Complementary electrical erasable programmable read only memory
10/24/2013US20130279265 Method and Apparatus for Reducing Erase Time of Memory By Using Partial Pre-Programming
10/24/2013US20130279264 Nonvolatile memory device, system and programming method with dynamic verification mode selection
10/24/2013US20130279263 Nonvolatile memory and method for improved programming with reduced verify
10/24/2013US20130279262 Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same
10/24/2013US20130279261 Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell
10/24/2013US20130279260 Non-volatile memory device and method for programming the device, and memory system
10/24/2013US20130279259 Hafnium tantalum oxynitride dielectric
10/24/2013US20130279258 Program condition dependent bit line charge rate
10/24/2013US20130279257 Erase Operation For 3D Non-Volatile Memory With Controllable Gate-Induced Drain Leakage Current
10/24/2013US20130279256 Soft Erase Operation For 3D Non-Volatile Memory With Selective Inhibiting Of Passed Bits
10/24/2013US20130279255 Semiconductor memory device and method for controlling the same
10/24/2013US20130279253 Semiconductor memory device and writing method of id codes and upper addresses
10/24/2013US20130279252 Dynamically configurable mlc state assignment
10/24/2013US20130279251 Novel shielding 2-cycle half-page read and program schemes for advanced nand flash design
10/24/2013US20130279250 Nonvolatile memory device with flag cells and user device including the same
10/24/2013US20130279249 Operating method of memory system including nand flash memory, variable resistance memory and controller
10/24/2013US20130279248 Data Retention in Nonvolatile Memory with Multiple Data Storage Formats
10/24/2013DE102013103391A1 Betriebsverfahren eines Controllers, der eine nichtflüchtige Speichervorrichtung steuert, und Mappingmuster-Auswahlverfahren zum Auswählen eines Mappingmusters, das ein polar codiertes Codewort Multibitdaten einer nichtflüchtigen Speichervorrichtung zuordnet Method of operation of a controller which controls a non-volatile memory device, and mapping pattern selection method for selecting a mapping pattern that maps a polar multi-bit encoded code word of a non-volatile memory device
10/23/2013EP2654041A2 Programmming based on controller performance requirements
10/23/2013EP2652789A1 Memory device comprising a strained semiconductor double-heterostructure and quantum dots
10/23/2013EP2652742A2 Methods for segmented programming and memory devices
10/23/2013EP2652741A1 Memory controller and method for interleaving dram and mram accesses
10/23/2013CN103370746A Memories and methods of programming memories
10/23/2013CN103367368A Multiple-time programming memory cells and methods for forming the same
10/23/2013CN103366829A Stepper motor power-outage displacement recovery device and method
10/23/2013CN103366828A Storage device and detection method thereof
10/23/2013CN103366818A Programming method of flash memory device
10/23/2013CN103366817A NOR flash memory
10/23/2013CN103366816A 非易失性半导体存储器器件 The nonvolatile semiconductor memory device
10/23/2013CN103366815A Power-off protection circuit and electronic device provided with same
10/23/2013CN103366814A Flash data security protection circuit and method
10/23/2013CN103366813A Erasing method of nonvolatile memory
10/23/2013CN103366812A Device for Flash online programming on circuit board and implementation method
10/23/2013CN103366811A Programming method of multi-bit semiconductor memory
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