Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
08/2007
08/29/2007EP1825476A1 Memory sensing circuit and method for low voltage operation
08/29/2007EP1665280A4 Eeprom architecture and programming protocol
08/29/2007EP1522078B1 Erasable and programmable non-volatile cell
08/29/2007EP1493158B1 Single-ended current sense amplifier
08/29/2007CN101027842A Encoding of data words using three or more level levels
08/29/2007CN101027730A Semiconductor device and method for generating sense signal
08/29/2007CN101027729A Method for initializing non-volatile storage device, and non-volatile storage device
08/29/2007CN101027728A 半导体装置及写入方法 Semiconductor device and method of writing
08/29/2007CN101026177A Nonvolatile memory device and its operating method
08/29/2007CN101026168A Dual gate multi-bit semiconductor memory array
08/29/2007CN101026009A Page buffer and related reading method
08/29/2007CN101026008A Page buffer and driving method in nonvolatile memory device
08/29/2007CN101026007A Method for reducing flash rom setting time and improved flash memory
08/29/2007CN100334716C Method of programming coding of read-only memory devices and read-only memory formed thereby
08/29/2007CN100334565C Data management apparatus and method of flash memory
08/28/2007US7263591 Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
08/28/2007US7263022 No-precharge FAMOS cell and latch circuit in a memory device
08/28/2007US7263017 AC sensing for a resistive memory
08/28/2007US7263012 Semiconductor storage device
08/28/2007US7263006 Memory block erasing in a flash memory device
08/28/2007US7263005 Method of programming a non-volatile memory cell by controlling the channel current during the rise period
08/28/2007US7263002 Nonvolatile semiconductor memory device that achieves speedup in read operation
08/28/2007US7263000 NAND type memory with dummy cells adjacent to select transistors being biased at different voltage during data erase
08/28/2007US7262999 System and method for preventing read margin degradation for a memory array
08/28/2007US7262998 Non-volatile system with program time control
08/28/2007US7262997 Process for operating an electronic device including a memory array and conductive lines
08/28/2007US7262996 Programmable soft-start control for charge pump
08/28/2007US7262995 Method for reading flash memory cell, NAND-type flash memory apparatus, and NOR-type flash memory apparatus
08/28/2007US7262993 Nonvolatile semiconductor memory device
08/28/2007US7262457 Non-volatile memory cell
08/28/2007US7262455 Nonvolatile semiconductor memory device and nonvolatile semiconductor memory system
08/23/2007WO2007095217A1 Single latch data circuit in a multiple level cell non-volatile memory device
08/23/2007US20070198770 Memory system and memory card
08/23/2007US20070196696 Thin film memory device having a variable resistance
08/23/2007US20070195665 Storage and reproduction apparatus
08/23/2007US20070195610 Flash memory devices, methods of erasing flash memory devices and memory systems including the same
08/23/2007US20070195609 Non-volatile memory device and method of operation therefor
08/23/2007US20070195608 Germanium-silicon-carbide floating gates in memories
08/23/2007US20070195607 Nrom non-volatile memory and mode of operation
08/23/2007US20070195606 Nonvolatile semiconductor memory device and method of rewriting data thereof
08/23/2007US20070195603 Minimizing effects of program disturb in a memory device
08/23/2007US20070195602 Reducing floating gate to floating gate coupling effect
08/23/2007US20070195601 Nonvolatile semiconductor memory device that achieves speedup in read operation
08/23/2007US20070195600 Multiple level cell memory device with single bit per cell, re-mappable memory block
08/23/2007US20070195599 Data storage
08/23/2007US20070195598 Accessing semiconductor memory device according to an address and additional access information
08/23/2007US20070195597 Non-Volatile Memory Devices that Utilize Mirror-Image Programming Techniques to Inhibit Program Coupling Noise and Methods of Programming Same
08/23/2007US20070195596 Semiconductor integrated circuit device, production and operation method thereof
08/23/2007US20070195595 Nonvolatile memory device
08/23/2007US20070195582 Semiconductor device
08/23/2007US20070195575 Semiconductor integrated circuit
08/23/2007US20070194116 Roll back method for a smart card
08/23/2007DE112005002286T5 Steuern von Speicherbauelementen mit variablen Widerstandseigenschaften Control of memory devices with variable resistance characteristics
08/23/2007DE112005002275T5 Technik zum Lesen von Mehrpegelspeichern mit virtueller Masse Technology for reading multilevel Save virtual ground
08/23/2007DE10012105B4 Device for holding wheelchair at holding frame of motor-operated wheeled vehicle, has cable tightened against pretensioning of compression spring so that locking element is displaced from locking position into releasing position
08/22/2007EP1821312A1 Data transfer method and system including a volatile and a non-volatile memory
08/22/2007EP1665281B1 Boosted substrate/tub programming for flash memories
08/22/2007CN1333407C Data reservation of local trapped type nonvolatile memory
08/22/2007CN1333358C In-circuit configuration architecture with configuration on initialization function
08/22/2007CN1333357C In-circuit configuration architecture with non-volatile configuration store
08/22/2007CN101023497A Nonvolatile storage and erasing method for nonvolatile storage
08/22/2007CN101023496A Write protection using a two signal control protocol for an integrated circuit device having parameter change capability, chip select and selectable write to non-volatile memory
08/22/2007CN101023495A Read approach for multi-level virtual ground memory
08/22/2007CN101023494A 多用途非易失性存储卡 Multipurpose nonvolatile memory card
08/22/2007CN101023492A Semiconductor memory device with mos transistors each having floating gate and control gate
08/22/2007CN101022134A Dual-gate, non-volatile memory cells, arrays thereof, methods of manufacturing the same and methods of operating the same
08/22/2007CN101022133A Electric erasable and programable nonvolatile storage and array and operating method thereof
08/22/2007CN101022120A A programming method for a threshold pressure-controlled phase-change random access memory
08/22/2007CN101022116A 半导体存储装置 The semiconductor memory device
08/22/2007CN101022113A Non-volatile memory and producing method and operating method thereof
08/22/2007CN101022110A Nonvolatile memory and producing method and operating method thereof
08/22/2007CN101022038A Burst read circuit in semiconductor memory device and burst data read method thereof
08/22/2007CN101022037A Erase operation for use in non-volatile memory
08/22/2007CN101022036A 半导体存储器件 A semiconductor memory device
08/21/2007US7260670 Non-volatile semiconductor memory device and electric device with the same
08/21/2007US7260247 Card type device capable of reading fingerprint and fingerprint identification system
08/21/2007US7260016 Non-volatile semiconductor memory device and writing method therefor
08/21/2007US7259996 Flash memory
08/21/2007US7259995 Memory device
08/21/2007US7259992 Semiconductor memory device with a memory cell array formed on a semiconductor substrate
08/21/2007US7259991 Operation of multiple select gate architecture
08/21/2007US7259989 Non-volatile memory device
08/21/2007US7259988 Method for managing memory blocks in flash memory
08/21/2007US7259987 Systems for variable programming of non-volatile memory
08/21/2007US7259984 Multibit metal nanocrystal memories and fabrication
08/21/2007US7259387 Nonvolatile semiconductor memory device
08/21/2007US7259067 Method for manufacturing flash memory device
08/16/2007WO2007092536A2 Memory array segmentation and methods
08/16/2007WO2007090857A1 Method of secure updating of a nonvolatile memory
08/16/2007WO2007090432A1 An electronic device having a memory element and method of operation therefor
08/16/2007WO2007076512A3 Methods and device for improved program-verify operations in non-volatile memories
08/16/2007WO2006026309A3 System and method for preserving an error margin for a non-volatile memory
08/16/2007US20070189091 Noise suppression in memory device sensing
08/16/2007US20070189082 Method for implementing a counter in a memory with increased memory efficiency
08/16/2007US20070189081 Method and apparatus for erasing memory
08/16/2007US20070189080 Erase operation for use in non-volatile memory
08/16/2007US20070189079 Memory device with page buffer having dual registers and method of using the same
08/16/2007US20070189078 Semiconductor flash memory
08/16/2007US20070189077 Semiconductor memory device
08/16/2007US20070189076 Memory elements and methods of using the same
1 ... 195 196 197 198 199 200 201 202 203 204 205 206 207 208 209 210 211 212 213 214 215 ... 444