Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
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08/07/2007 | US7254060 Nonvolatile semiconductor memory device |
08/07/2007 | US7254056 Apparatus for optically pre-programming electrically-programmable phase-change memory devices |
08/07/2007 | US7254055 Initial firing method and phase change memory device for performing firing effectively |
08/07/2007 | US7253676 Semiconductor device and driving method of semiconductor device |
08/07/2007 | US7253055 Pillar cell flash memory technology |
08/02/2007 | WO2007087097A2 Nonvolatile memory and method of program inhibition |
08/02/2007 | WO2007086214A1 Tester and selector |
08/02/2007 | WO2007085893A1 Method for utilizing a memory interface to control partitioning of a memory module |
08/02/2007 | WO2006121529A3 Method and apparatus for incorporating block redundancy in a memory array |
08/02/2007 | US20070178643 Memory utilizing oxide-conductor nanolaminates |
08/02/2007 | US20070178635 Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interpoly insulators |
08/02/2007 | US20070177431 Semiconductor integrated circuit device |
08/02/2007 | US20070177427 Nonvolatile memory device and method thereof |
08/02/2007 | US20070177426 System and method for automated delivery of software payload |
08/02/2007 | US20070177425 A method and apparatus for repairing embedded memory in an integrated circuit |
08/02/2007 | US20070177424 Device with n-time pad and a method of managing such a pad |
08/02/2007 | US20070177423 Flash memory device having bit lines decoded in irregular sequence |
08/02/2007 | DE10153384B4 Halbleiterspeicherzelle, Verfahren zu deren Herstellung und Halbleiterspeichereinrichtung A semiconductor memory cell, process for their preparation and the semiconductor memory device |
08/01/2007 | EP1814148A2 Floating-gate memory cell with an auxiliary gate |
08/01/2007 | EP1814123A1 Nand-type nonvolatile memory device having common bit lines and methods of operating the same |
08/01/2007 | EP1814122A1 Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory in multiple-data states |
08/01/2007 | EP1814121A1 Non-volatile EEPROM type memory architecture |
08/01/2007 | EP1812932A1 High speed programming system with reduced over programming |
08/01/2007 | EP1743339A4 Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer |
08/01/2007 | EP1450259B1 Flash memory |
08/01/2007 | EP1410399A4 Method and apparatus for decreasing block write operation times performed on nonvolatile memory |
08/01/2007 | EP1312095B1 Method and structure for reliable data copy operation for non-volatile memories |
08/01/2007 | EP1060515B1 Method for producing an electrically programmable memory cell arrangement |
08/01/2007 | CN1329924C Novel method and structure for reliable data copy operation for non-volatile memories |
08/01/2007 | CN1329915C Steering gate and bit line segmentation in non-volatile memories |
08/01/2007 | CN1329842C Method and apparatus for performing cache storage of block in non-volatile memory system |
08/01/2007 | CN101010668A Volatile storage based power loss recovery mechanism |
08/01/2007 | CN101009287A Nonvolatile memory device having common bit lines |
08/01/2007 | CN101009139A Program method of flash memory capable of compensating reduction of read margin between states due to hot temperature stress |
08/01/2007 | CN101009138A Program method of flash memory |
08/01/2007 | CN101009137A Flash memory system compensating reduction in read margin between memory cell program states |
08/01/2007 | CN101009136A 半导体存储装置 The semiconductor memory device |
07/31/2007 | US7251717 Semiconductor memory device |
07/31/2007 | US7251711 Apparatus and methods having a command sequence |
07/31/2007 | US7251705 Embeddable flash memory system for non-volatile storage of code, data and bit-streams for embedded FPGA configurations |
07/31/2007 | US7251190 Non-volatile semiconductor memory device |
07/31/2007 | US7251187 Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure |
07/31/2007 | US7251181 Techniques for storing accurate operating current values |
07/31/2007 | US7251167 Method for programming multi-level nitride read-only memory cells |
07/31/2007 | US7251166 Method for verifying a programmed flash memory |
07/31/2007 | US7251165 Semiconductor flash memory |
07/31/2007 | US7251164 Circuitry for and method of improving statistical distribution of integrated circuits |
07/31/2007 | US7251163 Flash memory device including bit line voltage clamp circuit for controlling bit line voltage during programming, and bit line voltage control method thereof |
07/31/2007 | US7251162 Nonvolatile memory with multi-frequency charge pump control |
07/31/2007 | US7251159 Data encoding approach for implementing robust non-volatile memories |
07/31/2007 | US7251158 Erase algorithm for multi-level bit flash memory |
07/31/2007 | US7251151 Non-volatile memory comprising means for distorting the output of memory cells |
07/26/2007 | WO2007084751A2 Flash memory with coding and signal processing |
07/26/2007 | WO2007084749A2 Method and system for error correction in flash memory |
07/26/2007 | WO2007084217A1 Random cache read using a double memory |
07/26/2007 | WO2007084079A1 Portable data storage device incorporating multiple flash memory units |
07/26/2007 | WO2007083790A1 Sequential access memory |
07/26/2007 | US20070171730 Method and system for error correction in flash memory |
07/26/2007 | US20070171729 Memory block erasing in a flash memory device |
07/26/2007 | US20070171728 Nor flash memory and erase method thereof |
07/26/2007 | US20070171727 Flash Memory Device with Program Current Compensation |
07/26/2007 | US20070171726 Program method of flash memory capable of compensating reduction of read margin between states due to hot temperature stress |
07/26/2007 | US20070171724 Counteracting overtunneling in nonvolatile memory cells |
07/26/2007 | US20070171723 NOR flash memory and related read method |
07/26/2007 | US20070171722 Flash memory system compensating reduction in read margin between memory cell program states |
07/26/2007 | US20070171721 Semiconductor memory device capable of high-speed cache read operation |
07/26/2007 | US20070171720 Nonvolatile semiconductor storage device |
07/26/2007 | US20070171719 Method for programming non-volatile memory with reduced program disturb using modified pass voltages |
07/26/2007 | US20070171718 Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages |
07/26/2007 | US20070171717 Dynamic matching of signal path and reference path for sensing |
07/26/2007 | US20070171716 System and method for visualizing configurable analytical spaces in time for diagrammatic context representations |
07/26/2007 | US20070171715 Non-volatile semiconductor memory device using adjacent bit lines for data transmission and method of driving the same |
07/26/2007 | US20070171714 Flash memory with coding and signal processing |
07/26/2007 | US20070171713 Electronic device and method for operating a memory circuit |
07/26/2007 | US20070171712 Bitline transistor architecture for flash memory |
07/26/2007 | US20070171711 Non-volatile memory device and method of operation therefor |
07/26/2007 | US20070171710 Semiconductor storage device and method of using semiconductor storage device |
07/26/2007 | US20070171709 Program method for flash memory capable of compensating for the reduction of read margin between states |
07/26/2007 | US20070171708 Multi-level memory cell sensing |
07/26/2007 | US20070171707 Nonvolatile carbon nanotube memory device using multiwall carbon nanotubes and methods of operating and fabricating the same |
07/26/2007 | US20070170958 High voltage driver circuit with fast slow voltage operation |
07/26/2007 | US20070170589 Semiconductor integrated circuit |
07/25/2007 | EP1673781B1 Memory cell array with staggered local inter-connect structure |
07/25/2007 | CN1328646C Semiconductor device containing changeable detdcting circuit and its starting method |
07/25/2007 | CN101006521A Test device and test method |
07/25/2007 | CN101006520A Non-volatile semiconductor device and method for automatically correcting non-volatile semiconductor device erase operation failure |
07/25/2007 | CN101006519A Variable programming of non-volatile memory |
07/25/2007 | CN101006518A Sector protection circuit and sector protection method for non-volatile semiconductor storage device, and non-volatile semiconductor storage device |
07/25/2007 | CN101006517A Electrical device and method of manufacturing therefor |
07/25/2007 | CN101005113A Method for forming self-aligned thermal isolation cell for a variable resistance memory array |
07/25/2007 | CN101005112A Non-volatile memory element and method of manufacturing the same |
07/25/2007 | CN101005081A Non-volatile memory device, and manufacturing method and programming method thereof |
07/25/2007 | CN101005080A Architecture for assisted-charge memory array |
07/25/2007 | CN101005078A Gate control diode non-volatile memory unit operation method |
07/25/2007 | CN101005076A Erasing method for non-volatile storage |
07/25/2007 | CN101004951A Nonvolatile semiconductor memory device and programming or erasing method therefor |
07/25/2007 | CN101004950A Semiconductor memory device capable of high-speed cache read operation |
07/25/2007 | CN101004949A Nand type multi-bit charge storage memory array and methods for operating and fabricating the same |
07/25/2007 | CN101004948A Nonvolatile memory device and system , and related method |
07/25/2007 | CN101004664A Memory cards, nonvolatile memories and methods for copy-back operations thereof |