Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
10/2009
10/07/2009CN201323062Y Nonvolatile memory device with power supply capacity
10/07/2009CN101553877A NAND flash memory cell array and method with adaptive memory state partitioning
10/07/2009CN101553876A Non-volatile memory serial core architecture
10/07/2009CN101552603A Read-write drive circuit of phase transformation storage unit
10/07/2009CN101552275A Memory cell structure, memory device and integrated circuit
10/07/2009CN101552039A Method for driving a nonvolatile semiconductor memory device
10/07/2009CN101552038A Non-volatile semiconductor memory device
10/07/2009CN101552037A Method and device for erasing nonvolatile memory
10/07/2009CN101552036A Flash memory device having dummy cells and method of operating the same
10/07/2009CN101552030A Flash memory device for regulating storage efficiency
10/07/2009CN101551763A Method and device for repairing single event upset in field programmable logic gate array
10/07/2009CN100547961C 内容处理装置 The content processing device
10/07/2009CN100547689C Selection circuit for accurate memory read operations
10/07/2009CN100547688C Program-verifying method of non-volatile memory device
10/07/2009CN100547687C Method for selectively programming memory unit and programmable non-volatile memory system
10/07/2009CN100547686C Flash cell fuse circuit and method of fusing a flash cell
10/07/2009CN100547685C Non-volatile memory device and method for operation page buffer thereof
10/07/2009CN100547684C Non-volatile storage and its related limit voltage verification method and semiconductor device
10/07/2009CN100547683C Flash memory and method for accessing the same
10/07/2009CN100547570C Method for operating erasable and reprogrammable non-volatile memory system
10/06/2009US7600068 Programmable control interface device
10/06/2009US7599228 Flash memory device having increased over-erase correction efficiency and robustness against device variations
10/06/2009US7599227 Reduced power programming of non-volatile cells
10/06/2009US7599225 Method of programming and erasing a non-volatile memory array
10/06/2009US7599223 Non-volatile memory with linear estimation of initial programming voltage
10/06/2009US7599220 Charge trapping memory and accessing method thereof
10/06/2009US7599218 Phase change memory comprising a low-voltage column decoder
10/06/2009US7598563 Memory device and method for manufacturing the same
10/01/2009WO2009120691A1 Random access memory with cmos-compatible nonvolatile storage element
10/01/2009WO2009120275A2 Phase change memory
10/01/2009WO2009119658A1 Nonvolatile semiconductor memory element and semiconductor device
10/01/2009US20090245004 Semiconductor device including multi-chip
10/01/2009US20090244985 Method for erasing a p-channel non-volatile memory
10/01/2009US20090244984 Method for driving a nonvolatile semiconductor memory device
10/01/2009US20090244983 Flash memory device and program method thereof
10/01/2009US20090244982 Memory block reallocation in a flash memory device
10/01/2009US20090244981 Non-volatile semiconductor memory device and its writing method
10/01/2009US20090244980 Method for reducing lateral movement of charges and memory device thereof
10/01/2009US20090244979 Erase degradation reduction in non-volatile memory
10/01/2009US20090244978 Semiconductor memory device
10/01/2009US20090244977 Variable initial program voltage magnitude for non-volatile storage
10/01/2009US20090244976 Non-volatile semiconductor memory device
10/01/2009US20090244975 Flash memory device and block selection circuit thereof
10/01/2009US20090244974 Memory system and data writing method
10/01/2009US20090244973 Memory Read-Out
10/01/2009US20090244972 Nonvolatile Semiconductor Memory Device and Usage Method Thereof
10/01/2009US20090244971 Memory cell structure, a memory device employing such a memory cell structure, and an integrated circuit having such a memory device
10/01/2009US20090244969 Semiconductor memory device comprising memory cell having charge accumulation layer and control gate and method of erasing data thereof
10/01/2009US20090244968 Semiconductor memory device including memory cell having charge accumulation layer and control gate
10/01/2009US20090244967 Flash memory device having dummy cells and method of operating the same
10/01/2009US20090244966 Threshold Evaluation Of EPROM Cells
10/01/2009DE102005019552B4 Verfahren zum Herstellen eines Flash-Speichers A method of manufacturing a flash memory
09/2009
09/30/2009CN101546810A Multilevel resistance conversion storage material containing germanium, antimony and selenium and application thereof
09/30/2009CN101546809A Memory devices and methods for manufacturing the same
09/30/2009CN101546604A Sensitive amplifier applied to EEPROM
09/30/2009CN101546603A Flash memory device and block selection circuit thereof
09/30/2009CN101546602A Nonvolatile memory device using variable resistance element
09/30/2009CN100545949C Multi-way flash accessing-data method
09/30/2009CN100545948C Semiconductor device for power down processing islands
09/30/2009CN100545947C Non-volatile memory device
09/30/2009CN100545946C Nonvolatile memory devices with test data buffers and methods for testing same
09/29/2009US7596042 Semiconductor memory device having a plurality of chips and capability of outputting a busy signal
09/29/2009US7596033 Nonvolatile semiconductor memory device
09/29/2009US7596032 Semiconductor device and control method therefor
09/29/2009US7596031 Faster programming of highest multi-level state for non-volatile memory
09/29/2009US7596030 Method for improving memory device cycling endurance by providing additional pulse
09/29/2009US7596029 Flash memory device including unified oscillation circuit and method of operating the device
09/29/2009US7596027 Semiconductor storage device having page copying function
09/29/2009US7596026 Program method of non-volatile memory device
09/29/2009US7596025 Semiconductor memory device and method of controlling semiconductor memory device
09/29/2009US7596024 Nonvolatile memory
09/29/2009US7596023 Memory device employing three-level cells and related methods of managing
09/29/2009US7596022 Method for programming a multi-level non-volatile memory device
09/29/2009US7596021 Memory system including MLC flash memory
09/29/2009US7596020 Multi-level nonvolatile semiconductor memory device capable of discretely controlling a charge storage layer potential based upon accumulated electrons
09/29/2009US7596019 Non-volatile memory device and method of preventing hot electron program disturb phenomenon
09/29/2009US7596016 Optically accessible phase change memory
09/29/2009US7595528 Nano-enabled memory devices and anisotropic charge carrying arrays
09/29/2009US7595527 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
09/24/2009WO2009117204A1 Adaptive algorithm in cache operation with dynamic data latch requirements
09/24/2009WO2009116715A1 Memory devices and methods
09/24/2009US20090241012 Memory controller
09/24/2009US20090238008 Non-Volatile Memory Cell With BTBT Programming
09/24/2009US20090238006 Adjusting programming or erase voltage pulses in response to the number of programming or erase failures
09/24/2009US20090238004 Method of operating sonos memory device
09/24/2009US20090238003 Non-volatile semiconductor memory device
09/24/2009US20090238002 Nand type non-volatile memory and operating method thereof
09/24/2009US20090237999 Different Combinations of Wordline Order and Look-Ahead Read to Improve Non-Volatile Memory Performance
09/24/2009US20090237998 Adaptive Algorithm in Cache Operation with Dynamic Data Latch Requirements
09/24/2009US20090237997 Random access memory with cmos-compatible nonvolatile storage element
09/24/2009US20090237994 Iterative Memory Cell Charging Based on Reference Cell Value
09/24/2009US20090237993 Nonvolatile semiconductor memory device and control method
09/24/2009US20090237992 Semiconductor memory device having stacked gate including charge accumulation layer and control gate
09/24/2009US20090237991 System for Operating a Memory Device
09/24/2009US20090237990 Sonos device with insulating storage layer and p-n junction isolation
09/24/2009US20090236428 Semiconductor Device
09/24/2009DE19733975B4 Speicherzelle und Verfahren zum Programmieren sowie Verfahren zum Lesen derselben Memory cell and method for programming and method of reading same
09/24/2009DE102008015585A1 Non-volatile memory element i.e. direct access phase-change RAM, for storing data, has set of global bit lines used together by memory banks, and set of main word lines arranged with corresponding memory banks
09/24/2009DE102008002237A1 Verfahren zum Prüfen einer nichtflüchtigen Speichervorrichtung A method of testing a non-volatile memory device
09/23/2009EP2102868A2 Method and system of low voltage programming of non-volatile memory cells
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