Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
12/2010
12/02/2010US20100302844 Method and apparatus for providing a non-volatile memory with reduced cell capacitive coupling
12/02/2010DE19923259B4 Speichereinrichtung und Verfahren zum Programmieren und Lesen einer Speichereinrichtung Memory device and method for programming and reading a memory device
12/02/2010DE102009022787A1 Electronic storage medium, particularly universal serial bus memory stick, has surface made of elastic material, which is provided with recess, where recess limits total area such that subarea is generated
12/01/2010EP2256748A1 Reducing read disturb for non-volatile storage
12/01/2010EP2256744A1 Non-volatile memory cell comprising a diode and a resistance-switching material
12/01/2010EP2256621A1 Writing of data in nonvolatile memory
12/01/2010EP1738374B1 Variable programming of non-volatile memory
12/01/2010EP1573745B1 Programmable interconnect cell for configuring a field programmable gate array
12/01/2010CN1976041B Non-volatile semiconductor memory device and method for manufacturing the same
12/01/2010CN1909111B Charge trap-type 3-level non-volatile semiconductor memory device and method of driving the same
12/01/2010CN101903955A Regulation of source potential to combat cell source IR drop
12/01/2010CN101901810A Memory device and methods for fabricating and operating the same
12/01/2010CN101901630A Phase change random access memory apparatus for controlling data transmission
12/01/2010CN101369455B Method for reducing programming interference of nitride read-only memory
12/01/2010CN101207178B Phase-change storage element and manufacturing method thereof
12/01/2010CN101162608B Marking method of memory block of flash memory
12/01/2010CN101067970B Method of operating a P-channel be-sonos NAND flash memory
11/2010
11/30/2010USRE41969 Multi-state EEPROM having write-verify control circuit
11/30/2010US7843739 System for verifying non-volatile storage using different voltages
11/30/2010US7843738 Sense amplifier with reduced area occupation for semiconductor memories
11/30/2010US7843737 Device for reading a low-consumption non-volatile memory and its implementing method
11/30/2010US7843735 Sensing memory cells
11/30/2010US7843734 Flash memory device and data I/O operation method thereof
11/30/2010US7843733 Flash memory devices having three dimensional stack structures and methods of driving same
11/30/2010US7843732 Methods of operating multi-bit flash memory devices and related systems
11/30/2010US7843731 Memory array architecture for a memory device and method of operating the memory array architecture
11/30/2010US7843730 Non-volatile memory with reduced charge fluence
11/30/2010US7843729 Methods and apparatus for using a configuration array similar to an associated data array
11/30/2010US7843728 Nonvolatile semiconductor storage device
11/30/2010US7843727 Memory device and data reading method
11/30/2010US7843726 Sensing against a reference cell
11/30/2010US7843725 M+L bit read column architecture for M bit memory cells
11/30/2010US7843723 Semiconductor memory device capable of reading data reliably
11/30/2010US7843722 Nonvolatile semiconductor memory device and programming method thereof
11/25/2010WO2010134141A1 Semiconductor memory device
11/25/2010US20100296348 Erase operation control sequencing apparatus, systems, and methods
11/25/2010US20100296347 Method of erasing device including complementary nonvolatile memory devices
11/25/2010US20100296346 Nand memory device column charging
11/25/2010US20100296345 Semiconductor memory device which includes memory cell having charge accumulation layer and control gate
11/25/2010US20100296344 Methods of operating nonvolatile memory devices
11/25/2010US20100296343 Non-Volatile Memory and Semiconductor Device
11/25/2010US20100296342 Nonvolatile semiconductor memory device
11/25/2010US20100296341 Semiconductor storage device and method of manufacturing same
11/25/2010US20100296340 Forming a nanotube channel between the source electrode and the drain electrode; forming an insulated floating gate for storing electric charges by passivating and depositing conductive nanoparticles (gold) on the nanotubes; any non-volatile memory devices; read-only memory (EEPROM) flash; computers
11/25/2010US20100296339 Nonvolatile semiconductor memory device having protection function for each memory block
11/25/2010DE10235986B4 Nichtflüchtige Speichervorrichtung mit einer schwebenden Trap-Speicherzelle und Verfahren zur Herstellung derselben A non-volatile memory device having a floating trap memory cell and method for manufacturing the same
11/25/2010DE10030990B4 Verfahren zum Beschreiben und Löschen eines nichtflüchtigen Speicherbereichs A method for writing and erasing a non-volatile memory area
11/24/2010EP2122704B1 Use of lacunar spinels with tetrahedral aggregates of a transition element of the of the am4x8 type in an electronic data rewritable non volatile memory, and corresponding material
11/24/2010EP2078302B1 Reducing program disturb in non-volatile storage using early source-side boosting
11/24/2010EP1149383B1 Trimmable reference generator
11/24/2010CN201655334U Nonvolatile memory protection system
11/24/2010CN201655333U System for burning energy efficiency identification in electronic product display module
11/24/2010CN201655332U Chip eraser
11/24/2010CN201655331U HDCP system avoiding repeated burning
11/24/2010CN201655330U Phase-change random memory
11/24/2010CN1538424B Information recording medium and its generating method
11/24/2010CN101894587A Self-limit writing pulse-generating circuit for phase-change memory
11/24/2010CN101894586A Programming voltage compensation circuit
11/24/2010CN101894585A Non-volatile semiconductor memory circuit with improved resistance distribution
11/24/2010CN101894582A Method, device and equipment for decoding storage data
11/24/2010CN101894082A Storage device and smartphone system
11/24/2010CN101170122B Non-volatile multi-bit memory device, its manufacture method and operation method
11/23/2010USRE41950 Multi-state EEPROM having write-verify control circuit
11/23/2010US7840746 Encoding method for flash memories
11/23/2010US7839696 Method of programming and erasing a p-channel BE-SONOS NAND flash memory
11/23/2010US7839694 Nonvolatile memory devices and data reading methods
11/23/2010US7839693 Method of fabricating CMOS-compatible non-volatile memory cell with lateral inter-poly programming layer
11/23/2010US7839692 Soft program method in a non-volatile memory device
11/23/2010US7839690 Adaptive erase and soft programming for memory
11/23/2010US7839689 Power supplies in flash memory devices and systems
11/23/2010US7839688 Flash memory device with improved programming operation voltages
11/23/2010US7839687 Multi-pass programming for memory using word line coupling
11/23/2010US7839686 Semiconductor memory device capable of executing high-speed read
11/23/2010US7839685 Soft errors handling in EEPROM devices
11/23/2010US7839684 Defective block handling method for a multiple data channel flash memory storage device
11/23/2010US7839682 Array and pitch of non-volatile memory cells
11/23/2010US7839680 Electrically erasable programmable read-only memory (EEPROM) cell and methods for forming and reading the same
11/23/2010US7839679 Nonvolatile semiconductor memory
11/23/2010US7839677 Nonvolatile memory, verify method therefor, and semiconductor device using the nonvolatile memory
11/23/2010US7838862 Phase random access memory with high density
11/18/2010WO2010132140A1 Wear leveling technique for storage devices
11/18/2010WO2010131198A2 A method circuit and system for operating an array of non-volatile memory ("nvm") cells and a corresponding nvm device
11/18/2010US20100293324 Direct logical block addressing flash memory mass storage architecture
11/18/2010US20100290293 Method of identifying logical information in a programming and erasing cell by on-side reading scheme
11/18/2010US20100290292 Semiconductor device
11/18/2010US20100290291 Semiconductor device and control method of the same
11/18/2010US20100290290 Nonvolatile semiconductor memory device
11/18/2010US20100290289 Operating memory cells
11/18/2010US20100290288 Nonvolatile memory device and method of testing the same
11/18/2010US20100290287 Method circuit and system for operating an array of non-volatile memory ("nvm") cells and a corresponding nvm device
11/18/2010US20100290286 Multi-page parallel program flash memory
11/18/2010US20100290285 Flash Memory Device Using Double Patterning Technology and Method of Manufacturing the Same
11/18/2010US20100290284 Single-Transistor EEPROM Array and Operation Methods
11/18/2010US20100290283 Programming Method for Flash Memory Device
11/18/2010US20100290282 Method and system for adaptively finding reference voltages for reading data from a mlc flash memory
11/17/2010EP2250566A1 Memory system
11/17/2010EP2052300B1 Method for programming a controller in a motor vehicle
11/17/2010EP1797566B1 Integrated circuit with memory cells comprising a programmable resistor and method for addressing memory cells comprising a programmable resistor
11/17/2010CN101889314A Sensing memory cells
11/17/2010CN101889313A Non-volatile memory with extended operating temperature range
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