Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
01/2011
01/04/2011US7864596 Sector configure registers for a flash device generating multiple virtual ground decoding schemes
01/04/2011US7864595 Nonvolatile memory cell, nonvolatile memory device, and method of programming the nonvolatile memory device
01/04/2011US7864594 Memory apparatus and method thereof for operating memory
01/04/2011US7864593 Method for classifying memory cells in an integrated circuit
01/04/2011US7864592 Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells
01/04/2011US7864591 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
01/04/2011US7864590 Non-volatile memory device and method of operating the same
01/04/2011US7864589 Mitigation of runaway programming of a memory device
01/04/2011US7864588 Minimizing read disturb in an array flash cell
01/04/2011US7864587 Programming a memory device to increase data reliability
01/04/2011US7864586 Non-volatile semiconductor memory device
01/04/2011US7864585 Multi level inhibit scheme
01/04/2011US7864584 Expanded programming window for non-volatile multilevel memory cells
01/04/2011US7864583 Erase verify for memory devices
01/04/2011US7864582 Nonvolatile memory devices and methods of operating same to inhibit parasitic charge accumulation therein
01/04/2011US7864581 Recovery method of NAND flash memory device
01/04/2011US7864580 Nonvolatile semiconductor storage device, nonvolatile semiconductor storage system and method of managing of defective column in nonvolatile semiconductor storage system
01/04/2011US7864579 Integrated circuits having a controller to control a read operation and methods for operating the same
01/04/2011US7864578 Semiconductor memory repairing a defective bit and semiconductor memory system
01/04/2011US7864577 Sharing physical memory locations in memory devices
01/04/2011US7864576 Nonvolatile memory cell array architecture for high speed reading
01/04/2011US7864575 Non-volatile multilevel memory cell programming
01/04/2011US7864573 Programming analog memory cells for reduced variance after retention
01/04/2011US7864572 Flash memory storage apparatus, flash memory controller, and switching method thereof
01/04/2011US7864571 Memory cell programming method and semiconductor memory device
01/04/2011US7864570 Self-boosting system with suppression of high lateral electric fields
01/04/2011US7863967 Multistage regulator for charge-pump boosted voltage applications
12/2010
12/30/2010US20100331045 Eeprom memory architecture optimized for embedded memories
12/30/2010US20100329038 Methods of operating memory devices including different sets of logical erase blocks
12/30/2010US20100329037 Circuit for supplying well voltages in nonvolatile memory device
12/30/2010US20100329036 Nonvolatile memory device and reading method thereof
12/30/2010US20100329035 Nonvolatile semiconductor memory device and discharge circuit thereof
12/30/2010US20100329034 Estimating values related to discharge of charge-storing memory cells
12/30/2010US20100329033 Nonvolatile semiconductor memory device
12/30/2010US20100329032 Method of programming nonvolatile memory device
12/30/2010US20100329031 Method of operating nonvolatile memory device
12/30/2010US20100329030 Nonvolatile memory device and method of programming the same
12/30/2010US20100329029 Page buffer, nonvolatile semiconductor memory device having the same, and program and data verification method
12/30/2010US20100329028 Method of performing program verification operation using page buffer of nonvolatile memory device
12/30/2010US20100329027 Nonvolatile memory device and method of operating the same
12/30/2010US20100329026 Semiconductor memory device with charge accumulation layer
12/30/2010US20100329025 Nonvolatile semiconductor storage device
12/30/2010US20100329024 Memory employing separate dynamic reference areas
12/30/2010US20100329023 Sense amplifier apparatus and methods
12/30/2010US20100329022 Method of programming nonvolatile memory device
12/30/2010US20100329021 Method of programming nonvolatile memory device
12/30/2010US20100329020 Method of programming nonvolatile memory device
12/30/2010US20100329019 Semiconductor storage device and electronic device using the same
12/30/2010US20100329018 Method of operating nonvolatile memory device capable of reading two planes
12/30/2010US20100329017 Semiconductor device for short-circuiting output terminals of two or more voltage generator circuits at read time and control method for the same
12/30/2010US20100329016 Semiconductor device
12/30/2010US20100329015 Method of operating nonvolatile memory device
12/30/2010US20100329014 Semiconductor memory device and method of reading the same
12/30/2010US20100329013 Semiconductor memory device including nonvolatile memory cell and data writing method thereof
12/30/2010US20100329012 Semiconductor memory device
12/30/2010US20100329011 Memory system having nand-based nor and nand flashes and sram integrated in one chip for hybrid data, code and cache storage
12/30/2010US20100329010 Read operation for memory with compensation for coupling based on write-erase cycles
12/30/2010US20100329009 Smart card capable of sensing light
12/30/2010US20100329008 Nonvolatile memory device
12/30/2010US20100329007 Pointer Based Column Selection Techniques in Non-Volatile Memories
12/30/2010US20100329006 Semiconductor memory device capable of memorizing multivalued data
12/30/2010US20100329005 Semiconductor memory device and programming method thereof
12/30/2010US20100329004 Detecting the completion of programming for non-volatile storage
12/30/2010US20100329003 Memory employing independent dynamic reference areas
12/30/2010US20100329002 Forecasting program disturb in memory by detecting natural threshold voltage distribution
12/30/2010DE102009023153A1 Memory element i.e. bipolar switching memory element, for resistive RAM, has memory cell connected in series with another memory cell, where each cell exhibits two stable states with respective high and low electrical resistances
12/29/2010WO2010151428A1 Detecting the completion of programming for non-volatile storage
12/29/2010WO2010151427A1 Forecasting program disturb in memory by detecting natural threshold voltage distribution
12/29/2010EP2267775A2 Independently programmable memory segments in isolated N-wells within a PMOS EEPROM array
12/29/2010EP2267725A1 Memory device for managing the recovery of a non volatile memory
12/29/2010EP2267724A1 EEPROM memory architecture optimised for embedded memories
12/29/2010EP2266117A1 Read reference technique with current degradation protection
12/29/2010EP1599881B1 Nand flash memory avoiding program disturb with a self boosting technique
12/29/2010EP1410395B1 Pair wise programming method for dual cell eeprom
12/29/2010CN201689685U Flash memory starting device
12/29/2010CN201689654U Data burning device
12/29/2010CN101933097A Hierarchical common source line structure in nand flash memory
12/29/2010CN101933095A Non-volatile memory device having configurable page size
12/29/2010CN101930801A Data sensing module and sensing circuit for flash memory
12/29/2010CN101930800A Method for erasing nonvolatile memory
12/29/2010CN101930799A Non-volatile memory with error checking/correcting circuit and methods thereof for reading and writing data
12/29/2010CN101930798A Flash memory device, memory device and method for controlling flash memory device
12/29/2010CN101930797A Fusion memory device and system
12/29/2010CN101930796A System and method for burning PCB panel with onboard AVR singlechip of same type
12/29/2010CN101930794A Synchronous flash memory with status burst output
12/29/2010CN101930402A Nonvolatile memory with error detection/correction circuit and reading and writing method thereof
12/29/2010CN101425339B Reading circuit for large capacity EEPROM memory
12/29/2010CN101388394B Vertical nonvolatile memory cell, array, and operation
12/29/2010CN101290970B Rewritable electrical storage with inorganic thin film and preparing method thereof
12/29/2010CN101237025B Nonvolatile memory devices and methods of fabricating the same
12/29/2010CN101174463B Multi-level cell copyback program method in a non-volatile memory device
12/29/2010CN101005081B Non-volatile memory device, and manufacturing method and programming method thereof
12/28/2010US7859914 Non-volatile memory device, non-volatile memory system and control method for the non-volatile memory device in which driving ability of a selector transistor is varied
12/28/2010US7859913 Semiconductor memory device
12/28/2010US7859912 Mid-size NVM cell and array utilizing gated diode for low current programming
12/28/2010US7859911 Circuit and system for programming a floating gate
12/28/2010US7859910 Nonvolatile semiconductor memory device
12/28/2010US7859909 Nonvolatile semiconductor memory device
12/28/2010US7859908 Iterative memory cell charging based on reference cell value
12/28/2010US7859907 Non-volatile semiconductor memory
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