Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
12/2010
12/28/2010US7859906 Circuit and method to increase read margin in non-volatile memories using a differential sensing circuit
12/28/2010US7859904 Three cycle memory programming
12/28/2010US7859903 Methods and structures for reading out non-volatile memory using NVM cells as a load element
12/28/2010US7859902 Three dimensional stacked nonvolatile semiconductor memory
12/28/2010US7859900 Built-in self-repair method for NAND flash memory and system thereof
12/28/2010US7859898 Nonvolatile semiconductor memory device including NAND-type flash memory and the like
12/28/2010US7859885 Phase changing memory device
12/28/2010US7859301 Power regulator circuitry for programmable logic device memory elements
12/28/2010US7859046 Ballistic direct injection NROM cell on strained silicon structures
12/23/2010WO2010146770A1 Non-volatile memory
12/23/2010WO2010145967A1 Memory device for managing the recovery of a non volatile memory
12/23/2010WO2010145356A1 Device and data storing and starting method thereof
12/23/2010WO2010115726A3 Analyzing monitor data information from memory devices having finite endurance and/or retention
12/23/2010US20100322015 Split Gate NAND Flash Memory Structure and Array, Method of Programming, Erasing and Reading Thereof, and Method of Manufacturing
12/23/2010US20100322014 Erasing method for nonvolatile memory
12/23/2010US20100322013 Nonvolatile Semiconductor Memory Device
12/23/2010US20100322012 Nonvolatile semiconductor memory device and write method for the same
12/23/2010US20100322011 Semiconductor memory device with memory cells having charge accumulation layer
12/23/2010US20100322010 Non-volatile memory programmable through areal capacitive coupling
12/23/2010US20100322009 Semiconductor memory device including charge accumulation layer
12/23/2010US20100322008 Nonvolatile semiconductor memory device
12/23/2010US20100322007 Flash memory device and method of reading data
12/23/2010US20100322006 Nand memory cell string having a stacked select gate structure and process for for forming same
12/23/2010US20100322005 Reduced programming pulse width for enhanced channel boosting in non-volatile storage
12/23/2010US20100322004 Semiconductor memory device and erase method in the same
12/23/2010US20100322003 Interleaved memory program and verify method, device and system
12/23/2010US20100322002 Eeprom device
12/23/2010US20100322001 Integrated circuit embedded with non-volatile programmable memory having variable coupling and separate read/write paths
12/23/2010US20100322000 Programming methods for three-dimensional memory devices having multi-bit programming, and three-dimensional memory devices programmed thereby
12/23/2010US20100321999 Nonvolatile memory device and related programming method
12/23/2010US20100321998 Nonvolatile memory device and related method of programming
12/23/2010US20100321997 Method And System For Obtaining A Reference Block For A MLC Flash Memory
12/23/2010US20100321996 Semiconductor device and method for adjusting reference levels of reference cells
12/23/2010US20100321995 Memory cell threshold voltage drift estimation methods and apparatus
12/23/2010US20100320524 Semiconductor integrated circuit device and a method of manufacturing the same
12/23/2010DE102010019487A1 Speichervorrichtung, Datenverarbeitungsvorrichtung und Verfahren Memory device, data processing apparatus and method
12/23/2010DE102010016666A1 Speicherzellenanordnungen Memory cell arrays
12/22/2010EP2264756A1 Semiconductor device
12/22/2010EP2264605A1 Flash controller cache architecture
12/22/2010EP2263154A2 Analog read and write paths in a solid state memory device
12/22/2010EP1851809B1 Snse-based limited reprogrammable cell
12/22/2010EP1812932B1 High speed programming system with reduced over programming
12/22/2010EP1305804B1 Synchronous flash memory with status burst output
12/22/2010CN1905071B Methods and circuits for programming flash memory devices using overlapping bit line setup and word line enable intervals
12/22/2010CN1692452B Semiconductor device and method of controlling the semiconductor device
12/22/2010CN101923901A Programming driving system and driving method for phase change memory
12/22/2010CN101923900A Erasing method and device for non-volatile memory
12/22/2010CN101923899A Method and device for erasing nonvolatile memory
12/22/2010CN101923898A HDCP_KEY burning method under insufficient Flash space of display
12/22/2010CN101923897A Semiconductor integrated circuit and testing method for the same
12/22/2010CN101923896A Electronic storage device and error correcting method thereof
12/22/2010CN101923895A Phase change memory device having multi-level and method of driving the same
12/22/2010CN101923894A Method for low power accessing a phase change memory device
12/22/2010CN101478029B EPIR effect resistor type non-volatile random memory material, preparation and use thereof
12/22/2010CN101393776B Method for prolonging life of multi-layered unit flash memory
12/22/2010CN101373636B Method for preventing memory array generating bit line interference
12/22/2010CN101207136B Non-volatile memory device and method of operating the same
12/21/2010US7855921 Erase method and soft programming method of non-volatile memory device
12/21/2010US7855920 Semiconductor memory device having a floating storage bulk region capable of holding/emitting excessive majority carriers
12/21/2010US7855919 Non-volatile memory and semiconductor device
12/21/2010US7855918 Method for programming a memory structure
12/21/2010US7855917 Semiconductor memory device and driving method thereof
12/21/2010US7855916 Nonvolatile memory systems with embedded fast read and write memories
12/21/2010US7855915 Nonvolatile semiconductor storage device capable of high-speed writing
12/21/2010US7855914 Semiconductor memory device capable of suppressing peak current
12/21/2010US7855913 Dynamically configurable MLC state assignment
12/16/2010WO2010144215A2 Voltage translator
12/16/2010WO2010143209A1 Suspension of memory operations for reduced read latency in memory arrays
12/16/2010WO2010117807A3 Two pass erase for non-volatile storage
12/16/2010US20100315884 Non-volatile memory utilizing impact ionization and tunnelling and method of manufacturing thereof
12/16/2010US20100315883 Nonvolatile memory device and method of operating the same
12/16/2010US20100315882 Nonvolatile memory device and method of programming the same
12/16/2010US20100315881 Non-volatile memory device and method of reading data in a non-volatile memory device
12/16/2010US20100315880 Method of operating nonvolatile memory device
12/16/2010US20100315879 Page buffer of nonvolatile memory device and method of performing program verification operation using the same
12/16/2010US20100315878 Semiconductor memory device including memory cell with charge accumulation layer
12/16/2010US20100315877 Data sensing module and sensing circuit for flash memory
12/16/2010US20100315876 Memory devices and operations thereof using program state determination based on data value distribution
12/16/2010US20100315875 Non-volatile memory device having vertical structure and method of operating the same
12/16/2010US20100315874 Use of emerging non-volatile memory elements with flash memory
12/16/2010US20100315873 Nonvolatile memory device and related programming method
12/16/2010US20100315872 Multilevel Cell Memory Devices Having Reference Point Cells
12/16/2010DE102009037984A1 Speichervorrichtung für eine Hierarchische Speicherarchitektur Memory device for a hierarchical memory architecture
12/15/2010EP2261928A2 A content addressable memory cell
12/15/2010EP1844474B1 Nonvolatile latch
12/15/2010EP1297530B1 Inductive charge pump circuit for providing voltages useful for flash memory and other applications
12/15/2010EP1262996B1 Semiconductor integrated circuit device
12/15/2010CN201673687U 闪存装置 Flash memory device
12/15/2010CN201673686U Recorder capable of simultaneously recording four EEPROMs
12/15/2010CN1624803B 半导体集成电路装置 The semiconductor integrated circuit device
12/15/2010CN101919004A Read, verify word line reference voltage to track source level
12/15/2010CN101919002A Data storage and stackable configurations
12/15/2010CN101916592A Burning-free method for liquid crystal display television HDMI EDID
12/15/2010CN101916591A 半导体集成电路器件 The semiconductor integrated circuit device
12/15/2010CN101916590A Data reading method and circuit of phase change memory
12/15/2010CN101916589A Nonvolatile storage equipment and control method thereof
12/15/2010CN101916588A In-system-programming (ISP) module and method thereof for in-system-programming of FPAA
12/15/2010CN101916583A Sense amplifier and memory
12/15/2010CN101350221B Method for preventing non-volatility memory array from generating bit line interference
12/15/2010CN101345289B Semiconductor device
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