Patents
Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
07/2007
07/12/2007US20070161237 Nanoscopic wired-based devices and arrays
07/12/2007US20070159871 Semiconductor device with a non-erasable memory and/or a nonvolatile memory
07/12/2007US20070159867 Memory device, memory circuit and semiconductor integrated circuit having variable resistance
07/12/2007US20070158766 for forming conductive interconnect layers useful in articles such as semiconductor chips, memory devices, semiconductor dies, circuit modules, and electronic systems
07/12/2007US20070158716 Conductive memory stack with sidewall
07/12/2007US20070158634 Non-volatile semiconductor memory device allowing shrinking of memory cell
07/11/2007EP1805767A1 Nanoscale latches and impedance-encoded logic for use in nanoscale state machines, nanoscale pipelines, and in other nanoscale electronic circuits
07/11/2007EP1683157B1 Phase change memory element with improved cyclability
07/11/2007CN1998082A Polymer dielectrics for memory element array interconnect
07/11/2007CN1996609A Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same
07/11/2007CN1996495A Bit unit of organic memory
07/11/2007CN1996494A 有机存储器 Organic Memory
07/11/2007CN1996491A Nonvolatile carbon nanotube memory device using multiwall carbon nanotubes and methods of operating and fabricating the same
07/11/2007CN1326137C Phase change material capable of being used for phase transformation memory multi-stage storage
07/11/2007CN1326124C Apparatus and method for reading information from photonics diffractive memory
07/10/2007US7242605 Phase-change memory device and method that maintains the resistance of a phase-change material in a reset state within a constant resistance range
07/10/2007US7242603 Method of operating a complementary bit resistance memory sensor
07/10/2007US7242601 Deterministic addressing of nanoscale devices assembled at sublithographic pitches
07/10/2007US7241419 Circuits for the control of output current in an electronic device for performing active biological operations
07/05/2007WO2007074504A1 Nonvolatile semiconductor storage device and method for writing threrin
07/05/2007WO2007059273A3 High density, high bandwidth multilevel holographic memory
07/05/2007US20070153565 Semiconductor device and driving method of the same
07/05/2007US20070153562 Bit cell of organic memory
07/04/2007EP1671165A4 A method of optical data storage
07/04/2007CN1992369A Semiconductor device and manufacturing method thereof
07/03/2007US7239769 Nanowire optoelectric switching device and method
07/03/2007US7238964 Memory cell, method for the production thereof and use of a composition therefor
06/2007
06/28/2007WO2007072628A1 Electric element, memory device and semiconductor integrated circuit
06/28/2007DE102005061995A1 Memory circuit, has discharge circuit formed to make possible discharge current in or from bit circuit to aid recharging of bit circuit, where recharging of bit circuit is caused by changing resistance of resistance memory unit
06/27/2007EP1800298A1 Holographic system, in particular for holographic data storage
06/27/2007EP1397809B1 A memory device with a self-assembled polymer film and method of making the same
06/27/2007CN1989571A Information carrier, system and apparatus for reading such an information carrier
06/26/2007US7236394 Transistor-free random access memory
06/26/2007US7236390 Bit cell of organic memory
06/21/2007WO2007069405A1 Non-volatile semiconductor memory device
06/21/2007WO2007008903A3 Memory cell comprising a thin film three-terminal switching device having a metal source and/or drain region
06/21/2007WO2005122235A3 Methods and devices for forming nanostructure monolayers and devices including such monolayers
06/21/2007US20070141746 Methods of nanotube films and articles
06/21/2007DE102004020297B4 Verfahren zur Herstellung resistiv schaltender Speicherbauelemente A process for producing resistive switching memory devices
06/20/2007EP1798732A1 Ferroelectric passive memory cell, device and method of manufacture thereof.
06/20/2007EP1797584A2 Methods and devices for forming nanostructure monolayers and devices including such monolayers
06/20/2007EP1733398A4 Circuit for accessing a chalcogenide memory array
06/20/2007CN1985331A A composition of matter which results in electronic switching through intra- or inter- molecular charge transfer between molecules and electrodes induced by electricity
06/20/2007CN1984775A Method for preparing redox-active polymers on surfaces
06/20/2007CN1983619A 数据读/写装置 Data read / write device
06/20/2007CN1983447A Method for processing a MEMS/CMOS cantilever based memory storage device
06/20/2007CN1983404A 全息图记录方法和全息图记录装置 A hologram recording method and the hologram recording device
06/14/2007WO2007066133A1 Memory cell
06/14/2007US20070133250 Phase change memory including diode access device
06/13/2007EP1796172A2 Nano-wire capacitor and circuit device therewith
06/13/2007EP1796103A2 Unpolar resistance random access memory (pram) device and vertically stacked architecture
06/13/2007EP1500110B1 Molecular wire crossbar flash memory
06/13/2007EP1428173A4 Optical memory system for information retrieval from fluorescent multilayer optical clear card of the rom-type
06/13/2007CN1321337C Method of forming split phase area inside glass
06/12/2007US7230747 Hologram retention method
06/12/2007US7230268 Attachment of organic molecules to group III, IV or V substrates
06/07/2007WO2007064540A2 Molecular quantum memory
06/07/2007WO2007064006A1 Image information producing apparatus and image information producing method
06/07/2007WO2007063655A1 Program circuit, semiconductor integrated circuit, voltage application method, current application method, and comparison method
06/07/2007US20070127280 Deterministic addressing of nanoscale devices assembled at sublithographic pitches
06/06/2007EP1793386A2 A memory array and a display apparatus using mechanical switch, method for controlling the same
06/06/2007EP1792149A2 Random access memory including nanotube switching elements
06/06/2007EP1410429A4 Electromechanical memory array using nanotube ribbons and method for making same
06/06/2007DE10340610B4 Verbindung mit mindestens einer Speichereinheit aus organischem Speichermaterial, insbesondere zur Verwendung in CMOS-Strukturen, Halbleiterbauelement und ein Verfahren zur Herstellung eines Halbleiterbauelementes Compound having at least a memory unit of organic memory material, in particular for use in CMOS structures, semiconductor device and a method of manufacturing a semiconductor device
06/06/2007CN1977337A 非易失性可编程存储器 Non-volatile programmable memory
06/06/2007CN1976082A CuxO-based resistance random access memory and producing method thereof
06/06/2007CN1975929A A memory array and a display apparatus using mechanical switch, method for controlling the same
06/05/2007US7227767 Cross point memory array with fast access time
06/05/2007US7227178 Switching element
05/2007
05/31/2007WO2007059996A1 Nanostructured device
05/31/2007US20070121364 One-time programmable, non-volatile field effect devices and methods of making same
05/31/2007US20070121185 Holographic recording method, holographic memory reproduction method, holographic recording apparatus, and holographic memory reproduction apparatus
05/31/2007US20070121184 Holographic storage device
05/30/2007EP1410552A4 Hybrid circuit having nanotube electromechanical memory
05/30/2007CN1973324A Phase-conjugate read-out in a holographic data storage
05/29/2007US7224632 Rewrite prevention in a variable resistance memory
05/29/2007US7224599 Semiconductor device
05/29/2007US7223628 High temperature attachment of organic molecules to substrates
05/29/2007US7223613 Ferroelectric polymer memory with a thick interface layer
05/24/2007WO2007059273A2 High density, high bandwidth multilevel holographic memory
05/24/2007US20070116635 Method of transforming carbon nanotubes
05/24/2007US20070115789 Holographic scanning device
05/24/2007US20070115714 Method for initializing resistance-variable material, memory device containing a resistance-variable material, and method for initializing nonvolatile memory circuit including variable resistor
05/24/2007US20070115027 Nanotube-based logic driver circuits
05/24/2007US20070114587 Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same
05/24/2007CA2629649A1 High density, high bandwidth multilevel holographic memory
05/23/2007EP1459334A4 Electromechanical three-trace junction devices
05/23/2007CN1967896A Thermally contained/insulated phase change memory device and method (combined)
05/23/2007CN1967861A Electrically rewritable non-volatile memory element
05/23/2007CN1317768C Nonvolatile memory device utilizing a vertical nanotube
05/23/2007CN1317765C Stucture of resistance type random access memory and its producing method
05/22/2007US7221579 Method and structure for high performance phase change memory
05/22/2007US7220979 Optical memory plate or panel
05/22/2007CA2312841C Programmable sub-surface aggregating metallization structure and method of making same
05/17/2007US20070109858 Novel Method and Structure for Efficient Data Verification Operation for Non-Volatile Memories
05/17/2007US20070108482 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
05/16/2007EP0853497B1 Matrices with memories and uses thereof
05/16/2007CN1965418A Layered resistance variable memory device and method of fabrication
05/16/2007CN1316563C High temperature annealing of spin coated Pr(1-x)ca(x)Mno3 thin film for RRAM application
05/15/2007US7217404 Method of transforming carbon nanotubes
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