Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or
Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
11/2007
11/27/2007US7299535 Methods for making data storage media and the resultant media
11/22/2007WO2007132525A1 Nonvolatile semiconductor memory device, and its writing method
11/22/2007US20070268808 Cantilever including a fulcrum to actuate a probe tip for use in systems and methods of probe data storage
11/21/2007CN101075630A Phase change memory device and manufacturing method
11/21/2007CN100350614C Electrodes for RRAM memory cells
11/20/2007US7298645 Nano tube cell, and semiconductor device having nano tube cell and double bit line sensing structure
11/20/2007US7298640 1T1R resistive memory array with chained structure
11/20/2007US7298016 Electromechanical memory array using nanotube ribbons and method for making same
11/15/2007WO2007089802A3 Tunneling-resistor-junction-based microscale/nanoscale demultiplexer arrays
11/14/2007CN101073125A Semiconductor device and its manufacturing method
11/14/2007CN101071843A Resistor storage device unit structure and its preparing method
11/14/2007CN100349178C Micro flow controlling chip DNA molecular memory
11/13/2007US7295503 Data storage device including nanotube electron sources
11/13/2007US7295461 Memory device with a self-assembled polymer film and method of making the same
11/13/2007US7295455 Semiconductor integrated circuit with photo-detecting elements for reverse-engineering protection
11/13/2007US7294877 Nanotube-on-gate FET structures and applications
11/13/2007US7294875 Nanoscale programmable structures and methods of forming and using same
11/13/2007US7294454 Waveguide fabrication methods and devices
11/13/2007CA2353496C Scalable data processing apparatus
11/08/2007WO2007126678A1 Nonvolatile rewriteable memory cell comprising a resistivity- switching oxide or nitride and an antifuse
11/08/2007US20070258308 Software refreshed memory device and method
11/08/2007US20070258279 Thin film phase-change memory
11/08/2007DE102005061995B4 Speicherschaltung mit einem Widerstandselement und Verfahren zum Betreiben einer solchen Speicherschaltung A memory circuit comprising a resistor element and method of operating such a memory circuit
11/07/2007EP1665278A4 Nanotube-based switching elements with multiple controls and circuits made from same
11/07/2007EP1609188A4 Nanotube-on-gate fet structures and applications
11/06/2007US7293281 Method and system for verifying a client request
11/06/2007US7292382 Light control unit
11/06/2007US7291878 Ultra low-cost solid-state memory
11/06/2007US7291514 Bottom electrode chemically-bonded Langmuir-Blodgett films via photolabile groups
11/01/2007US20070252136 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
11/01/2007US20070252126 Driver and Drive Method for Organic Bistable Electrical Device and Organic Led Display
10/2007
10/31/2007CN101064359A Non-volatile memory devices including variable resistance material
10/31/2007CN100346402C Speckle multiplexing with improved tracking
10/30/2007US7289357 Isolation structure for deflectable nanotube elements
10/30/2007US7288781 Programmable structure, an array including the structure, and methods of forming the same
10/25/2007US20070248957 Encoded solid supports for biological processing and assays using same
10/24/2007EP1847999A2 Circuit and a method of determining the resistive state of a resistive memory cell
10/24/2007EP1846954A2 Structure and method for biasing phase change memory array for reliable writing
10/24/2007EP1846952A1 Semiconductor device and manufacturing method of the same
10/24/2007EP1282464A4 High-density non-volatile memory devices incorporating thiol-derivatized porphyrin trimers
10/24/2007CN101060012A Circuit and a method of determining the resistive state of a resistive memory cell
10/24/2007CN100345300C Common bit/common source line high density 1T1RR-RAM array and operation method
10/23/2007US7286401 Nonvolatile semiconductor memory device
10/23/2007US7286388 Resistive memory device with improved data retention
10/23/2007US7286378 Serial transistor-cell array architecture
10/18/2007WO2007115719A1 Holographic storage material
10/18/2007WO2007050270A3 System and method for processing an organic memory cell
10/18/2007WO2005053002A3 Two-component, rectifying-junction memory element
10/18/2007US20070242500 Method and apparatus providing high density data storage
10/17/2007CN101055917A Resistive memory element, operating method thereof, and data processing system using the memory element
10/16/2007US7283372 Circuit element having a first layer of an electrically insulating substrate material and method for manufacturing a circuit element
10/16/2007US7282731 Quantum supermemory
10/16/2007US7282322 Sensitivity, no inhibition time, and low shrinkage; long-term storage and archival life stabilities under high temperature and humidity conditions; holographic optical data storage, optical lenses, beam steerers, and waveguides
10/11/2007US20070237781 Biologically active metal-containing nucleic acids
10/11/2007US20070235826 Devices having horizontally-disposed nanofabric articles and methods of making the same
10/11/2007DE102006032538A1 Speichermedium mit einem Sicherheitsmerkmal sowie Verfahren zur Herstellung eines Speichermediums mit einem Sicherheitsmerkmal Storage medium with a security feature as well as method of producing a storage medium with a security feature
10/10/2007EP1843223A1 Hologram recording device
10/10/2007CN100342453C Ferroelectric memory circuit and method for its fabrication
10/09/2007US7280394 Field effect devices having a drain controlled via a nanotube switching element
10/09/2007US7280393 MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same
10/09/2007US7279760 Nanotube relay device
10/04/2007US20070230235 Semiconductor Device
10/04/2007US20070230231 Memory system
10/04/2007DE19964445B4 Vorrichtung und Verfahren zum Auslesen von in einer Speicherschicht abgespeicherten Informationen Apparatus and method for reading out information stored in an information storage layer
10/03/2007CN101048886A Printable organic non-volatile passive memory element and method of making thereof
10/03/2007CN101048885A Printable organic non-volatile passive memory element and method of making thereof
10/03/2007CN101048881A Semiconductor device with tunable energy band gap
10/03/2007CN101048869A 半导体器件 Semiconductor devices
10/03/2007CN101048824A Nanoscale latches and impedance-encoded logic for use in nanoscale state machines, nanoscale pipelines, and in other nanoscale electronic circuits
10/03/2007CN101048818A Optical device for scanning an information carrier
10/02/2007US7277314 Mobile ion memory
10/02/2007US7276722 Non-volatile memory structure
09/2007
09/27/2007DE102005035445B4 Nichtflüchtige, resistive Speicherzelle auf der Basis von Metalloxid-Nanopartikeln sowie Verfahren zu deren Herstellung und entsprechende Speicherzellenanordnung A non-volatile, resistive memory cell on the basis of metal oxide nanoparticles and methods for their preparation and corresponding memory cell array
09/26/2007CN101044624A 半导体器件 Semiconductor devices
09/26/2007CN101043067A Method for fabricating a pillar-shaped phase change memory element
09/26/2007CN101042935A Memory cell, memory with a memory cell and method for writing data in a memory cell
09/26/2007CN101042934A Memory device and method for operating such a memory device
09/26/2007CN101042933A Non-volatilization SRAM with metallic oxide as storage medium and uses thereof
09/26/2007CN100340010C Memory cell with an asymmetrical area
09/25/2007US7274586 Method for programming phase-change memory array to set state and circuit of a phase-change memory device
09/25/2007US7274208 Nanoscale wire-based sublithographic programmable logic arrays
09/25/2007US7274078 Devices having vertically-disposed nanofabric articles and methods of making the same
09/25/2007US7274064 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
09/25/2007US7274035 Memory devices based on electric field programmable films
09/20/2007WO2007089914A3 Fpga architecture at conventional and submicron scales
09/20/2007US20070217254 Semiconductor Memory
09/20/2007DE102006011688A1 Memory cell e.g. dynamic RAM cell, has control switch comprising delimitation unit to limit current flowing through solid electrolyte layer to given amount of electrical charge for writing process
09/20/2007DE102006011462A1 Memory circuit, has field effect transistor connected with resistance storage unit to apply predetermined potential to node between selection transistor and resistance storage unit, which is connected with bit line
09/19/2007EP1434232B1 Memory cell
09/19/2007CN101040329A Holographic system, in particular for holographic data storage
09/19/2007CN100338682C Non-volatile memory and semi-conductor integrated circuit device
09/19/2007CN100338665C Method and apparatus for the holographic recording and readout of data
09/18/2007US7272511 Functionalizing carbon nanotubes so that they are suitable for making contacts with DNA strands;contacting nanoelectrodes to first ends of the DNA strands, and nanotubes to the other end of the DNA strands through benzyne rings
09/18/2007US7271434 Capacitor with insulating nanostructure
09/18/2007US7270866 Piracy-resistant data leasing system and method
09/18/2007CA2359100C Molecular computer
09/13/2007WO2007102483A1 Nonvolatile storage element, nonvolatile storage device and method for manufacturing such element and device
09/13/2007US20070212897 High-temperature attachment of organic molecules to substrates
09/13/2007DE102006010531A1 Memory device e.g. phase change memory device, has memory cells with switching devices connected with current unloading connections for switching currents from current supply line through active material
09/13/2007DE102005063405A1 Speicherelement, Speicherausleseelement und Speicherzelle Storage element, memory read and memory cell element
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