| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
|---|
| 04/16/1996 | US5508071 CVD diamond coating annulus components and method of their fabrication |
| 04/16/1996 | US5507987 Method of making a free-standing diamond film with reduced bowing |
| 04/16/1996 | CA2040070C Method of preparing oxide superconducting film |
| 04/10/1996 | EP0705917A1 Method for making high thermal conducting diamond |
| 04/10/1996 | EP0705916A1 Diamond film structure with high thermal conductivity |
| 04/10/1996 | EP0496897B1 Method for manufacturing high temperature superconductive oxide thin film |
| 04/09/1996 | US5506422 MOIS junction for use in a diamond electronic device |
| 04/09/1996 | US5505159 Growing intermetallic from reacting a group 3 halide with a group 5 hydride; exciting stretching vibration of hydride in beam, aligning orientation of molecules |
| 04/09/1996 | US5505157 Low hydrogen-content silicon crystal with few micro-defects caused from annealing, and its manufacturing methods |
| 04/03/1996 | EP0704887A2 A method and device for controlling tensile and compressive stresses and mechanical problems in thin films on substrates |
| 04/03/1996 | EP0704884A2 Highly selective silicon oxide etching method |
| 04/03/1996 | EP0704559A1 Method for the preparation of a substrate material for solar cells and a solar cell prepared by using the same |
| 04/02/1996 | CA2057274C Article comprising a metal body with a layer of superconductor material thereon, and method of making the article |
| 04/02/1996 | CA1338202C Chemical vapor deposition of oxide films containing alkaline earth metals from metal-organic sources |
| 03/27/1996 | EP0703199A2 High-strength, high-toughness silicon nitride sinter and method for production thereof |
| 03/20/1996 | EP0702259A1 Material for wide-band optical isolators and process for producing the same |
| 03/20/1996 | EP0702100A1 Apparatus and method for manufacturing single-crystal material |
| 03/19/1996 | US5500390 Method for control of Si concentration in gallium phosphide single crystal layer by liquid phase epitaxial growth technique |
| 03/19/1996 | US5500157 Hot templates of polycrystalline diamonds |
| 03/19/1996 | US5500145 Hydrothermal aqueous mineralizer for growing optical-quality single crystals |
| 03/19/1996 | US5499598 Method for producing a silicon rod |
| 03/14/1996 | WO1996007661A1 Formation of a metalorganic compound for growing epitaxial semiconductor layers |
| 03/14/1996 | WO1996007660A1 Metalorganic compounds |
| 03/13/1996 | EP0701009A2 Surface treatment of an oxide LnBa2Cu3O7-x single crystal |
| 03/13/1996 | EP0701008A2 Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth |
| 03/13/1996 | EP0701006A1 Diamond-coated composite cutting tool and method of making |
| 03/13/1996 | EP0495817B1 A method for growing enzyme crystals |
| 03/12/1996 | US5498298 Cobalt and copper alloy |
| 03/06/1996 | EP0699783A2 A method of liquid phase epitaxial growth and apparatus therefor |
| 03/05/1996 | US5497029 Multilayer indium antimonate substrate with tin indium antimonide, second conductive layer and protective film |
| 02/29/1996 | WO1996006206A1 Method for the deposition of diamond film on the electroless-plated nickel layer |
| 02/29/1996 | WO1996005942A1 Abrasive article having a diamond-like coating layer and method |
| 02/29/1996 | CA2196674A1 Abrasive article having a diamond-like coating layer and method |
| 02/28/1996 | EP0698296A1 Preparation of nucleated silicon surfaces |
| 02/28/1996 | CN1117532A Method for growth of single-crystal of salt mercuric rhodanate |
| 02/27/1996 | US5494850 Molecular beam epitaxy to grow aluminum and neodymium and erbium doped calcium fluoride on silicon substrate; annealing in reduced atmosphere of hydrogen and nitrogen at specific temperature and time |
| 02/27/1996 | US5493984 Terbium aluminate and method for its production |
| 02/22/1996 | WO1996005337A1 Formation of diamond materials by rapid-heating and rapid-quenching of carbon-containing materials |
| 02/22/1996 | WO1996005334A1 Metal polyoxyalkylated precursor solutions in an octane solvent and method of making the same |
| 02/22/1996 | CA2197775A1 Metal polyoxyalkylated precursor solutions in an octane solvent and method of making the same |
| 02/22/1996 | CA2197067A1 Formation of diamond materials by rapid-heating and rapid-quenching of carbon-containing materials |
| 02/21/1996 | EP0617741B1 Nucleation enhancement for chemical vapor deposition of diamond |
| 02/14/1996 | EP0696652A2 Process and apparatus for measuring, controlling and/or regulating oxygen concentration in silicon melt |
| 02/14/1996 | CN1030982C Method for producing crystalline barium oxide by arc process |
| 02/13/1996 | US5491002 Multilayer CVD diamond films |
| 02/13/1996 | US5490477 Process for the production of semiconductor foils and their use |
| 02/08/1996 | DE4427715C1 Komposit-Struktur mit auf einer Diamantschicht und/oder einer diamantähnlichen Schicht angeordneter Halbleiterschicht sowie ein Verfahren zu deren Herstellung Composite structure having disposed on a diamond layer and / or a diamond-like layer semiconductor layer and a method for their preparation |
| 02/07/1996 | EP0695816A1 Method of making synthetic diamond film with reduced bowing |
| 02/06/1996 | US5489346 Useful in casting gas turbine blades or vanes |
| 02/06/1996 | US5488923 Method for producing single crystal |
| 02/01/1996 | WO1996002685A1 Diamond-phase carbon tubes and cvd process for their production |
| 01/30/1996 | US5487358 Apparatus for growing silicon epitaxial layer |
| 01/30/1996 | US5487354 Method for pulling a silicon single crystal |
| 01/30/1996 | US5487353 Conversion of doped polycrystalline material to single crystal |
| 01/25/1996 | WO1996001687A1 Zeolite layers with controlled crystal width and preferred orientation grown on a growth enhancing layer |
| 01/25/1996 | WO1996001685A1 An in-situ crystallized zeolite containing composition (lai-isc) |
| 01/25/1996 | CA2193258A1 An in-situ crystallized zeolite containing composition (lai-isc) |
| 01/24/1996 | EP0693581A1 A caesium-lithium-borate crystal and its application to frequency conversion of laser light |
| 01/24/1996 | EP0693575A1 Method for forming diamond film |
| 01/24/1996 | EP0693573A1 Synthesizing diamond film |
| 01/23/1996 | US5486263 Etching a diamond body with a molten or partially molten metal |
| 01/18/1996 | WO1996001502A1 Epitaxial thallium high temperature superconducting films formed via a nucleation layer |
| 01/18/1996 | CA2194400A1 Epitaxial thallium high temperature superconducting films formed via a nucleation layer |
| 01/17/1996 | EP0692690A1 Apparatus for annealing diamond water jet mixing tubes |
| 01/17/1996 | EP0692037A1 DEVICE AND PROCESS FOR PRODUCING SiC SINGLE CRYSTALS |
| 01/11/1996 | WO1996000806A1 Polishing diamond surface |
| 01/09/1996 | US5483084 Diamond covered member and process for producing the same |
| 01/09/1996 | US5483038 Method of working diamond with ultraviolet light |
| 01/09/1996 | US5482789 Nickel base superalloy and article |
| 01/09/1996 | US5482748 Bbowl shape substrate coated with microwave plasma |
| 01/09/1996 | US5482001 Process for producing lithium niobate single crystal |
| 01/06/1996 | CA2153184A1 Method of making synthetic diamond film with reduced bowing |
| 01/04/1996 | WO1996000464A1 SURFACE SKIMMING BULK WAVE GENERATION IN KTiOPO4 AND ITS ANALOGS |
| 01/03/1996 | EP0690153A1 Oxide garnet single crystal |
| 01/03/1996 | EP0690152A2 Process and apparatus for the production of films of oxide type single crystal |
| 01/03/1996 | CN1114502A Composite metal oxide powder and process for producing the same |
| 01/03/1996 | CN1114368A Amorphous in-situ synthesized nm silicon nitride crystal whisker |
| 01/02/1996 | US5481081 Method and apparatus of synthesizing diamond in vapor phaase |
| 01/02/1996 | US5480861 Layered structure comprising insulator thin film and oxide superconductor thin film |
| 01/02/1996 | US5480686 Process and apparatus for chemical vapor deposition of diamond films using water-based plasma discharges |
| 01/02/1996 | US5480569 Doped crystalline titanyl arsenates and preparation thereof |
| 01/02/1996 | US5479875 Microwave plasma vapor deposition, nucleation |
| 01/02/1996 | CA1337855C Processes for the preparation of polycrystalline diamond films |
| 12/27/1995 | CN1113970A Descent method for growing large size cesium iodide (CSI) crystal |
| 12/26/1995 | US5479290 Magnetic crystal is mixed oxide of terbium and other rare earth metals, one selected from calcium, magnesium, stronsium, atleast one metal from aluminum, gallium, titanium, silicon germenium; used for wavelength division-multiplex transmission |
| 12/26/1995 | US5478513 CVD diamond growth on hydride-forming metal substrates |
| 12/26/1995 | US5478398 Device for forming a compound oxide superconductor thin film |
| 12/26/1995 | US5478396 Production of high-purity polycrystalline silicon rod for semiconductor applications |
| 12/26/1995 | US5477808 Process for reducing the oxygen incorporation into a single crystal of silicon |
| 12/26/1995 | US5477807 Depositing cathode and anode via a semi-dielectric substance layer on c-plane of singl crystal of potassium niobate, applying voltage so as to pole(convert to single domain state) |
| 12/26/1995 | US5477806 Method of producing silison single crystal |
| 12/21/1995 | WO1995034698A1 Photo-assigned nitrogen doping of ii-vi semiconductor compounds during epitaxial growth using an amine |
| 12/20/1995 | EP0688026A1 Resistor coated on diamond substrate |
| 12/20/1995 | EP0687753A1 A synthesis process of diamond, synthesis apparatus and synthetic diamond |
| 12/20/1995 | EP0687752A1 Method for control of Si concentration in gallium phosphide single crystal layer |
| 12/20/1995 | CN1113523A Conversion of doped polycrystalline material to single crystal material |
| 12/19/1995 | US5476679 Method for making a graphite component covered with a layer of glassy carbon |
| 12/19/1995 | US5476065 System for pulling-up monocrystal and method of exhausting silicon oxide |
| 12/14/1995 | WO1995033864A1 Carbon-coated barrier films whith increased concentration |
| 12/13/1995 | EP0686163A1 Metal-interferon-alpha crystals |