C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method

Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
12/2011
12/15/2011	WO2011156648A1 Method for producing films
12/15/2011	WO2011106411A3 Insulation apparatus
12/15/2011	DE102010023590A1 Preparation of silicon-containing compound for manufacture of photovoltaic cell, involves grinding silicon raw material containing silica, ferric oxide, phosphorus pentoxide, alumina and boron trioxide in presence of grinding media
12/15/2011	DE102010023101A1 Verfahren zur Herstellung von Halbleiterscheiben aus Silizium A process for producing semiconductor wafers from silicon
12/15/2011	DE102010023100A1 Device useful for pulling a single crystal made of semiconductor material, comprises a pot-like element, which shields the growing crystal from thermal radiation, and the cross-section of the pot-like element is reduced by a hole
12/14/2011	EP2395132A1 Method and apparatus for manufacturing silicon substrate with excellent productivity and surface quality using continuous casting
12/14/2011	CN202074843U 单晶炉热量回收采暖系统 Crystal furnace heat recovery heating system
12/14/2011	CN202072807U 一种单晶炉测径仪的安装结构 Mounting structure of a single crystal furnace caliper
12/14/2011	CN202072805U 一种单晶炉 Single crystal furnace
12/14/2011	CN202072796U 一种单晶炉用涂层热屏 Single crystal furnace heat shield coating
12/14/2011	CN202072795U 防止断电时坩埚杆下滑的坩埚杆运行装置 Prevent running gear lever crucible crucible when power pole decline
12/14/2011	CN202072794U 全数字节能型太阳能用单晶生长电源及控制装置 Digital single-crystal growth with energy-saving solar power and control devices
12/14/2011	CN102277619A 磷酸氧钛钾的生长设备 Growth of potassium titanyl phosphate equipment
12/14/2011	CN102277616A 生产包括硅的半导体晶圆的方法 The production method comprises a semiconductor wafer of silicon
12/14/2011	CN102277615A 一种均匀熔体浓度的坩埚 The concentration of a homogeneous melt crucible
12/08/2011	WO2011151757A1 Producing a mono-crystalline sheet
12/08/2011	DE102007027111B4 Siliciumscheibe mit guter intrinsischer Getterfähigkeit und Verfahren zu ihrer Herstellung Silicon wafer with good intrinsic gettering capability and methods for their preparation
12/07/2011	CN202064037U 一种单晶炉导流筒的提升装置 Lifting device for single crystal furnace draft tube
12/07/2011	CN202064032U 碳/碳复合材料坩埚 Carbon / carbon composite material crucible
12/07/2011	CN202064031U 一种单晶炉的二次投料装置 Single crystal furnace secondary feeding device
12/07/2011	CN202064030U 一种单晶炉 Single crystal furnace
12/07/2011	CN102272361A 单晶锗晶体生长的系统、方法和衬底 Single crystal germanium crystal growth system, the method and the substrate
12/07/2011	CN102272360A 制备用于硅晶体生长的硅粉熔体的方法 Method for preparing a silicon melt in crystal growth of silicon powder
12/07/2011	CN102272075A 一种浸透坩锅及耐火物品的方法 One kind of crucible and refractory materials soak method
12/07/2011	CN102268734A 一种镨铈掺杂焦硅酸镥发光材料及其制备方法 An lutetium disilicate luminescent material and method for cerium, praseodymium-doped
12/07/2011	CN102268732A 单晶及其制造方法 Single crystal and manufacturing method thereof
12/07/2011	CN102268727A 直拉式单晶炉用坩埚驱动装置 Czochralski single crystal furnace crucible drive
12/07/2011	CN102268726A 一种cz直拉法太阳能单晶生长工艺 One kind of solar cz Czochralski crystal growth process
12/07/2011	CN102268725A 单晶生长炉隔离阀腔体 Crystal growth furnace chamber isolation valve
12/07/2011	CN101851784B 化合物硼酸锂铯非线性光学晶体及其制备方法和用途 Compound cesium lithium borate nonlinear optical crystal and its preparation method and use
12/01/2011	WO2011147860A1 Quartz glass crucible and method for producing same
12/01/2011	US20110290173 Methods and Systems for Characterization and Production of High Purity Polysilicon
12/01/2011	DE19806045B4 Verfahren zum Herstellen von einkristallinen Siliziumstäben unter Steuern desZiehgeschwindigkeitsverlaufs in einem Heißzonenofen A method of producing single crystal silicon rods Controlling desZiehgeschwindigkeitsverlaufs in a hot zone furnace
12/01/2011	DE102010022069A1 Verfahren zur Züchtung von II-VI-Halbleiterkristallen und II-VI-Halbleiterschichten A process for the production of II-VI semiconductor crystals and II-VI semiconductor layers
12/01/2011	DE102010021694A1 Quarzglastiegel und Verfahren für dessen Herstellung Quartz glass crucible and method for its preparation
12/01/2011	DE102008013325B4 Halbleiterscheibe aus einkristallinem Silicium und Verfahren zu deren Herstellung Semiconductor wafer made of monocrystalline silicon, and process for their preparation
12/01/2011	DE102006032431B4 Verfahren und Vorrichtung zur Detektion von mechanischen Defekten in einem aus Halbleitermaterial bestehenden Stabstück Method and apparatus for detection of mechanical failures in an existing piece of semiconductor material rod
11/2011
11/30/2011	CN202054930U 硅单晶炉炉盖观察窗 Monocrystalline silicon furnace lid viewing window
11/30/2011	CN202054928U 一种多晶硅铸锭炉安全监控装置 One kind of polycrystalline silicon ingot furnace safety monitoring device
11/30/2011	CN202054922U 单晶炉加料装置 Crystal furnace charging device
11/30/2011	CN202054921U 硅单晶炉翻板阀室观察窗 Monocrystalline silicon furnace flap valve chamber observation window
11/30/2011	CN102264956A 用于固化非金属熔融物的方法 Solidified melt process for non-metallic
11/30/2011	CN102260914A 一种大尺寸lgs晶体的生长方法 A method of growing large crystals lgs
11/30/2011	CN102260910A 一种用于提拉法生长lgs晶体的原料合成方法 A Czochralski crystal growth lgs synthesized method for
11/30/2011	CN102260904A 直拉式单晶炉的可调托晶盘装置 Adjustable tray crystal disk device Czochralski single crystal furnace
11/30/2011	CN102260903A 一种生长薄板硅晶体的方法 A method for the growth of the silicon crystal thin
11/30/2011	CN102260902A 石英坩埚涂层的制备方法 Manufacturing a silica crucible coatings
11/30/2011	CN102260901A 含涂层的SiC复合坩埚及制备法 SiC composite coatings containing crucible and Preparation
11/30/2011	CN102260900A 提高单晶硅纵向电阻率一致性的装置及其处理工艺 Improve the consistency of single-crystal silicon longitudinal resistivity device and treatment process
11/30/2011	CN101560696B 一种掺钬、铬、铒、铥钇铝石榴石激光晶体及其制备方法 Holmium-doped, chromium, erbium, thulium and yttrium aluminum garnet laser crystal and preparation method
11/30/2011	CN101006206B 硅片及其制造方法，以及硅单晶的培育方法 Wafer manufacturing method thereof, and silicon single crystal cultivation method
11/24/2011	US20110286906 Flowable Chips and Methods for the Preparation and Use of Same, and Apparatus for Use in the Methods
11/23/2011	EP1735843B1 Method for making polysilicon films
11/23/2011	CN202047173U Doping device applicable to light-dope and medium-and-high-resistance czochralski silicon monocrystal
11/23/2011	CN202047169U Seed crystal for monocrystalline silicon growth
11/23/2011	CN202047168U Seed holder for monocrystalline silicon growth
11/23/2011	CN202047167U Device capable of reducing shaking of monocrystalline silicon in drawing process
11/23/2011	CN102251281A Process for Producing Zno Single Crystal According to Method of Liquid Phase Growth ?
11/23/2011	CN102251276A Seed crystal for reducing necking length of solar grade direct-pull single crystal silicon
11/23/2011	CN102251275A Single-crystal furnace thermal field device capable of measuring distance between fused silicon liquid surface and guide cylinder
11/23/2011	CN102251274A Treatment method of obstruction of air-extraction hole of single-crystal furnace
11/17/2011	WO2011142076A1 Apparatus and method for manufacturing single crystal
11/16/2011	CN202041084U Carbon/carbon composite material thermal insulation cylinder
11/16/2011	CN202039156U Rope pulley synchronizer of single crystal furnace
11/16/2011	CN202039155U Graphite crucible
11/16/2011	CN202039154U Leak-proof graphite device for czochralski crystal growing furnace
11/16/2011	CN202039153U Thermal system used for manufacture of heavily doped silicon single crystal
11/16/2011	CN202039152U Single crystal growing furnace with pressing wheel mechanism
11/16/2011	CN202039151U Single crystal growing furnace with damping sleeve
11/16/2011	CN102245813A Improved axial gradient transport (AGT) growth process and apparatus utilizing resistive heating
11/16/2011	CN102242399A Annealing method of yttrium vanadate crystal
11/16/2011	CN102242397A Process for producing Czochralski silicon single crystal
11/16/2011	CN102242396A Automatic protection method for lifting operation of auxiliary chamber of single crystal furnace
11/16/2011	CN102242395A Continuous feeding device for growth of silicon single crystal and single crystal furnace equipped with same
11/16/2011	CN102002753B Processing method of phi 8-inch <110> czochralski silicon and thermal system thereof
11/16/2011	CN101671841B Method for preparing nitrogenous dopant for preparing czochralski silicon single crystal
11/10/2011	WO2011139402A1 Removing a sheet from the surface of a melt using gas jets
11/10/2011	WO2011138532A1 Carbon tape intended to receive a layer of a semiconductor material
11/10/2011	WO2011074848A3 Plasma arc torch positioning apparatus
11/10/2011	US20110271901 Removal of a sheet from a production apparatus
11/10/2011	US20110271899 Removing a sheet from the surface of a melt using gas jets
11/10/2011	US20110271898 Single-crystal manufacturing method
11/10/2011	US20110271897 Gas-lift pumps for flowing and purifying molten silicon
11/09/2011	EP2385157A1 Silica glass crucible
11/09/2011	EP2385156A1 Silica glass crucible
11/09/2011	EP2385025A1 Method for calculating temperature distribution in crucible
11/09/2011	CN202030859U Seed crystal gripping head for single crystal pulling process
11/09/2011	CN202030858U Heat-insulating cylinder for monocrystal pulling process
11/09/2011	CN202030857U Combined crucible for monocrystal pulling furnace
11/09/2011	CN202030856U Removal device for monocrystal pulling heater
11/09/2011	CN202030855U Mono-crystal furnace thermal field capable of increasing growth rate of mono-crystal furnace
11/09/2011	CN202030645U Metal mould for manufacturing crucible
11/09/2011	CN1993504B Apparatus for growing monocrystals from melt
11/09/2011	CN102234840A Method for preparing thin silicon wafer
11/09/2011	CN102234836A Czochralski silicon single-crystal furnace device and silicon single-crystal drawing method
11/09/2011	CN101760773B Monocrystal-pulling insulated feeding method and device thereof
11/09/2011	CN101717992B Carbon-carbon composite guide cylinder of CZ silicon crystal growing furnace and preparation method thereof
11/09/2011	CN101006205B Melter assembly and method for charging a crystal forming apparatus with molten source material
11/08/2011	US8053080 Modification process of synthetic silica powder and its quartz glass product
11/08/2011	US8052794 Directed reagents to improve material uniformity

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