Patents for C30B 11 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. bridgman- stockbarger method (5,247)
09/2009
09/30/2009CN101545133A Method for growing rare-earth ferrite magneto-optical crystal
09/29/2009US7595260 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
09/24/2009WO2009117545A1 System and method for arranging heating element in crystal growth apparatus
09/23/2009CN101538741A Synthetic utilization method of gallium arsenide polycrystal tail
09/23/2009CN101538739A Cadmium tungstate crystal and preparation method thereof
09/23/2009CN101537485A Thin shell floating method for manufacturing single crystal casting and device thereof
09/23/2009CN101537484A Method for improving temperature distribution in process of single crystal casting solidification
09/22/2009US7591895 Method and apparatus for producing crystals
09/17/2009DE102008039457A1 Apparatus for oriented solidification of melts in crucibles, especially production of mono- or multi-crystalline silicon, comprises induction heater mounted on base of crucible or plate which supports it
09/16/2009EP2100660A1 Method for producing semiconductor granules
09/15/2009US7588636 Method of production of silicon carbide single crystal
09/10/2009US20090223439 Apparatuses and Methods for Growing Single Crystals
09/10/2009DE102007061704A1 Verfahren zur Herstellung eines ein- oder polykristallinen Materials Process for the preparation of a mono- or polycrystalline material
09/09/2009EP2098314A1 Method and apparatus for producing metallic casting moulds using the lost wax casting method
09/09/2009EP1617939B1 Method for the production of semiconductor granules
09/09/2009CN101525707A Method for reducing tendency of TCP phase precipitation in nickel-base single crystal superalloy
09/09/2009CN101525706A Modification method for enhancing high-temperature creep resistance in nickel-base single crystal superalloy
09/09/2009CN101525705A Modification method for reducing contraction cavities in nickel-base single crystal superalloy
09/09/2009CN101524721A Method for preparing single-crystal copper bonding wire
09/03/2009WO2009106625A1 Method for the crystallogenesis of a material electrically conducting at the molten state
09/03/2009DE10239083B4 Vorrichtung zum Versorgen einer Prozesskammer mit fluiden Medien und deren Verwendung Device for supplying a process chamber with fluid media and their use
09/03/2009DE102007020239B4 Vorrichtung zur Herstellung von Kristallen aus elektrisch leitfähigen Schmelzen An apparatus for producing crystals of electrically conductive melting
09/02/2009EP1966847A4 Methods for oriented growth of nanowires on patterned substrates
09/01/2009US7582162 Semiconductor device and semiconductor device production system
08/2009
08/27/2009US20090211516 Method of manufacturing single crystal wire
08/26/2009EP2092999A1 Method of manufacturing vanes with directional solidification
08/26/2009EP1866247B1 Device and method for the crystallisation of nonferrous metals
08/26/2009CN101514492A Large size potassium strontium borate nonlinear optical crystal, preparation and use thereof
08/26/2009CN101514491A Ba3BP3O12 crystalloid, growing method and application thereof
08/26/2009CN101514489A Fluoborate and crystal containing rare earth ions, growing method and application of crystal
08/26/2009CN101514481A Method for growing a BaAlBO3F2 crystal by fusing agent
08/20/2009WO2009100694A1 Device and method for preparing crystalline bodies by directional solidification
08/20/2009DE10026319B4 Verfahren zum Herstellen einkristalliner Körper A method for producing monocrystalline body
08/19/2009EP2089319A2 Method of purifying metallurgical silicon by directional solidification
08/19/2009EP1676299B8 Crystal growing unit
08/19/2009CN100529199C Class-1 piezoelectric monocrystal and growing method thereof
08/19/2009CN100528410C Method of removing casting defects
08/18/2009US7575038 Single crystal seed
08/18/2009CA2548936C Silicon feedstock for solar cells
08/12/2009EP1954856B1 Crucible for the crystallization of silicon and process for making the same
08/12/2009EP1485956A4 Process of producing multicrystalline silicon substrate and solar cell
08/12/2009CN101503820A Methods and apparatus for manufacturing semiconductor wafers
08/12/2009CN101503819A Method and apparatus for growth of large size nonlinear optical crystal by copple and inoculating crystal
08/12/2009CN100526521C Beryllium fluoroborate non linear optical crystal and its growing method and use
08/12/2009CN100526520C Crystal growing crucible
08/11/2009US7572334 Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
08/05/2009CN101498040A K3B6O10 Br nonlinear optical crystal, preparation and use
08/05/2009CN100523311C Crystal of barium tellurium aluminate, preparation method and application
07/2009
07/30/2009US20090188695 Nanostructures and method for making such nanostructures
07/30/2009DE102008035647A1 Kristallzüchtungsofen mit Struktur zur Verbesserung der Erwärmung Crystal growing furnace structure to improve the heating
07/29/2009EP2082419A2 Systems and methods for nanowire growth
07/29/2009EP1740331B1 Method and arrangement for crystal growth from fused metals or fused solutions
07/29/2009CN101495680A Reusable crucibles and method of manufacturing them
07/23/2009DE102008025829A1 Auflagetisch mit Heizelementen in einem Kristallzüchtungsofen Table with heating elements in a crystal growing furnace
07/23/2009DE102007046409B4 Vorrichtung zur Herstellung von Kristallen aus elektrisch leitenden Schmelzen An apparatus for producing crystals of electrically conductive melting
07/21/2009US7563404 Method for the production of semiconductor granules
07/21/2009US7563320 Hydrothermal method for preparing large single crystals of scandium, yttrium, and lanthanide sesquioxides
07/16/2009DE102007028548B4 Vorrichtung und Verfahren zur Herstellung von Kristallen aus elektrisch leitenden Schmelzen Apparatus and method for producing crystals of electrically conductive melting
07/09/2009WO2009083694A1 Apparatus including a plasma torch for purifying a semiconductor material
07/09/2009US20090173274 PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED THEREON
07/08/2009CN100511743C Method for producing a device for direct thermoelectric energy conversion
07/08/2009CN100510199C Apparatus for crystal production
07/07/2009US7556688 Method for achieving low defect density AlGaN single crystal boules
07/01/2009EP1676299B1 Crystal growing unit
06/2009
06/25/2009US20090158995 Crystal-Growing furnace with convectional cooling structure
06/25/2009US20090158993 Method for producing a monocrystalline or polycrystalline semiconductore material
06/25/2009DE102008026144A1 Kristallzüchtungsofen mit Konvektionskühlungsstruktur Crystal growing furnace with Konvektionskühlungsstruktur
06/24/2009EP2072645A2 Method for producing a monocrystalline or polycrystalline semiconductor material
06/24/2009CN101463497A Method for producing a monocrystalline or polycrystalline semiconductor material
06/17/2009EP2071062A1 Process for producing group iii elment nitride crystal, and group iii element nitride crystal
06/17/2009CN100500950C Nanostructures and methods for manufacturing the same
06/16/2009US7547367 alloying a metal alloy containing nickel, manganese and gallium; forming the large crystal structure of the shape memory metal alloy and has a directional in a desired way
06/10/2009EP2068348A1 Conductive isostructural compounds
06/10/2009CN101451265A Gaas single crystal substrate and epitaxial wafer using the same
06/04/2009WO2009069706A1 Optical material, wavelength conversion element, single crystal of ferroelectric fluoride, and process for producing single crystal of ferroelectric fluoride
06/04/2009WO2007008383A3 Detachable edge ring for thermal processing support towers
06/02/2009CA2555754C Scintillation substances (variants)
05/2009
05/28/2009WO2009065444A1 A method of producing polycrystalline and single crystal silicon
05/28/2009WO2009042157A3 Integral single crystal/columnar grained component and method of casting the same
05/28/2009WO2006028868A3 Method and apparatus for growth of multi-component single crystals
05/27/2009CN101440525A Method and apparatus for preparing single crystal in copple melt
05/20/2009CN101435108A Large size nonlinear optical crystal lead bromoborate, and preparation and use thereof
05/20/2009CN101435105A Preparation of low oxygen content silicon crystal
05/20/2009CN100489154C Carbon film coating method and device for quartz crucible for use in crystal growth
05/19/2009US7534412 Large-volume CaF2 single crystals with reduced scattering and improved laser stability, and uses thereof
05/14/2009WO2009059756A1 Firmly adhering separating layer comprising silicon nitride
05/14/2009US20090120354 Crystal growth method, crystal growth apparatus, group-iii nitride crystal and group-iii nitride semiconductor device
05/14/2009CA2702380A1 Firmly adhering silicon nitride-containing release layer
05/13/2009EP2058289A1 Strongly adhesive silicium nitride release layer
05/13/2009EP2058279A1 Metallic silicon and process for producing the same
05/13/2009CN101429678A Apparatus for producing group III element nitride semiconductor and method for producing the semiconductor
05/13/2009CN101429676A Production method of Zintl phase monocrystal
05/12/2009US7531472 Configured from numerous nanowires grown in a uniform direction, stem shaped cross-sectional configuration
05/12/2009US7531038 Crystal growth method
05/07/2009US20090117683 Method of manufacturing single crystal substate and method of manufacturing solar cell using the same
05/06/2009EP2055814A1 Semiconductor substrate for epitaxial growth and process for producing the same
05/06/2009EP2055811A2 Nitride semiconductor substrate and method of manufacturing the same and field-effect transistor
05/05/2009US7527690 Ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof
04/2009
04/30/2009WO2009053473A1 Formation of a thin film of molecular organic semiconductor material
04/29/2009CN101418469A Group iii nitride semiconductor manufacturing system
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