| Patents for C30B 11 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. bridgman- stockbarger method (5,247) |
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| 06/13/2012 | CN102492991A Lead niobate zincate-lead titanate (PZNT) single crystal material and pyroelectric application thereof |
| 06/13/2012 | CN102492980A Method and device for preparing silicon cores for polycrystalline silicon deposition |
| 06/13/2012 | CN102492882A Capture and conversion rule for simulation of solidified microstructure of magnesium alloy |
| 06/13/2012 | CN102051670B Continuous discharging device without valve control |
| 06/07/2012 | WO2012074934A1 Feedstock melting and casting system and process |
| 06/07/2012 | WO2012072633A1 Heat exchanger for a system for solidifying and/or crystallizing a semiconductor |
| 06/07/2012 | US20120137962 Gas supply device for use in crystal-growing furnace |
| 06/07/2012 | US20120137961 Method for growing single crystal of group iii metal nitride and reaction vessel for use in same |
| 06/06/2012 | CN202265623U 一种用多晶铸锭炉铸造类单晶硅用的坩埚 A crucible polycrystalline ingot casting furnaces used in class Monocrystalline |
| 06/06/2012 | CN102485970A Method for preparing solar-grade polycrystalline silicon ingots through directional solidification |
| 06/06/2012 | CN102094232B Polycrystal furnace thermal field with rapid cooling and using method thereof |
| 06/06/2012 | CN102011195B Preparation method of directional solidification high-Nb TiAl alloy single crystal |
| 06/05/2012 | CA2521498C Nanowhiskers with pn junctions and methods of fabricating thereof |
| 05/31/2012 | WO2012071531A1 Germanium enriched silicon for solar cells |
| 05/31/2012 | DE112006000771B4 Si-dotierter GaAs-Einkristallingot und Verfahren zur Herstellung desselbigen, und Si-dotierter GaAs-Einkristallwafer, der aus Si-dotiertem GaAs-Einkristallingot hergestellt wird Si-doped GaAs single crystal ingot and process for producing desselbigen, and Si-doped GaAs single crystal wafer, which is made of Si-doped GaAs single crystal ingot |
| 05/30/2012 | EP2458041A2 Crystal comprising a semiconductor material |
| 05/30/2012 | EP2458039A1 Method of producing sic single crystal |
| 05/30/2012 | EP2456909A1 Apparatus for producing multicrystalline silicon ingots by induction method |
| 05/30/2012 | CN202246976U Air supply emergency system for polycrystalline ingot casting furnace |
| 05/30/2012 | CN202246975U Thermal insulating cage steel frame structure capable of preventing deformation and used in monocrystal-like ingot casting furnace |
| 05/30/2012 | CN202246974U Polysilicon thermal field with local cooling device |
| 05/30/2012 | CN202246973U Crucible |
| 05/30/2012 | CN102482166A Method for preparing of ceramic shaped part, apparatus and use thereof |
| 05/30/2012 | CN102127803B Growth method of rectangular specially-shaped sapphire crystal |
| 05/30/2012 | CN101935879B Ytterbium/bismuth dual-doped lead tungstate crystal and preparation method thereof |
| 05/30/2012 | CN101892514B Process for growing sodium nitrate monocrystal by Bridgman method |
| 05/30/2012 | CN101824646B Vacuum closed-type Bridgman-Stockbarge method for growing thallium doped sodium iodide monocrystal |
| 05/30/2012 | CN101775639B Lining for polysilicon crystal oven wall protection and manufacturing method thereof |
| 05/30/2012 | CN101603205B Carbon-doped yttrium aluminium garnet crystal and two-step preparation method thereof |
| 05/30/2012 | CN101418469B Group iii nitride semiconductor manufacturing system |
| 05/29/2012 | US8187563 Method for producing Si bulk polycrystal ingot |
| 05/24/2012 | US20120126200 Nanowhiskers with PN Junctions, Doped Nanowhiskers, and Methods for Preparing Them |
| 05/24/2012 | US20120125254 Method for Reducing the Range in Resistivities of Semiconductor Crystalline Sheets Grown in a Multi-Lane Furnace |
| 05/24/2012 | DE102010044017A1 Herstellung von strahlungsbeständigen Fluorid-Kristallen, insbesondere von Kalziumfluorid-Kristallen Preparation of radiation-resistant fluoride crystals, in particular crystals of calcium fluoride |
| 05/23/2012 | EP2454398A2 Coated crucibles and methods for preparing and use thereof |
| 05/23/2012 | CN202226950U Inner thermal insulation member lifting device for single crystal silicon ingot furnace |
| 05/23/2012 | CN202226949U Graphite heater of polysilicon ingot furnace |
| 05/23/2012 | CN102471924A 通过感应方法生产多晶硅锭的装置 Polycrystalline silicon ingot production plant by induction method |
| 05/23/2012 | CN102471921A 用于制造半导体晶体的方法和装置以及半导体晶体 Method and apparatus for manufacturing a semiconductor crystal and a semiconductor crystal |
| 05/23/2012 | CN102465331A 抗辐射性的氟化物晶体的生产工艺 Production processes radiation resistance of fluoride crystal |
| 05/23/2012 | CN101831702B Copper-doped yttrium aluminate crystal for thermoluminescence and photoluminescence and preparation method thereof |
| 05/23/2012 | CN101701354B Method for preparing mercury indium telluride single crystal and special quartz crucible thereof |
| 05/22/2012 | US8181692 Method and apparatus for production of a cast component |
| 05/16/2012 | EP1969163B1 Device and process for producing a block of crystalline material |
| 05/16/2012 | DE19855061B4 Schmelzofen zum Schmelzen von Silizium Melting furnace for melting silicon |
| 05/16/2012 | CN102453960A Selenium-gallium-silicon-silver compound, selenium-gallium-silicon-silver nonlinear optical crystal, and preparation method and application |
| 05/16/2012 | CN102453952A Gas supplying apparatus for crystal growth furnace |
| 05/10/2012 | WO2012015594A8 Mold shape to optimize thickness uniformity of silicon film |
| 05/10/2012 | US20120111265 Method and structure for nonlinear optics |
| 05/09/2012 | CN202214440U Heat-insulating device for crystal silicon ingot furnace |
| 05/09/2012 | CN202214439U High-efficient sapphire crystal growing furnace |
| 05/09/2012 | CN102443853A Preparation method of rare earth ion-doped large lead tungstate crystal |
| 05/09/2012 | CN102441658A Unidirectional solidification process and apparatus therefor |
| 05/09/2012 | CN101063231B Chromium doped molybdic acid aluminum potassium tunable laser crystal |
| 05/08/2012 | US8172944 Device for producing a block of crystalline material with modulation of the thermal conductivity |
| 05/08/2012 | US8172942 Arc discharge apparatus, apparatus and method for manufacturing vitreous silica glass crucible, and method for pulling up silicon single crystal |
| 05/03/2012 | WO2012021608A3 Temperature and field stable relaxor-pt piezoelectric single crystals |
| 05/03/2012 | US20120103412 Method for fabricating a laser-induced surface nanoarray structure, and device structure fabricated using said method |
| 05/02/2012 | CN102433585A Thermal field structure of quasi-monocrystal ingot furnace |
| 05/02/2012 | CN102031556B Growing process of polycrystalline cast ingot crystals |
| 04/26/2012 | WO2012054845A2 Intermediate materials and methods for high-temperature applications |
| 04/26/2012 | WO2012054101A1 Crystal growing system and method thereof |
| 04/25/2012 | EP2444531A2 Method and apparatus for growing semiconductor crystals with a rigid support and with carbon doping |
| 04/25/2012 | CN202204288U 多晶硅材料提纯用陶瓷坩埚 Polysilicon material was purified by a ceramic crucible |
| 04/25/2012 | CN202202019U 一种用于铸造法生长硅晶体的热交换台 A method for thermally grown silicon crystal casting exchange station |
| 04/25/2012 | CN202202011U 新型单晶炉热场 The new crystal furnace thermal field |
| 04/25/2012 | CN1826694B Nanowhiskers with PN junctions and methods of fabricating thereof |
| 04/25/2012 | CN102425003A 多晶硅铸锭炉运行中热电偶温度补偿方法、装置和系统 Polycrystalline silicon ingot furnace operation thermocouple temperature compensation method, apparatus and system |
| 04/25/2012 | CN101886288B 一种用于定向凝固法生长硅单晶的双层坩埚 A directional solidification of silicon single crystals grown by double crucible |
| 04/24/2012 | US8163083 Silica glass crucible and method for pulling up silicon single crystal using the same |
| 04/19/2012 | WO2012048905A1 Crucible for silicon and crucible arrangement |
| 04/19/2012 | US20120090537 Methods and apparatus for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics |
| 04/19/2012 | US20120090534 Solid state thermoelectric power converter |
| 04/19/2012 | DE102010048602A1 Schmelztiegel für Silizium, Schmelztiegelanordnung und Trenneinheit für einen Schmelztiegel Crucible for silicon melting crucible assembly and separation unit for a crucible |
| 04/18/2012 | CN202193875U 长晶装置 Long crystal device |
| 04/18/2012 | CN102418147A 高强度且完全抗氧化的第三代单晶高温合金及制备方法 High strength and completely resistant to oxidation third generation single crystal superalloy and preparation method |
| 04/12/2012 | DE102008027359B4 Verfahren zur intensiven Durchmischung von elektrisch leitenden Schmelzen in Kristallisations- und Erstarrungsprozessen Procedures for intensive mixing of electrically conductive melts in crystallization and solidification processes |
| 04/11/2012 | EP2242874B1 Device and method for preparing crystalline bodies by directional solidification |
| 04/11/2012 | CN102409394A 多晶硅铸锭用坩埚及其制备方法 Polycrystalline silicon ingot crucible and its preparation method |
| 04/11/2012 | CN102409393A 用于晶体生长炉坩埚的升降装置 For crystal growth furnace crucible lift device |
| 04/10/2012 | US8153470 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices |
| 04/04/2012 | EP2436806A1 Method for making a protective coating against oxidation at high temperature for refractory materials based on silicon and niobium. |
| 04/04/2012 | EP2435241A1 Aligned porous substrates by directional melting and resolidification |
| 04/04/2012 | CN102400219A 一种硼-镓共掺准单晶硅及其制备方法 A boron - a total of quasi-gallium-doped single-crystal silicon and its preparation method |
| 04/04/2012 | CN102400206A 一种提高单晶凝固温度梯度的复合式隔热挡板 A method for increasing the temperature gradient in the single crystal solidification of a composite heat-insulation baffle |
| 03/29/2012 | WO2012039976A1 Technique to modify the microstructure of semiconducting materials |
| 03/29/2012 | WO2012038432A1 Crystallization system and crystallization process for producing a block from a material with an electrically conductive molten mass |
| 03/28/2012 | EP2432610A1 Apparatus for the directed solidification of molten metals |
| 03/28/2012 | EP2162570B1 Device for producing crystals from electroconductive melts |
| 03/28/2012 | CN202175735U 硅液溢流即时反馈装置 Silicon liquid overflow instant feedback device |
| 03/28/2012 | CN102392301A Method for judging seed crystal melting state in directional solidification method and crystal pulling control system |
| 03/28/2012 | CN102392300A Production method of solar energy level polysilicon ingot with crystalline grains arranged regularly |
| 03/28/2012 | CN102392293A Crystal silicon ingot furnace thermal field thermal gate control device and control method thereof |
| 03/22/2012 | US20120070366 High-Purity Tellurium Dioxide Single Crystal and Manufacturing Method Thereof |
| 03/22/2012 | US20120067273 Methods for efficiently making thin semiconductor bodies from molten material for solar cells and the like |
| 03/22/2012 | DE102010041061A1 Kristallisationsanlage und Kristallisationsverfahren zur Herstellung eines Blocks aus einem Material, dessen Schmelze elektrisch leitend ist Crystallization system and crystallization method for manufacturing a block of a material whose melt is electrically conductive |
| 03/22/2012 | DE102010024010B4 Verfahren und Vorrichtung zum Herstellen von polykristallinen Siliziumblöcken Method and apparatus for producing polycrystalline silicon ingots |
| 03/22/2012 | DE102009045680B4 Vorrichtung und Verfahren zur Herstellung von Siliziumblöcken aus der Schmelze durch gerichtete Erstarrung Apparatus and method for the production of silicon ingots from the melt by directional solidification |
| 03/21/2012 | EP2430116A2 Scintillator crystal materials, scintillators and radiation detectors |
| 03/21/2012 | CN102388169A Pot for silicon suitable for producing semiconductors |