Patents for C30B 11 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. bridgman- stockbarger method (5,247)
05/2007
05/10/2007US20070101924 Indium phosphide substrate and indium phosphide monocrystal and method of manufacturing thereof
05/09/2007EP1783098A1 Cooled lump from molten silicon and process for producing the same
05/09/2007EP1495166B1 Method for producing for producing mono-crystalline structures
05/09/2007CN1961100A Directionally controlled growth of nanowhiskers
05/09/2007CN1958883A Crystal of barium tellurium aluminate, preparation method and application
05/08/2007US7214903 Melting and vaporizing apparatus and method
05/08/2007US7214269 Si-doped GaAs single crystal substrate
05/03/2007US20070099800 Enhanced melt-textured growth
05/02/2007CN1957117A Group III nitride semiconductor crystal, method for producing same, and group iii nitride semiconductor device
05/02/2007CN1956921A Cooled lump from molten silicon and process for producing the same
05/02/2007CN1313650C Growing method of rare-earth thiooxide crystal
05/01/2007US7211464 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
05/01/2007US7211146 Powder metallurgy crucible for aluminum nitride crystal growth
05/01/2007US7211142 CdTe single crystal and CdTe polycrystal, and method for preparation thereof
05/01/2007US7210516 Casting apparatus and method therefor
04/2007
04/26/2007DE10142651B4 Verfahren zur Herstellung von hoch homogenen strahlenbeständigen streufreien Einkristallen, eines damit erhaltenen Ingots sowie deren Verwendung Process for the preparation of highly homogeneous radiation resistant scattering-free single crystals of an ingot thus obtained and their use
04/25/2007CN1312329C Method for reducing oxygen component and carbon component in fluoride
04/24/2007US7208041 Method for single crystal growth of perovskite oxides
04/19/2007US20070084399 Crystal growth apparatus and manufacturing method of group III nitride crystal
04/19/2007DE102005049477A1 Production of gallium arsenic single crystalline material includes growing the crystalline material in a multiple heating system by solidification of melt of the material using vertical gradient freezing- or vertical Bridgman procedure
04/18/2007EP1540047A4 Oh and h resistant silicon material
04/18/2007CN1311106C Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon
04/17/2007US7204942 Method of making a fluoride crystalline optical lithography lens element blank
04/17/2007US7204294 Casting method
04/12/2007WO2007039310A1 Crucible for the crystallization of silicon and process for making the same
04/12/2007US20070079750 Method of laser writing refractive index patterns in silicon photonic crystals
04/12/2007CA2624887A1 Crucible for the crystallization of silicon and process for making the same
04/11/2007CN1946634A Nanostructures and method for making such nanostructures
04/11/2007CN1309879C Vessel for holding silicon and method of producing the same
04/05/2007WO2006082085A3 Method and device for producing oriented solidified blocks made of semi-conductor material
04/04/2007CN2885891Y Temperature control furnace for growth of arsenide gallium monocrystal
04/04/2007CN1942783A Scintillator material based on rare earth with a reduced nuclear background
04/04/2007CN1942611A Group iii nitride crystal substrate, method for producing same, and group iii nitride semiconductor device
04/04/2007CN1308501C Laser seed crystal centering method for top seed crystal process of growing crystal
04/03/2007US7198738 Can be used as high-performance wavelength converting crystal; optical parametric oscillator
04/03/2007US7198673 Optical lithography fluoride crystal annealing furnace
04/03/2007US7198672 Drop tube type granular crystal producing device
03/2007
03/29/2007DE102005044697A1 Calcium fluoride mono-crystal for production of optical products, lasers, computer chips and integrated circuits, is doped with Al, Ga, In or Tl-ions
03/28/2007EP1766107A2 Process for producing a crystalline silicon ingot
03/28/2007CN1936106A Method for treating crystal growth raw material
03/28/2007CN1307329C Visual temperature ladder crystal condensation growth device with low oblique and growth method thereof
03/28/2007CN1307013C Method and equipment for successive oriented solidification casting and wire rod or plate and belt material thereby
03/21/2007CN1932087A Bridgman-stockbarge process for growing scintillation crystal LaCl3:Ce3+
03/21/2007CN1306075C Anion and cation co-doped PbWO4 crystal and its growth method
03/21/2007CN1306073C Visual low oblique zone melting growth device of crystals and growth method therefor
03/21/2007CN1305763C Process of producing multicrystalline silicon substrate and solar cell
03/20/2007US7192481 Radiation detector
03/15/2007US20070056508 Apparatus for producing fluoride crystal
03/14/2007CN1930328A Apparatus for crystal production
03/14/2007CN1930079A Elongated nano-structures and related devices
03/14/2007CN1304648C Bismuth sodium potassium titanate series nonlead ferroelectric piezoelectric monocrystal and its growing method and equipment
03/07/2007CN1924115A Novel method of preparing cube zirconium oxide single crystal
03/07/2007CN1303263C Charge for vertical boat growth process and use thereof
03/01/2007WO2007025118A2 System and method for crystal growing
03/01/2007US20070048979 Heating apparatus, and coating and developing apparatus
03/01/2007US20070048492 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
03/01/2007US20070044707 System and method for crystal growing
02/2007
02/28/2007EP1757716A1 Method and apparatus for preparing crystal
02/28/2007CN1922345A Method of manufacturing compound single crystal and apparatus for manufacturing it
02/28/2007CN1920117A Method of producing major diameter TbDyFe-base alloy directionally solidified crystal
02/28/2007CN1920116A Growth system of crystal by resistance heating vertical multi-crucible descent method
02/28/2007CN1302158C Mould parts of silicon nitride and method for producing such mould parts
02/28/2007CN1302156C Method for producing mono-crystalline structures
02/22/2007US20070039544 Method for casting polycrystalline silicon
02/22/2007US20070039543 Phase delay element and method for producing a phase delay element
02/21/2007EP1755155A2 Semiconductor nanostructures and fabricating the same
02/21/2007EP1754811A1 Iii group nitride crystal and method for preparation thereof, and iii group nitride crystal substrate and semiconductor device
02/21/2007EP1754810A1 Group iii nitride semiconductor crystal, method for producing same, and group iii nitride semiconductor device
02/21/2007EP1754809A2 Large volume oriented single crystals with a homogeneous refractive index and low stress related birefringence
02/21/2007EP1754807A2 An insulation package for use in high temperature furnaces
02/21/2007EP1754806A1 Method for casting polycrystalline silicon
02/20/2007US7179331 Crystal growing equipment
02/15/2007US20070034146 Silicon manufacturing apparatus
02/15/2007US20070034141 Hybrid stockbarger zone-leveling melting method for directed crystallization and growth of single crystals of lead magnesium niobate-lead titanate (PMN-PT) solid solutions and related piezocrystals
02/15/2007US20070034139 Method for analyzing impurities (color centers) of fluoride and process for producing material for growing single crystal
02/15/2007US20070033810 Diamond tool, synthetic single crystal diamond and method of synthesizing single crystal diamond, and diamond jewlry
02/15/2007DE102005037393A1 Growth of large volume crystals from melt calcium fluoride crystal material, comprises heating a material in crucible by heating elements, and forming single crystal at the crucible base by reducing crystallization
02/14/2007EP1751055A1 Nanostructures and method for making such nanostructures
02/13/2007US7175707 P-type GaAs single crystal and its production method
02/13/2007US7175706 Process of producing multicrystalline silicon substrate and solar cell
02/13/2007US7175705 Process for producing compound semiconductor single crystal
02/13/2007CA2436391C Method for manufacturing highly-crystallized oxide powder
02/08/2007US20070032052 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
02/08/2007US20070032051 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
02/08/2007US20070032023 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
02/08/2007US20070028835 Crucible apparatus and method of solidifying a molten material
02/07/2007EP1341941B1 Metal strip for epitaxial coatings and method for the production thereof
02/07/2007CN1299406C High repetition rate excimer laser system
02/07/2007CN1298896C Er3+, Yb3+, Ce3+ codoped CaF2 laser crystal and its growth method
02/07/2007CN1298895C Up-conversion laser crystal Er3+, Yb3+, Na+:CaF2
02/01/2007US20070026645 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
02/01/2007US20070023979 Method for the production of semiconductor granules
01/2007
01/31/2007EP1747577A2 Systems and methods for nanowire growth and harvesting
01/31/2007CN1904148A Beryllium fluoroborate non linear optical crystal and its growing method and use
01/30/2007US7169242 Method of removing casting defects
01/25/2007US20070017437 Grown diamond mosaic separation
01/24/2007EP1417358B1 Method for producing a monocrystalline component, having a complex moulded structure
01/24/2007CN1902341A Scintillation substances (variants)
01/24/2007CN1902335A Melting and vaporizing apparatus and method
01/24/2007CN1902129A Silicon feedstock for solar cells
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