Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 11 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. bridgman- stockbarger method
Patents for C30B 11 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. bridgman- stockbarger method (5,247)
01/2011
01/05/2011CN201695103U Equipment for growing dilead pentachloride kalium crystal under positive pressure environment
01/05/2011CN101935879A Ytterbium/bismuth dual-doped lead tungstate crystal and preparation method thereof
01/05/2011CN101935874A Thulium doped lead fluoride crystal and preparation method thereof
01/05/2011CN101935869A Crucible and substrate slice for growing and casting monocrystalline silicon
01/05/2011CN101935868A Crucible for growing large-grain cast polycrystalline silicon
01/05/2011CN101935867A Method for growing large-grain cast multicrystalline silicon
12/2010
12/30/2010DE102005032789B4 Behälter mit Beschichtung und Herstellungsverfahren Container coating and manufacturing methods
12/29/2010CN101928980A Seeding guidance die for growing silicon crystal by directional solidification method
12/29/2010CN101570882B Crucible for preparing pure metal single crystal after orientation determination and application method thereof
12/29/2010CN101565192B Methods for preparing anhydrous lithium iodide and scintillation crystal doped with lithium iodide
12/22/2010EP2262933A1 Method for producing photovoltaic-grade crystalline silicon by addition of doping impurities and photovoltaic cell
12/22/2010EP2262932A1 Method for the crystallogenesis of a material electrically conducting at the molten state
12/22/2010CN101275281B Method for growth and anneal of zincum-cadmium-tellurium single-crystal, special copple for anneal
12/16/2010US20100314550 Scintillator for neutron detection and neutron detector
12/15/2010EP1670976B1 Spinel articles
12/15/2010CN101914809A Nonlinear optical crystal of potassium borate chloride compound and preparation method as well as application thereof
12/15/2010CN101914806A Unidirectional solidification furnace with improved gas path
12/15/2010CN101914805A Directional solidification furnace with improved crucible cover part
12/08/2010CN101906657A System for manufacturing single crystal ingot
12/08/2010CN101311343B Vacuum furnace suitable for preparing large-diameter high-purity polysilicon ingot
12/01/2010CN101899711A Thulium-doped gadolinium oxyorthosilicate scintillator and preparation method thereof
11/2010
11/25/2010WO2010133200A1 Apparatus for the directed solidification of molten metals
11/25/2010WO2010105617A8 Crucible for melting and crystallizing a metal, a semiconductor, or a metal alloy, component for a crucible base body of a crucible, and method for producing a component
11/25/2010US20100294198 Crystal growing system having multiple rotatable crucibles and using a temperature gradient method
11/25/2010US20100294195 Method for charging with liquefied ammonia, method for producing nitride crystal, and reactor for growth of nitride crystal
11/24/2010CN201648561U Unidirectional solidification device capable of partially heating in intensified manner
11/24/2010CN101892514A Process for growing sodium nitrate monocrystal by Bridgman method
11/18/2010US20100288187 Method for growing silicon carbide single crystal
11/17/2010EP2251459A1 Method and device for preparing liquid silicon
11/17/2010CN201634791U Flame fusion furnace body for growing rutile single crystals
11/17/2010CN101887935A Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
11/17/2010CN101886292A Er-doped gadolinium yttrium silicate laser crystal and preparation method thereof
11/17/2010CN101886288A Double-layer crucible for growing silicon single crystals by directional solidification method
11/17/2010CN101885511A Method for preparing monoclinic lead tungstate nano belt crystal material
11/17/2010CN101481825B Crystal growth furnace with convection type heat radiation structure
11/16/2010US7833347 Process and apparatus for producing nitride single crystal
11/09/2010US7828896 Methods of growing a group III nitride crystal
11/03/2010CN101876772A Compound potassium lead borophosphate nonlinear optical crystal as well as preparation method and application thereof
11/02/2010US7824494 Method and apparatus for production of a cast component
10/2010
10/28/2010WO2010123379A1 Method for preparing of ceramic shaped part, apparatus and use thereof
10/28/2010DE102005037393B4 Verfahren sowie Vorrichtung zur Züchtung von grossvolumigen Einkristallen unter Ausbildung einer konvexen Phasengrenzfläche während des Kristallisationsprozesses Method and apparatus for the production of large-volume single crystals, forming a convex phase boundary during the crystallization process
10/27/2010EP2242874A1 Device and method for preparing crystalline bodies by directional solidification
10/26/2010CA2628350C Method and apparatus for production of a cast component
10/21/2010WO2008132323A3 Device and method for producing self-sustained plates of silicon or other crystalline materials
10/20/2010CN101864596A Yb, Gd co-doped barium fluoride crystal and preparation method thereof
10/20/2010CN101864593A N-doped crystalline silicon and preparation method thereof
10/19/2010US7815733 Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal
10/19/2010CA2417992C Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
10/14/2010DE102009015236A1 Sinterkörper Sintered body
10/14/2010DE102009015113A1 Device for growing large-volume single crystals, comprises crucible, which is surrounded by jacket heating element and disposes on both sides over movable insulation elements, where the jacket heating element is upwardly movably arranged
10/12/2010US7811383 Device for making monocrystalline or multicrystalline materials, in particular multicrystalline silicon
10/12/2010US7811380 Process for obtaining bulk mono-crystalline gallium-containing nitride
10/12/2010US7810547 Single crystal seed
10/07/2010WO2010112259A1 Pot for silicon suitable for producing semiconductors
10/07/2010US20100255663 Silicon crystallization apparatus and silicon crystallization method thereof
10/06/2010EP2236469A1 Vitreous silica crucible for pulling silicon single crystals
10/06/2010EP2235762A2 Method of making ternary piezoelectric crystals
10/06/2010EP2234941A1 Low thermal conductivity low density pyrolytic boron nitride material, method of making, and articles made therefrom
10/06/2010CN201598346U 水平单晶生长用长方形舟 The level of single crystal growth rectangular boat
10/06/2010CN101851783A High-purity tellurium dioxide single crystal and preparation method
09/2010
09/30/2010US20100243990 Nanosensors
09/29/2010EP2231518A1 Apparatus including a plasma torch for purifying a semiconductor material
09/29/2010CN101845666A N-doped crystalline silicon and preparation method thereof
09/23/2010WO2010107764A1 Relaxor-pt based ferroelectric single crystals
09/23/2010WO2010106056A1 Purifying metallurgical silicon
09/23/2010WO2010105617A2 Crucible for melting and crystallizing a metal, a semiconductor, or a metal alloy, component for a crucible base body of a crucible, and method for producing a component
09/23/2010US20100236472 Method for growing silicon carbide single crystal
09/22/2010CN201588006U Automatic pressure stabilization system in vertical gradient freeze technique single crystal growing system
09/22/2010CN201588005U Two-stage side heater in vertical gradient freeze crystal growing furnace
09/21/2010US7799385 Method of preparation of monolithic hydrated aluminas, amorphous or crystalline aluminas, aluminates and composite materials by oxidation of aluminium or of an aluminium alloy
09/15/2010EP2228468A1 Closure for silica glass crucible, silica glass crucible and method of handling the same
09/15/2010CN101831703A Borate compound gadolinium-lanthanum-scandium borate and mono-crystal, preparation method and application thereof
09/15/2010CN101831702A Copper-doped yttrium aluminate crystal for thermoluminescence and photoluminescence and preparation method thereof
09/14/2010US7794539 Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby
09/08/2010CN101824646A Vacuum closed-type Bridgman-Stockbarge method for growing thallium doped sodium iodide monocrystal
09/02/2010US20100221142 Removal of a sheet from a production apparatus
09/01/2010CN201567386U Hot crucible releasing device
09/01/2010CN201567385U Raw material corrosion equipment system applied to single crystal growth of gallium arsenide by vertical temperature gradient method or vertical Bridgman method
08/2010
08/31/2010US7785416 Crucible and single crystal growth method using crucible
08/25/2010CN101440525B Method and apparatus for preparing single crystal in copple melt
08/24/2010USRE41551 Method of preparing group III-V compound semiconductor crystal
08/24/2010US7780784 Molding assembly for forming ingot and a method of forming ingot
08/24/2010US7779890 Method and apparatus for production of a cast component
08/18/2010CN101245490B Flux growth method for CsLiB6O10 crystal
08/17/2010USRE41512 Apparatus and method for manufacturing semiconductor grains
08/17/2010US7776153 Method and apparatus for producing large, single-crystals of aluminum nitride
08/12/2010US20100203350 Methods and Apparatuses for Manufacturing Cast Silicon from Seed Crystals
08/11/2010EP2216420A2 Nickel-base superalloys
08/11/2010CN201545937U Crucible rod
08/11/2010CN201545932U Silica crucible dedicated for preparation of mercury indium telluride (MIT) single crystal
08/11/2010CN101799197A Toxic polluted air replacing device applied to Bridgman method single crystal production shop
08/11/2010CN101798703A Bridgman-method single crystal production device with integrated environment maintenance
08/11/2010CN101798057A Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
08/10/2010US7771689 Bulk synthesis of metal and metal based dielectric nanowires
08/10/2010US7771531 Manufacturing method and usage of crystallized metal oxide thin film
08/05/2010WO2010088046A1 Seed layers and process of manufacturing seed layers
08/05/2010WO2010086378A1 Method for forming nanowires and associated method for manufacturing an optical component
08/05/2010DE102007035756B4 Verfahren zur Herstellung von Nichteisenmetall-Blöcken A process for the production of non-ferrous metal-blocks
08/04/2010EP2212934A1 Formation of a thin film of molecular organic semiconductor material
08/04/2010CN201538827U Crucible cover plate capable of adjusting temperature gradient of solid liquid interface
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