Patents for C30B 11 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. bridgman- stockbarger method (5,247)
04/2006
04/26/2006CN1763980A Silicon added gallium arsenide single crystallization base plate
04/26/2006CN1763271A Anion and cation co-doped PbWO4 crystal and its growth method
04/26/2006CN1763269A Laser crystal with shortwave stimulated emission
04/25/2006US7035306 Method of assaying fluorite sample and method of producing fluorite crystal
04/25/2006US7033563 Method for reducing oxygen component and carbon component in fluoride
04/25/2006US7033433 Crystal growth methods
04/20/2006US20060081173 Device and method for forming macromolecule crystal
04/18/2006US7029644 Method for producing a polycrystalline silicon, polycrystalline silicon and solar cell
04/13/2006US20060076324 Melting and vaporizing apparatus and method
04/13/2006US20060075960 Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates
04/13/2006DE102004048454A1 Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen A process for the production of group III-nitride bulk crystals or crystal layers of molten metal
04/12/2006CN1250779C Pyrolyzing borium nitride crucible and method
04/11/2006US7025827 Doped semiconductor wafer of float zone pulled semiconductor material, and process for producing the semiconductor wafer
04/06/2006US20060070652 Drop tube type granular crystal producing device
04/05/2006EP1643017A1 Crucible and method of growing single crystal by using crucible
04/05/2006CN1249273C Growth method of titanium doped saphire laser crystal
04/05/2006CN1249271C Growth method of gallium arsenide monocrystal
03/2006
03/30/2006WO2006033534A1 Single crystal wire and manufacturing method of the same
03/29/2006CN1754012A Annealing method for halide crystal
03/29/2006CN1247829C Rare-earth supermagnetostrictive material one step preparation and apparatus and products thereof
03/23/2006WO2006030718A1 METHOD FOR PRODUCING AlN SINGLE CRYSTAL AND AlN SINGLE CRYSTAL
03/22/2006CN1750995A A ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof
03/22/2006CN1749447A Process for finishing a single-crystal metal sheet or oriented solidification metal sheet surface
03/21/2006US7014707 Apparatus and process for producing crystal article, and thermocouple used therein
03/21/2006US7014702 Method and apparatus for preparation of binary and higher order compounds and devices fabricated using same
03/16/2006WO2005099934A3 Method and arrangement for crystal growth from fused metals or fused solutions
03/16/2006US20060057360 Nanostructures formed of branched nanowhiskers and methods of producing the same
03/16/2006US20060057317 Vessel for holding silicon and method of producing the same
03/16/2006US20060054936 Nanosensors
03/16/2006US20060054081 Rotationally-vibrated unidirectional solidification crystal growth system and its method
03/16/2006US20060054078 Liquid-phase growth apparatus and method
03/15/2006EP1634981A1 Indium phosphide substrate, indium phosphide single crystal and process for producing them
03/15/2006EP1634980A1 Method for producing group iii nitride single crystal and apparatus used therefor
03/15/2006EP1634334A1 Nanowhiskers with pn junctions and methods of fabricating thereof
03/14/2006US7011141 Apparatus and method for producing single crystal metallic objects
03/09/2006US20060048703 Method of fabricating multiple nanowires of uniform length from a single catalytic nanoparticle
03/09/2006US20060048697 Monitoring and control of a fabrication process
03/08/2006EP1563714A4 Method and apparatus for heating refractory oxides
03/08/2006EP1535309A4 Radiation detector
03/02/2006US20060042540 Manufacturing equipment of SiC Single crystal and method for manufacturing SiC single crystal
03/01/2006CN1742120A Vessel for holding silicon and method of producing the same
02/2006
02/28/2006US7005015 A high-temperature component made of a nickel super-alloy consists of in wt %: 11-13% of Chromium, 3-5% of tungsten, 0.5- 2.5% of molybdenum, 3-5% aluminum, 3-5% of titanium , 3-7% of tantalum, 1-5% Re, reminder Nickel
02/23/2006US20060037531 Furnace purification and metal fluoride crystals grown in a purified furnace
02/21/2006US7002230 CdTe-base compound semiconductor single crystal for electro-optic element
02/21/2006US7001543 Apparatus and method for manufacturing semiconductor grains
02/21/2006US7001462 Method for making an oriented optical fluoride crystal blank
02/21/2006US7001458 Process for growing of optical fluorite single crystals
02/21/2006US7001457 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
02/16/2006US20060032434 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
02/16/2006US20060032431 High pressure crystal growth apparatuses and associated methods
02/16/2006US20060032429 High pressure split die and associated methods
02/16/2006US20060032428 Process for obtaining of bulk monocrystalline gallium-containing nitride
02/14/2006US6997987 Optical lithography fluoride crystal annealing furnace
02/09/2006US20060030084 Manufacture of electronic devices comprising thin-film circuit elements
02/09/2006US20060027041 Melting and homogenizing a hydrogen storage alloy in a floating zone melting furnace; and gradually cooling at a cooling rate of 5 degrees C./min. or less to solidify and recover the alloy; reduced segregation, precipitates, or inclusions
02/08/2006EP1623059A2 System and method of making single-crystal structures through free-form fabrication techniques
02/08/2006CN1241270C Method for producting high-purity silicon for solar energy cell
02/07/2006US6994835 Silicon continuous casting method
02/02/2006WO2003091464A3 Heating to control solidification of cast structure
02/02/2006US20060022191 Nanostructure, electronic device having such nanostructure and method of preparing nanostructures
02/02/2006US20060021566 Method and apparatus for forming long single crystals with good uniformity
02/02/2006DE202004020811U1 Process for preparation of a low stress large volume crystal of defined height and diameter having a small double refraction and homogeneous refractive index useful for production of optical elements, computer chips and integrated circuits
02/01/2006EP1587971A4 Method and apparatus for producing large, single-crystals of aluminum nitride
01/2006
01/26/2006US20060019472 Systems and methods for nanowire growth and harvesting
01/26/2006US20060019470 Directionally controlled growth of nanowhiskers
01/26/2006US20060016389 Partially devitrified crucible
01/26/2006DE102005028435A1 Production of container for melting and/or crystallizing non-ferrous metals comprises preparing container green body and applying layer made from mixture of silicon nitride powder and an inorganic binder on the inside of the container
01/25/2006EP1617939A1 Method for the production of semiconductor granules
01/24/2006US6989060 Calcium fluoride crystal and method and apparatus for using the same
01/19/2006WO2006005416A1 Method for producing a nonstick ingot mold
01/19/2006US20060011603 Melting and vaporizing apparatus and method
01/18/2006EP1616343A2 Apparatus and method for balanced pressure growth of group iii-v monocrystalline semiconductor compounds
01/12/2006WO2006005018A2 Process for producing a crystalline silicon ingot
01/12/2006WO2006002779A1 Production method for chills comprising an anti-adhesive coating
01/12/2006US20060005763 Method and apparatus for producing large, single-crystals of aluminum nitride
01/11/2006EP1613549A1 Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
01/05/2006US20060000409 Process for producing a crystalline silicon ingot
01/04/2006EP1612539A1 Method for analyzing impurities (color centers) of fluoride and process for producing material for growing single crystal
01/04/2006CN1717466A Method for preparing rare-earth halide blocks
01/03/2006US6982001 Dehydroxylation and purification of calcium fluoride materials using a halogen containing plasma
12/2005
12/29/2005WO2004079787A3 Apparatus and method for balanced pressure growth of group iii-v monocrystalline semiconductor compounds
12/28/2005CN1233881C TGT growth method of quadrivalent chromium-doped magnesium silicate crystal
12/22/2005WO2005121418A1 Iii group nitride crystal and method for preparation thereof, and iii group nitride crystal substrate and semiconductor device
12/22/2005WO2005121416A1 Method and apparatus for preparing crystal
12/22/2005US20050282364 Method of fabricating a semiconductor thin film and semiconductor thin film fabrication apparatus
12/21/2005CN1711648A Nanostructure, electronic device having such nanostructure and method of preparing nanostructure
12/15/2005WO2005119753A2 Systems and methods for nanowire growth and harvesting
12/15/2005US20050275144 Melting crucible
12/15/2005CA2564220A1 Systems and methods for nanowire growth and harvesting
12/14/2005EP0896643B1 Method and apparatus for growing oriented whisker arrays
12/14/2005CN2745959Y Crystal growing device by biheating temperature gradient method
12/08/2005WO2005116305A1 Method for producing calcium fluoride crystal
12/08/2005US20050269565 Semi-insulating bulk zinc oxide single crystal
12/08/2005US20050269055 Method and apparatus for production of a cast component
12/08/2005US20050268998 Melting, solidifying; laser guidance
12/08/2005US20050268841 Radiation detector
12/07/2005EP1602751A1 Method for preparing borate-based crystal and laser oscillation apparatus
12/01/2005WO2005113436A1 Cooled lump from molten silicon and process for producing the same
12/01/2005US20050266662 Method of growing semiconductor nanowires with uniform cross-sectional area using chemical vapor deposition
12/01/2005US20050263064 Dehydroxylation and purification of calcium fluoride materials using a halogen containing plasma
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