Patents for C30B 11 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. bridgman- stockbarger method (5,247)
12/2008
12/03/2008CN201158723Y Flame-proof heat preserving cover of high temperature furnace
11/2008
11/27/2008US20080292535 small refractive index differences and few small angle grain boundaries have a bi-directional scattering distribution function value (BSDF) of less than 1.5*10-6 or 5*10-7.
11/26/2008CN101311370A Large-sized bismuth zinc borate nonlinear optical crystal, preparation method and use
11/26/2008CN101311356A Low-electric-conductivity and gray track resistant Rb:KTP crystal and method for preparing same
11/26/2008CN101311354A Process for controlling color of crystal
11/26/2008CN101311343A Vacuum furnace suitable for preparing large-diameter high-purity polysilicon ingot
11/26/2008CN101311333A High temperature crystal growth device
11/26/2008CN101311332A Crystal region temperature gradient regulator and single crystal growth device by falling crucible method
11/26/2008CN100436660C Scintillation substances (variants)
11/26/2008CN100436659C Blue-jewel-crystal multi-crucible melt growth technolgoy
11/25/2008US7456084 Method of using a setter having a recess in manufacturing a net-shape semiconductor wafer
11/25/2008US7455740 Method for producing a three-dimensional moulded body
11/20/2008US20080283968 Group III-Nitride Semiconductor Crystal and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device
11/20/2008US20080282969 Crystal growth method, crystal growth apparatus, group-iii nitride crystal and group-iii nitride semiconductor device
11/20/2008US20080282968 Method of Growing Single Crystals from Melt
11/20/2008US20080282967 Crystal Growth Method and Apparatus
11/19/2008CN201151753Y Graphite heat conducting block
11/19/2008CN101307501A Method for manufacturing low etch pit density (EPD) semi-insulating gallium arsenide wafer and the gallium arsenide wafer
11/19/2008CN101307500A Indium phosphide crystal with dopant and process for producing the same
11/19/2008CN101307496A Gadolinium illinium scandium gallium garnet crystal GYSGG and its smelt method crystal growth method
11/13/2008US20080280427 Low etch pit density (EPD) semi-insulating GaAs wafers
11/12/2008EP1990434A1 Moderate density, low density, and extremely low density single crystal alloys for high AN2 applications
11/12/2008EP1535309B1 Radiation detector
11/11/2008US7449064 Method for producing AlN single crystal and AlN single crystal
11/06/2008WO2008133606A1 Apparatus for the production of silicon from melt with indication of melt spill and melt-spill alarm system
11/06/2008WO2008132323A2 Device and method for producing self-sustained plates of silicon or other crystalline materials
11/06/2008WO2008131794A1 Device and process for producing poly-crystalline or multi-crystalline silicon; ingo as well as wafer of poly-crystalline or multi-crystalline...
11/06/2008US20080271666 Method and Apparatus for Preparing Crystal
11/05/2008CN100430530C Seed crystal method of solidifying orientation origination end and application thereof
11/04/2008US7445674 Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
10/2008
10/30/2008US20080264330 Production of nanostructure by curie point induction heating
10/29/2008EP1498518B1 Method for the production of silicon carbide single crystal
10/29/2008CN100429333C Crucible for a device used for the production of a block of crystalline material, and production method
10/28/2008US7442355 Indium phosphide substrate and indium phosphide monocrystal and method of manufacturing thereof
10/28/2008US7442255 Crucible for a device for producing a block of crystalline material and method for producing same
10/23/2008WO2008078043A3 Method and equipment for producing blocks of a semiconducting material
10/22/2008CN201136910Y Seed crystal fixed device for crystal growth
10/15/2008EP1979512A1 Crucible for the treatment of molten silicon
10/15/2008CN100425743C Process for growing gallium nitride single crystal utilizing new flux molten-salt growth method
10/14/2008US7435295 Method for producing compound single crystal and production apparatus for use therein
10/14/2008CA2326056C Direct synthesis process of indium phosphide
10/09/2008WO2008014449A3 Seed holder for crystal growth reactors
10/09/2008WO2008014446A3 Sintered metal components for crystal growth reactors
10/08/2008CN101280459A Growing method of lanthanum aluminate crystal
10/08/2008CN101280456A Growing method by Ti3O5 by bridgman method
10/07/2008US7432522 Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them
10/02/2008WO2008092587A3 Synthetic crystal and method for the production thereof
10/02/2008WO2008014434A3 Crystal growth method and reactor design
10/01/2008EP1974077A2 Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
10/01/2008EP1974076A2 Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics
10/01/2008CN101278078A Crucible for crystallizing silicon and producing mtheod thereof
10/01/2008CN101275281A Method for growth and anneal of zincum-cadmium-tellurium single-crystal, special copple for anneal
10/01/2008CN101275272A Improved temperature gradient method for BaY2F8 monocrystal growing and device therefor
10/01/2008CN100422393C Temperature gradient method rotary multiple crucible crystal growth system
09/2008
09/25/2008US20080229999 Method Of Manufacturing A Calcium Fluoride Single Crystal
09/25/2008DE10313037B4 Verfahren zur Herstellung einer Wasserstoffspeicherlegierung A process for producing a hydrogen storage alloy
09/25/2008DE10234250B4 Vorrichtung sowie Verfahren zur Überwachung der Kristallisation von Silizium An apparatus and method for monitoring the crystallization of silicon
09/17/2008EP1969163A1 Device and process for producing a block of crystalline material
09/17/2008EP1968890A1 Method for the production of silicon suitable for solar purposes
09/17/2008CN201116314Y Polysilicon directional solidification down-drawing crystal growth barycenter driving transmission mechanism
09/16/2008CA2483108C Drop tube type granular crystal producing device
09/10/2008EP1966847A2 Methods for oriented growth of nanowires on patterned substrates
09/10/2008EP1342075B1 Device contaning nanosensors for detecting an analyte and its method of manufacture
09/10/2008CN101260562A Spontaneous nucleation growth method for thallium bromide single-crystal
09/09/2008US7422631 Mould parts of silicon nitride and method for producing such mould parts
09/08/2008CA2623719A1 Method for producing grain refined magnesium and magnesium-alloys
09/04/2008US20080213163 Melt growth method using BaF2, LiF and MgF2; small amount of MgF2 decreases opaqueness; excellent transmission in the vacuum ultraviolet region of not more than 200 nm.
09/04/2008US20080211040 Semiconductor nanowire and deposited catalyst material; such as glucose level monitors for controlling insulin release
09/03/2008CN101255607A Method for preparing Ni3Al-based single-crystal refractory alloy by employing combination of seed crystal method and screw selecting method
09/03/2008CN101255606A Method for preparing Ni based single-crystal refractory alloy by employing combination of seed crystal method and screw selecting method
09/03/2008CN101255605A Method for preparing Ni3Al based single-crystal high-temperature alloy by employing seed crystal
09/03/2008CN101255604A Method for preparing Ni based single-crystal high-temperature alloy by employing seed crystal
09/03/2008CN100415950C Birefraction functional material potassium pentavanadate crystal
09/02/2008US7418993 Method and apparatus for production of a cast component
09/02/2008CA2311486C Crystalline amrubicin hydrochloride
08/2008
08/28/2008US20080206123 Silicon feedstock for solar cells
08/28/2008US20080202650 Heat Treatment Method For Monocrystalline or Directionally Solidified Structural Components
08/27/2008EP1740735B1 Heat treatment method for monocrystalline or directionally solidified structural components
08/21/2008WO2008054840A9 Compositions of doped, co-doped and tri-doped semiconductor materials
08/20/2008EP1456866A4 Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control
08/20/2008CN101245490A Flux growth method for CsLiB6O10 crystal
08/19/2008US7413589 Melting and homogenizing a hydrogen storage alloy in a floating zone melting furnace; and gradually cooling at a cooling rate of 5 degrees C./min. or less to solidify and recover the alloy; reduced segregation, precipitates, or inclusions
08/14/2008WO2008095594A1 Crucible and method of filling a crucible for melting a non-ferrous product
08/14/2008US20080190356 Method and apparatus for producing single crystalline diamonds
08/13/2008EP1954856A1 Crucible for the crystallization of silicon and process for making the same
08/07/2008WO2008092587A2 Synthetic crystal and method for the production thereof
08/07/2008US20080188064 Nanostructures and methods for manufacturing the same
08/07/2008DE102007006731A1 Zinc oxide single crystals production involves heating zinc oxide containing crucible from outside by inductively operated heat source and defined cooling of zinc oxide melt in crucible by generating temperature gradients
08/07/2008DE102007005118A1 Synthetischer Kristall und Verfahren zu dessen Herstellung Synthetic crystal and method of producing the
08/06/2008EP1953801A1 Radiation detector
08/06/2008CN101235546A Micro-reaction device and method for synthesizing cadmium selenide nano-crystal by using temperature gradient
08/06/2008CN101235545A Cesium tungstate scintillation crystal and its preparation method and application
08/06/2008CN101235535A Crystal growing method and device
08/06/2008CN100408731C Method and apparatus of using molten lead iodide to grow monocrystal
08/05/2008US7407547 Liquid-phase growth apparatus and method
07/2008
07/30/2008EP1948563A2 Unseeded silicon carbide single crystals
07/30/2008CN101230488A Method for manufacturing indium phosphide monocrystal
07/30/2008CN101230484A Growing method for carbon-doped sapphire crystal
07/30/2008CN100407364C 硅结晶设备及硅结晶方法 Crystalline silicon and silicon crystallization equipment
07/30/2008CN100406160C Method for producing magnetically active shape memory metal alloy
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