Patents for C30B 11 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. bridgman- stockbarger method (5,247) |
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12/03/2008 | CN201158723Y Flame-proof heat preserving cover of high temperature furnace |
11/27/2008 | US20080292535 small refractive index differences and few small angle grain boundaries have a bi-directional scattering distribution function value (BSDF) of less than 1.5*10-6 or 5*10-7. |
11/26/2008 | CN101311370A Large-sized bismuth zinc borate nonlinear optical crystal, preparation method and use |
11/26/2008 | CN101311356A Low-electric-conductivity and gray track resistant Rb:KTP crystal and method for preparing same |
11/26/2008 | CN101311354A Process for controlling color of crystal |
11/26/2008 | CN101311343A Vacuum furnace suitable for preparing large-diameter high-purity polysilicon ingot |
11/26/2008 | CN101311333A High temperature crystal growth device |
11/26/2008 | CN101311332A Crystal region temperature gradient regulator and single crystal growth device by falling crucible method |
11/26/2008 | CN100436660C Scintillation substances (variants) |
11/26/2008 | CN100436659C Blue-jewel-crystal multi-crucible melt growth technolgoy |
11/25/2008 | US7456084 Method of using a setter having a recess in manufacturing a net-shape semiconductor wafer |
11/25/2008 | US7455740 Method for producing a three-dimensional moulded body |
11/20/2008 | US20080283968 Group III-Nitride Semiconductor Crystal and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device |
11/20/2008 | US20080282969 Crystal growth method, crystal growth apparatus, group-iii nitride crystal and group-iii nitride semiconductor device |
11/20/2008 | US20080282968 Method of Growing Single Crystals from Melt |
11/20/2008 | US20080282967 Crystal Growth Method and Apparatus |
11/19/2008 | CN201151753Y Graphite heat conducting block |
11/19/2008 | CN101307501A Method for manufacturing low etch pit density (EPD) semi-insulating gallium arsenide wafer and the gallium arsenide wafer |
11/19/2008 | CN101307500A Indium phosphide crystal with dopant and process for producing the same |
11/19/2008 | CN101307496A Gadolinium illinium scandium gallium garnet crystal GYSGG and its smelt method crystal growth method |
11/13/2008 | US20080280427 Low etch pit density (EPD) semi-insulating GaAs wafers |
11/12/2008 | EP1990434A1 Moderate density, low density, and extremely low density single crystal alloys for high AN2 applications |
11/12/2008 | EP1535309B1 Radiation detector |
11/11/2008 | US7449064 Method for producing AlN single crystal and AlN single crystal |
11/06/2008 | WO2008133606A1 Apparatus for the production of silicon from melt with indication of melt spill and melt-spill alarm system |
11/06/2008 | WO2008132323A2 Device and method for producing self-sustained plates of silicon or other crystalline materials |
11/06/2008 | WO2008131794A1 Device and process for producing poly-crystalline or multi-crystalline silicon; ingo as well as wafer of poly-crystalline or multi-crystalline... |
11/06/2008 | US20080271666 Method and Apparatus for Preparing Crystal |
11/05/2008 | CN100430530C Seed crystal method of solidifying orientation origination end and application thereof |
11/04/2008 | US7445674 Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus |
10/30/2008 | US20080264330 Production of nanostructure by curie point induction heating |
10/29/2008 | EP1498518B1 Method for the production of silicon carbide single crystal |
10/29/2008 | CN100429333C Crucible for a device used for the production of a block of crystalline material, and production method |
10/28/2008 | US7442355 Indium phosphide substrate and indium phosphide monocrystal and method of manufacturing thereof |
10/28/2008 | US7442255 Crucible for a device for producing a block of crystalline material and method for producing same |
10/23/2008 | WO2008078043A3 Method and equipment for producing blocks of a semiconducting material |
10/22/2008 | CN201136910Y Seed crystal fixed device for crystal growth |
10/15/2008 | EP1979512A1 Crucible for the treatment of molten silicon |
10/15/2008 | CN100425743C Process for growing gallium nitride single crystal utilizing new flux molten-salt growth method |
10/14/2008 | US7435295 Method for producing compound single crystal and production apparatus for use therein |
10/14/2008 | CA2326056C Direct synthesis process of indium phosphide |
10/09/2008 | WO2008014449A3 Seed holder for crystal growth reactors |
10/09/2008 | WO2008014446A3 Sintered metal components for crystal growth reactors |
10/08/2008 | CN101280459A Growing method of lanthanum aluminate crystal |
10/08/2008 | CN101280456A Growing method by Ti3O5 by bridgman method |
10/07/2008 | US7432522 Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them |
10/02/2008 | WO2008092587A3 Synthetic crystal and method for the production thereof |
10/02/2008 | WO2008014434A3 Crystal growth method and reactor design |
10/01/2008 | EP1974077A2 Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics |
10/01/2008 | EP1974076A2 Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics |
10/01/2008 | CN101278078A Crucible for crystallizing silicon and producing mtheod thereof |
10/01/2008 | CN101275281A Method for growth and anneal of zincum-cadmium-tellurium single-crystal, special copple for anneal |
10/01/2008 | CN101275272A Improved temperature gradient method for BaY2F8 monocrystal growing and device therefor |
10/01/2008 | CN100422393C Temperature gradient method rotary multiple crucible crystal growth system |
09/25/2008 | US20080229999 Method Of Manufacturing A Calcium Fluoride Single Crystal |
09/25/2008 | DE10313037B4 Verfahren zur Herstellung einer Wasserstoffspeicherlegierung A process for producing a hydrogen storage alloy |
09/25/2008 | DE10234250B4 Vorrichtung sowie Verfahren zur Überwachung der Kristallisation von Silizium An apparatus and method for monitoring the crystallization of silicon |
09/17/2008 | EP1969163A1 Device and process for producing a block of crystalline material |
09/17/2008 | EP1968890A1 Method for the production of silicon suitable for solar purposes |
09/17/2008 | CN201116314Y Polysilicon directional solidification down-drawing crystal growth barycenter driving transmission mechanism |
09/16/2008 | CA2483108C Drop tube type granular crystal producing device |
09/10/2008 | EP1966847A2 Methods for oriented growth of nanowires on patterned substrates |
09/10/2008 | EP1342075B1 Device contaning nanosensors for detecting an analyte and its method of manufacture |
09/10/2008 | CN101260562A Spontaneous nucleation growth method for thallium bromide single-crystal |
09/09/2008 | US7422631 Mould parts of silicon nitride and method for producing such mould parts |
09/08/2008 | CA2623719A1 Method for producing grain refined magnesium and magnesium-alloys |
09/04/2008 | US20080213163 Melt growth method using BaF2, LiF and MgF2; small amount of MgF2 decreases opaqueness; excellent transmission in the vacuum ultraviolet region of not more than 200 nm. |
09/04/2008 | US20080211040 Semiconductor nanowire and deposited catalyst material; such as glucose level monitors for controlling insulin release |
09/03/2008 | CN101255607A Method for preparing Ni3Al-based single-crystal refractory alloy by employing combination of seed crystal method and screw selecting method |
09/03/2008 | CN101255606A Method for preparing Ni based single-crystal refractory alloy by employing combination of seed crystal method and screw selecting method |
09/03/2008 | CN101255605A Method for preparing Ni3Al based single-crystal high-temperature alloy by employing seed crystal |
09/03/2008 | CN101255604A Method for preparing Ni based single-crystal high-temperature alloy by employing seed crystal |
09/03/2008 | CN100415950C Birefraction functional material potassium pentavanadate crystal |
09/02/2008 | US7418993 Method and apparatus for production of a cast component |
09/02/2008 | CA2311486C Crystalline amrubicin hydrochloride |
08/28/2008 | US20080206123 Silicon feedstock for solar cells |
08/28/2008 | US20080202650 Heat Treatment Method For Monocrystalline or Directionally Solidified Structural Components |
08/27/2008 | EP1740735B1 Heat treatment method for monocrystalline or directionally solidified structural components |
08/21/2008 | WO2008054840A9 Compositions of doped, co-doped and tri-doped semiconductor materials |
08/20/2008 | EP1456866A4 Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control |
08/20/2008 | CN101245490A Flux growth method for CsLiB6O10 crystal |
08/19/2008 | US7413589 Melting and homogenizing a hydrogen storage alloy in a floating zone melting furnace; and gradually cooling at a cooling rate of 5 degrees C./min. or less to solidify and recover the alloy; reduced segregation, precipitates, or inclusions |
08/14/2008 | WO2008095594A1 Crucible and method of filling a crucible for melting a non-ferrous product |
08/14/2008 | US20080190356 Method and apparatus for producing single crystalline diamonds |
08/13/2008 | EP1954856A1 Crucible for the crystallization of silicon and process for making the same |
08/07/2008 | WO2008092587A2 Synthetic crystal and method for the production thereof |
08/07/2008 | US20080188064 Nanostructures and methods for manufacturing the same |
08/07/2008 | DE102007006731A1 Zinc oxide single crystals production involves heating zinc oxide containing crucible from outside by inductively operated heat source and defined cooling of zinc oxide melt in crucible by generating temperature gradients |
08/07/2008 | DE102007005118A1 Synthetischer Kristall und Verfahren zu dessen Herstellung Synthetic crystal and method of producing the |
08/06/2008 | EP1953801A1 Radiation detector |
08/06/2008 | CN101235546A Micro-reaction device and method for synthesizing cadmium selenide nano-crystal by using temperature gradient |
08/06/2008 | CN101235545A Cesium tungstate scintillation crystal and its preparation method and application |
08/06/2008 | CN101235535A Crystal growing method and device |
08/06/2008 | CN100408731C Method and apparatus of using molten lead iodide to grow monocrystal |
08/05/2008 | US7407547 Liquid-phase growth apparatus and method |
07/30/2008 | EP1948563A2 Unseeded silicon carbide single crystals |
07/30/2008 | CN101230488A Method for manufacturing indium phosphide monocrystal |
07/30/2008 | CN101230484A Growing method for carbon-doped sapphire crystal |
07/30/2008 | CN100407364C 硅结晶设备及硅结晶方法 Crystalline silicon and silicon crystallization equipment |
07/30/2008 | CN100406160C Method for producing magnetically active shape memory metal alloy |